STMicroelectronics STGYA75H120DF2 Datasheet

STGYA75H120DF2
Datasheet
Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT
in a Max247 long leads package
Features
TAB
1
2
3
TAB
3
2
1
Max247 long leads
•
Maximum junction temperature: TJ = 175 °C
•
•
5 μs of short-circuit withstand time
VCE(sat) = 2.1 V (typ.) @ IC = 75 A
•
•
Tight parameter distribution
Positive VCE(sat) temperature coefficient
•
•
Low thermal resistance
Very fast recovery antiparallel diode
Applications
•
•
•
•
C(2, TAB)
G(1)
UPS
Solar inverters
Welding
PFC
Description
E(3)
NG1E3C2T
This device is IGBT developed using an advanced proprietary trench gate fieldstop structure. This device is part of the H series of IGBTs, which represent
an optimum compromise between conduction and switching losses to maximize
the efficiency of high switching frequency converters. Moreover, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
Product status link
STGYA75H120DF2
Product summary
Order code
STGYA75H120DF2
Marking
G75H120DF2
Package
Max247 long leads
Packing
Tube
DS13822 - Rev 2 - October 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
STGYA75H120DF2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0 V)
1200
V
Continuous collector current at TC = 25 °C
150 (1)
Continuous collector current at TC = 100 °C
75
ICP(2)
Pulsed collector current
300
A
VGE
Gate-emitter voltage
±20
V
Continuous forward current at TC = 25 °C
150 (1)
Continuous forward current at TC = 100 °C
75
IFP(2)
Pulsed forward current
300
A
PTOT
Total power dissipation at TC = 25 °C
750
W
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 175
°C
Value
Unit
VCES
IC
IF
Parameter
A
A
1. Current level is limited by bond wires.
2. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol
RthJC
RthJA
DS13822 - Rev 2
Parameter
Thermal resistance, junction-to-case IGBT
0.2
Thermal resistance, junction-to-case diode
0.48
Thermal resistance, junction-to-ambient
50
°C/W
°C/W
page 2/15
STGYA75H120DF2
Electrical characteristics
2
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 3. Static characteristics
Symbol
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
voltage
VCE(sat)
Collector-emitter saturation
voltage
VF
Forward on-voltage
VGE = 0 V, IC = 2 mA
Min.
Typ.
1200
2.1
VGE = 15 V, IC = 75 A, TJ = 125 °C
2.4
VGE = 15 V, IC = 75 A, TJ = 175 °C
2.5
IF = 75 A
3.8
IF = 75 A, TJ = 125 °C
2.8
IF = 75 A, TJ = 175 °C
2.6
Gate threshold voltage
VCE = VGE, IC = 2 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 75 A
VGE(th)
Max.
6
2.6
V
V
7
V
VGE = 0 V, VCE = 1200 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
nA
Table 4. Dynamic characteristics
Symbol
DS13822 - Rev 2
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
Test conditions
VCE = 25 V, f = 1 MHz, VGE = 0 V
VCC = 960 V, IC = 75 A, VGE = 0 to 15 V
(see Figure 29. Gate charge test circuit)
Min.
Typ.
Max.
Unit
-
6300
-
pF
-
420
-
pF
-
146
-
pF
-
313
-
nC
-
50
-
nC
-
153
-
nC
page 3/15
STGYA75H120DF2
Electrical characteristics
Table 5. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
61
-
ns
tr
Current rise time
34
-
ns
1810
-
A/µs
366
-
ns
40
-
ns
4.3
-
mJ
(di/dt)on
Turn-on current slope
td(off)
Turn-off delay time
tf
Current fall time
VCE = 600 V, IC = 75 A,
VGE = 15 V, RG = 10 Ω
(see Figure 28. Test circuit for inductive
load switching)
Eon
(1)
Turn-on switching energy
Eoff(2)
Turn-off switching energy
3.9
-
mJ
Ets
Total switching energy
8.2
-
mJ
td(on)
Turn-on delay time
55
-
ns
tr
Current rise time
40
-
ns
1560
-
A/µs
387
-
ns
128
-
ns
6
-
mJ
(di/dt)on
Turn-on current slope
td(off)
Turn-off delay time
tf
Current fall time
VCE = 600 V, IC = 75 A,
VGE = 15 V, RG = 10 Ω, TJ = 175 °C
