STP35N65DM2
Nchannel 650 V, 0.093 Ω typ., 32 A MDmesh™ DM2
Power MOSFET in a TO-220 package
Datasheet - production data
TAB
TO-220
Order code
STP35N65DM2
1
2
3
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on) max.
I
D
STP35N65DM2
650
V
0.110 Ω
32
A
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
P
TOT
250
W
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Q rr
) and time (t rr
) combined with low R
DS(on)
, rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking Package Packing
35N65DM2 TO-220 Tube
December 2017 DocID030872 Rev 2
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
STP35N65DM2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
TO-220 type A package information ................................................ 10
5 Revision history ............................................................................ 12
2/13 DocID030872 Rev 2
STP35N65DM2
1 Electrical ratings
Symbol
V
GS
I
D
I
DM
(1)
P
TOT
dv/dt (2) dv/dt (3)
T stg
T j
Table 2: Absolute maximum ratings
Parameter
Gate-source voltage
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed)
Total dissipation at T case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
SD
≤ 32 A, di/dt=900 A/μs, V
DS
peak < V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
(3)
V
DS
≤ 520 V
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Symbol
I
AR
E
AS
(1)
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or non-repetitive
Single pulse avalanche energy
Notes:
(1)
Starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Electrical ratings
Value
±25
32
20
90
250
50
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Value
0.5
62.5
Unit
°C/W
Value
4
1150
Unit
A mJ
DocID030872 Rev 2 3/13
Electrical characteristics
2 Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5: Static
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1 mA
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 650 V
V
GS
= 0 V, V
DS
= 650 V,
T case
= 125 °C (1)
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source onresistance
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 16 A
STP35N65DM2
Min. Typ. Max. Unit
650 V
1
µA
100
±5 µA
4 5 V
0.093 0.110
Ω
3
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
C
oss eq.
(1)
R
G
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
V
V
DS
GS
= 100 V, f = 1 MHz,
= 0 V
Equivalent output capacitance
V
DS
= 0 to 520 V, V
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A
GS
= 0 V
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 520 V, I
D
= 32 A, V
GS
= 0
to 10 V (see Figure 15: "Test circuit for gate charge behavior" )
Min. Typ. Max. Unit
-
-
2540
115
-
- pF
-
-
-
-
-
-
2.5
204
4.2
56.3
12.7
27.6
-
-
-
-
-
- pF
Ω nC
Notes:
(1)
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to 80% V
DSS
.
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 7: Switching times
Test conditions
V
DD
= 325 V, I
D
= 16 A, R
G
= 4.7
Ω,
V
GS
= 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform" )
Min. Typ. Max. Unit
-
-
-
-
23.4
23
72
10.4
-
-
-
- ns
4/13 DocID030872 Rev 2
STP35N65DM2
Symbol Parameter
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
I
RRM t
Q rr rr
RRM
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 8: Source-drain diode
Test conditions
I
I
V
V
GS
SD
DD
= 0 V, I
SD
= 32 A
circuit for inductive load switching and diode recovery times"
SD
V
= 32 A, di/dt = 100 A/µs,
= 60 V (see Figure 16: "Test
= 32 A, di/dt = 100 A/µs,
DD
= 60 V, T j
= 150 °C (see
Figure 16: "Test circuit for inductive load switching and diode recovery times" )
)
Electrical characteristics
Min. Typ. Max. Unit
- 32 A
- 90 A
-
- 100
1.6 V ns
- 0.42 µC
-
-
-
-
8.4
205
1.8
17.6
A ns
µC
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%
DocID030872 Rev 2 5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STP35N65DM2
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
6/13 DocID030872 Rev 2
STP35N65DM2
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward characteristics
DocID030872 Rev 2 7/13
Test circuits
3 Test circuits
Figure 14: Test circuit for resistive load switching times
STP35N65DM2
Figure 15: Test circuit for gate charge behavior
8/13
Figure 16: Test circuit for inductive load switching and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
DocID030872 Rev 2
STP35N65DM2
4 Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID030872 Rev 2 9/13
Package information
4.1 TO-220 type A package information
Figure 20: TO-220 type A package outline
STP35N65DM2
10/13 DocID030872 Rev 2
STP35N65DM2
Dim. e1
F
H1
J1
L
L1
L20
D
D1
E e
A b b1 c
L30
øP
Q
Table 9: TO-220 type A package mechanical data
Package information mm
Min. Typ. Max.
4.40
0.61
1.14
0.48
15.25
1.27
4.60
0.88
1.55
0.70
15.75
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
3.75
2.65
16.40
28.90
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
DocID030872 Rev 2 11/13
Revision history
5
STP35N65DM2
Revision history
Table 10: Document revision history
Date
Revisi on
Changes
21-Jul-2017
6-Dec-2017
1
2
Initial release
Document status changed from preliminary to production data.
Updated Table 2: "Absolute maximum ratings"
and Table 8: "Sourcedrain diode" .
Updated Figure 2: "Safe operating area" .
Minor text changes.
12/13 DocID030872 Rev 2
STP35N65DM2
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