STMicroelectronics STP10N95K5 Datasheet
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STB10N95K5, STF10N95K5,
STP10N95K5, STW10N95K5
N-channel 950 V, 0.65
Ω
typ., 8 A Zener-protected SuperMESH™ 5
Power MOSFETs in D
2
PAK, TO-220FP, TO-220 and TO-247
Datasheet
-
production data
TAB
TAB
TO-220
1
2
3
Figure 1. Internal schematic diagram
'7$%
*
1
3
6
1
2
3
TO-220FP
TO-247
1
2
3
AM01476v1
Features
Order codes V
DS
STB10N95K5
STF10N95K5
950 V
STP10N95K5
STW10N95K5
R
DS(on)
max I
D
0.8
Ω
8 A
P
TOT
130 W
30 W
130 W
•
•
•
•
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
•
Applications
Switching applications
Description
These N-channel Zener-protected Power
MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage
SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.
Order codes
STB10N95K5
STF10N95K5
STP10N95K5
STW10N95K5
Table 1. Device summary
Marking Package
D
2
PAK
10N95K5
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
January 2014
This is information on a product in full production.
DocID024850 Rev 3 1/22 www.st.com
Contents
Contents
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/22 DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Value
Parameter
TO-220FP
D
2
PAK,
TO-220, TO-247
Unit
±30 V
I
I
GS
D
I
D
I
DM
(2)
P
TOT
AR
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Max current during repetitive or single pulse avalanche
E
AS dv/dt
(3) dv/dt
(4)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t=1 s; T
C
=25 °C)
Operating junction temperature
Storage temperature
T j
T stg
1.
Limited by maximum junction temperature.
2.
Pulse width limited by safe operating area.
3.
I
SD
≤
8 A, di/dt
≤
100 A/ μ s, V
DS(peak)
≤
V
(BR)DSS.
4.
V
SD
≤
760 V
8
(1)
5
(1)
30
2500
32
2.5
122
4.5
50
- 55 to 150
8
5
130
V
A
A
A
W
A mJ
V/ns
V/ns
V
°C
Symbol
Table 3. Thermal data
Parameter
Value
TO-220FP D
2
PAK
R thj-case
Thermal resistance junction-case max
R thj-amb
Rt hj-pcb
(1)
Thermal resistance junction-amb max
Thermal resistance junction-pcb max
1.
When mounted on 1 inch² FR-4, 2 Oz copper board
4.2
62.5
30
0.96
TO-220,
TO-247
Unit
62.5
°C/W
°C/W
°C/W
DocID024850 Rev 3 3/22
22
Electrical characteristics STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
(Tcase =25 °C unless otherwise specified)
Symbol Parameter
Table 4. On /off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0
V
I
I
DSS
GSS
GS(th)
R
DS(on)
V
DS
= 950 V
Zero gate voltage, V
GS
= 0 drain current
V
DS
= 950 V, T
C
=125 °C
Gate-body leakage current
V
GS
= ± 20 V; V
DS
=0
V
DS
= V
GS
, I
D
= 100 μ A Gate threshold voltage
Static drain-source on- resistance
V
GS
= 10 V, I
D
= 4 A
Min.
Typ.
Max.
Unit
950 V
1
50
μ A
μ A
±10 μ A
3 4 5
0.65
0.8
V
Ω
Symbol Parameter
Table 5. Dynamic
Test conditions Min.
Typ.
Max.
Unit
C iss
C oss
Input capacitance 630 pF
C rss
Output capacitance
Reverse transfer capacitance
V
DS
=100 V, f=1 MHz, V
GS
=0
-
50
0.6
-
pF pF
C o(tr)
(1)
C o(er)
(2)
Equivalent capacitance time related
V
GS
= 0, V
DS
= 0 to 760 V
Equivalent capacitance energy related
-
77
28 -
pF pF
R
G
Q g
Q gs
Q gd
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge f = 1 MHz open drain
V
DD
V
GS
= 760 V, I
=10 V
D
)
= 8 A
-
-
-
6.5
22
5
15 -
-
-
-
Ω nC nC nC
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as C oss
when
V
DS
increases from 0 to 80% V
DSS
2.
energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V
DS
increases from 0 to 80% V
DSS
4/22 DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Electrical characteristics
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 475 V, I
D
= 4 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
Min.
Typ.
