STB28NM50N, STF28NM50N
STP28NM50N, STW28NM50N
N-channel 500 V, 0.135 Ω , 21 A D²PAK, TO-220, TO-220FP, TO-247
MDmesh™ II Power MOSFET
Features
Order codes
V
DSS
(@Tjmax)
R
DS(on) max.
I
D
STB28NM50N
STF28NM50N
STP28NM50N
STW28NM50N
550 V < 0.158 Ω 21 A
■
■
■
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
1
2
3
TO-220FP
1
D²PAK
3
TO-220
1
2
3
1
2
3
TO-247
Figure 1.
Internal schematic diagram
'
$
3
!-V
Table 1.
Device summary
Order codes
STB28NM50N
STF28NM50N
STP28NM50N
STW28NM50N
Marking
28NM50N
Package
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
June 2011 Doc ID 17432 Rev 2 1/21 www.st.com
21
5
6
3
4
1
2
Contents
Contents
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21 Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol Parameter
TO-220 D²PAK TO-247 TO-220FP
V
DS
V
GS
Drain-source voltage (V
Gate- source voltage
GS
= 0) 500
± 25
I
D
I
DM
(2)
P
TOT
V
I
D
ISO
Drain current (continuous) at
T
C
= 25 °C
Drain current (continuous) at
T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;T
C
=25 °C)
Peak diode recovery voltage slope
21
13
84
150 dv/dt
(3)
15
T stg
T j
Storage temperature
Max. operating junction temperature
- 55 to 150
1.
Limited only by maximum temperature allowed
2.
Pulse width limited by safe operating area
3.
I
SD
≤
21 A, di/dt
≤
400 A/µs, V
DS
peak
≤
V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
150
21
13
84
(1)
(1)
(1)
35
2500
Unit
V
V
A
A
A
W
V
V/ns
°C
°C
Table 3.
Thermal data
Value
Symbol Parameter
R
R thj-case thj-amb
R thj-pcb
(1)
T l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering purpose
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
TO-220 D²PAK TO-247 TO-220FP
0.83
3.6
62.5
300
30
50
300
62.5
Unit
°C/W
°C/W
°C/W
°C
Table 4.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj = 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Doc ID 17432 Rev 2
Value
7.5
300
Unit
A mJ
3/21
Electrical characteristics STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
(T
CASE
=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
I
I
DSS
GSS
GS(th)
Zero gate voltage drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
R
DS(on)
Static drain-source on resistance
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= max rating
V
DS
= max rating, @125 °C
V
GS
= ± 25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 10.5 A
Min.
Typ.
Max.
Unit
500 V
1
100
µA
µA
100 nA
2 3 4 V
0.135 0.158
Ω
Table 6.
Symbol
Dynamic
Parameter Test conditions Min.
Typ.
Max. Unit
C
C
C oss
C oss(eq)
(1)
Equivalent output capacitance time related
Q g
Q gs
Q gd
R iss rss g
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
V
V
V
DS
GS
GS
= 25 V, f = 1 MHz,
= 0
= 0, V
DS
= 0 to 50 V
V
DD
= 400 V, I
D
= 21 A,
V
GS
= 10 V,
(see Figure 19
) f=1 MHz Gate DC Bias=0
Test signal level=20 mV open drain
-
-
-
-
1735
122
4.3
418
50
9.5
25
2.7
-
-
-
-
1.
C oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C oss increases from 0 to 80% V
DSS
.
when V
DS pF pF pF pF nC nC nC
Ω
4/21 Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Table 7.
Symbol t d(on) t r t d(off) t f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics
Test conditions
V
DD
= 250 V, I
D
= 10.5 A
R
G
= 4.7 Ω V
GS
= 10 V
(see
Figure 18
)
Min.
Typ.
Max. Unit
-
13.6
19
62
52
ns ns ns ns
Table 8.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
I
SD
= 21 A, V
GS
= 0
= 21 A, di/dt = 100 A/µs
V
DD
= 400 V
(see Figure 23
)
I
SD
= 21 A, di/dt = 100 A/µs
V
DD
= 400 V, T j
= 150 °C
(see Figure 23
)
1.
Pulse width limited by safe operating area
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min.
Typ. Max.
Unit
-
-
21
84
1.5
-
-
326
5
30
376
6.2
33.2
ns
µC
A ns
µC
A
A
A
V
Doc ID 17432 Rev 2 5/21
Electrical characteristics STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
2.1 Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK
!-V
Figure 3.
Thermal impedance for TO-220,
D²PAK
) $
!
X2
$3ON
YMA
ATIONINTHISAREAIS
/PER
,IMITEDB
4J #
4C #
3INGLE
PULSE
S
S
MS
MS
6
$3
6
Figure 4.
Safe operating area for TO-220FP Figure 5.
Thermal impedance for TO-220FP
!-V
) $
!
X2
$3ON
YMA
ATIONINTHISAREAIS
/PER
,IMITEDB
4J #
4C #
3INGLE
PULSE
S
S
MS
MS
6 $3 6
Figure 6.
Safe operating area for TO-247
!-V
Figure 7.
Thermal impedance for TO-247
) $
! /PER
,IMITEDB
X2
$3ON
4J #
4C #
3INGLE
PULSE
S
S
MS
MS
6/21
6 $3 6
Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Electrical characteristics
Figure 8.
Output characteristics
) $
!
6
'3
6
6
!-V
Figure 9.
Transfer characteristics
) $
!
6 $3 6
!-V
6
6 $3 6 6 '3 6
Figure 10.
Gate charge vs gate-source voltage Figure 11.
