STC20DE90HV
Hybrid emitter switched bipolar transistor
ESBT
®
900 V - 20 A - 0.06 W
Preliminary Data
General features
Table 1.
General features
V
CS(ON)
I
C
1.2 V 20 A
R
CS(ON)
0.06 Ω
■
■
■
■
■
Low equivalent on resistance
Very fast-switch, up to 150 kHz
Squared RBSOA, up to 900 V
Very low C
ISS driven by R
G
= 47 Ω
In compliance with the 2002/93/EC European
Directive
Description
The STC20DE90HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology.
The STC20DE90HV is designed for use in power supply forward converter and three-phase power factor corrector applications.
Applications
■
■
SMPS forward converter
Three-phase power factor corrector
1
2
3
4
TO247-4L HV
Internal schematic diagrams
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Order codes
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STC20DE90HV C20DE90HV TO247-4L HV Tube
October 2006 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/11 www.st.com
11
3
4
STC20DE90HV
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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STC20DE90HV
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
CS(SS)
V
BS(OS)
V
SB(OS)
V
GS
I
C
I
CM
I
B
I
BM
P tot
T stg
T
J
Collector-source voltage (V
BS
=V
GS
=0V)
Base-source voltage (I
C
=0, V
GS
=0V)
Source-base voltage (I
C
=0, V
GS
=0V)
Gate-source voltage
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 1ms)
Total dissipation at T c
≤ 25°C
Storage temperature
Max. operating junction temperature
Table 3.
Thermal data
Symbol Parameter
R thj-case
Thermal resistance junction-case max
Electrical ratings
Value
900
30
9
± 20
20
60
5
20
139
-40 to 150
150
Unit
A
A
A
A
V
V
V
V
W
°C
°C
Value
0.9
Unit
°C/W
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Electrical characteristics STC20DE90HV
(T case
= 25°C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol Parameter Test Conditions Min.
Typ. Max. Unit
I
CS(SS)
I
BS(OS)
I
SB(OS)
I
GS(OS)
V
CS(ON) h
FE
V
BS(ON)
Collector-source current
(V
BS
=V
GS
=0V)
V
CS(SS)
=900V
Base-source current
(I
C
=0, V
GS
=0V)
V
BS(OS)
=30V
Source-base current
(I
C
=0, V
GS
=0V)
Gate-source leakage
(V
BS
=0V)
V
SB(OS)
V
GS
=9V
= ± 20V
Collector-source ON voltage
DC current gain
V
GS
=10V I
C
=20A I
B
=4A
V
GS
=10V I
C
=10A I
B
=1A
V
CS
=1V V
GS
=10V I
C
=20A
V
CS
=1V V
GS
=10V I
C
=10A
Base-source ON voltage
V
GS
=10V I
C
=20A I
B
=4A
V
GS
=10V I
C
=10A I
B
=1A
Gate threshold voltage V
BS
=V
GS
I
B
=250 µ A 1.5
1.2
0.65
4
12
1.8
1.2
2.2
100 µ A
10
3
µ A
100 µ A
500 nA
V
GS(th)
C iss
Q
GS(tot) t s t f
Input capacitance
Gate-source Charge
INDUCTIVE LOAD
Storage time
Fall time
V
CS
=25V f =1MHz
V
GS
=V
CB
=0V
V
CS
=25V V
GS
=10V
V
CB
=0V I
C
=20A
V
GS
=10V R
G
=47 Ω
V
Clamp
=720V t p
=4 µ s
I
C
=10A I
B
=2A
750
12.5
775
7 pF nC
INDUCTIVE LOAD
V
GS
=10V R
G
=47 Ω t s
510
Storage time V
Clamp
=720V t
V
CC
=V
Clamp
=400V p
=4 µ s
I
C
=10A I
B
=1A
5 t f Obsolete Product(s) - Obsolete Product(s) ns ns
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CS(dyn)
(500ns)
I
B
= 2A R
G
=47 Ω
2.3
V t peak
=500ns I
Bpeak
=10A ns ns
V
V
V
V
V
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STC20DE90HV Electrical characteristics
Table 4.
Symbol
V
CS(dyn)
V
CSW
Electrical characteristics
Parameter Test Conditions Min.
Typ. Max. Unit
Collector-source dynamic voltage
(1 µ s)
V
CC
=V
Clamp
=400V
V
GS
=10V I
C
=10A
I
B
= 2A R
G
=47 Ω t peak
=500ns I
Bpeak
=10A
Maximum collectorsource voltage switched without snubber
R
G
=47 Ω h
FE
=5 I
C
=20A 900
1 V
V
Note (1) Pulsed duration = 300 µ s, duty cycle ≤ 1.5%
2.1 Electrical characteristics (curves)
Figure 1.
Output characteristics Figure 2.
Dynamic collector-source saturation voltage
Figure 3.
DC current gain Figure 4.
Gate threshold voltage vs temperature
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Electrical characteristics STC20DE90HV
Figure 5.
Collector-source On voltage Figure 6.
Collector-source On voltage
Figure 7.
Base-source On voltage Figure 8.
Base-source On voltage
Figure 9.
Inductive load switching time Figure 10. Inductive load switching time
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STC20DE90HV
Figure 11. Reverse biased safe operating area
Electrical characteristics
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Package mechanical data STC20DE90HV
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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STC20DE90HV Package mechanical data
DIM.
D1
E e e1 b2 c
D
L
L1
L2
L3
øP
S
A
A1
A2 b
MIN.
4.85
2.20
0.95
2.50
0.40
23.85
15.45
2.54
5.08
10.20
2.20
3.55
TO247-4L HV MECHANICAL DATA mm.
TYP
2.50
1.27
1.10
24
21.50
15.60
2.50
18.50
3
5.50
MAX.
5.15
2.60
1.30
2.90
0.80
24.15
15.75
10.80
2.80
3.65
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7734874
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Revision history
26 Table 5.
Date
10-Oct-2006
Revision history
Revision
1 First release.
Changes
STC20DE90HV
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STC20DE90HV
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