Max Unit
-
-
-
-
22
14
51
15 -
-
-
ns ns ns ns
Symbol Parameter
Table 7. Source drain diode
Test conditions
I
SD
Source-drain current
I
SDM
(1)
V
SD
(2)
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time t rr
Q rr
I
RRM t rr
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Q rr
I
RRM
Reverse recovery charge
Reverse recovery current
I
I
I
SD
SD
V
DD
SD
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 μ s, duty cycle 1.5%
= 8 A, V
GS
= 60 V
= 0
= 8 A, di/dt = 100 A/
= 8 A, di/dt = 100 A/
V
DD
= 60 V T
J
= 150 °C
μ
μ s s
Min.
Typ.
Max Unit
A
8
-
-
-
-
-
-
-
-
404
5.2
25.5
596
6.9
23
32
1.5
μ C
A ns
μ C
A
A
V ns
Symbol
Table 8. Gate-source Zener diode
Parameter Test conditions
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ± 1mA, I
D
=0
Min Typ.
Max.
Unit
30 V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
DocID024850 Rev 3 5/22
22
Electrical characteristics STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for D
2
PAK and
TO-220
Figure 3. Thermal impedance for D
2
PAK and
TO-220
AM16133v1
I
D
(A)
10
1
DS(on)
Operation in this area is
Limited by max R
10 µ s
100
µ s
1ms
10ms
0.1
0.01
0.1
1 10
Tj=150°C
Tc=25°C
Single pulse
100 V
DS
(V)
Figure 4. Safe operating area for TO-220FP
AM16134v1
I
D
(A)
Figure 5. Thermal impedance for TO-220FP
10
1
DS(on)
Operation in this area is
Limited by max R
10
µ s
100
µ s
1ms
10ms
0.1
0.01
0.1
1 10
Tj=150°C
Tc=25°C
Single pulse
100 V
DS
(V)
Figure 6. Safe operating area for TO-247
AM16135v1
I
D
(A)
Figure 7. Thermal impedance for TO-247
10
DS(on)
1
Operation in this area is
Limited by max R
0.1
0.01
0.1
1 10
Tj=150°C
Tc=25°C
Single pulse
100 V
DS
(V)
10
µ s
100 µ s
1ms
10ms
6/22 DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Electrical characteristics
Figure 8. Output characteristics
AM16136v1
I
D
(A)
V
GS
=10, 11V
16 9V
Figure 9. Transfer characteristics
AM16137v1
I
D
(A)
V
DS
=20V
16
12
12
8V
8 8
4
0
0 4 8 12 16
7V
6V
V
DS
(V)
4
0
5 6 7 8 9 10 V
GS
(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
AM16138v1 AM16139v1
V
GS
(V)
10
V
DS
V
DD
=760V
I
D
=8A
V
DS
(V)
R
DS(on)
( Ω )
1.6
V
GS
=10V
600
8
1.2
6 400
0.8
4
200
0.4
2
0
0 5 10 15 20
0
Q g
(nC)
0
2 3 4 5 6 7 I
D
(A)
Figure 12. Capacitance variations
C
(pF)
AM16140v1
Figure 13. Output capacitance stored energy
AM16141v1
E oss
(µJ)
1000
10
Ciss
8
100
6
Coss
10
Crss
4
1
2
0.1
0.1
1 10 100 V
DS
(V)
0
0 200 400 600 800 V
DS
(V)
DocID024850 Rev 3 7/22
22
Electrical characteristics STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Figure 14. Normalized gate threshold voltage vs temperature
AM16142v1
V
GS(th)
(norm)
1.2
I
D
=100µA
1
0.8
0.6
0.4
Figure 15. Normalized on-resistance vs temperature
AM16143v1
R
DS(on)
(norm)
2.5
I
D
=4A
V
GS
=10V
2
1.5
1
0.2
0
-100 -50 0 50 100 150 T
J
(°C)
Figure 16. Normalized V
DS
vs temperature
AM16145v1
V
DS
(norm)
1.1
I
D
=1mA
0.5
0
-100 -50 0 50 100 150 T
J
(°C)
Figure 17. Source-drain diode forward characteristics
AM16144v1
V
SD
(V)
T
J
=-50°C
0.9
T
J
=25°C
1.05
0.8
1
0.7
T
J
=150°C
0.95
0.6
0.9
0.85
-100 -50 0 50 100 150 T
J
(°C)
Figure 18. Maximum avalanche energy vs starting T
J
AM16146v1
E
AS
(mJ)
120
I
D
=2.5 A
V
DD
=50 V
100
80
60
40
20
0
0 25 50 75 100 125 T
J
(°C)
0.5
2 3 4 5 6 7 I
SD
(A)
8/22 DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
3 Test circuits
Test circuits
Figure 19. Switching times test circuit for resistive load
Figure 20. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k
Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ
F
I
G
=CONST
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 21. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 22. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ
F
1000
μ
F
V
DD
V i
AM01470v1
Figure 23. Unclamped inductive waveform
V
(BR)DSS
V
D
V
D
I
D
L
2200
μ
F
3.3
μ
F
V
DD
D.U.T.
