STB10N65K3, STF10N65K3,
STFI10N65K3, STP10N65K3
N-channel 650 V, 0.75
Ω
typ., 10 A SuperMESH3™ Power MOSFETs
in D
2
PAK, TO-220FP, I
2
PAKFP and TO-220 packages
Datasheet
-
production data
TAB
D
2
PAK
1
3
I
2
PAKFP (TO-281)
TAB
TO-220FP
1
2
3
TO-220
1
2
3
Figure 1. Internal schematic diagram
'7$%
Features
Order codes
STB10N65K3
STF10N65K3
STFI10N65K3
STP10N65K3
V
DS
650 V
R
DS(on) max I
D
1
Ω
P
TOT
150 W
10 A 35 W
•
100% avalanche tested
•
Extremely low on-resistance R
DS(on)
•
Gate charge minimized
•
Very low intrinsic capacitances
•
Improved diode reverse recovery characteristics
•
Zener-protected
150 W
*
6
AM01476v1
Applications
• Switching applications
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to
STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Order codes
STB10N65K3
STF10N65K3
STFI10N65K3
STP10N65K3
Table 1. Device summary
Marking Package
D
2
PAK
10N65K3
TO-220FP
I
2
PAKFP (TO-281)
TO-220
Packaging
Tape and reel
Tube
August 2013
This is information on a product in full production.
DocID15732 Rev 4 1/21 www.st.com
5
6
3
4
1
2
Contents
Contents
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21 DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
I
E
AR
AS
Total dissipation at T
C
= 25 °C
Max current during repetitive or single pulse avalanche (pulse width limited by T
JMAX
)
Single pulse avalanche energy
(2)
Derating factor dv/dt
(3)
Peak diode recovery voltage slope
ESD
V
ISO
Gate-source human body model
(R = 1.5 k Ω , C = 100 pF)
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; T
C
=25 °C)
Operating junction temperature T j
T stg
Storage temperature
1.
Pulse width limited by safe operating area.
2.
Starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V
3.
I
SD
≤
10 A, di/dt = 100 A/µs, V
Peak
< V
(BR)DSS
Value
TO-220FP
I
2
PAKFP
650
± 30
10
6.3
40
D
2
PAK,
TO-220
35 150
Unit
V
V
A
A
A
W
0.28
2500
7.2
212
12
2.8
-55 to 150
1.2
A mJ
W/°C
V/ns kV
V
°C
°C
Symbol
Table 3. Thermal data
Parameter
R thj-case
R thj-amb
R thj-pcb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Value
D
2
PAK
TO-220FP
I
2
PAKFP
TO-220
0.83
3.57
62.5
0.83
30
Unit
°C/W
°C/W
°C/W
DocID15732 Rev 4 3/21
21
Electrical characteristics STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
4/21
(Tcase = 25 °C unless otherwise specified)
Symbol Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Table 4. On /off states
I
D
Test conditions
= 1 mA, V
GS
= 0
Zero gate voltage drain current (V
GS
= 0)
V
DS
= 650 V
V
DS
= 650 V, T
C
=125 °C
Gate-body leakage current (V
DS
= 0)
V
GS
= ± 20 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 100 µA
Static drain-source on- resistance
V
GS
= 10 V, I
D
= 3.6 A
Min.
Typ.
Max.
Unit
650
3
0.75
1
50
±10 µA
V
µA
µA
4.5
1
V
Ω
Symbol
C iss
C oss
C rss
C oss eq.
R
Q
Q
Q
G g gs gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
V
DS
= 0 to 520 V, V
GS
= 0 f=1 MHz, I
V
DD
V
GS
D
= 10 V
(see
=0
= 520 V, I
D
Figure 18
)
= 7.2 A,
-
-
-
-
-
Min.
Typ.
Max.
Unit
-
1180
125
-
pF pF
14 pF
77
3
42
7.4
23
-
-
-
-
pF
Ω nC nC nC
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 310 V, I
D
= 3.5 A,
R
G
= 4.7
Ω, V
GS
= 10 V
(see
Figure 17 )
Min.
Typ.
Max Unit
-
-
-
-
14.5
14
44
35 -
-
-
ns ns ns ns
DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Electrical characteristics
Symbol Parameter
Table 7. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
I
SD
= 7 A, V
GS
= 0
Q rr
I
RRM t
Q rr rr
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
I
SD
V
I
RRM
Reverse recovery current
1.
Pulse width limited by safe operating area.
