STMicroelectronics STP260N6F6 Datasheet
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STI260N6F6
STP260N6F6
N-channel 60 V, 0.0024 Ω , 120 A STripFET™ VI DeepGATE™
Power MOSFET in TO-220 and I²PAK packages
Features
Order codes
STI260N6F6
STP260N6F6
V
DSS
60 V
■
■
■
Low gate charge
Very low on-resistance
High avalanche ruggedness
R
DS(on) max
< 0.003 Ω
I
D
120 A
Application
■ Switching applications
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest R
DS(on)
in all packages.
TAB
I²PAK
1
2
3
$4!"
TAB
TO-220
Figure 1.
Internal schematic diagram
1
2
3
'
3
!-V
Table 1.
Device summary
Order codes
STI260N6F6
STP260N6F6
Marking
260N6F6
Package
I²PAK
TO-220
Packaging
Tube
January 2012 Doc ID 17467 Rev 5 1/14 www.st.com
14
Contents
Contents
STI260N6F6, STP260N6F6
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2/14 Doc ID 17467 Rev 5
STI260N6F6, STP260N6F6 Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Derating factor
T stg
T j
Storage temperature
Operating junction temperature
1.
Current limited by package.
C
= 25 °C
C
= 100 °C
Table 3.
Symbol
Thermal data
Parameter
R thj-case
R thj-a
T l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Value
60
± 20
120
120
480
300
2
- 55 to 175
Unit
A
A
A
V
V
W
W/°C
°C
Value
0.5
62.5
300
Unit
°C/W
°C/W
°C
Doc ID 17467 Rev 5 3/14
Electrical characteristics STI260N6F6, STP260N6F6
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source breakdown voltage (V
GS
= 0)
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage
Drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
Static drain-source on-resistance
Test conditions
I
D
= 250 µA
V
DS
= 60 V
V
DS
= 60 V, T
C
=125 °C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 60 A
Min.
Typ.
Max.
Unit
60
2
2.4
1
100
± 100 nA
V
µA
µA
4
3
V m Ω
Table 5.
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6.
Symbol t d(on) t r t d(off) t f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
V
DD
= 30 V, I
D
= 120 A,
V
GS
= 10 V
Min.
Typ.
Max.
Unit
11400
850
pF pF
368 pF
-
183
53
41
nC nC nC
Test conditions
V
DD
= 30 V, I
D
= 60 A
R
G
= 4.7 Ω V
GS
= 10 V
Min.
Typ.
Max.
Unit
-
-
31.4
165
144.4
62.6
-
ns ns ns ns
4/14 Doc ID 17467 Rev 5
STI260N6F6, STP260N6F6 Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
I t
Q rr rr
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Current limited by package.
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
I
SD
= 120 A, V
GS
= 0
I
SD
= 120 A, V
DD
= 48 V di/dt = 100 A/µs,
T j
= 150 °C
Min.
Typ.
Max Unit
-
-
-
120
480
1.1
A
A
V
-
55.6
116
3.8
ns nC
A
Doc ID 17467 Rev 5 5/14
Electrical characteristics STI260N6F6, STP260N6F6
2.1
10
Electrical characteristics (curves)
Figure 2.
Safe operating area
I
D
(A)
100 a
i s s a re
D
S
(on)
Oper a tion in thi a x R
Limited
AM0906 8 v1
Figure 3.
Thermal impedance
K
Tj=175°C
Tc=25°C
S ingle p u l s e
δ
=0.5
0.2
100 µs
1m s
0.1
0.05
10
-1
0.02
10m s
0.01
2 8 0tok
Zth=k Rthj-c
δ
=tp/
τ
1
S ingle p u l s e tp
τ
0.1
0.1
1 10 V
D S
(V)
10
-2
10
-5
10
-4
10
3
10
-2
10
-1 t p
( s )
Figure 4.
Output characteristics
I
D
(A)
400
V
G S
=10V
3 50
6V
3 00
250
200
150
100
50
0
0 1 2 3
5V
AM09069v1
Figure 5.
Transfer characteristics
I
D (A)
400 V
D S
=2V
3 50
3 00
250
200
150
100
V
D S
(V)
50
0
0 1 2 3 4 5
AM09070v1
V
G S
(V)
Figure 6.
Normalized B
VDSS
vs. temperature Figure 7.
