T810T-8T
Datasheet
8 A 800 V logic level Triac in TO-220AB package
A2
A2
G
A1
TO-220AB
A1
A2
G
Features
• Medium current Triac
• Three quadrants
• ECOPACK2 compliant
Applications
• General purpose AC line load switching
• Motor control circuits
• Small home appliances
• Lighting
• Inrush current limiting circuits
• Overvoltage crowbar protection
Description
Available in through-hole package, the T810T-8T Triac can be used for the on/off or phase angle control function in general purpose AC switching.
This device can be directly driven by a microcontroller due to its 10 mA gate current requirement.
Product status link
T810T-8T
Order code
Package
I
T(RMS)
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GT
Product summary
T810T-8T
TO-220AB
8 A
800 V
900 V
10 mA
DS10471 - Rev 2 - September 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
T810T-8T
Characteristics
Characteristics
Symbol
I
T(RMS)
I
TSM
I 2 t
Table 1. Absolute maximum ratings (limiting values)
Parameter
On-state RMS current (full sine wave)
Non repetitive surge peak on-state current (T j
initial = 25 °C)
I 2 t value for fusing, (T j
initial = 25 °C)
V
DRM
/V
RRM
Repetitive surge peak off-state voltage
T c
= 131 °C
F = 50 Hz t = 20 ms
F = 60 Hz t = 16.7 ms t p
= 10 ms
T j
= 150 °C
T j
= 125 °C t p
= 10 ms V
DSM
/V
RSM dl/dt
Non repetitive surge peak off-state voltage
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr ≤ 100 ns
Peak gate current I
GM
P
G(AV)
T stg
T j
T
L
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum lead temperature soldering during 10 s
F = 100 Hz t p
= 20 µs T j
= 150 °C
T j
= 150 °C
Value
8
60
63
24
600
800
900
100
Unit
A
A
A 2 s
V
V
A/µs
4
1
-40 to +150 °C
-40 to +150 °C
260 °C
A
W
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(1)
I
L
dV/dt (1)
(dI/dt)c
(1)
Table 2. Electrical characteristics (T j
= 25 °C unless otherwise specified)
Test conditions
V
D
= 12 V, R
L
= 30 Ω
V
D
= 12 V, R
L
= 30 Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ , T j
= 150 °C
I
T
= 500 mA
I
G
= 1.2 x I
GT
V
D
= 536 V, gate open
VD = 402 V, gate open
(dV/dt)c = 0.1 V/μs
(dV/dt)c = 10 V/μs
I - II - III
I - II - III
I - II - III
I - III
II
T j
= 125 °C
T j
= 150 °C
T j
= 125 °C
T j
= 150 °C
T j
= 125 °C
T j
= 150 °C
Min.
Max.
Max.
Min.
Max.
Max.
Min.
Min.
Value
0.5
10
1.3
0.2
15
20
25
250
170
6.0
4.2
3.2
1.4
1. For both polarities of A2 referenced to A1
V/µs
A/ms
Unit mA
V
V mA mA
DS10471 - Rev 2 page 2/11
T810T-8T
Characteristics
Symbol
V
T
(1)
V
TO
(1)
R d
(1)
I
TM
= 11.3 A, t p
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
R
= 800 V
I
DRM
, I
RRM
V
D
= V
R
= 600 V
1. For both polarities of A2 referenced to A1
Table 3. Static characteristics
Test conditions
T j
= 25 °C
T j
= 150 °C
T j
= 150 °C
T j
= 25 °C
T j
= 125 °C
T j
= 150 °C
Symbol
R th(j-c)
R th(j-a)
Junction to case (AC)
Junction to ambient
Table 4. Thermal parameters
Parameter
Max.
Max.
Max.
Max.
Max.
