TO-247
1
2
3
TO-3P
1
2
3
Figure 1. Internal schematic diagram
STGW50HF65SD
STGWT50HF65SD
60 A, 650 V, very low drop IGBT
with soft and fast recovery diode
Datasheet
-
preliminary data
Features
Very low on-state voltage drop
Low switching off
High current capability
Very soft Ultrafast recovery antiparallel diode
Applications
PV inverter
UPS
Description
The very low drop IGBT is developed using an advanced planar technology, resulting in a device with extremely low on-state voltage and limited turn-off losses. The overall performance of this
IGBT makes it ideal for low frequency switches in mixed-frequency topologies for power factors
1.
Order code
STGW50HF65SD
STGWT50HF65SD
Table 1. Device summary
Marking Package
GW50HF65SD
GW50HF65SD
TO-247
TO-3P
Packaging
Tube
Tube
March 2013 DocID024411 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/13 www.st.com
13
Electrical ratings STGW50HF65SD, STGWT50HF65SD
Symbol
Table 2. Absolute maximum ratings
Parameter
V
CES
I
C
(1)
I
C
(1)
I
CL
(2)
I
CP
(3)
P
I
V
I
GE
TOT
F
FSM
Collector-emitter voltage (V
CE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
C
= 25 °C
Diode RMS forward current at T
C
= 25 °C
Surge non repetitive forward current t p
= 10 ms sinusoidal
T j
Operating junction temperature
1.
Calculated according to the iterative formula:
120
- 55 to 150
Value
650
110
60
60
130
±20
284
30
I
C
T
C
=
R thj – c
V
T
max
–
T
T j max
I
C
T
C
2.
Vclamp = 80% of V
CES
, T j
=150 °C, R
G
=10
, V
GE
=15 V
3.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Symbol
R thj-case
R thj-case
R thj-amb
Table 3. Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.44
1.25
50
Unit
°C/W
°C/W
°C/W
Unit
V
W
A
A
A
V
A
A
A
°C
2/13 DocID024411 Rev 1
STGW50HF65SD, STGWT50HF65SD Electrical characteristics
T
J
= 25°C unless otherwise specified
Symbol Parameter
Table 4. Static
Test conditions
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES g fs
Collector-emitter breakdown voltage
(V
GE
= 0)
Collector cut-off current
(V
GE
= 0)
I
C
= 1 mA
Collector-emitter saturation voltage
Gate threshold voltage
V
GE
= 15 V, I
C
= 30 A
V
GE
= 15 V, I
C
= 30 A,
T
J
= 125 °C
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= 650 V
V
CE
= 650 V, T
J
= 125 °C
Gate-emitter leakage current (V
CE
= 0)
V
GE
= ± 20 V
Forward transconductance V
CE
= 15 V
,
I
C
= 30 A
Min.
Typ.
Max.
Unit
650 V
1.15
1.45
V
3.5
1.05
5.7
50
500
V
V
µA
µA
25
± 100 nA
S
Symbol
C
C
C ies oes res
Q
Q
Q g ge gc
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Table 5. Dynamic
Test conditions
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
V
CE
= 480 V,
I
C
= 30 A,V
GE
= 15 V
Min.
Typ.
Max.
Unit
-
-
4300
400
100
200
27
90
-
pF pF pF nC nC nC
DocID024411 Rev 1 3/13
Electrical characteristics STGW50HF65SD, STGWT50HF65SD
Symbol
Table 6. Switching on/off (inductive load)
Parameter t d(on) t r
(di/dt) on t d(on) t r
(di/dt) on t r(
V off) t d(off) t f t r(
V off) t d(off) t f
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test conditions
V
CC
= 400 V, I
C
= 30 A
R
G
= 10
, V
GE
= 15 V,
(see
Figure 14 )
V
CC
= 400 V, I
C
= 30 A
R
G
= 10
, V
GE
= 15 V,
T
J
= 125 °C
(see Figure 14
)
V
CC
= 400 V, I
C
= 30 A
R
G
= 10
, V
GE
= 15 V,
(see
Figure 14 )
V
CC
= 400 V, I
C
= 30 A
R
G
= 10
, V
GE
= 15 V,
T
J
= 125 °C (see
Figure 14 )
Min.
Typ.
Max.
Unit
-
-
-
-
50
20
1280
47
22
1100
370
220
465
700
250
800
-
-
-
ns ns
A/µs ns ns
A/µs ns ns ns ns ns ns
Symbol
Table 7. Switching energy (inductive load)
Parameter Test conditions Min.
Typ.
Max.
Unit
E on
(1)
E off
(2)
E ts
E on
(1)
E off
(2)
E ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 400 V, I
C
= 30 A
R
G
= 10
, V
GE
= 15 V,
(see
Figure 14 )
V
CC
= 400 V, I
C
= 30 A
R
G
= 10
, V
GE
= 15 V,
T
J
= 125 °C
(see Figure 14 )
-
-
0.25
4.2
4.45
0.45
7.8
8.25
-
-
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in
Figure 14
. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25°C and 125°C).
2.
Turn-off losses include also the tail of the collector current.
mJ mJ mJ mJ mJ mJ
Symbol
V
F t rr
Q rr
I rrm t rr
Q rr
I rrm
Table 8. Collector-emitter diode
Parameter Test conditions
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
F
= 30 A
I
F
= 30 A, T
J
= 125 °C
I
F
= 30 A, V
R
= 50 V, di/dt = 100 A/µs
(see
Figure 17 )
I
F
= 30 A, V
R
= 50 V,
T
J
= 125 °C, di/dt = 100 A/µs
(see
Figure 17 )
Min.
Typ.
Max.
