STF3LN80K5
Nchannel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5
Power MOSFET in a TO-220FP package
Datasheet - production data
TO-220FP
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code V
DS
R
DS(on)
max
STF3LN80K5 800 V 3.25 Ω
Industry’s lowest R
DS(on)
x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
I
D
2 A
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code
STF3LN80K5
S(3)
AM15572v1_no_tab
Table 1: Device summary
Marking Package
3LN80K5 TO-220FP
Packing
Tube
July 2016 DocID027715 Rev 2
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
STF3LN80K5
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
2.1 Electrical characteristics (curves) ................................................ 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
TO-220FP package information ...................................................... 10
5 Revision history ............................................................................ 12
2/13 DocID027715 Rev 2
STF3LN80K5
1
Electrical ratings
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
I
V
GS
I
D
(1)
I
D
(1)
D
(2)
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
P
TOT
Total dissipation at T
C
= 25 °C
C
C
= 25 °C
= 100 °C
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; T
C
= 25 °C)
dv/dt (3)
Peak diode recovery voltage slope
dv/dt (4)
MOSFET dv/dt ruggedness
T stg
T j
Storage temperature range
Operating junction temperature range
Value
± 30
2
1.25
8
20
2500
4.5
50
- 55 to 150
Unit
V
A
A
A
W
V
V/ns
°C
Notes:
(1)
Limited by maximum junction temperature.
(2)
Pulse width limited by safe operating area.
(3)
I
SD
≤ 2 A, di/dt ≤ 100 A/µs; V
DSpeak
< V
(BR)DSS
, V
DD
= 640 V
(4)
V
DS
≤ 640 V.
Symbol
Table 3: Thermal data
Parameter Value Unit
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
6.25
62.5
Symbol
I
AR
E
AS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax
)
Single pulse avalanche energy (starting T j
= 25°C, I
D
= I
AR
; V
DD
= 50 V)
°C/W
°C/W
Value Unit
0.7 A
155 mJ
DocID027715 Rev 2 3/13
Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5: On /off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0 V
I
DSS
Zero gate voltage drain current
V
DS
= 800 V, V
GS
= 0 V
V
DS
= 800 V, V
GS
= 0 V,
T
C
= 125 °C (1)
I
GSS
Gate body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source on-resistance
V
GS
= ± 20 V, V
GS
= 0 V
V
DS
= V
GS
, I
D
= 100 µA
V
GS
= 10 V, I
D
= 1 A
STF3LN80K5
Min. Typ. Max. Unit
800
1
V
µA
50 µA
±10 µA
4 5 V
2.75 3.25 Ω
3
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
C
otr
(1)
C
oer
(2)
R
G
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time related
Equivalent capacitance energy related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
V
DS
= 0 to 640 V, V
GS
= 0 V f = 1 MHz, I
D
= 0 A
V
DD
= 640 V, I
D
= 2 A,
V
GS
= 10 V ( see Figure 15:
"Test circuit for gate charge behavior" )
Min. Typ. Max. Unit
-
-
102
11
-
- pF pF
- 0.1 - pF
-
-
-
-
-
-
20
7
12
2.63
0.91
1.53
-
-
-
-
-
- pF
Notes:
(1)
Time related is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to 80% V
DSS
(2)
Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss
when V
DS increases from 0 to 80% V
DSS pF
Ω nC nC nC
4/13 DocID027715 Rev 2
STF3LN80K5
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 7: Switching times
Test conditions
V
DD
= 400 V, I
D
= 1 A, R
G
= 4.7
Ω,
V
GS
= 10 V ( see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform" )
Symbol Parameter
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
I
Q rr
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current t rr
I
Q rr
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 8: Source drain diode
Test conditions
I
I
I
SD
SD
V
SD
V
= 2 A, V
DD
GS
= 0 V
= 2 A, di/dt = 100 A/µs,
= 60 V ( see
= 2 A, di/dt = 100 A/µs,
DD
= 60 V, T j
= 150 °C, (see
Figure 16: "Test circuit for inductive load switching and diode recovery times" )
Figure 16: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
6.2
7
30
26
-
-
-
- ns ns ns ns
Min. Typ. Max. Unit
- 2 A
- 8 A
-
- 210
1.5 V ns
- 0.8 µC
-
-
-
-
7.6
345
1.2
7.2
A ns
µC
A
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
Table 9: Gate-source Zener diode
Parameter Test conditions
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ± 1 mA, I
D
= 0 A
Min. Typ. Max. Unit
30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
5/13 DocID027715 Rev 2
Electrical characteristics
2.1 2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STF3LN80K5
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
6/13 DocID027715 Rev 2
STF3LN80K5
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Source-drain diode forward characteristics
Figure 10: Normalized gate threshold voltage vs temperature
Figure 11: Normalized on-resistance vs temperature
Figure 12: Normalized V(BR)DSS vs temperature
Figure 13: Maximum avalanche energy vs starting TJ
DocID027715 Rev 2 7/13
Test circuits
3 Test circuits
Figure 14: Test circuit for resistive load switching times
STF3LN80K5
Figure 15: Test circuit for gate charge behavior
V
DD
RL
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
100 Ω D.U.T.
V
G
AM01469v10
Figure 16: Test circuit for inductive load switching and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
8/13 DocID027715 Rev 2
STF3LN80K5
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID027715 Rev 2 9/13
Package information
4.1 TO-220FP package information
Figure 20: TO-220FP package outline
STF3LN80K5
10/13 DocID027715 Rev 2
STF3LN80K5
Dim.
G1
H
L2
L3
L4
L5
L6
L7
Dia
F
F1
F2
G
A
B
D
E
Table 10: TO-220FP package mechanical data mm
Min. Typ.
Package information
Max.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
28.6
9.8
2.9
15.9
9
3
30.6
10.6
3.6
16.4
9.3
3.2
DocID027715 Rev 2 11/13
Revision history
5
STF3LN80K5
Revision history
Date Revision
Table 11: Document revision history
Changes
13-May-2015
01-Jul-2016
1
2
Initial release
Updated title and features in cover page.
Updated Table 2: "Absolute maximum ratings"
and Section 2:
"Electrical characteristics" .
Added Section 2.1: "2.1 Electrical characteristics (curves)" .
Minor text changes.
12/13 DocID027715 Rev 2
STF3LN80K5
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DocID027715 Rev 2 13/13