Value
1.55
0.85
57
5
0.8
2.4
Unit
V mΩ
µA mA
Value
1.9
60
Unit
°C/W
°C/W
DS10471 - Rev 2 page 3/11
T810T-8T
Characteristics (curves)
1.1
Characteristics (curves)
6
4
2
0
0
Figure 1. Maximum power dissipation versus on-state
RMS current
10
P(W)
α =180°
8
1 2 3 4
α
180 °
α
5 6
IT
(RMS)
(A)
7 8
Figure 2. On-state RMS current versus case temperature
9
8
7
6
5
2
1
4
3
0
0
IT
(RMS)
(A)
25 50
Tc(°C)
75 100 125
α =180°
150
Figure 3. On-state RMS current versus ambient temperature (free air convection)
3.0
IT
(RMS)
(A)
2.5
2.0
1.5
1.0
0.5
0.0
0 25 50
Ta(°C)
75 100 125 150
Figure 4. Relative variation of thermal impedance versus pulse duration
K = [Zth/ Rth]
1.0E+00
Zth(j-c)
Zth(j-a)
1.0E-01 t
P
(s)
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 5. On-state characteristics (maximum values)
100
ITM(A)
10
Vto= 0.85 V
Rd = 57 mΩ
1
0.0
Tj = 150 °C
0.5
1.0
Tj = 25 °C
1.5
2.0
2.5
3.0
VTM(V)
3.5
4.0
Figure 6. Surge peak on-state current versus number of cycles
70
ITSM(A)
60 Non repetitive Tj initial = 25 °C
20 ms
50
One cycle
40
30
20
Repetitive Tc = 131 °C
10
0
1 10
Number of cycles
100 1000
DS10471 - Rev 2 page 4/11
α α
T810T-8T
Characteristics (curves)
Figure 7. Non repetitive surge peak on-state current
1000
I
TSM
(A)
Tj initial = 25 °C
dl/dt limitation: 100 A/µs
I
TSM
100
10
0.01
0.10
1.00
Tp(ms)
10.00
Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values)
2.5
IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C]
I
GT
Q3
2.0
1.5
I
GT
Q1-Q2
1.0
0.5
VGT
0.0
-50 -25 0 25
T j
(°C)
50 75 100 125 150
Figure 9. Relative variation of critical rate of decrease of main current versus junction temperature (typical values)
4
3
2
6
5
8
(dI/dt)c [Tj] / (dI/dt)c [Tj = 150 °C]
7
1
0
25 50 75 100
(dV/dt)c = 10 V/µs
125
Tj(°C)
150
Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values)
2.0
IH, IL [ Tj ] / IH, IL [ Tj = 25 °C]
I
H
1.5
I
L
1.0
0.5
0.0
-50 -25 0 25
T j
(°C)
50 75 100 125 150
Figure 11. Relative variation of critical rate of decrease of main current (dI/dt)C versus reapplied (dV/dt)
C
(maximum values)
3
(dI/dt)c [ (dV/dt)c ] / specified (dI/dt)c
2
Tj = 150 (°C)
1
Tj = 125 (°C)
0
0.1
1.0
10.0
(dV/dt)c (V/µs)
100.0
3
2
1
Figure 12. Relative variation of static dV/dt immunity versus junction temperature (typical values)
5 dV/dt [T j
] / dV/dt [T j
= 150 °C]
VD = VR = 402 V; 150 (°C)
4
0
25 50 75
T j
(°C)
100 125 150
DS10471 - Rev 2 page 5/11
α α
T810T-8T
Characteristics (curves)
Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values)
IDRM, IRRM [ Tj; VDRM, VRRM] / IDRM, IRRM
1.0E+00
V
DRM
= V
RRM
= 800 V
1.0E-01
V
DRM
= V
RRM
= 600 V
V
DRM
= V
RRM
= 400 V
1.0E-02
1.0E-03
1.0E-04
25 50 75
Tj (°C)
100
[T
[T j j
= 125 °C; 800 V]
= 150 °C; 600 V]
125 150
DS10471 - Rev 2
α page 6/11
360°
2
2.1
T810T-8T
Package information
Package information
•
•
•
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-220AB package information
Epoxy resin is halogen free and meets UL94 flammability standard, level V0
Lead-free plating package leads
Recommended torque: 0.4 to 0.6 N·m
Figure 14. TO-220AB package outline
DS10471 - Rev 2 page 7/11
DS10471 - Rev 2
T810T-8T
TO-220AB package information
Table 5. TO-220AB package mechanical data
Dimensions
Ref.
b2
C c1 c2 e
A a1 a2
B b1
I4
M
I2
I3
F
I
L
Min.
15.20
2.40
2.40
6.20
3.73
2.65
13.00
10.00
0.61
1.23
4.40
0.49
1.14
1.14
15.80
Millimeters
Typ.
3.75
16.40
2.6
1. Inch dimensions are for reference only.
Max.
15.90
2.72
2.70
6.60
3.88
2.95
14.00
10.40
0.88
1.32
4.60
0.70
1.70
1.70
16.80
Min.
0.5984
0.5118
0.3937
0.0240
0.0484
0.1732
0.0193
0.0945
0.0945
0.2441
0.1469
0.1043
0.0449
0.0449
0.6220
Inches
Typ.
0.1476
0.6457
0.1024
Max.
0.6260
0.5512
0.4094
0.0346
0.0520
0.1811
0.0276
0.1071
0.1063
0.2598
0.1528
0.1161
0.0669
0.0669
0.6614
page 8/11
3
Ordering information
Figure 15. Ordering information scheme
T 8 10 T - 8 T
T810T-8T
Ordering information
Order code
T810T-8T
Triac
Current
8 = 8 A
Gate sensitivity
10 = 10 mA
Specific application
T = Increased (dI/dt) and dV/dt producing reduced I
TSM
Voltage
8 = 800 V
Package
T = TO-220AB
Marking
T810T-8T
Table 6. Ordering information
Package
TO-220AB
Weight
2.0 g
Base qty.
50
Delivery mode
Tube
DS10471 - Rev 2 page 9/11
Revision history
Date
07-Nov-2014
12-Sep-2019
Version
1
2
Table 7. Document revision history
Changes
Initial release.
Updated Figure 14
and
Table 5
.
T810T-8T
DS10471 - Rev 2 page 10/11
T810T-8T
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DS10471 - Rev 2 page 11/11
