STN3NF06
N-channel 60V - 0.07
Ω
-4A - SOT-223
STripFET™ II Power MOSFET
General features
Type
STN3NF06
V
DSS
(@Tjmax)
60V
■
■
■
Exceptional dv/dt capability
100% avalanche tested
Avalanche rugged technology
R
DS(on)
<0.1
Ω
I
D
4A
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
2
1
SOT-223
2
3
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
STN3NF06
February 2007
Marking
N3NF06
Rev 6
Package
SOT-223
Packaging
Tape & reel
1/12 www.st.com
12
3
4
5
1
2
Contents
Contents
STN3NF06
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STN3NF06 Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage (V
Gate-source voltage
GS
= 0)
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
C
C
= 25°C
=100°C
Total dissipation at T
C
= 25°C
Derating factor dv/dt
(2)
E
AS
(3)
T
J
T stg
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature
Storage temperature
1.
Pulse width limited by safe operating area
2.
I
SD
≤
A, di/dt
≤
150 A /µ s , V
DD
≤
V
(BR)DSS
, T
J
≤
T
JMAX
3.
Starting T j
= 25 o
C, I
D
= 4A, V
DD
= 30V
Table 2.
Thermal data
Rthj-pcb Thermal resistance junction-PCB
(1) max
Rthj-pcb Thermal resistance junction-PCB
(2) max
T l
(3)
Maximum lead temperature for soldering purpose typ
1.
When Mounted on FR-4 board with 1 inch
2 pad, 2 oz. of Cu. and t < 10 sec.
2.
When Mounted on minimum recommended footprint
3.
for 10 sec. 1.6 mm from case
38
100
260
Value
60
± 20
4
2.9
16
3.3
0.026
10
200
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V/ns mJ
°C
°C/W
°C/W
°C
3/12
Electrical characteristics STN3NF06
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating @125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 1.5A
Min.
Typ.
60
2 3
0.07
Max.
Unit
1
10
±
100
4
0.10
V
µA
µA nA
V
Ω
Table 4.
Symbol
Dynamic
Parameter Test conditions g fs
(1)
C iss
C oss
C rss
Forward transconductance V
DS
= 15V, I
D
=1.5A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DD
GS
=48V, I
=10V
D
= 3A
(see Figure 14)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Min.
Typ.
Max.
Unit
3
315
70
30
10
3.5
3.5
13
S pF pF pF nC nC nC
Table 5.
Symbol
Switching times
Parameter t d(on) t r
Turn-on delay time rise time t d(off) t f
Turn-off delay time fall time
Test conditions
V
DD
=30 V, I
D
=1.5A,
R
G
=4.7
Ω, V
GS
=10V
(see Figure 13)
V
DD
=30 V, I
D
=1.5A,
R
G
=4.7
Ω, V
GS
=10V
(see Figure 13)
Min.
Typ.
Max.
Unit
7
18 ns ns
17
6 ns ns
4/12
STN3NF06 Electrical characteristics
Table 6.
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area.
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Test conditions
I
SD
=4A, V
GS
=0
I
SD
=4 A, di/dt = 100A/µs,
V
DD
=25 V, Tj=150°C
(see Figure 15)
Min.
Typ.
Max Unit
4
16
1.3
A
A
V
50
88
3.5
ns nC
A
5/12
Electrical characteristics
Figure 1.
Safe operating area Figure 2.
Thermal impedance
STN3NF06
Figure 3.
Output characteristics Figure 4.
Transfer characteristics
Figure 5.
Transconductance Figure 6.
Static drain-source on resistance
6/12
STN3NF06 Electrical characteristics
Figure 7.
Gate charge vs. gate-source voltage Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage vs. temperature
Figure 10.
Normalized on resistance vs. temperature
Figure 11. Source-drain diode forward characteristics
Figure 12.
Normalized b reakdown voltage vs. temperature
7/12
Test circuit
3 Test circuit
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
STN3NF06
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped Inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
8/12
STN3NF06
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data STN3NF06
DIM.
f g e1 e4 c d a b l1 l2
L
2.9
0.67
6.7
3.5
6.3
MIN.
2.27
4.57
0.2
0.63
1.5
L
SOT-223 MECHANICAL DATA
3
0.7
7
3.5
6.5
mm
TYP.
2.3
4.6
0.4
0.65
1.6
0.67
1.7
0.32
3.1
MAX.
2.33
4.63
0.6
0.73
7.3
3.7
6.7
114.2
26.4
263.8
137.8
248
MIN.
89.4
179.9
7.9
24.8
59.1
118.1
27.6
275.6
137.8
255.9
mils
TYP.
90.6
181.1
15.7
25.6
63 l2
26.4
66.9
12.6
122.1
MAX.
91.7
182.3
23.6
28.7
287.4
145.7
263.8
b f a
B
C
C
E g d c e4
P008B
10/12
STN3NF06
Table 7.
Date
Revision history
Revision
21-Jun-2004
04-Oct-2006
01-Feb-2007
4
5
6
Changes
Complete datasheet
The document has been reformatted
Typo mistake on Table 1
.
Revision history
11/12
STN3NF06
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
12/12
