STN2NE10L
N-channel 100V - 0.33
Ω
-2A - SOT-223
STripFET™ Power MOSFET
General features
Type
STN2NE10L
V
DSS
(@Tjmax)
100V
■
■
■
■
Exceptional dv/dt capability
Avalanche rugged technology
100% avalanche tested
Low threshold drive
R
DS(on)
<0.4
Ω
I
D
1.8A
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
2
1
SOT-223
2
3
Internal schematic diagram
Applications
■ Switching application
Part number
STN2NE10L
February 2007
Marking
N2NE10L
Rev 5
Package
SOT-223
Packaging
Tape & reel
1/12 www.st.com
12
3
4
5
1
2
Contents
Contents
STN2NE10L
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STN2NE10L Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage (V
Gate-source voltage
GS
= 0)
Drain current (continuous) at T
C
Drain current (continuous) at T
C
Drain current (pulsed)
= 25°C
=100°C
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope dv/dt
(2)
T
J
T stg
Operating junction temperature
Storage temperature
1.
Pulse width limited by safe operating area
2.
I
SD
≤
A, di/dt
≤
200 A /µ s , V
DD
≤
(BR)DSS
, T
J
≤
T
JMAX
Table 2.
Thermal data
Rthj-pcb Thermal resistance junction-PC Board max
Rthj-amb Thermal resistance junction-ambient max
T l
Maximum lead temperature for soldering purpose
Table 3.
Symbol
Avalanche characteristics
Parameter
I
AR
E
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=25V)
Value
100
± 20
1.8
1.3
7.2
2.5
0.02
6
150
-65 to 150
50
60
260
°C/W
°C/W
°C
Value
1.8
20
Unit
A mJ
Unit
V
V
A
A
A
W
W/°C
V/ns
°C
3/12
Electrical characteristics STN2NE10L
4/12
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
I
I
DSS
GSS
GS(th)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
R
DS(on)
Static drain-source on resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating @125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 1A
V
GS
= 5V, I
D
= 1A
Min.
Typ.
100
1 1.7
0.33
0.38
Max.
Unit
1
10
±
100
3
0.4
0.45
V
µA
µA nA
V
Ω
Ω
Table 5.
Symbol
Dynamic
Parameter Test conditions g fs
(1)
Forward transconductance
V
DS
>I
D(on)
x R
DS(on)max,
I
D
=1A
C
C
C iss oss rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25V, f=1 MHz, V
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DD
GS
=80V, I
=5V
D
= 7A
(see Figure 13)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
GS
=0
Min.
Typ.
Max.
Unit
1 3
345
45
20
10
5
4
14
S pF pF pF nC nC nC
Table 6.
Symbol
Switching times
Parameter t d(on) t r
Turn-on delay time t d(off) t f t r(Voff) t f t c
Turn-off-delay time fall time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test conditions
V
DD
=50 V, I
D
=3.5A,
R
G
=4.7
Ω, V
GS
=5V
V
DD
=50 V, I
D
=3.5A,
R
G
=4.7
Ω, V
GS
=5V
(see Figure 14)
V
DD
=80 V, I
D
=7A,
R
G
=4.7
Ω, V
GS
=5V
(see Figure 14)
Min.
Typ.
Max.
Unit
7 ns
22
8
8
9
19 ns ns ns ns ns
STN2NE10L Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area.
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
I
SD
=2A, V
GS
=0
I
SD
=7 A, di/dt = 100A/µs,
V
DD
=30 V, Tj=150°C
Min.
Typ.
Max Unit
2
8
1.5
A
A
V
75
190
5 ns nC
A
5/12
Electrical characteristics
Figure 1.
Safe operating area Figure 2.
Thermal impedance
STN2NE10L
Figure 3.
Output characteristics Figure 4.
Transfer characteristics
Figure 5.
Transconductance Figure 6.
Static drain-source on resistance
6/12
STN2NE10L Electrical characteristics
Figure 7.
Gate charge vs. gate-source voltage Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage vs. temperature
Figure 10.
Normalized on resistance vs. temperature
Figure 11. Source-drain diode forward characteristics
7/12
Test circuit
3 Test circuit
Figure 12. Switching times test circuit for resistive load
Figure 13. Gate charge test circuit
STN2NE10L
Figure 14. Test circuit for inductive load switching and diode recovery times
Figure 15. Unclamped Inductive load test circuit
Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
8/12
STN2NE10L
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data STN2NE10L
DIM.
f g e1 e4 c d a b l1 l2
L
2.9
0.67
6.7
3.5
6.3
MIN.
2.27
4.57
0.2
0.63
1.5
L
SOT-223 MECHANICAL DATA
3
0.7
7
3.5
6.5
mm
TYP.
2.3
4.6
0.4
0.65
1.6
0.67
1.7
0.32
3.1
MAX.
2.33
4.63
0.6
0.73
7.3
3.7
6.7
114.2
26.4
263.8
137.8
248
MIN.
89.4
179.9
7.9
24.8
59.1
118.1
27.6
275.6
137.8
255.9
mils
TYP.
90.6
181.1
15.7
25.6
63 l2
26.4
66.9
12.6
122.1
MAX.
91.7
182.3
23.6
28.7
287.4
145.7
263.8
b f a
B
C
C
E d c e4
P008B
10/12
STN2NE10L
Table 8.
Date
Revision history
Revision
19-Oct-2005
05-March-2006
19-Sep-2006
01-Feb-2007
2
3
4
5
Changes
Preliminary datasheet
Modified value on Table 4
New template, no content change
Typo mistake on Table 1
.
Revision history
11/12
STN2NE10L
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