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
= 7 A, di/dt = 100A/µs
DD
= 60 V (see
Figure 22
I
SD
= 7 A, di/dt = 100 A/µs
V
DD
= 60 V, T j
= 150 °C
(see Figure 22 )
)
Min.
Typ.
Max. Unit
-
-
-
-
-
-
-
-
320
2
13
410
2.9
14
7.2
A
28.8
A
1.5
V ns
µC
A ns
µC
A
Symbol
Table 8. Gate-source Zener diode
Parameter Test conditions
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ± 1mA, I
D
=0
Min Typ.
Max.
Unit
30 V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
DocID15732 Rev 4 5/21
21
Electrical characteristics STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for D
2
PAK and
TO-220
AM15460v1
I
D
(A)
Figure 3. Thermal impedance for D
2
PAK and
TO-220
1µs
10
10µs
10µs
1ms
1
DS(on) y max R ation in this area is
Oper
Limited b
10
Tj=150°C
Tc=25°C
Sinlge pulse
10ms
100 V
DS
(V)
0.1
0.1
1
Figure 4. Safe operating area for TO-220FP and
I
2
PAKFP
AM03922v1
I
D
(A)
Figure 5. Thermal impedance for TO-220FP and
I
2
PAKFP
10
1
0.1
0.01
0.1
Oper
Limited b
1
10µs
DS(on)
10
Tj=150°C
Tc=25°C
Sinlge pulse
100 V
DS
(V)
100µs
1ms
10ms
10
8
6
I
D
(A)
18
16
Figure 6. Output characteristics
AM03923v1
7V
14
V
GS
=10V
12
6V
4
2
0
0 10 20
5V
V
DS
(V)
6/21 DocID15732 Rev 4
Figure 7. Transfer characteristics
AM03924v1
I
D
(A)
12
11
10
9
8
7
6
5
4
3
2
1
0
1 2
V
DS =
15 V
3 4 5 6 7 8 9 V
GS
(V)
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Electrical characteristics
Figure 8. Normalized BV
DSS
vs temperature
AM03925v1
BV
DSS
(norm)
Figure 9. Static drain-source on resistance
R
DS(on)
(
Ω
)
0.95
AM03926v1
1.10
V
GS
= 10 V
0.90
I
D
= 1 mA
1.05
0.85
0.80
1.00
0.75
0.95
0.90
-75 -50 -25 0 25 50 75 100 125 150 T
J
(°C)
0.70
0.65
0.60
0 1 2 3 4 5 6 7 I
D
(A)
Figure 10. Output capacitance stored energy
AM03929v1
E oss
(µJ)
Figure 11. Capacitance variations
AM03928v1
C
(pF)
V
GS
(V)
12
10
8
6
4
2
0
0
5
4
3
2
1
0
0
8
7
6
100 200 300 400 500 600 V
DS
(V)
Figure 12. Gate charge vs gate-source voltage
V
DD
=520V
I
D
=7A
1000
100
10
Ciss
Coss
Crss
AM03927v1
V
DS
(V)
500
400
1
0.1
1 10 100 V
DS
(V)
Figure 13. Normalized on-resistance vs temperature
AM03931v1
R
DS(on)
(norm)
2.5
I
D
= 1.2 A
2.0
10 20 30
300
200
100
40 50
0
Q g
(nC)
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150 T
J
(°C)
DocID15732 Rev 4 7/21
21
Electrical characteristics STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Figure 14. Normalized gate threshold voltage vs temperature
AM03930v1
V
GS(th)
(norm)
1.10
I
D
= 100 µA
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 125 150 T
J
(°C)
Figure 15. Maximum avalanche energy vs temperature
AM03933v1
E
AS
(mJ)
220
200
180
160
140
120
100
80
60
40
20
0
0 20 40
I
D
=7.2 A
V
DD
=50 V
60 80 100 120 140 T
J
(°C)
Figure 16. Source-drain diode forward characteristics
AM03932v1
V
SD
(V)
T
J
=-50°C
0.9
0.8
T
J
=25°C
0.7
0.6
T
J
=150°C
0.5
0.4
0.3
0 1 2 3 4 5 6 7 8 I
SD
(A)
8/21 DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
3 Test circuits
Test circuits
Figure 17. Switching times test circuit for resistive load
Figure 18. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CONST
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 19. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 20. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ F
1000
μ F
V
DD
V i
AM01470v1
Figure 21. Unclamped inductive waveform
V
(BR)DSS
V
D
V
D
I
D
L
2200
μ F
3.3
μ F
V
DD
D.U.T.
