STF14N80K5,
STFI14N80K5
Nchannel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5
Power MOSFETs in TO-220FP and I²PAKFP packages
Datasheet - production data
TO-220FP
G(1)
Order code
STF14N80K5
STFI14N80K5
I
2
PAKFP (TO-281)
Figure 1: Internal schematic diagram
D(2)
S(3)
Features
Order code V
DS
R
DS(on)
max.
STF14N80K5
800 V
0.445 Ω
STFI14N80K5
Industry’s lowest R
DS(on)
x area
Industry’s best figure of merit (FoM)
Ultra-low gate charge
100% avalanche tested
Zener-protected
I
D
12 A
Applications
Switching applications
Description
These very high voltage N-channel Power
MO SFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
AM15572v1_no_tab
Table 1: Device summary
Marking Package Packing
14N80K5
TO-220FP
I²PAKFP (TO-281)
Tube
December 2015 DocID027725 Rev 2
This is information on a product in full production.
1/16 www.st.com
Contents
Contents
STF14N80K5, STFI14N80K5
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1
4.2
TO-220FP package information ...................................................... 11
I2PAKFP (TO-281) package information ......................................... 13
5 Revision history ............................................................................ 15
2/16 DocID027725 Rev 2
STF14N80K5, STFI14N80K5
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
GS
I
D
(1)
I
D
(1)
I
D
(2)
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
P
TOT
Total dissipation at T
C
= 25 °C
C
C
= 25 °C
= 100 °C
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; T
C
=25 °C)
dv/dt
(3)
Peak diode recovery voltage slope
dv/dt
(4)
MOSFET dv/dt ruggedness
T stg
T
J
Storage temperature
Operating junction temperature
Electrical ratings
Value
± 30
12
7.4
48
30
2500
4.5
50
- 55 to 150
Unit
V
A
A
A
W
V
V/ns
°C
Notes:
(1)
Limited by maximum junction temperature.
(2)
Pulse width limited by safe operating area.
(3)
I
SD
≤ 12 A, di/dt 100 A/μs; V
DS
peak < V
(BR)DSS,
V
DD
= 640 V
(4)
V
DS
≤ 640 V
Symbol
Table 3: Thermal data
Parameter Value Unit
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
4.2
62.5
Symbol
I
AR
E
AS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax
)
Single pulse avalanche energy (starting Tj = 25 °C, I
D
= I
AR
, V
DD
= 50 V)
°C/W
°C/W
Value Unit
4 A
270 mJ
DocID027725 Rev 2 3/16
Electrical characteristics
2 Electrical characteristics
STF14N80K5, STFI14N80K5
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 5: On/off-state
Test conditions
V
(BR)DSS
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
I
DSS
I
GSS
Zero gate voltage drain current
Gate body leakage current
V
GS(th)
Gate threshold voltage
V
GS
= 0 V, V
DS
= 800 V
V
GS
= 0 V, V
DS
= 800 V
T
C
= 125 °C
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 100 µA
R
DS(on)
Static drain-source on-resistance V
GS
= 10 V, I
D
= 6 A
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
C
o(tr)
(1)
C
o(er)
(2)
R g
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time related
Equivalent capacitance energy related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
V
DS
= 0 to 640 V,
V
GS
= 0 V f = 1 MHz , I
D
= 0 A
V
DD
= 640 V, I
D
= 12 A
V
GS
= 10 V
(see Figure 16: "Test circuit for gate charge behavior"
Min. Typ. Max. Unit
800 V
1 µA
50 µA
±10 µA
4 5 V
0.400 0.445
Ω
3
Min. Typ. Max. Unit
-
-
-
620
60
0.8
-
-
- pF pF pF
-
-
- 6.5
- 22
- 4.3
-
107
39
16.5
-
-
-
-
-
- pF pF
Ω nC nC nC
Notes:
(1)
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when V
DS increases from 0 to 80% V
DSS
(2)
Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when
V
DS
increases from 0 to 80% V
DSS
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 7: Switching times
Test conditions
V
DD
= 400 V, I
D
=6 A, R
G
= 4.7 Ω
V
GS
= 10 V
see ( Figure 15: "Test circuit for resistive load switching times" and
Figure 20: "Switching time waveform" )
Min. Typ. Max. Unit
-
-
-
-
12.5
8
33
10
-
-
-
- ns ns ns ns
4/16 DocID027725 Rev 2
STF14N80K5, STFI14N80K5
Symbol Parameter
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
RRM
Table 8: Source-drain diode
Test conditions
Reverse recovery current
I
I
SD
= 12 A, V
GS
= 0 V
SD
= 12 A, di/dt = 100
A/µs,V
DD
= 60 V
(see Figure 17: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
-
-
365
4.77
26
12
48
1.5
A
A
V ns
µC
A t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12 A, di/dt = 100 A/µs
V
DD
= 60 V, T j
= 150 °C
(see Figure 17: "Test circuit for inductive load switching and diode recovery times" )
-
-
-
485
5.85
24 ns
µC
A
Notes:
(1)
Pulse width limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Table 9: Gate-source Zener diode
Parameter Test conditions Min. Typ. Max. Unit
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ± 1mA, I
D
= 0 A 30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for additional external componentry.
