T1610T-8G
Datasheet
16 A - 800 V logic level T-series Triac in D²PAK
A2
A1
A2
G
D²PAK
A2: Anode2
A1: Anode1
G: Gate
G
A2
A1
Product status link
T1610T-8G
Product summary
I
T(RMS)
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GT
16 A
800 V
900 V
10 mA
Features
• 150 °C maximum junction temperature
• Three quadrants
• High commutation on resistive loads
• Surge capability V
DSM
, V
RSM
= 900 V
• Benefits:
– Easy direct control by MCU thanks to low 10 mA I
GT
– Increase of thermal margin due to extended working T j
up to 150 °C
Applications
• General purpose AC line load switching
• Small home appliances with resistive loads
• Hybrid relays
• Inrush current limiting circuits
• Overvoltage crowbar protection
Description
The SMD T1610T-8G Triac can be used for the on/off or phase angle control function in general purpose AC switching with resistive loads. A Logic level T-series Triac, the
T1610T-8G can be controlled directly from an MCU with a simplified circuit. T-series triacs are optimized for high EMI constraints.
The surface mount D 2 PAK package enables compact SMT designs for automated manufacturing.
D 2 PAK package's molding compound resin is halogen-free and meets UL94 flammability standard level V0.
Package environmentally friendly Ecopack2 graded (RoHS and Halogen Free compliance).
DS12532 - Rev 3 - October 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1
T1610T-8G
Characteristics
Characteristics
Table 1. Absolute maximum ratings (limiting values), T j
= 25 °C unless otherwise specified
Symbol Parameter
V
DRM
/V
RRM
Repetitive peak off-state voltage (50-60 Hz)
V
DSM
/V
RSM
I
T(RMS)
Non Repetitive peak off-state voltage
RMS on-state current (full sine wave)
I
TSM
Non repetitive surge peak on-state current (full cycle, T j
°C
initial = 25
I 2 t dl/dt
I
GM
V
GM
P
G(AV)
T stg
T j
I 2 t value for fusing
Critical rate of rise of on-state current, I
G
= 2 x I
GT
, tr ≤ 100 ns
Peak gate current
Peak Gate Voltage
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
T j
= 125 °C
T j
= 150 °C t p
= 10 ms, T
T c t = 16.7 ms t = 20 ms t p
= 126 °C
= 10 ms f = 100 Hz j
= 25 °C t p
= 20 µs, T j
= 150 °C
T j
= 150 °C
Value
800
600
900
16
126
120
95
100
A
4
5
1
V
W
-40 to +150 °C
-40 to +150 °C
A 2 s
A/µs
A
Unit
V
V
V
A
Symbol
I
GT
(1)
V
GT
V
GD
I
L
I
H
(2)
dV/dt
(2)
(dl/dt)c (2)
Table 2. Electrical characteristics (T j
= 25 °C, unless otherwise specified)
Test conditions
V
D
= 12 V, R
L
= 30 Ω
V
D
= 12 V, R
L
= 30 Ω
V
D
= 800 V, R
L
= 3.3 kΩ
I
G
= 1.2 x I
GT
I
G
= 1.2 x I
GT
I
T
= 500 mA, gate open
V
D
= 536 V, gate open
V
D
= 402 V, gate open
T j
= 125 °C
(dV/dt)c = 0.1 V/μs
(dV/dt)c = 10 V/μs
Quadrants; T j
I - II - III
I - II - III
I - II - III
I - III
II
T j
= 125 °C
T j
= 150 °C
T j
= 125 °C
T j
= 150 °C
T j
= 125 °C
T j
= 150 °C
Min.
Min.
Max.
Max.
Min.
Min.
Max.
Max.
Min.
Max.
