STB24N65M2, STF24N65M2,
STP24N65M2
Nchannel 650 V, 0.185 Ω typ., 16 A MDmesh M2
Power MOSFET in D2PAK, TO-220FP and TO-220 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order codes V
DS
R
DS(on)
max I
D
STB24N65M2
STF24N65M2 650 V 0.23 Ω 16 A
STP24N65M2
Extremely low gate charge
Excellent output capacitance (C oss
) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Table 1: Device summary
Order codes Marking Package Packaging
Tape and reel
STB24N65M2
STF24N65M2
STP24N65M2
24N65M2
D 2 PAK
TO-220FP
TO-220
Tube
November 2014 DocID026475 Rev 2
This is information on a product in full production.
1/20 www.st.com
Contents
Contents
STB24N65M2, STF24N65M2, STP24N65M2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package mechanical data ............................................................. 10
4.1
4.2
4.3
D2PAK package information ........................................................... 10
TO-220FP package information ...................................................... 13
TO-220 type A package information ................................................ 15
5 Packaging mechanical data .......................................................... 17
6 Revision history ............................................................................ 19
2/20 DocID026475 Rev 2
STB24N65M2, STF24N65M2, STP24N65M2
1 Electrical ratings
Symbol
Electrical ratings
Table 2: Absolute maximum ratings
Parameter
D 2 PAK
TO-220
Value
TO-220FP
V
GS
I
D
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
I
D
Drain current (continuous) at T
C
= 100 °C
I
DM
(2)
Drain current (pulsed)
P
TOT
Total dissipation at T
C
= 25 °C
dv/dt (3)
Peak diode recovery voltage slope
dv/dt (4)
MOSFET dv/dt ruggedness
V
T
ISO stg
T j
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; T
C
= 25 °C)
Storage temperature
Max. operating junction temperature
16
10
64
150
± 25
15
50
- 55 to 150
16 (1)
10 (1)
64 (1)
30
2500
Unit
Notes:
(1)
Limited by maximum junction temperature.
(2)
Pulse width limited by safe operating area.
(3)
I
SD
≤ 16 A, di/dt ≤ 400 A/µs; V
DS(peak)
< V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
(4)
V
DS
≤ 520 V
Table 3: Thermal data
Symbol Parameter
Value
D 2 PAK TO-220 TO-220FP
Unit
R thj-case
Thermal resistance junction-case max
R thj-pcb
Thermal resistance junction-pcb max (1)
R thj-amb
Thermal resistance junction-ambient max
30
0.83
Notes:
(1)
When mounted on 1 inch² FR-4, 2 Oz copper board.
Symbol
Table 4: Avalanche characteristics
Parameter
I
AR
E
AS
62.5
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax
)
Single pulse avalanche energy (starting T j
=25°C, I
D
= I
AR
; V
DD
=50V)
4.2 °C/W
°C/W
°C/W
Value Unit
2.2 A
650 mJ
V
A
A
A
W
V/ns
V/ns
V
°C
DocID026475 Rev 2 3/20
Electrical characteristics
2 Electrical characteristics
STB24N65M2, STF24N65M2, STP24N65M2
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5: On /off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage I
D
= 1 mA, V
GS
= 0
I
DSS
Zero gate voltage drain current (V
GS
= 0)
V
DS
= 650 V
V
DS
= 650 V, T
C
=125 °C
I
GSS
Gate-body leakage current (V
DS
= 0)
V
GS
= ± 25 V
V
DS
= V
GS
, I
D
= 250 µA V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source on-resistance
V
GS
= 10 V, I
D
= 8 A
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
Input capacitance
C oss
Output capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
C rss
Reverse transfer capacitance
C
oss eq.