P w
AM01471v1
Figure 22. Switching time waveform t on td on t r t off td off t f
I
DM
90%
90%
10%
I
D 0
10% V
DS
V
DD
V
DD
90%
V
GS
AM01472v1
0
10%
AM01473v1
DocID15732 Rev 4 9/21
21
Package mechanical data
4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
10/21 DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Dim.
e e1
H
J1
L
L1
L2
R
V2 c c2
D
D1
E
E1
A
A1 b b2
Package mechanical data
4.88
15
2.49
2.29
1.27
1.30
Table 9. D²PAK (TO-263) mechanical data mm
Typ.
Min.
0.45
1.23
8.95
7.50
10
8.50
4.40
0.03
0.70
1.14
2.54
0.4
0°
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
DocID15732 Rev 4 11/21
21
Package mechanical data STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Figure 23. D²PAK (TO-263) drawing
0079457_T
Figure 24. D²PAK footprint
(a)
16.90
12.20
12/21 a.
All dimension are in millimeters
9.75
DocID15732 Rev 4
3.50
1.60
5.08
Footprint
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Dim.
F
F1
F2
G
G1
H
A
B
D
E
L5
L6
L7
Dia
L2
L3
L4
Package mechanical data
28.6
9.8
2.9
15.9
9
3
Table 10. TO-220FP mechanical data mm
Typ.
Min.
0.75
1.15
1.15
4.95
2.4
10
4.4
2.5
2.5
0.45
16
Max.
1
1.70
1.70
5.2
2.7
10.4
4.6
2.7
2.75
0.7
30.6
10.6
3.6
16.4
9.3
3.2
DocID15732 Rev 4 13/21
21
Package mechanical data STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Figure 25. TO-220FP drawing
14/21 DocID15732 Rev 4
7012510_Rev_K_B
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Dim.
E
F
F1
G
H
L1
A
B
D
D1
L2
L3
L4
L5
L6
Package mechanical data
Table 11. I
2
PAKFP (TO-281) mechanical data mm
Typ.
Min.
4.40
2.50
2.50
0.65
0.45
0.75
4.95
10.00
21.00
13.20
10.55
2.70
0.85
7.30
-
Figure 26. I
2
PAKFP (TO-281) drawing
Max.
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.50
DocID15732 Rev 4
UHY$
15/21
21
Package mechanical data
Dim.
D
D1
E e e1
F
H1
J1
L
A b b1 c
L1
L20
L30
∅
P
Q
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Table 12. TO-220 type A mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
16.40
28.90
3.75
2.65
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
16/21 DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Figure 27. TO-220 type A drawing
Package mechanical data
DocID15732 Rev 4
BW\SH$B5HYB7
17/21
21
Packaging mechanical data
5
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Packaging mechanical data
Dim.
A0
B0
D
D1
E
F
K0
P0
P1
P2
R
T
W
Min.
10.5
15.7
1.5
1.59
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape Reel mm mm
Dim.
Max.
11.6
5.0
4.1
12.1
2.1
10.7
15.9
1.6
1.61
1.85
0.35
24.3
C
D
G
A
B
N
T
Min.
1.5
12.8
20.2
24.4
100
Base qty
Bulk qty
Max.
330
13.2
26.4
30.4
1000
1000
18/21 DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
T
Top cover tape
Figure 28. Tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
Packaging mechanical data
K0
F
E
W
B1
B0
For machine ref. only including draft and radii concentric around B0
A0 P1
User direction of feed
D1
R
A
REEL DIMENSIONS
D
User direction of feed
B
Figure 29. Reel
40mm min.
Access hole
At slot location
C
Bending radius
AM08852v1
T
N
Full radius
DocID15732 Rev 4
Tape slot in core for tape start 25 mm min.
width
G measured at hub
AM08851v2
19/21
21
Revision history STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Date
30-Jun-2009
14-Nov-2011
14-Nov-2012
05-Aug-2013
Revision
Table 14. Document revision history
Changes
1
2
3
4
First release
Updated mechanical data and Section 2.1: Electrical characteristics
(curves) .
Minor text changes.
– Added: I
2
PAKFP and TO-220
– Deleted: T
I
row
– Added: R
DS(on)
typical value, Figure 2 and 3
– Modified: Figure 2
– Updated:
Section 4: Package mechanical data
– Added: D
2
PAK package
– Added: R thj-pcb
in
Table 3
– Updated: figure Figure 17
,
18 , 19 and 20
– Updated:
Section 4: Package mechanical data and
Section 5:
Packaging mechanical data
– Minor text changes
20/21 DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
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