Value
30
25
100
50
9
5.4
10
1.3
0.2
20
3
1.8
1. Minimum I
GT
is guaranteed at 5% of I
GT
max
2. For both polarities of A2 referenced to A1.
A/ms
Unit mA mA
V/µs
V/µs mA
V
V mA
A/ms
DS12532 - Rev 3 page 2/12
T1610T-8G
Characteristics
Symbol
V
TM
(1)
V
TO
(1)
R
D
(1)
Table 3. Static characteristics
Test conditions
I
T
= 22.6 A, t p
= 380 µs
Threshold on-state voltage
Dynamic resistance
V
DRM
= V
RRM
= 800 V
I
DRM
/I
RRM
V
DRM
= V
RRM
= 600 V
1. For both polarities of A2 referenced to A1.
T j
25 °C
150 °C
150 °C
25 °C
125°C
150 °C
Table 4. Thermal resistance
Symbol
R
R th(j-c) th(j-a)
Junction to case (AC)
Parameter
Junction to ambient (S
CU
(1) = 2 cm
2 )
D 2
1. Scu : copper pad surface under tab, 35 μm copper thickness on FR4 PCB.
PAK Max.
Typ.
Max.
Max.
Max.
Max.
Max.
Value
1.15
45
Value
1.55
0.85
34
5
1.0
3.6
Unit
°C/W
°C/W
Unit
V
V mΩ
µA mA mA
DS12532 - Rev 3 page 3/12
T1610T-8G
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Maximum power dissipation versus on-state
RMS current
22
20
18
16
14
12
10
8
6
4
2
0
0
P(W)
α = 180°
2 4 6
I
T (RMS)
(A)
8 10 12 14
180°
16
Figure 2. On-state RMS current versus case temperature
I T(RMS) (A)
18
16
14
12
10
8
6
4
2
0
0 25 50
α = 180°
T c(°C)
75 100 125 150
Figure 3. On-state RMS current versus ambient temperature (free air convection)
4.0
I
T(RMS)
(A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 25 50
T a(°C)
75 100
α = 180°
125 150
Figure 4. Relative variation of thermal impedance versus pulse duration
1.0E+00
Z th(j-c)
Z th(j-a)
1.0E-01
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04
Figure 5. Relative variation of gate trigger voltage and current versus junction temperature (typical values)
2.0
I
GT
,V
GT
[Tj] / I
GT
,V
GT
[Tj = 25 °C]
3Q I
GT
Q3
1.5
1.0
3Q I
GT
Q1-Q2
0.5
0.0
-50 -30 -10 10 30
T j
(°C)
50 70 90 110 130 150
Figure 6. Relative variation of holding current and latching current versus junction temperature (typical values)
2.0
I H ,I L [Tj] / I H ,I L [Tj = 25 °C]
1.5
1.0
I
L
0.5
0.0
-50 -30 -10 10
I
H
30
T j
(°C)
50 70 90 110 130 150
DS12532 - Rev 3 page 4/12
T1610T-8G
Characteristics (curves)
Figure 7. Surge peak on-state current versus number of cycles
I
TSM
(A)
60
50
40
30
20
10
0
130
120
110
100
90
80
70
1
Repetitive
Tc = 126°C
Non repetitive
Tj initial = 25 °C
10
Number of cycles
100 t=20ms
One cycle
1000
Figure 8. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms
10000
I
TSM
(A)
1000
100
10
0.01
dI/dt limitation:
100A/µs
0.10
1.00
I
TSM
10.00
Figure 9. Relative variation of critical rate of decrease of main current versus junction temperature (typical values)
Figure 10. Relative variation of critical rate of decrease of main voltage versus junction temperature
4 dV/dt [Tj] / dV/dt [Tj = 150 °C]
(dI/dt)c [Tj] / (dI/dt)c [Tj = 150 °C]
10
9
8
7
6
5
4
3
2
1
0
25 50 75
Tj(°C)
100 125 150
3
2
1
0
25 50
Tj(°C)
75
V
D
= V
R
= 536 V
100 125
Figure 11. On-state characteristics (maximum values)
I
TM
(A)
1000
Tj max.
