T635T-8T
Datasheet
6 A 800 V Snubberless Triac in TO-220AB package
A2
A2
G
A1
TO-220AB
A1
A2
G
Features
• Medium current Triac
• High static and dynamic commutation
• Three quadrants
• ECOPACK2 compliant
Applications
• General purpose AC line load switching
• Motor control circuits
• Small home appliances
• Lighting
• Inrush current limiting circuits
• Overvoltage crowbar protection
Description
Available in through-hole package, the T635T-8T Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required.
This device can be used without a snubber circuit when the limits defined in this datasheet are respected.
Product status link
T635T-8T
Order code
Package
I
T(RMS)
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GT
Product summary
T635T-8T
TO-220AB
6 A
800 V
900 V
35 mA
DS9634 - Rev 4 - September 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
T635T-8T
Characteristics
Characteristics
Symbol
I
T(RMS)
I
TSM
I 2 t
Table 1. Absolute maximum ratings (limiting values)
Parameter
On-state RMS current (full sine wave)
Non repetitive surge peak on-state current (T j
initial = 25 °C)
I 2 t value for fusing, (T j
initial = 25 °C)
V
DRM
/V
RRM
Repetitive surge peak off-state voltage
T c
= 135 °C
F = 50 Hz t = 20 ms
F = 60 Hz t = 16.7 ms t p
= 10 ms
T j
= 150 °C
T j
= 125 °C t p
= 10 ms V
DSM
/V
RSM dl/dt
Non repetitive surge peak off-state voltage
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr ≤ 100 ns
Peak gate current I
GM
P
G(AV)
T stg
T j
T
L
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum lead temperature soldering during 10 s
F = 100 Hz t p
= 20 µs T j
= 150 °C
T j
= 150 °C
Value
6
45
47
13
600
800
900
100
Unit
A
A
A 2 s
V
V
A/µs
4
1
-40 to +150 °C
-40 to +150 °C
260 °C
A
W
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(1)
I
L
dV/dt (1)
(dI/dt)c
(1)
Table 2. Electrical characteristics (T j
= 25 °C unless otherwise specified)
Test conditions
V
D
= 12 V, R
L
= 30 Ω
V
D
= 12 V, R
L
= 30 Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ , T j
= 150 °C
I
T
= 500 mA
I
G
= 1.2 x I
GT
V
D
= 536 V, gate open
VD = 402 V, gate open
Without snubber (dV/dt)c > 20 V/μs
I - II - III
I - II - III
I - II - III
I - III
II
T j
= 125 °C
T j
= 150 °C
T j
= 125 °C
T j
= 150 °C
Min.
Max.
Max.
Min.
Max.
Max.
Min.
Min.
Value
1.75
35
1.3
0.2
40
60
65
2000
1000
6
3
1. For both polarities of A2 referenced to A1
V/µs
A/ms
Unit mA
V
V mA mA
DS9634 - Rev 4 page 2/11
T635T-8T
Characteristics
Symbol
V
T
(1)
V
TO
(1)
R d
(1)
I
TM
= 8.5 A, t p
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
R
= 800 V
I
DRM
, I
RRM
V
D
= V
R
= 600 V
1. For both polarities of A2 referenced to A1
Table 3. Static characteristics
Test conditions
T j
= 25 °C
T j
= 150 °C
T j
= 150 °C
T j
= 25 °C
T j
= 125 °C
T j
= 150 °C
Symbol
R th(j-c)
R th(j-a)
Junction to case (AC)
Junction to ambient
Table 4. Thermal parameters
Parameter
Max.
Max.
Max.
Max.
Max.