(see Figure 28. Test circuit for inductive
load switching)
Eon(1)
Turn-on switching energy
Eoff(2)
Turn-off switching energy
5.2
-
mJ
Ets
Total switching energy
11.2
-
mJ
tsc
Short-circuit withstand time
-
µs
VCC ≤ 600 V, VGE = 15 V, TJstart ≤ 150 °C
5
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
DS13822 - Rev 2
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
356
-
ns
trr
Reverse recovery time
Qrr
Reverse recovery charge
IF = 75 A, VR = 600 V,
-
2.6
-
µC
Irrm
Reverse recovery current
VGE = 15 V, di/dt = 1550A/µs
-
26.9
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
(see Figure 28. Test circuit for inductive
load switching)
-
1360
-
A/µs
Err
Reverse recovery energy
-
0.98
-
mJ
trr
Reverse recovery time
-
595
-
ns
Qrr
Reverse recovery charge
IF = 75 A, VR = 600 V,
-
6.9
-
µC
Irrm
Reverse recovery current
VGE = 15 V, di/dt = 1550 A/µs, TJ = 175 °C
-
37
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
(see Figure 28. Test circuit for inductive
load switching)
-
505
-
A/µs
Err
Reverse recovery energy
-
2.85
-
mJ
page 4/15
STGYA75H120DF2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
Figure 2. Collector current vs case temperature
GADG130920210946PDT
PTOT
(W) VGE ≥ 15 V, TJ ≤ 175 °C
IC
(A)
600
150
400
100
200
50
0
25
75
125
175
TC(°C)
Figure 3. Output characteristics (TJ = 25 °C)
IC
(A)
GADG130920210954OC25
VGE=15 V
13 V
250
0
25
IC
(A)
150
150
9V
100
50
2
4
VCE(sat)
(V)
7V
8
6
VCE (V)
GADG130920211000VCET
VGE=15 V
IC = 150 A
TC (°C)
GADG130920210955OC175
VGE=15 V
13 V
11 V
9V
100
0
0
2
2.2
VCE (V)
GADG130920211001VCEC
VGE=15 V
TJ = 175 °C
TJ = 25 °C
3
IC = 75 A
7V
8
6
VCE(sat)
(V)
4
2.6
4
Figure 6. VCE(sat) vs collector current
5
3.0
TJ = -40 °C
2
IC = 35 A
1.8
DS13822 - Rev 2
175
50
Figure 5. VCE(sat) vs junction temperature
1.4
-50
125
250
11 V
200
3.4
75
Figure 4. Output characteristics (TJ = 175 °C)
200
0
0
GADG130920210947CCT
VGE ≥ 15 V, TJ ≤ 175 °C
0
50
100
1
150
TJ (°C)
0
0
50
100
150
200
250
IC (A)
page 5/15
STGYA75H120DF2
Electrical characteristics (curves)
Figure 7. Collector current vs switching frequency
IC
(A)
Figure 8. Safe operating area
IC
(A)
GADG130920211100CCS
GADG130920211001FSOA
180
150
TC= 80 °C
120
tp= 1 µs
10 2
tp= 10 µs
TC= 100 °C
90
tp= 100 µs
10 1
60
30 Rectangular current shape
(duty cycle = 0.5, VCC = 600 V,
0 RG = 10 Ω, VGE= 0/15 V , Tj = 175 °C
10 0
10 1
tp= 1 ms
f (kHz)
10 1
10 2
VF
(V)
GADG130920211004TCH
GADG130920211004DVF
TJ= 25 °C
250
VCE (V)
10 3
Figure 10. Diode VF vs forward current
Figure 9. Transfer characteristics
IC
(A) VCE=10 V
10 0
10 0
Single pulse, TC = 25 °C,
TJ ≤ 175 °C, VGE = 15 V
TJ = -40 °C
8
TJ = 25 °C
200
6
150
TJ= 175 °C
4
TJ = 175 °C
100
2
50
0
4
6
8
10
12
VGE (V)
Figure 11. Normalized VGE(th) vs junction temperature
VGE(th)
(norm)
GIPG130320141400FSR
IC= 2mA
VCE= VGE
1.1
0
0
50
100
150
200
250
IF (A)
Figure 12. Normalized V(BR)CES vs junction temperature
GIPG130320141405FSR
V(BR)CES
(norm)
1.06
IC= 2mA
1.0
1.02
0.9
0.98
0.8
0.94
0.7
0.6
-50
DS13822 - Rev 2
0
50
100
150
TJ(°C)
0.9
-50
0
50
100
150
TJ(°C)
page 6/15
STGYA75H120DF2
Electrical characteristics (curves)
Figure 13. Capacitance variations
C
(pF)
GADG130920211005CVR
Cies
Figure 14. Gate charge vs gate-emitter voltage
GADG130920211005GCGE
VGE
(V) VCC = 960 V, IC = 75 A, IG = 4 mA
15
10 3
12
9
10 2
f = 1 MHz
10 1
10 -1
10 0
10 1
10 2
Coes
6
Cres
3
10 3
VCE (V)
Figure 15. Switching energy vs collector current
GADG130920211007SLC
E
(mJ) VCC = 600 V, RG = 10 Ω,
VGE = 15 V, TJ=175 ℃
18
0
0
50
100
150
250
GADG130920211034SLG
E
(mJ) VCC = 600 V, VGE = 15 V, IC = 75 A,
TJ = 175 ℃
8
Eoff
Eon
6
Eoff
9
5
6
4
3
30
60
90
120
IC (A)