Vto = 0.85 V
Rd = 34 mΩ
Tj = 25 °C
100
10
1
0 1
Tj = 150 °C
2 3 4
V
TM
(V)
5
Figure 12. Relative variation of leakage current versus junction temperature for different values of blocking voltage
I
DRM
/I
RRM
[Tj, V
DRM
/V
RRM
] / I
DRM
/I
RRM
[Tj max.,V
DRM
/V
RRM
]*
1.0E+00
*[T j
max = 125 °C; V
DRM
[T j
max = 150 °C; V
DRM
, V
RRM
= 800 V]
, V
RRM
= 600 V]
1.0E-01 V
DRM
= V
RRM
= 800 V
1.0E-02
V
DRM
= V
RRM
= 600 V
V
DRM
= V
RRM
= 400 V
1.0E-03
1.0E-04
25 50 75 100 125
Tj(°C)
150
DS12532 - Rev 3 page 5/12
T1610T-8G
Characteristics (curves)
Figure 13. Thermal resistance junction to ambient versus copper surface under tab
60
50
40
30
20
10
0
0
80
R th(j-a)
(°C/W)
Epoxy printed circuit board FR4, e
Cu
= 35 µm
70
5 10 15 20 25 30
D²PAK
S
Cu
(cm²)
35 40
DS12532 - Rev 3 page 6/12
2
2.1
T1610T-8G
Package information
Package information
•
•
•
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
D²PAK package information
ECOPACK2 compliant
Lead-free package leads finishing
Molding compound resin is halogen-free and meets UL standard level V0
Figure 14. D²PAK package outline
E c2
A
E1
E2
1 2 3 b2 b e
G
Max resin gate protrusion: 0.5 mm (1)
A1
A2
A3
R
Gauge Plane c
V2
(1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical.
DS12532 - Rev 3 page 7/12
DS12532 - Rev 3
T1610T-8G
D²PAK package information
Table 5. D²PAK package mechanical data
Dimensions
Ref.
E2
G
H
L
L2
L3
R
V2 (2)
D1
D2 e
E
E1 b b2 c c2
D
A
A1
A2
A3
Min.
4.30
2.49
0.03
0.70
1.25
0.45
1.21
8.95
7.50
1.30
10.00
8.30
6.85
4.88
15
1.78
1.19
1.40
0°
Millimeters
Typ.
0.25
2.54
0.40
1. Dimensions in inches are given for reference only
2. Degrees
10.28
8.70
7.25
5.28
15.85
2.28
1.40
1.75
8°
0.93
1.7
0.60
1.36
9.35
8.00
1.70
Max.
4.60
2.69
0.23
Min.
0.1693
0.0980
0.0012
0.3937
0.3268
0.2697
0.1921
0.5906
0.0701
0.0468
0.0551
0.0276
0.0492
0.0177
0.0476
0.3524
0.2953
0.0512
0°
Inches
(1)
Typ.
0.0098
0.1
0.0157
Max.
0.1811
0.1059
0.0091
0.4047
0.3425
0.2854
0.2079
0.6240
0.0898
0.0551
0.0689
0.0366
0.0669
0.0236
0.0535
0.3681
0.3150
0.0669
8° page 8/12
DS12532 - Rev 3
T1610T-8G
D²PAK package information
Figure 15. D²PAK recommended footprint (dimensions are in mm)
16.90
10.30
1.30
5.08
3.70
8.90
Figure 16. D²PAK stencil definitions(dimensions are in mm) page 9/12
3
T1610T-8G
Ordering information
Ordering information
Figure 17. Ordering information scheme
T 16 10 T - 8 G TR
Series
T = T-series Triac
Current (RMS) / Type
16 = 16 A
Gate Current
10 = 10 mA
Specific application
T = T-series Triac
Voltage
8 = 800 V
Package
G = D²PAK
Packing
Blank = Tube
TR = Tape and reel
Order code
T1610T-8G-TR
T1610T-8G
Marking
Table 6. Ordering information
Package Weight
T1610T-8G D²PAK 1.6 g
Base qty.
1000
50
Delivery mode
Tape and reel
Tube
DS12532 - Rev 3 page 10/12
T1610T-8G
Revision history
Date
03-Apr-2018
17-Jul-2018
29-Oct-2020
2
3
Table 7. Document revision history
Version
1
Changes
Initial release.
Updated Table 2. Electrical characteristics (T j
= 25 °C, unless otherwise specified) .
Updated Table 5
and added Figure 13. Thermal resistance junction to ambient versus copper surface under tab .
Minor text changes.
DS12532 - Rev 3 page 11/12
T1610T-8G
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DS12532 - Rev 3 page 12/12