Value
1.55
0.85
75
5
0.6
2.0
Unit
V mΩ
µA mA
Value
2.1
60
Unit
°C/W
°C/W
DS9634 - Rev 4 page 3/11
T635T-8T
Characteristics (curves)
1.1
Characteristics curves
Figure 1. Maximum power dissipation versus on-state
RMS current (full cycle)
8
P(W)
α =180
6
4
2
0
0 1 2
I
T(RMS)
(A)
3 4 5
180°
6
4
3
2
1
0
0
Figure 2. On-state RMS current versus case temperature
(full cycle)
7
I
T(RMS)
(A)
α=180 °
6
5
2 5 50
T
C
(°C)
75 100 125 150
Figure 3. On-state RMS current versus ambient temperature (free air convection)
3.0
I
T(RMS)
(A)
2.5
2.0
1.5
1.0
0.5
0.0
0 2 5 50 75 100
α = 180°
125 150
Figure 4. Relative variation of thermal impedance versus pulse duration
1.0E+00
K = [Zth / Rth]
Zth(j-c)
Zth(j-a)
1.0E-01
1.0E-02
1.0E-01 1.0E+00 1.0E+01 1.0E+02 tp (s)
1.0E+03
Figure 5. On-state characteristics (maximum values)
100
I
TM
(A)
R d
T j
V
TO max :
= 0.85 V
= 75 mΩ
10
T j
= 150 °C
T j
= 25 °C
1
0.0
0 .5
1.0
1 .5
2.0
2 .5
3.0
V
TM
(V)
3 .5
4.0
Figure 6. Surge peak on-state current versus number of cycles
50
ITSM(A)
45
40
35
30
25
20
15
10
5
0
1
Repetitive
T
C
= 135 °C
Non repetitive
T j initial=25 °C
1 0 t = 20 ms
One cycle
100
Number of cycles
1000
DS9634 - Rev 4 page 4/11
T635T-8T
Characteristics (curves)
Figure 7. Non repetitive surge peak on-state current
1000
ITSM(A) dI/dt limitation: 100 A/µs
T j initial = 25 °C
I
TSM
100
Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values)
2.0
IGT[Tj] / IGT[Tj = 25 °C], VGT[Tj] / VGT[Tj = 25 °C ]
1.5
I
GT
Q1-Q2
I
GT
Q3
1.0
V
GT
10
0.01
Sinusoidal pulse with
0.10
1.00
10.00
0.5
0.0
-50 -25 0 25 50 75 100
Tj(°C)
125 150
2
1
0
25
Figure 9. Relative variation of static dV/dt immunity versus junction temperature (typical values)
5 dV/dt [ T j
] / dV/dt [ T j
=150 °C]
(dV/dt) > 5 KV/µs
4
V
D
= V
R
= 402 V
3
50 75 100 125
T j
(°C)
150
Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values)
2.0
IH, IL[Tj] / IH, IL[Tj = 25 °C]
1.5
I
H
I
L
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Figure 11. Relative variation of critical rate of decrease of main current (di/dt)c versus reapplied (dV/dt)c (typical values)
Figure 12. Relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature (typical values)
5
(dI/dt)c [( dV/dt)c] / speci fied (dI/dt)c
4
3
2
1
0
0.1
1 .0
10.0
T j
= 150 °C
(dV/dt)c (V/µs)
100.0
8
(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]
7
6
5
4
3
2
1
0
25 50 75 100 125 150
DS9634 - Rev 4 page 5/11
T635T-8T
Characteristics (curves)
Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values)
1.0E+00
IDRM , IRRM @ [Tj ]; VDRM, VRRM] / IDRM , IRRM @ [Tjmax]*
V
DRM
=V
RRM
=800 V
1.0E-01
V
DRM
=V
RRM
=600 V
1.0E-02
1.0E-03
1.0E-04
25 50
V
DRM
=V
RRM
=400 V
*
IDRM, IRRM @:
[Tjmax = 125 °C; 800 V]
[Tjmax = 150 °C; 600 V]
75 100 1 25 150
DS9634 - Rev 4 page 6/11
2
2.1
T635T-8T
Package information
Package information
•
•
•
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-220AB package information
Epoxy resin is halogen free and meets UL94 flammability standard, level V0
Lead-free plating package leads
Recommended torque: 0.4 to 0.6 N·m
Figure 14. TO-220AB package outline
DS9634 - Rev 4 page 7/11
DS9634 - Rev 4
T635T-8T
TO-220AB package information
Table 5. TO-220AB package mechanical data
Dimensions
Ref.
b2
C c1 c2 e
A a1 a2
B b1
I4
M
I2
I3
F
I
L
Min.
15.20
2.40
2.40
6.20
3.73
2.65
13.00
10.00
0.61
1.23
4.40
0.49
1.14
1.14
15.80
Millimeters
Typ.
3.75
16.40
2.6
1. Inch dimensions are for reference only.
Max.
15.90
2.72
2.70
6.60
3.88
2.95
14.00
10.40
0.88
1.32
4.60
0.70
1.70
1.70
16.80
Min.
0.5984
0.5118
0.3937
0.0240
0.0484
0.1732
0.0193
0.0945
0.0945
0.2441
0.1469
0.1043
0.0449
0.0449
0.6220
Inches
Typ.
0.1476
0.6457
0.1024
Max.
0.6260
0.5512
0.4094
0.0346
0.0520
0.1811
0.0276
0.1071
0.1063
0.2598
0.1528
0.1161
0.0669
0.0669
0.6614
page 8/11
3
T635T-8T
Ordering information
Ordering information
Figure 15. Ordering information scheme
T 6 35 T - 8 T
Triac
Current
6 = 6 A
Gate sensitivity
35 = 35 mA
Specific application
T = Increased (dl/dt)c and dV/dt producing reduced I
TSM
Voltage (V
DRM
, V
RRM
)
8 = 800 V
Package
T = TO-220AB
Order code
T635T-8T
Marking
T635T-8T
Table 6. Ordering information
Package
TO-220AB
Weight
2.0 g
Base qty.
50
Delivery mode
Tube
DS9634 - Rev 4 page 9/11
Revision history
Date
05-Aug-2013
01-Jul-2014
28-Jul-2014
09-Sep-2019
Table 7. Document revision history
Revision
1
2
3
4
Changes
Initial release.
Updated Table 2.
Updated Table 5.
Updated Figure 14 and
Table 5
.
T635T-8T
DS9634 - Rev 4 page 10/11
T635T-8T
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks . All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS9634 - Rev 4 page 11/11
