STGW20NC60VD
30 A, 600 V, very fast IGBT
Features
■
High current capability
■
High frequency operation up to 50 KHz
■
Very soft ultra fast recovery antiparallel diode
Description
This IGBT utilizes the advanced Power MESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
1
2
3
TO-247
Applications
■
High frequency inverters, UPS
■
Motor drive
■
SMPS and PFC in both hard switch and
resonant topologies
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
STGW20NC60VD
GW20NC60VD
TO-247
Tube
March 2010
Doc ID 9983 Rev 5
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www.st.com
14
Contents
STGW20NC60VD
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 7
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0)
600
V
IC(1)
Continuous collector current at Tc= 25°C
60
A
IC (1)
Continuous collector current at Tc= 100°C
30
A
ICP (2)
Pulsed collector current
150
A
ICL(3)
Turn-off latching current
100
A
VGE
Gate-emitter voltage
± 20
V
Diode RMS forward current at Tc=25°C
30
A
IFSM
Surge not repetitive forward current
tp = 10 ms sinusoidal
120
A
PTOT
Total dissipation at TC = 25°C
200
W
– 55 to 150
°C
IF
Tj
Tstg
Operating junction temperature
Storage temperature
1. Calculated according to the iterative formula:
T j ( max ) – T C
I C ( T C ) = --------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) )
2. Pulse width limited by maximum junction temperature and turn-off within RBSOA.
3. Vclamp = 80 % VCES, TJ = 150 °C, RG = 10 Ω, VGE = 15 V.
Table 3.
Symbol
Rthj-case
Rthj-amb
Thermal data
Parameter
Value
Unit
Thermal resistance junction-case IGBT
0.63
°C/W
Thermal resistance junction-case diode
1.5
°C/W
Thermal resistance junction-ambient
50
°C/W
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Electrical characteristics
2
STGW20NC60VD
Electrical characteristics
(Tj =25°C unless otherwise specified)
Table 4.
Symbol
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
IC = 1 mA
voltage (VGE = 0)
VCE(sat)
Collector-emitter saturation
voltage
VGE=15 V, IC=20 A
VGE=15 V, IC=20 A,Tj=125 °C
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 250 µA
ICES
Collector-cut-off current
(VGE = 0)
IGES
gfs
Table 5.
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
4/14
Static
Min.
Typ.
Max. Unit
600
V
1.8
1.7
2.5
V
V
5.75
V
VCE = 600 V
VCE=600 V, Tj= 125 °C
250
1
µA
mA
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20V
±100
nA
Forward transconductance
VCE = 15 V, IC= 20 A
3.75
15
S
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
Min.
Typ.
VCE = 25V, f = 1 MHz, VGE= 0
-
2200
225
50
-
100
16
45
VCE = 390V, IC = 20A,
VGE = 15V,
(see Figure 18)
Doc ID 9983 Rev 5
Max
Unit
pF
pF
pF
140
nC
nC
nC
STGW20NC60VD
Table 6.
Symbol
td(on)
tr
(di/dt)onf
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 7.
Symbol
Electrical characteristics
Switching on/off (inductive load)
Parameter
Test conditions
Turn-on delay time
Current rise time
Turn-on current slope
VCC=390 V, IC= 20 A,
RG=3.3 Ω, VGE=15V
Min.
Typ.
Max.
Unit
-
31
11
1600
-
ns
ns
A/µs
-
31
11.5
1500
-
ns
ns
A/µs
-
28
100
75
-
ns
ns
ns
-
66
150
130
-
ns
ns
ns
Min
Typ.
Max
Unit
-
220
330
550
300
450
750
µJ
µJ
µJ
-
450
770
1220
(see Figure 17)
VCC=390 V, IC= 20 A,
Turn-on delay time
Current rise time
Turn-on current slope
RG=3.3 Ω, VGE=15 V
Tj=125°C (see Figure 17)
VCC=390 V, IC= 20 A,
Off voltage rise time
Turn-off delay time
Current fall time
RG=3.3 Ω, VGE=15 V
(see Figure 17)
VCC=390 V, IC= 20 A,
Off voltage rise time
Turn-off delay time
Current fall time
RG=3.3 Ω, VGE=15 V
Tj=125°C (see Figure 17)
Switching energy (inductive load)
Parameter
Test conditions
Eon (1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Eon (1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC=390 V, IC= 20 A,
RG=3.3 Ω, VGE=15 V,
(see Figure 19)
VCC=390 V, IC= 20 A,
RG=3.3 Ω, VGE=15 V,
Tj= 125°C
(see Figure 19)
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 19. Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C).
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Electrical characteristics
Table 8.
Symbol
Collector-emitter diode
Parameter
Test conditions
IF = 20 A
VF
Forward on-voltage
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Qrr
Irrm
trr
Qrr
Irrm
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STGW20NC60VD
IF = 20 A, Tj = 125°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Min
Typ.
Max
Unit
-
2
1.6
-
V
V
-
44
66
3
-
ns
nC
A
-
88
237
5.4
-
ns
nC
A
IF = 20 A, VR = 40 V,
Tj = 25°C, di/dt =100 A/µs
(see Figure 20)
IF = 2 0A, VR = 40 V,
Tj = 125°C,
di/dt =100 A/µs
(see Figure 20)
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STGW20NC60VD
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Transfer characteristics
Figure 4.
Transconductance
Figure 5.
Collector-emitter on voltage vs
temperature
Figure 6.
Collector-emitter on voltage vs
collector current
Figure 7.
Normalized gate threshold vs
temperature
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Electrical characteristics
Figure 8.
STGW20NC60VD
Normalized breakdown voltage vs
temperature
Figure 10. Capacitance variations
Figure 9.
Gate charge vs gate-emitter voltage
Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current
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Electrical characteristics
Figure 14. Thermal impedance
Figure 15. Turn-off SOA
Figure 16. Emitter-collector diode
characteristics
!-V
) &!
4* #
MAXIMUMVALUES
4* #
TYPICALVALUES
4* #
MAXIMUMVALUES
6&6
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Test circuits
3
STGW20NC60VD
Test circuits
Figure 17. Test circuit for inductive load
switching
Figure 18. Gate charge test circuit
Figure 19. Switching waveforms
Figure 20. Diode recovery times waveform
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4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
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Package mechanical data
STGW20NC60VD
TO-247 mechanical data
Dim.
mm.
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.45
L
14.20
14.80
L1
3.70
4.30
L2
18.50
øP
3.55
øR
4.50
S
12/14
Typ.
3.65
5.50
5.50
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5
Revision history
Revision history
Table 9.
Revision history
Date
12-Jul-2004
09-Mar-2010
Revision
Changes
4
Stylesheet updated.
Added switching losses maximum values inTable 7: Switching
energy (inductive load).
Inserted Figure 20: Diode recovery times waveform.
5
Inserted IFSM parameter on Table 2: Absolute maximum
ratings.
Updated Figure 16: Emitter-collector diode characteristics and
package mechanical data.
Minor text changes to improve readability.
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STGW20NC60VD
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