Static drain-source on resistance
AM09071v1 AM09072v1
BV
D SS
(norm)
R
D S (on)
(
Ω
)
4.0
1.1
I
D
=1mA
V
G S
=10V
3 .5
1.0
3 .0
2.5
0.9
0.
8
0.7
0.6
-75 -25 25 75 125 175 T
J
(°C)
2.0
1.5
1.0
0.5
0.0
0 20 40 60 8 0 100 120 I
D
(A)
6/14 Doc ID 17467 Rev 5
STI260N6F6, STP260N6F6 Electrical characteristics
Figure 8.
Gate charge vs. gate-source voltage
AM0907 3 v1
V
G S
(V)
12
V
DD
= 3 0V
I
D
=120A
Figure 9.
Capacitance variations
C
(pF) f=1MHz
10
10000
8
AM09074v1
Ci ss
6
4
2
0
0
1000
Co ss
Cr ss
50 100 150 200 Q g
(nC)
100
0.1
1.0
1 10 V
D S
(V)
Figure 10.
Normalized gate threshold voltage vs. temperature
AM09075v1
V
G S (th)
(norm)
1.2
I
D
=250 µ A
Figure 11.
Normalized on resistance vs. temperature
AM09076v1
R
D S (on)
(norm)
I
D
=60A
V
G S
=10V
2.0
1.0
0.
8
1.5
0.6
0.4
0.2
0.5
0
-75 -25 25 75 125 175 T
J
(°C) -75 -25 25 75 125
Figure 12.
Source-drain diode forward characteristics
V
S D
(V)
T
J
=-55°C
1.0
AM09077v1
0.9
175 T
J
(°C)
T
J
=25°C
0.
8
0.7
0.6
T
J
=150°C
0.5
0.4
0 20 40 60 8 0 100 120 I
S D
(A)
Doc ID 17467 Rev 5 7/14
Test circuits
3 Test circuits
STI260N6F6, STP260N6F6
Figure 13.
Switching times test circuit for resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
μ
F
3 .
3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CON S T
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 15.
Test circuit for inductive load switching and diode recovery times
Figure 16.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 μ H
3 .
3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3 .
3
μ F
V
DD
P w
AM01470v1
Figure 17.
Unclamped inductive waveform Figure 18.
Switching time waveform
V
D
V
(BR)D SS t on td on t r t off td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
8/14 Doc ID 17467 Rev 5
STI260N6F6, STP260N6F6
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 17467 Rev 5 9/14
Package mechanical data
E
L
L1
L2
D e e1
A
A1 b b1 c c2
Table 8.
DIM.
I²PAK (TO-262) mechanical data min.
8.95
2.40
4.95
10
13
3.50
1.27
4.40
2.40
0.61
1.14
0.49
1.23
mm.
typ
Figure 19.
I²PAK (TO-262) drawing
STI260N6F6, STP260N6F6 max.
9.35
2.70
5.15
10.40
14
3.93
1.40
4.60
2.72
0.88
1.70
0.70
1.32
10/14 Doc ID 17467 Rev 5
00049 8 2_Rev_H
STI260N6F6, STP260N6F6
D
D1
E e e1
F
H1
J1
L
A b b1 c
Table 9.
Dim.
TO-220 type A mechanical data
Min.
4.40
0.61
1.14
0.48
15.25
L1
L20
L30
∅
P
Q
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
mm
Typ.
1.27
16.40
28.90
Package mechanical data
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
Doc ID 17467 Rev 5 11/14
Package mechanical data
Figure 20.
TO-220 type A drawing
STI260N6F6, STP260N6F6
12/14 Doc ID 17467 Rev 5
00159 88 _typeA_Rev_ S
STI260N6F6, STP260N6F6 Revision history
07-Nov
Table 10.
Document revision history
Date Revision
07-May-2010
18-Apr-2011
27-Apr-2011
05-Oct-2011
13-Jan-2012
1
2
3
4
5
Changes
First release.
Document status promoted from preliminary data to datasheet.
has been updated.
Table 2: Absolute maximum ratings has been updated.
Minor text changes.
Updated Table 2: Absolute maximum ratings .
Doc ID 17467 Rev 5 13/14
STI260N6F6, STP260N6F6
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14/14 Doc ID 17467 Rev 5
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