(1)
Equivalent output capacitance V
DS
= 0 to 520 V, V
GS
= 0
R
G
Q g
Intrinsic gate resistance
Total gate charge f = 1 MHz, I
D
= 0
Q gs
Q gd
Gate-source charge
Gate-drain charge
V
DD
= 520 V, I
D
= 16 A,
V
GS
= 10 V
-
-
-
-
-
-
Min. Typ. Max. Unit
650
1
V
µA
100 µA
2 3
±10 µA
4 V
0.185 0.23
Ω
Min. Typ. Max. Unit
- 1060
- 47.5
-
- pF pF
1.65
229
7
29
3.8
14
-
-
-
-
-
- pF pF
Ω nC nC nC
Notes:
(1)
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to 80% V
DSS
Symbol Parameter
Table 7: Switching times
Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 325 V, I
D
= 8 A,
R
G
=
4.7 Ω, V
GS
= 10 V
-
-
-
-
10
9.5
68
25.5
-
-
-
- ns ns ns ns
4/20 DocID026475 Rev 2
STB24N65M2, STF24N65M2, STP24N65M2
Table 8: Source drain diode
Symbol Parameter Test conditions
I
SD
Source-drain current
I
SDM
(1)
Source-drain current (pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
RRM t rr
Q rr
I
RRM
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 16 A, V
GS
= 0
I
SD
= 16 A, di/dt = 100 A/µs
V
DD
= 60 V
I
SD
= 16 A, di/dt = 100 A/µs
V
DD
= 60 V, T j
= 150 °C
Electrical characteristics
-
-
-
-
-
-
-
-
-
Min. Typ. Max. Unit
16
64
1.6
350
4.5
26
496
6.5
25.5
A
A
V ns
µC
A ns
µC
A
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID026475 Rev 2 5/20
Electrical characteristics
2.1
STB24N65M2, STF24N65M2, STP24N65M2
Electrical characteristics (curves)
Figure 2: Safe operating area for D2PAK and
TO-220
Figure 3: Thermal impedance for D2PAK and
TO-220
Figure 4: Safe operating area for TO-220FP Figure 5: Thermal impedance for TO-220FP
6/20
20
15
10
5
0
0
I D
(A)
Figure 6: Output characteristics
GIPD180920141533FSR
V GS = 7, 8, 9, 10 V
35
6V
30
5V
25
4
4V
8 12 16 20 24 28 V DS (V)
30
25
20
15
10
5
0
0
I D
(A)
Figure 7: Transfer characteristics
GIPD180920141600FSR
V DS = 20 V
35
2 4 6 8 V
GS
(V)
DocID026475 Rev 2
STB24N65M2, STF24N65M2, STP24N65M2
Figure 8: Gate charge vs gate-source voltage
V GS
(V)
12
GIPD041020141607FSR
V DS (V)
600
V
DS
V DD = 520 V
I D = 16 A
10
500
8
6
4
2
0
0
400
300
200
5 10 15 20 25
100
30
0
Q g (nC)
Figure 9: Static drain-source on-resistance
GIPD180920141613FSR
R DS(on)
(Ω)
V
GS
= 10V
0.196
0.193
0.190
0.187
0.184
0.181
0.178
0.175
0 4
Electrical characteristics
8 12 16 I D (A)
C
(pF)
Figure 10: Capacitance variations
GIPD041020141619FSR
Figure 11: Normalized gate threshold voltage vs temperature
1000
Ciss
100
Coss
10
1
0.1
0.1
f= 1 MHz
1 10 100
Crss
V DS (V)
Figure 13: Normalized V(BR)DSS vs temperature
Figure 12: Normalized on-resistance
GIPD180920141459FSR
R DS(on)
(norm)
2.2
V GS = 10V
1.8
1.4
1
0.6
0.2
-75 -25 25 75 125 T j (°C)
DocID026475 Rev 2 7/20
Electrical characteristics
Figure 14: Source-drain diode forward characteristics
GIPD041020141624FSR
V SD
(V)
1.1
T j = -50°C
STB24N65M2, STF24N65M2, STP24N65M2
Figure 15: Output capacitance stored energy
GIPD041020141629FSR
E
(µJ)
8
1
6
0.9
T j = 25°C
0.8
4
0.7
0.6
0.5
0 4 8
T j = 150°C
12 16 I SD (A)
2
0
0 100 200 300 400 500 600 V
DS
(V)
8/20 DocID026475 Rev 2
STB24N65M2, STF24N65M2, STP24N65M2
3 Test circuits
Figure 16: Switching times test circuit for resistive load
Test circuits
Figure 17: Gate charge test circuit
Figure 18: Test circuit for inductive load switching and diode recovery times
Figure 19: Unclamped inductive load test circuit
Figure 20: Unclamped inductive waveform Figure 21: Switching time waveform
DocID026475 Rev 2 9/20
Package mechanical data
4
4.1
Package mechanical data
STB24N65M2, STF24N65M2, STP24N65M2
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
D2PAK package information
Figure 22: D²PAK (TO-263) drawing
10/20 DocID026475 Rev 2
STB24N65M2, STF24N65M2, STP24N65M2 Package mechanical
Table 9: D²PAK (TO-263) mechanical data
data mm
Dim.