Figure 17. Switching energy vs junction temperature
GADG130920211014SLT
E
(mJ) VCC = 600 V, RG = 10 Ω,
VGE = 15 V, IC= 75 A
6.0
3
0
5
10
15
20
GADG130920211033SLV
E
(mJ) IC= 75 A, RG = 10 Ω,
VGE = 15 V, TJ= 175 ℃
12
Eon
8
Eoff
5.0
6
Eoff
4.5
RG (Ω)
Figure 18. Switching energy vs collector emitter voltage
10
Eon
5.5
4
4.0
DS13822 - Rev 2
Qg (nC)
Figure 16. Switching energy vs gate resistance
7
12
3.5
0
300
Eon
15
0
0
200
2
50
100
150
TJ (°C)
0
300
400
500
600
700
800
900
VCE (V)
page 7/15
STGYA75H120DF2
Electrical characteristics (curves)
Figure 19. Switching times vs collector current
GADG130920211035STC
t
(ns) VCC = 600 V, VGE = 15 V, RG = 10 Ω,
TJ = 175 ℃
Figure 20. Switching times vs gate resistance
t
(ns)
GADG130920211036STR
td(off)
td(off)
tf
tf
10 2
10 2
td(on)
td(on)
tr
10 1
0
30
60
90
120
IC (A)
Figure 21. Reverse recovery current vs diode current
slope
Irrm
(A)
40
GADG150920211222RRC
6
75
VCC = 600 V, VGE = 15 V, IC = 75 A,
TJ = 175 ℃
0
5
10
15
20
10 1
RG (Ω)
Figure 22. Reverse recovery time vs diode current slope
trr
(ns)
GADG130920211045RRT
6
75
1000
35
tr
900
30
800
25
700
20
600
15
10
0
500
1000
1500
2000
di/dt (A/µs)
Figure 23. Reverse recovery charge vs diode current
slope
Qrr
(µC)
GADG130920211047RRQ
6
75
500
0
1000
1500
2000
di/dt (A/µs)
Figure 24. Reverse recovery energy vs diode current
slope
Err
(mJ)
3.0
7
500
GADG130920211059RRE
6
75
2.4
6
1.8
5
1.2
4
3
0
DS13822 - Rev 2
0.6
500
1000
1500
2000
di/dt (A/µs)
0.0
0
500
1000
1500
2000
di/dt (A/µs)
page 8/15
STGYA75H120DF2
Electrical characteristics (curves)
Figure 25. Thermal impedance for IGBT
K
MAX247LL_ZthJC
10 -1
JC
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
t p (s)
Figure 26. Thermal impedance for diode
Zth = k*RthJC
δ = tp/t
tp
t
DS13822 - Rev 2
page 9/15
STGYA75H120DF2
Test circuits
3
Test circuits
Figure 28. Gate charge test circuit
Figure 27. Test circuit for inductive load switching
C
A
A
k
L=100 µH
G
E
B
B
3.3
µF
C
G
+
k
RG
1000
µF
VCC
k
D.U.T
k
E
k
k
AM01505v1
AM01504v1
Figure 29. Switching waveform
Figure 30. Diode reverse recovery waveform
di/dt
Qrr
90%
IF
10%
VG
trr
ts
tf
90%
VCE
10%
IRRM
tcross
90%
IC
td(on)
ton
td(off)
tr(Ion)
t
IRRM
10%
tr(Voff)
VRRM
10%
tf
toff
dv/dt
AM01506v1
DS13822 - Rev 2
GADG180720171418SA
page 10/15
STGYA75H120DF2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
Max247 long leads package information
Figure 31. Max247 long leads package outline
Section C-C, D-D, E-E
Bottom view
Top view
DM00176969_rev_3
DS13822 - Rev 2
page 11/15
STGYA75H120DF2
Max247 long leads package information
Table 7. Max247 long leads package mechanical data
Dim.
DS13822 - Rev 2
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
a
0
0.15
a'
0
0.15
b
1.16
1.26
b1
1.15
b2
1.96
b3
1.95
b4
2.96
b5
2.95
1.20
1.22
2.06
2.00
2.02
3.06
3.00
3.02
b6
2.25
b7
3.25
c
0.59
0.66
c1
0.58
0.60
0.62
D
20.90
21.00
21.10
D1
16.25
16.55
16.85
D2
1.05
1.17
1.35
D3
0.58
0.68
0.78
D4
2.90
3.00
3.10
E
15.70
15.80
15.90
E1
13.10
13.26
13.50
E3
1.35
1.45
1.55
E4
1.14
1.24
1.34
e
5.34
5.44
5.54
K
4.25
4.35
4.45
L
19.80
19.92
20.10
L1
3.90
4.30
M
0.70
1.30
P
2.40
T
9.80
10.20
U
6.00
6.40
2.50
2.60
page 12/15
STGYA75H120DF2
Revision history
Table 8. Document revision history
DS13822 - Rev 2
Date
Revision
Changes
08-Sep-2021
1
First release.
13-Oct-2021
2
Updated Table 3. Static characteristics.
page 13/15
STGYA75H120DF2
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1
Max247 long leads package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
DS13822 - Rev 2
page 14/15
STGYA75H120DF2
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DS13822 - Rev 2
page 15/15
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