DocID027725 Rev 2 5/16
Electrical characteristics
2.2 Electrical characteristics (curves)
Figure 2: Safe operating area
STF14N80K5, STFI14N80K5
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
6/16 DocID027725 Rev 2
STF14N80K5, STFI14N80K5
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 12: Maximum avalanche energy vs starting T
J
Figure 13: Source-drain diode forward characteristics
DocID027725 Rev 2 7/16
Electrical characteristics STF14N80K5, STFI14N80K5
Figure 14: Output capacitance stored energy
8/16 DocID027725 Rev 2
STF14N80K5, STFI14N80K5
3 Test circuits
Figure 15: Test circuit for resistive load switching times
Test circuits
Figure 16: Test circuit for gate charge behavior
Figure 17: Test circuit for inductive load switching and diode recovery times
Figure 18: Unclamped inductive load test circuit
Figure 19: Unclamped inductive waveform Figure 20: Switching time waveform
DocID027725 Rev 2 9/16
Package information
4 Package information
STF14N80K5, STFI14N80K5
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
10/16 DocID027725 Rev 2
STF14N80K5, STFI14N80K5
4.1 TO-220FP package information
Figure 21: TO-220FP package outline
Package information
DocID027725 Rev 2 11/16
Package information
Dim.
G1
H
L2
L3
L4
L5
L6
L7
Dia
F
F1
F2
G
A
B
D
E
STF14N80K5, STFI14N80K5
Table 10: TO-220FP package mechanical data mm
Min. Typ. Max.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
28.6
9.8
2.9
15.9
9
3
30.6
10.6
3.6
16.4
9.3
3.2
12/16 DocID027725 Rev 2
STF14N80K5, STFI14N80K5
4.2 I
2
PAKFP (TO-281) package information
Figure 22: I²PAKFP (TO-281) package outline
Package information
8291506 Re v. C
DocID027725 Rev 2 13/16
Package information
Dim.
H
L1
L2
L3
L4
L5
L6
E
F
F1
G
A
B
D
D1
STF14N80K5, STFI14N80K5
Table 11: I²PAKFP (TO-281) mechanical data mm
Min. Typ. Max.
4.95
10.00
21.00
13.20
10.55
2.70
0.85
7.50
4.40
2.50
2.50
0.65
0.45
0.75
7.60
10.40
23.00
14.10
10.85
3.20
1.25
7.70
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
14/16 DocID027725 Rev 2
STF14N80K5, STFI14N80K5
5
Revision history
Revision history
Date Revision
Table 12: Document revision history
Changes
06-Oct-2015
02-Dec-2015
1
2
First release.
Modified: Table 2: "Absolute maximum ratings" , Table 3: "Thermal data" , Table 4: "Avalanche characteristics" ,
Table 6: "Dynamic" ,
Table 7: "Switching times"
and Table 8: "Source-drain diode" .
Added: Section 3.1: "Electrical characteristics (curves)"
Minor text changes
DocID027725 Rev 2 15/16
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STF14N80K5, STFI14N80K5
STMicroelectronics NV and its subs idiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics
– All rights reserved
16/16 DocID027725 Rev 2