Min. Typ. Max.
E1
E2 e e1
D
D1
D2
E
A
A1 b b2 c c2
H
J1
L
L1
L2
R
V2
4.88
15
2.49
2.29
1.27
1.30
8.95
7.50
1.10
10
8.50
6.85
4.40
0.03
0.70
1.14
0.45
1.23
0°
8.70
7.05
2.54
0.4
7.75
1.30
5.28
15.85
2.69
2.79
1.40
1.75
9.35
8.00
1.50
10.40
8.90
7.25
4.60
0.23
0.93
1.70
0.60
1.36
8°
DocID026475 Rev 2 11/20
Package mechanical data STB24N65M2, STF24N65M2, STP24N65M2
Figure 23: D²PAK footprint
All the dimensions are in millimeters.
12/20 DocID026475 Rev 2
STB24N65M2, STF24N65M2, STP24N65M2
4.2 TO-220FP package information
Figure 24: TO-220FP package outline
Package mechanical data
DocID026475 Rev 2 13/20
Package mechanical data
Dim.
L2
L3
L4
L5
F2
G
G1
H
A
B
D
E
F
F1
L6
L7
Dia
STB24N65M2, STF24N65M2, STP24N65M2
Table 10: TO-220FP mechanical data mm
Typ. Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
28.6
9.8
2.9
15.9
9
3
30.6
10.6
3.6
16.4
9.3
3.2
14/20 DocID026475 Rev 2
STB24N65M2, STF24N65M2, STP24N65M2
4.3 TO-220 type A package information
Package mechanical data
Figure 25: TO-220 type A package outline
DocID026475 Rev 2 15/20
Package mechanical data
Dim.
D1
E e e1
F
H1
J1
A b b1 c
D
L
L1
L20
L30
øP
Q
STB24N65M2, STF24N65M2, STP24N65M2
Table 11: TO-220 type A mechanical data mm
Typ. Min.
4.40
0.61
1.14
0.48
15.25
Max.
4.60
0.88
1.70
0.70
15.75
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
16.40
28.90
3.75
2.65
3.85
2.95
16/20 DocID026475 Rev 2
STB24N65M2, STF24N65M2, STP24N65M2
5 Packaging mechanical data
Figure 26: Tape
Packaging mechanical data
DocID026475 Rev 2 17/20
Packaging mechanical data
A
D
B
STB24N65M2, STF24N65M2, STP24N65M2
Figure 27: Reel
T
40mm min.
Access hole
At slot location
C
N
Full radius
Tape slot
In core for
Tape start
2.5mm min.width
G measured
At hub
AM06038v1
Table 12: D²PAK (TO-263) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
1.65
11.4
4.8
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
0.35
24.3
A
B
C
D
G
N
T
Base qty
Bulk qty
Min.
1.5
12.8
20.2
24.4
100 mm
Max.
330
13.2
26.4
30.4
1000
1000
Dim.
P0
P1
P2
R
T
W
A0
B0
D
D1
E
F
K0
18/20 DocID026475 Rev 2
STB24N65M2, STF24N65M2, STP24N65M2
6 Revision history
Date
09-Jun-2014
11-Nov-2014
Revision
1
2
Table 13: Document revision history
Changes
Revision history
First release.
Document status promoted from preliminary to production data.
DocID026475 Rev 2 19/20
STB24N65M2, STF24N65M2, STP24N65M2
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20/20 DocID026475 Rev 2