Static drain-source on resistance
!-V !-V
6 '3
6 6
$3
6 $$ 6
6 '3
2 $3ON
/HM
6 '3 6
)
$
!
Figure 12.
Capacitance variations
#
P&
1
G
N# ) $ !
!-V
Figure 13.
Output capacitance stored energy
!-V
% OSS
*
#ISS
#OSS
#RSS
6 $3 6 6 $3 6
Doc ID 17432 Rev 2 7/21
Electrical characteristics STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Figure 14.
Normalized gate threshold voltage vs temperature
!-V
6 '3TH
NORM
)
$
!
Figure 15.
Normalized on resistance vs temperature
!-V
2 $3ON
NORM
)
$
!
6 '3 6
4 * # 4 * #
Figure 16.
Normalized B
VDSS
vs temperature Figure 17.
Source-drain diode forward characteristics
!-V
"6 $33
NORM
)
$
M!
V
S D
(V)
T
J
=-50°C
1.2
AM09090v1
T
J
=25°C
1.0
0.
8 T
J
=150°C
0.6
4 * #
0.4
0.2
0
0 5 10 15 20 I
S D
(A)
8/21 Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
3 Test circuits
Test circuits
Figure 18.
Switching times test circuit for resistive load
Figure 19.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
µ
F
3 .
3
µ
F
V
DD
V i
=20V=V
GMAX
2200
µ F
I
G
=CON S T
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 20.
Test circuit for inductive load switching and diode recovery times
Figure 21.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 µ H
3 .
3
µ F
1000
µ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
µ F
3 .
3
µ F
V
DD
P w
AM01470v1
Figure 22.
Unclamped inductive waveform Figure 23.
Switching time waveform
V
D
V
(BR)D SS t on td on t r t off td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
Doc ID 17432 Rev 2 9/21
Package mechanical data
4
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/21 Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Table 9.
TO-220FP mechanical data
Dim.
L5
L6
L7
Dia
G1
H
L2
L3
L4
F
F1
F2
G
D
E
A
B
28.6
9.8
2.9
15.9
9
3
Figure 24.
TO-220FP drawing
Min.
0.75
1.15
1.15
4.95
4.4
2.5
2.5
0.45
2.4
10
L7
A
B
Di a
L6 mm
Typ.
L5
16
D
F1 F2
Package mechanical data
E
Max.
1
1.70
1.70
5.2
4.6
2.7
2.75
0.7
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
H
F
G1
G
L4
L2
L 3
Doc ID 17432 Rev 2
7012510_Rev_K
11/21
Package mechanical data STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
E
E1 e e1
H
J1 c c2
D
D1
A
A1 b b2
L
L1
L2
R
V2
Table 10.
D²PAK (TO-263) mechanical data
Dim.
Min.
0.45
1.23
8.95
7.50
4.40
0.03
0.70
1.14
10
8.50
4.88
15
2.49
2.29
1.27
1.30
0° mm
Typ.
2.54
0.4
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
12/21 Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Figure 25.
D²PAK footprint
(a)
16.90
Package mechanical data
12.20
9.75
Figure 26.
D²PAK (TO-263) drawing
3 .50
1.60
5.0
8
Footprint a.
All dimension are in millimeters
Doc ID 17432 Rev 2
0079457_ S
13/21
Package mechanical data STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
D
D1
E e
A b b1 c e1
F
H1
J1
L
Table 11.
TO-220 type A mechanical data
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
L1
L20
L30
∅
P
Q
6.20
2.40
13
3.50
10
2.40
4.95
1.23
3.75
2.65
mm
Typ.
1.27
16.40
28.90
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
14/21 Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Figure 27.
TO-220 type A drawing
Package mechanical data
00159 88 _typeA_Rev_ S
Doc ID 17432 Rev 2 15/21
Package mechanical data STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N b2 c
D
E
A
A1 b b1 e
L
L1
L2
∅ P
∅
R
S
Table 12.
TO-247 mechanical data
Dim.
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
14.20
3.70
3.55
4.50
mm
Typ.
5.45
18.50
5.50
14.80
4.30
3.65
5.50
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
16/21 Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Figure 28.
TO-247 drawing
Package mechanical data
0075 3 25_F
Doc ID 17432 Rev 2 17/21
Packaging mechanical data
5
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Packaging mechanical data
D1
E
F
K0
P0
A0
B0
D
P1
P2
R
T
W
Table 13.
D²PAK (TO-263) tape and reel mechanical data
Tape mm
Dim.
Dim.
Min.
10.5
15.7
1.5
1.59
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
0.35
24.3
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
24.4
100
Base qty
Bulk qty
Reel mm
Max.
330
13.2
26.4
30.4
1000
1000
18/21 Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Figure 29.
Tape
T
Top cover t a pe
10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm
P0 D P2
Packaging mechanical data
K0
F
E
W
B0
A0 P1
U s er direction of feed
D1
R
Figure 30.
Reel
REEL DIMEN S ION S
A
U s er direction of feed
Bending r a di us
AM0 88 52v2
T
D
B
40mm min.
Acce ss hole
At s l ot loc a tion
C
N
F u ll r a di us
Doc ID 17432 Rev 2
T a pe s lot in core for t a pe s t a rt 25 mm min.
width
G me asu red a t h ub
AM0 88 51v2
19/21
Revision history STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Table 14.
Document revision history
Date Revision
19-Jul-2010
27-Jun-2011
1
2
Changes
First release.
– Updated
Table 6: Dynamic
.
– Updated
Section 2.1: Electrical characteristics (curves) .
20/21 Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
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Doc ID 17432 Rev 2 21/21