P w
AM01471v1
Figure 24. Switching time waveform t on td on t r t off td off t f
I
DM
90%
90%
10%
I
D 0
10% V
DS
V
DD
V
DD
90%
V
GS
AM01472v1
0
10%
AM01473v1
DocID024850 Rev 3 9/22
22
Package mechanical data
4
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
10/22 DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Figure 25. D²PAK (TO-263) drawing
Package mechanical data
Dim.
e e1
H
D
D1
E
E1
A
A1 b b2 c c2
Table 9. D²PAK (TO-263) mechanical data mm
Min.
Typ.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
2.54
4.88
15
5.28
15.85
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
0079457_T
DocID024850 Rev 3 11/22
22
Package mechanical data
Dim.
J1
L
L1
L2
R
V2
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Table 9. D²PAK (TO-263) mechanical data (continued) mm
Min.
Typ.
Max.
2.49
2.29
1.27
1.30
2.69
2.79
1.40
1.75
0.4
0° 8°
Figure 26. D²PAK footprint
(a)
16.90
12.20
9.75
3.50
1.60
5.08
Footprint
12/22 a.
All dimension are in millimeters
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Figure 27. TO-220FP drawing
Package mechanical data
DocID024850 Rev 3
7012510_Rev_K_B
13/22
22
Package mechanical data
Dim.
L4
L5
L6
L7
Dia
G1
H
L2
L3
F
F1
F2
G
A
B
D
E
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
28.6
9.8
2.9
15.9
9
3
Table 10. TO-220FP mechanical data mm
Min.
Typ.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
14/22 DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Figure 28. TO-220 type A drawing
Package mechanical data
DocID024850 Rev 3
BW\SH$B5HYB7
15/22
22
Package mechanical data
Dim.
e1
F
H1
J1
L
L1
D
D1
E e
A b b1 c
L20
L30
∅
P
Q
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Table 11. TO-220 type A mechanical data mm
Min.
Typ.
4.40
0.61
1.14
0.48
15.25
1.27
16.40
28.90
3.75
2.65
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
16/22 DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Figure 29. TO-247 drawing
Package mechanical data
Dim.
b1 b2 c
D
E
A
A1 b
0075325_G
Table 12. TO-247 mechanical data mm.
Min.
Typ.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
DocID024850 Rev 3
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
17/22
22
Package mechanical data
Dim.
e
L
L1
L2
∅
P
∅
R
S
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Table 12. TO-247 mechanical data (continued) mm.
Min.
Typ.
5.30
14.20
3.70
5.45
18.50
3.55
4.50
5.30
5.50
Max.
5.60
14.80
4.30
3.65
5.50
5.70
18/22 DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
5 Packaging mechanical data
T
Top cover tape
Figure 30. Tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
Packaging mechanical data
F
E
W
B1
K0
B0
For machine ref. only including draft and radii concentric around B0
A0 P1
User direction of feed
D1
User direction of feed
R
Bending radius
AM08852v1
DocID024850 Rev 3 19/22
22
Packaging mechanical data
REEL DIMENSIONS
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Figure 31. Reel
T
40mm min.
Access hole
At slot location
B
D
C
A
N
Dim.
P0
P1
P2
R
T
W
D1
E
F
K0
A0
B0
D
Full radius Tape slot in core for tape start 25 mm min.
width
G measured at hub
AM08851v2
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
1.65
11.4
4.8
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape Reel mm mm
Dim.
Min.
Max.
Min.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
D
G
N
T
A
B
C
1.5
12.8
20.2
24.4
100
Base qty
Bulk qty
0.35
24.3
Max.
330
13.2
26.4
30.4
1000
1000
20/22 DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Revision history
Date
24-Jun-2013
07-Oct-2013
29-Jan-2014
Revision
Table 14. Document revision history
Changes
1
2
3
First release.
– Added: D
2
PAK package
– Modified: note
– Added: Thermal resistance junction-pcb max parameter
– Modified: typical values in
Section 2.1: Electrical characteristics (curves)
– Updated:
Section 4: Package mechanical data
– Minor text changes
– Datasheet status promoted from preliminary data to production data
– Minor text changes
DocID024850 Rev 3 21/22
22
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
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22/22 DocID024850 Rev 3
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