Unit
-
-
2.8
1.8
67
140
4
-
-
V
V ns nC
A
-
103
390
7
ns nC
A
4/13 DocID024411 Rev 1
STGW50HF65SD, STGWT50HF65SD Electrical characteristics
Figure 2. Output characteristics
AM0922v1
I
C
(A)
V
GE
=15V
V
GE
=11V
120
Figure 3. Transfer characteristics
AM09222v1
I
C
(A)
V
CE
=10V
120
100
80
60
40
20
0
0
V
GE
=10V
V
GE
=8V
100
80
60
40
20
0
0 1 2 3 V
CE
(V) 2 4 6 8 10 V
GE
(V)
Figure 4. Collector-emitter on voltage vs temperature
AM08877v1
V
CE(sat)
(V)
1.5
1.4
I
C
=60A
1.3
V
GE
=15V
1.2
1.1
1.0
0.9
0.8
-50 0 50 100
I
C
=30A
I
C
=15A
T
J
(°C)
Figure 5. Collector-emitter on voltage vs collector current
AM08878v1
V
CE(sat)
(V)
1.7
V
GE
=15V
1.5
1.3
T
J
=-50°C
1.1
0.9
0.7
0.5
0
T
J
=125°C
20
T
J
=25°C
40 60 80 I
C
(A)
Figure 6. Breakdown voltage vs temperature Figure 7. Gate threshold voltage vs temperature
AM08879v1 AM08880v1
V
(BR)CES
(V)
V
GE(th)
(norm)
1.10
I
C
= 1 mA
1.1
V
GE
=V
CE
I
C
=250µA
1.0
1.05
0.9
1.00
0.8
0.95
0.7
0.90
-50 0 50 100 T
J
(°C)
0.6
-50 0 50 100 T
J
(°C)
DocID024411 Rev 1 5/13
Electrical characteristics STGW50HF65SD, STGWT50HF65SD
Figure 8. Gate charge vs gate-emitter voltage
AM08881v1
V
GE
(V)
16
V
CC
=480V
I
C
=30A
Figure 9. Capacitance variations
AM08882v1
C
(pF)
Cies
1000
12
8 f=1MHz
V
GE
=0 Coes
100
4
Cres
0
0 40 80 120 160 200 Q g
(nC)
10
0.1
1 10 100 V
CE
(V)
Figure 10. Switching losses vs collector current Figure 11. Switching losses vs gate resistance
AM08883v1 AM08884v1
E (µJ) E (µJ)
E off
E off
V
CC
=400V, I
C
=30A
V
GE
=15V, T
J
=125°C
V
CC
=400V, R
G
=10
Ω
V
GE
=15V, T
J
=125°C
1000 1000
E on
E on
100
5 10 15 20 25 I
C
(A)
Figure 12. Switching losses vs temperature
AM08885v1
E (µJ)
E off
100
0 20 40 60 80 R
G
( Ω )
Figure 13. Emitter-collector diode characteristics
AM08887v1
I
F
(A)
T
J
=25°C typical values
30
V
CC
=400V, I
C
V
GE
=15V, R
G
=30A
=10
Ω
1000 20
T
J
=125°C typical values
E on
10
T
J
=125°C maximum values
100
25 50 75 100 T
J
(°C)
0
0 1 2 3 4 V
F
(V)
6/13 DocID024411 Rev 1
STGW50HF65SD, STGWT50HF65SD
3 Test circuits
Test circuits
Figure 14. Test circuit for inductive load switching
Figure 15. Gate charge test circuit
V
CE
Figure 16. Switching waveform
AM01504v1 AM01505v1
Figure 17. Diode recovery time waveform
90%
10% di/dt Q rr
V
G
I
F
90%
10% t a t rr t b
I C
Td(on)
Ton
Tr(Ion)
Tr(Voff)
Tcross
Td(off)
Toff
Tf
90%
10%
I
RRM
I
RRM t
V
F dv/dt
AM01506v1 AM01507v1
DocID024411 Rev 1 7/13
Package mechanical data
4 Package mechanical data
STGW50HF65SD, STGWT50HF65SD
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Dim.
c
D
E e
L
L1
L2
P
R
S
A
A1 b b1 b2
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
Table 9. TO-247 mechanical data mm.
Typ.
5.45
18.50
3.55
4.50
5.30
5.50
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
8/13 DocID024411 Rev 1
STGW50HF65SD, STGWT50HF65SD
Figure 18. TO-247 drawing
Package mechanical data
0075325_G
DocID024411 Rev 1 9/13
Package mechanical data
Dim
D1
E
E1
E2 e
L
L1
L2
øP
Q
Q1 b1 b2 c
D
A
A1
A2 b
STGW50HF65SD, STGWT50HF65SD
Table 10. TO-3P mechanical data mm.
Typ.
Min.
4.60
1.45
1.20
0.80
1.80
2.80
0.55
19.70
1.50
1.40
1
0.60
19.90
13.90
15.40
5.15
19.50
18.20
3.10
13.60
9.60
5.45
20
3.50
18.40
5
3.80
Max.
5
1.65
1.60
1.20
2.20
3.20
0.75
20.10
15.80
5.75
20.50
18.60
3.30
10/13 DocID024411 Rev 1
STGW50HF65SD, STGWT50HF65SD
Figure 19. TO-3P drawing
Package mechanical data
DocID024411 Rev 1
8045950_A
11/13
Revision history STGW50HF65SD, STGWT50HF65SD
Date
21-Mar-2013
Revision
Table 11. Document revision history
Changes
1 Initial release.
12/13 DocID024411 Rev 1
STGW50HF65SD, STGWT50HF65SD
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