TYPE
STN2NE10
®
V
DSS
100 V
STN2NE10
N - CHANNEL 100V - 0.33
Ω
- 2A - SOT-223
STripFET
POWER MOSFET
PRELIMINARY DATA
R
DS(on)
< 0.4
Ω
I
D
2 A
■
■
■
■
■
TYPICAL R
DS(on)
= 0.33
Ω
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100 % AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
2
1
2
3
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size
" stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
DC MOTOR CONTROL (DISK DRIVES,etc.)
■
■
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
P tot
100 V V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
100 V Drain- gate Voltage (R
GS
= 20 k
Ω
)
Gate-source Voltage V V
GS
±
20
I
I
D
D
Drain Current (continuous) at T c c
= 25 o
C 2
1.3
A Obsolete Product(s) - Obsolete Product(s)
I
DM
(
•
) Drain Current (pulsed) 8 A
Total Dissipation at T c
= 25 o
C 2.5
W
W/ o
C Derating Factor 0.02
dv/dt(
1
) Peak Diode Recovery voltage slope 6
T st g
Storage Temperature -65 to 150
T j
Max. Operating Junction Temperature 150
(
•
) Pulse width limited by safe operating area ( 1 ) I
SD
≤
7 A, di/dt
≤
200 A/
µ s, V
DD
≤
V
(BR)DSS
, T j
≤
T
JMAX
New RDS (on) spec. starting from JULY 98
V/ns o
C o
C
1/5 January 1999
STN2NE10
THERMAL DATA
R th j-pcb
R thj-amb
T l
Thermal Resistance Junction-PC Board Max
Thermal Resistance Junction-ambient Max
(Surface Mounted)
Maximum Lead Temperature For Soldering Purpose
50
60
260 o
C/W o
C/W o
C
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j
max)
Single Pulse Avalanche Energy
(starting T j
= 25 o
C, I
D
= I
AR
, V
DD
= 25 V)
Max Value
2
20
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
I
DSS
GSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250
µ
A V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating T c
= 125
o
C
V
GS
=
±
20 V
Min.
100
Typ.
ON (
∗
)
Symbol
V
GS(th)
Parameter Test Conditions
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
µ
A
Min.
2
Typ.
3
Max.
1
10
±
100
Max.
4
0.33
0.4
Unit
A mJ
Unit
V
µ
A
µ
A nA
Unit
V
Ω
R
DS(on)
I
D(o n)
Static Drain-source On
Resistance
V
GS
= 10 V I
D
= 1A
On State Drain Current V
DS
> I
D(o n)
x R
DS(on )max
V
GS
= 10 V
2 A
DYNAMIC
Symbol g fs
(
∗
)
C iss
C oss rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D(o n)
x R
DS(on )max
I
D
= 1 A
V
DS
= 25 V f = 1 MHz V
GS
= 0 V
Min.
1
Typ.
1.8
Max.
305
45
21
Unit
S pF pF pF
2/5
STN2NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol t d(on ) t r
Parameter
Turn-on Delay Time
Rise Time
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
R
= 50 V I
G
= 4.7
Ω
V
D
GS
= 35 A
= 10 V
(Resistive Load, see fig. 3)
V
DD
= 80 V I
D
= 7 A V
GS
= 10 V
SWITCHING OFF
Symbol t d(of f) t f
Parameter
Turn-off Delay Time
Fall Time t r(Voff) t f t c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 50 V I
D
R
G
=4.7
Ω
V
GS
= 3.5 A
= 10 V
(Resistive Load, see fig. 3)
V clamp
R
= 16 V I
G
= 4.7
Ω
V
D
GS
= 80 A
= 10 V
(Inductive Load, see fig. 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions
I
I
SD
SDM
(
•
)
Source-drain Current
Source-drain Current
(pulsed)
V
SD
(
∗
) Forward On Voltage I
SD
= 2 A V
GS
= 0 t rr
Q rr
Reverse Recovery
Time
Reverse Recovery
I
SD
= 7 A di/dt = 100 A/
µ s
V
DD
= 30 V
(see test circuit, fig. 5)
Charge
I
RRM
Reverse Recovery
Current
(
∗
) Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
Min.
Typ.
7
17
Max.
Unit ns ns
14
6
4
19 nC nC nC
Min.
Typ.
25
7
Max.
Unit ns ns
7
8
16 ns ns ns
Min.
Typ.
Max.
2
8
1.5
75
210
5.5
Unit
A
A
V ns
µ
C
A
3/5
STN2NE10
DIM.
g l1 l2
L e1 e4 c d f a b
2.9
0.67
6.7
3.5
6.3
MIN.
2.27
4.57
0.2
0.63
1.5
L
SOT-223 MECHANICAL DATA
3
0.7
7
3.5
6.5
mm
TYP.
2.3
4.6
0.4
0.65
1.6
0.73
7.3
3.7
6.7
MAX.
2.33
4.63
0.6
0.67
1.7
0.32
3.1
114.2
26.4
263.8
137.8
248
MIN.
89.4
179.9
7.9
24.8
59.1
l2
118.1
27.6
275.6
137.8
255.9
mils
TYP.
90.6
181.1
15.7
25.6
63
28.7
287.4
145.7
263.8
MAX.
91.7
182.3
23.6
26.4
66.9
12.6
122.1
d b f a c e4
B
C
E g
P008B
4/5
STN2NE10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences Obsolete Product(s) - Obsolete Product(s) granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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.
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