STMicroelectronics STGW35NC120HD Datasheet
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2
1
TO-247 long leads
3
Figure 1. Internal schematic diagram
STGW35NC120HD
32 A, 1200 V
very fast IGBT
Datasheet
-
production data
•
•
•
•
•
•
Features
Low on-losses
Low on-voltage drop (V
CE(sat)
)
High current capability
IGBT co-packaged with ultrafast free-wheeling diode
Low gate charge
Ideal for soft switching application
•
•
•
Application
Induction heating
High frequency inverters
UPS
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Obsolete Product(s) - Obsolete Product(s)
Table 1. Device summary
Order code Marking Package Packaging
STGW35NC120HD GW35NC120HD TO-247 long leads Tube
December 2013
This is information on a product in full production.
DocID14378 Rev 3 1/13 www.st.com
Contents
Contents
STGW35NC120HD
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Obsolete Product(s) - Obsolete Product(s)
2/13 DocID14378 Rev 3
STGW35NC120HD Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter Value
V
CES
I
C
(1)
I
C
(1)
I
CL
(2)
I
CP
(3)
V
GE
P
TOT
I
F
I
FSM
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
C
= 25 °C
Diode RMS forward current at T
C
= 25 °C
Surge non repetitive forward current t p
= 10 ms sinusoidal
1200
60
32
135
135
±25
235
30
100
T j
Operating junction temperature
1.
Calculated according to the iterative formula:
I
C
(
T
)
C
=
R t h j
– c
×
V
T j
(
C E
( s a t m a x
) ( m a x
–
)
(
T
T
C j
( m a x
)
,
I
C
(
T
C
) )
2.
Vclamp = 80% of V
CES
, T j
=125 °C, R
G
=10
Ω
, V
GE
=15 V
3.
Pulse width limited by max. junction temperature allowed
–55 to 150
Symbol
Table 3. Thermal data
Parameter
R thj-case
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
R thj-amb
Thermal resistance junction-ambient
Value
0.53
1.5
50
Obsolete Product(s) - Obsolete Product(s)
Unit
°C/W
°C/W
°C/W
Unit
A
A
V
W
A
V
A
A
A
°C
DocID14378 Rev 3 3/13
13
Electrical characteristics STGW35NC120HD
(T j
=25 °C unless otherwise specified)
Symbol Parameter
Table 4. Static
Test conditions Min.
Typ.
Max.
Unit
V
(BR)CES
Collector-emitter breakdown voltage
(V
GE
= 0)
I
C
= 1 mA 1200
V
CE(sat)
V
I
I g
GE(th)
CES
GES fs
(1)
Collector-emitter saturation voltage
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
V
GE
= 15 V, I
C
= 20 A,
V
GE
= 15 V, I
C
= 20 A, T j
=125 °C
V
CE
= V
GE
, I
C
= 250 μ A
V
CE
=1200 V
V
CE
=1200 V, T j
=125 °C
3.75
Gate-emitter leakage current (V
CE
= 0)
V
GE
=± 20 V
Forward transconductance V
CE
= 25 V
,
I
C
= 20 A
1.
Pulse duration = 300 μ s, duty cycle 1.5%
2.2
2.0
14
2.75
5.75
500
10
μ
V
V
V
V
A mA
± 100 nA
S
Symbol
C ies
C oes
C
Q
Q
Q res g ge gc
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Table 5. Dynamic
Test conditions
V
CE
= 25 V, f = 1 MHz, V
GE
=0
Min.
Typ. Max.
Unit
-
2510 -
175 pF pF
30 pF
V
CE
= 960 V,
I
C
= 20 A,V
GE
=15 V
-
-
110
16
49 -
-
nC nC nC
Obsolete Product(s) - Obsolete Product(s)
4/13 DocID14378 Rev 3
STGW35NC120HD Electrical characteristics
Symbol
Table 6. Switching on/off (inductive load)
Parameter t d(on) t r
Turn-on delay time
(di/dt)on t d(on) t r
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
(di/dt)on t r(Voff) t d(off) t f t r(Voff) t d(off) t f
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test conditions
V
CC
= 960 V, I
C
= 20 A
R
G
= 10
Ω
, V
GE
= 15 V,
V
CC
= 960 V, I
C
= 20 A
R
G
= 10
Ω
, V
GE
= 15 V,
T j
V
CC
= 960 V, I
C
= 20 A
R
G
= 10
Ω
, V
GE
= 15 V,
V
CC
= 960 V, I
C
= 20 A
R
G
= 10
Ω
, V
GE
= 15 V,
T j
Min.
