STP52P3LLH6
P-channel -
30 V, 0.01 Ω typ., -52 A, STripFET™ H6 Power
MOSFET in TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
Order codes V
DSS
R
DS(on) max
STP52P3LLH6 -30 V
0.012 Ω
Very low on-resistance
Very low gate charge
High avalanche
Low gate drive power loss
I
D
P
TOT
-52 A 70 W
Applications
Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all packages.
G(1)
Features
Order codes
STP52P3LLH6
S(3)
AM11258v1
Table 1: Device summary
Marking Package
52P3LLH6 TO-220
October 2015 DocID027236 Rev 2
This is information on a product in full production.
Packaging
Tube
1/13 www.st.com
Contents
Contents
STP52P3LLH6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
TO-220 package information ........................................................... 10
5 Revision history ............................................................................ 12
2/13 DocID027236 Rev 2
STP52P3LLH6
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Storage temperature
Max. operating junction temperature
Notes:
(1)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Electrical ratings
Value
-30
±20
-52
-37.5
-208
70
-55 to 175
175
Unit
V
V
A
A
A
W
°C
°C
Value
2.14
62.5
Unit
°C/W
°C/W
DocID027236 Rev 2 3/13
Electrical characteristics
2 Electrical characteristics
STP52P3LLH6
(T
CASE
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: Static
Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown Voltage I
D
= -250 µA, V
GS
= 0
V
I
I
DSS
GSS
GS(th)
Zero gate voltage drain current
Gate body leakage current
Gate threshold voltage
-30
V
GS
= 0, V
DS
= -30 V
V
GS
= 0, V
DS
= -30 V,
Tc = 125 °C
V
GS
= ± 20 V, V
DS
= 0
V
DS
= V
GS
, I
D
= -250 µA -1
R
DS(on)
Static drain-source on-resistance
V
GS
= -10 V, I
D
= -26 A
V
GS
= -4.5 V, I
D
= -26 A
Symbol Parameter
Table 5: Dynamic
Test conditions
V
-1 µA
-10 µA
±100 nA
-2.5 V
0.01 0.012
Ω
0.014 0.017
Ω
Min Typ. Max. Unit
C iss
C oss
C rss
Q g
Q gs
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
V
DS
= -25 V, f = 1 MHz,
V
GS
= 0
-
-
- 3350
- 414
- 287
33
14
-
-
-
-
- pF pF pF nC nC
Q gd
R g
Gate-drain charge
Gate input resistance
V
DD
= -15 V, I
D
= -52 A
V
GS
= -4.5 V
(see Figure 14: "Gate charge test circuit" )
I
D
= 0 Gate bias = 0 Test signal level = 20 mV; f = 1MHz
- 11
- 1.5
-
- nC
Ω
Symbol
Table 6: Switching on/off (inductive load)
Parameter Test conditions Min. Typ. Max. Unit t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
V
DD
= -24 V, I
D
= -15 A,
R
G
= 4.7 Ω, V
GS
= -10 V
( see Figure 13: "Switching times test circuit for resistive load" )
-
-
-
-
12.8
112
61
45
-
-
-
- ns ns ns ns
4/13 DocID027236 Rev 2
STP52P3LLH6
Symbol Parameter
V
SD
(1)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
RRM
Table 7: Source drain diode
Test conditions
Reverse recovery current
I
SD
= -52 A, V
GS
= 0
I
SD
= -52 A, di/dt = 100 A/µs,
V
DD
= -24 V
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
25.2
17.4
-1.4
-1.1 V ns nC
A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID027236 Rev 2 5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
I D
(A)
Figure 2: Safe operating area
GIPG251120141355MT
STP52P3LLH6
Figure 3: Thermal impedance
δ
100
10
Op er at io n
Li m ite d in
th is ar ea
is
DS
(o n) by
m ax
R
1
0.1
0.1
1
Tj=175°C
Tc=25°C
Single pulse
10 V DS (V)
100µs
1ms
10ms
100ms
0.02
0.01
0.05
0.2
0.1
I D (A)
Figure 4: Output characteristics
GIPG280820141409MT
V GS = 9,10V 8V
7V
200
6V
150
5V
Figure 5: Transfer characteristics
100
4V
50
3V
0
0 2 4 6 8 V DS (V)
Figure 6: Gate charge vs gate-source voltage
GIPG290820141127MT
V GS
(V)
12
V DD =15V
I G =52 A
10
8
6
4
2
0
0 20 40 60 Q g (nC)
Figure 7: Static drain-source on-resistance
GIPG290820141143MT
R DS(on)
(m Ω)
11.50
V GS =10V
11.00
10.50
10.00
9.50
9.00
8.50
8.00
0 2 4 6 8 10 I D (A)
6/13 DocID027236 Rev 2
STP52P3LLH6
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
GIPG290820141351MT
V
GS(th)
(norm)
1.1
I D =250µ A
1
0.9
0.8
0.7
0.6
0.5
0.4
-75 -25 25 75 125 175 T J (°C)
Figure 10: Normalized on-resistance vs temperature
GIPG290820141400MT
R DS(on)
(norm)
V GS =10V
1.6
1.4
1.2
1
0.8
0.6
0.4
-75 -25 25 75 125 175 T J (°C)
Figure 11: Normalized V(BR)DSS vs temperature
GIPG290820141412MT
V (BR)DSS
(norm)
1.08
I D =1m A
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
-75 -25 25 75 125 175 T J (°C)
Figure 12: Source-drain diode forward characteristics
For the P-channel Power MOSFET, current and voltage polarities are reversed.
DocID027236 Rev 2 7/13
Test circuits
3 Test circuits
Figure 13: Switching times test circuit for resistive load
STP52P3LLH6
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching and diode recovery times
8/13 DocID027236 Rev 2
STP52P3LLH6
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID027236 Rev 2 9/13
Package information
4.1 TO-220 package information
Figure 16: TO-220 type A package outline
STP52P3LLH6
10/13 DocID027236 Rev 2
STP52P3LLH6
Dim. e1
F
H1
J1
L
L1
L20
D
D1
E e
A b b1 c
L30
øP
Q
Table 8: TO-220 type A mechanical data mm
Min. Typ.
4.40
0.61
1.14
0.48
15.25
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
16.40
28.90
3.75
2.65
Package information
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
DocID027236 Rev 2 11/13
Revision history
5
STP52P3LLH6
Revision history
Date Revision
Table 9: Document revision history
Changes
24-Nov-2014
12-Oct-2015
1
2
First release.
Document status promoted from preliminary to production data.
Minor text changes.
12/13 DocID027236 Rev 2
STP52P3LLH6
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DocID027236 Rev 2 13/13
