STGW30NC120HD
N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT
Features
Type V
CES
STGW30NC120HD 1200V
V
CE(sat)
@25°C
< 2.75V
■
■
■
■
■
■
Low on-losses
Low on-voltage drop (V cesat
)
High current capability
High input impedance (voltage driven)
Low gate charge
Ideal for soft switching application
I
C
@100°C
30A
Application
■ Induction heating
Description
Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop.
TO-247
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
STGW30NC120HD
Marking
GW30NC120HD
Package
TO-247
Packaging
Tube
October 2007 Rev 9 1/13 www.st.com
13
3
4
5
1
2
Contents
Contents
STGW30NC120HD
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
CES
I
C
(1)
I
C
(1)
I
CL
(2)
V
GE
P
TOT
I f
T j
Collector-emitter voltage (V
Collector current (continuous) at 25°C
Collector current (continuous) at 100°C
Collector current (pulsed)
Gate-emitter voltage
Total dissipation at T
C
GS
= 25°C
= 0)
Diode RMS forward current at T
C
Operating junction temperature
1.
Calculated according to the iterative formula:
= 25°C
I
C
( T
C
) =
R
THJ – C
×
T
JMAX
– T
V
CESAT MAX ) ( T
C
, I
C
)
2.
Vclamp=80% of BVces, Tj=150°C, R
G
=10
Ω
, V
GE
=15V
Table 3.
Symbol
Thermal resistance
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-ambient (diode)
Rthj-amb Thermal resistance junction-ambient (IGBT)
Value
1200
60
30
135
±25
220
30
–55 to 150
A
A
V
W
A
°C
Unit
V
A
Value
0.57
1.6
30
Unit
°C/W
°C/W
°C/W
3/13
Electrical characteristics STGW30NC120HD
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
Static
Parameter Test conditions Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-emitter breakdown voltage
I
C
= 1mA, V
GE
= 0
V
CE(SAT)
Collector-emitter saturation voltage
V
GE
= 15V, I
C
= 20A, Tj= 25°C
V
GE
= 15V, I
C
= 20A, Tj=125°C
V
GE(th)
I
CES
Gate threshold voltage
Collector-emitter leakage current (V
GE
= 0)
V
CE
= V
GE
, I
C
= 250µA
V
CE
=Max rating,Tc=25°C
V
CE
=Max rating, Tc=125°C
I
GES
Gate-emitter leakage current (V
CE
= 0)
V
GE
=± 20V, V
CE
= 0 g fs
Forward transconductance V
CE
= 25V
,
I
C
= 20A
1200
3.75
2.2
2.0
14
2.75
5.75
500
10
± 100
V
V
V
V
µA mA nA
S
Table 5.
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
I
Test conditions
V
CE
= 25V, f = 1 MHz, V
GE
=0
Min.
Typ.
Max.
Unit
2510
175
30 pF pF pF
V
C
CE
= 960V,
= 20A,V
GE
=15V
110
16
49 nC nC nC
4/13
Table 6.
Symbol
Switching on/off (inductive load)
Parameter Test conditions t d(on) t r
(di/dt) on t d(on) t r
(di/dt) on t r
(V off
) t d
( off
) t f t r
(V off
) t d
( off
) t f
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 960V, I
C
= 20A
R
G
= 10 Ω , V
GE
= 15V,
Tj=25°C (see Figure 17)
V
CC
= 960V, I
C
= 20A
R
G
= 10
Ω
, V
GE
= 15V,
Tj= 125°C (see Figure 17)
V
CC
= 960V, I
C
= 20A
R
G
= 10
Ω
, V
GE
= 15V,
Tj= 25°C (see Figure 17)
V
CC
= 960V, I
C
= 20A
R
G
= 10
Ω
, V
GE
= 15V,
Tj= 125°C (see Figure 17)
Min.
Typ.
Max.
Unit
29
11
1820 ns ns
A/µs
27
14
1580
90
275
312
150
336
592 ns ns ns ns ns
A/µs ns ns ns
Table 7.
Symbol
Switching energy (inductive load)
Parameter Test conditions Min.
Typ.
Max.
Unit
Eon
(1)
E off
(2)
E ts
Eon
(1)
E off
(2)
E ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
R
G
= 960V, I
C
= 10 Ω , V
GE
= 15V,
Tj= 25°C
V
CC
R
G
(see Figure 17)
= 960V, I
C
= 10 Ω , V
GE
= 15V,
Tj= 125°C
= 20A
= 20A
(see Figure 17)
1660
4438
6098
3015
6900
9915
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
µJ
µJ
µJ
µJ
µJ
µJ
Table 8.
Symbol
V f t rr
Q rr
I rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
If = 20A, Tj = 25°C
If = 20A, Tj = 125°C
If = 20A, V
R
= 27V,
T j
= 125°C, di/dt = 100A/µs
(see Figure 20)
Min.
Typ.
Max.
Unit
1.9
1.7
2.5
V
V
152
722
9 ns nC
A
5/13
Electrical characteristics STGW30NC120HD
Figure 2.
Output characteristics Figure 3.
Transfer characteristics
Figure 4.
Transconductance Figure 5.
Collector-emitter on voltage vs. temperature
Figure 6.
Gate charge vs. gate-source voltage
Figure 7.
Capacitance variations
6/13
Figure 8.
Normalized gate threshold voltage vs. temperature
Figure 9.
Collector-emitter on voltage vs. collector current
Figure 10. Normalized breakdown voltage vs. temperature
Figure 11. Switching losses vs. temperature
Figure 12. Switching losses vs. gate resistance
Figure 13. Switching losses vs. collector current
7/13
Electrical characteristics
Figure 14. Thermal Impedance Figure 15. Turn-off SOA
STGW30NC120HD
Figure 16. Emitter-collector diode characteristics
8/13
3 Test circuit
Figure 17. Test circuit for inductive load switching
Figure 18. Gate charge test circuit
Figure 19. Switching waveform Figure 20. Diode recovery time waveform
9/13
Package mechanical data
4 Package mechanical data
STGW30NC120HD
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
STGW30NC120HD Package mechanical data
DIM.
e
L
L1
L2 b2 c
D
E
øP
øR
S
A
A1 b b1
MIN.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
14.20
3.70
3.55
4.50
TO-247 MECHANICAL DATA mm.
TYP
5.45
18.50
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
14.80
4.30
3.65
5.50
MIN.
0.19
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.14
0.140
0.177
5.50
inch
TYP.
0.214
0.728
0.216
MAX.
0.20
0.102
0.055
0.094
0.134
0.03
0.793
0.620
0.582
0.17
0.143
0.216
11/13
Revision history STGW30NC120HD
Table 9.
Date
Document revision history
23-Nov-2005
17-Mar-2006
05-May-2006
30-May-2006
23-Jun-2006
07-Sep-2006
14-Nov-2006
26-Jan-2007
04-Oct-2007
Revision
1
2
3
4
5
6
7
8
9
Changes
First issue.
Complete version
Modified value on
Table 2.: Absolute maximum ratings
New values on
Table 3: Thermal resistance
Modified value on
Table 4.: Static
Modified T
J temperature range to 150 ° C in
Table 2.: Absolute maximum ratings
Modified
Figure 5.
and
Figure 9.
Typing error on first page.
Modified test conditions in
Table 4.: Static
12/13
STGW30NC120HD
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