Typ.
Max.
Unit
29
11
1820
27
14
1580
90
275
312
150
336
592
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns ns
A/ μ s ns ns
A/ μ s ns ns ns ns ns ns
Symbol
Eon
(1)
E off
(2)
E ts
Eon
(1)
E off
(2)
E ts
Table 7. Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
R
G
V
R
T
CC
G j
Test conditions
= 960 V, I
C
= 10
Ω
, V
GE
= 960 V, I
= 10
Ω
, V
=125 °C
C
GE
= 20 A
= 15 V,
= 20 A
= 15 V,
Min.
Typ.
Max.
Unit
-
-
-
1660
4438
6098
3015
6900
9915 -
-
-
μ
μ
μ
μ
μ
μ
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25 °C and 125 °C)
2.
Turn-off losses include also the tail of the collector current
J
J
J
J
J
J
Symbol
V
F t rr
Q rr
I rrm
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
F
F
Test conditions
= 20 A
= 20 A, T
C
= 125 °C
I
F
= 20 A, V
R
= 27 V,
T j
=125 °C, di/dt = 100 A/ μ s
Min.
Typ.
Max.
Unit
2.5
-
-
-
-
1.9
1.7
152
722
9
-
-
-
V
V ns nC
A
DocID14378 Rev 3 5/13
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Electrical characteristics STGW35NC120HD
Figure 2. Output characteristics Figure 3. Transfer characteristics
Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs. temperature
Figure 6. Gate charge vs. gate-source voltage Figure 7. Capacitance variations
Obsolete Product(s) - Obsolete Product(s)
6/13 DocID14378 Rev 3
STGW35NC120HD Electrical characteristics
Figure 8. Normalized gate threshold voltage vs. temperature
Figure 9. Collector-emitter on voltage vs. collector current
Figure 10. Normalized breakdown voltage vs. temperature
Figure 11. Switching losses vs. temperature
Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. collector current
Obsolete Product(s) - Obsolete Product(s)
DocID14378 Rev 3 7/13
13
Electrical characteristics
Figure 14. Thermal Impedance
STGW35NC120HD
Figure 15. Reverse biased SOA
Figure 16. Forward voltage drop vs. forward current
100
I
FM
(A)
90
80
70
60
50
40
30
20
10
0
0.0
0.5
(maximum values)
1.0
1.5
(typical values)
2.0
V
FM
(V)
2.5
(maximum values)
3.0
3.5
4.0
4.5
Obsolete Product(s) - Obsolete Product(s)
8/13 DocID14378 Rev 3
STGW35NC120HD
3 Test circuits
Test circuits
Figure 17. Test circuit for inductive load switching
Figure 18. Gate charge test circuit
V
CE
Figure 19. Switching waveform
AM01504v1 AM01505v1
Figure 20. Diode recovery time waveform di/dt Q rr
V
G
I C
Td(on)
Ton
Tr(Ion)
90%
10%
Tr(Voff)
Tcro ss
Td(off)
Toff
Tf
90%
10%
90%
10%
I
F
I
RRM t a t rr t b
I
RRM t
V
F di/dt
AM01506v1 AM01507v1
Obsolete Product(s) - Obsolete Product(s)
DocID14378 Rev 3 9/13
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STGW35NC120HD Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Dim.
Table 9. TO-247 long leads mechanical data mm
Min.
Typ.
Max.
L4
L5
M
V
L
L1
L2
L3
V1
V3
F1
F2
G
H
E
F
A
D
15.77
20.82
4.16
5.49
20.05
3.68
6.04
2.25
4.90
1.85
0.55
1.07
1.90
2.87
10.90 BSC
10°
3°
20°
16.02
21.07
4.47
5.74
20.30
3.93
6.29
2.55
5.15
2.10
0.67
1.32
2.38
3.38
Dia.
3.55
3.66
Obsolete Product(s) - Obsolete Product(s)
10/13 DocID14378 Rev 3
STGW35NC120HD
Figure 21.
TO-247 long leads drawing
Package mechanical data
DocID14378 Rev 3 11/13
13
Revision history STGW35NC120HD
Date
25-Jan-2008
07-May-2009
12-Dec-2013
Revision
Table 10. Document revision history
Changes
1
2
3
First issue.
Section 4: Package mechanical data
Section 4: Package mechanical data
.
Minor text changes.
Obsolete Product(s) - Obsolete Product(s)
12/13 DocID14378 Rev 3
STGW35NC120HD
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