STB34N50DM2AG
Automotive-grade N-channel 500 V, 0.10
Ω typ., 26 A
MDmesh™ DM2 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
1
3
D2PAK
Figure 1: Internal schematic diagram
Order code
STB34N50DM2AG
Features
Order code V
DS
R
DS(on) max.
I
D
P
TOT
STB34N50DM2AG 500 V 0.12
Ω
26 A 190 W
Designed for automotive applications and
AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Q rr
) and time (t rr
) combined with low R
DS(on)
, rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking Package Packing
34N50DM2 D²PAK Tape and reel
August 2015 DocID028248 Rev 1
This is information on a product in full production.
1/15 www.st.com
Contents
Contents
STB34N50DM2AG
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
4.2
D²PAK (TO-263) type A package information ................................... 9
D²PAK packing information ............................................................. 12
5 Revision history ............................................................................ 14
2/15 DocID028248 Rev 1
STB34N50DM2AG
1 Electrical ratings
Symbol
V
GS
I
D
I
DM
(1)
P
TOT
dv/dt (2) dv/dt (3)
T stg
T j
Table 2: Absolute maximum ratings
Parameter
Gate-source voltage
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed)
Total dissipation at T case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature
Operating junction temperature
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
SD
≤ 26 A, di/dt=800 A/μs; V
DS
peak < V
(BR)DSS
,V
DD
= 80% V
(BR)DSS
.
(3)
V
DS
≤ 400 V.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R
thj-pcb
(1)
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1)
When mounted on a 1-inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics
Parameter Symbol
I
AR
(1)
E
AS
(2)
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Notes:
(1) pulse width limited by T jmax
.
(2)
starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Electrical ratings
Value
±25
26
16
104
190
50
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Value
0.65
30
Unit
°C/W
Value
5
700
Unit
A mJ
DocID028248 Rev 1 3/15
Electrical characteristics
2 Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5: Static
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1 mA
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 500 V
V
GS
= 0 V, V
DS
= 500 V,
T case
= 125 °C
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source onresistance
Symbol
C iss
C oss
C rss
C
oss eq.
(1)
R
G
Q g
Q gs
Q gd
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 12.5 A
Parameter
Table 6: Dynamic
Test conditions
Input capacitance
Output capacitance V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
Reverse transfer capacitance
Equivalent output capacitance
V
DS
= 0 to 400 V, V
GS
= 0 V
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480 V, I
V
GS
= 10 V (see Figure 15:
"Test circuit for gate charge behavior" )
D
= 25 A,
-
-
-
-
-
STB34N50DM2AG
Min. Typ. Max. Unit
500 V
10
µA
100
±5 µA
4 5 V
0.10 0.12
Ω
3
Min. Typ. Max. Unit
-
-
1850
100
-
- pF
- 2.7 -
160
4.5
44
10.5
19
-
-
-
-
- pF
Ω nC
Notes:
(1)
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to 80% V
DSS
.
Symbol Parameter
Table 7: Switching times
Test conditions Min. Typ. Max. Unit t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
V
DD
= 250 V, I
D
= 12.5 A
R
G
= 4.7 Ω, V
GS
= 10 V (see
Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform" )
-
-
-
-
19.5
11.5
65.5
8.1
-
-
-
- ns
4/15 DocID028248 Rev 1
STB34N50DM2AG
Symbol
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
I
RRM t
Q rr rr
RRM
Parameter
Reverse recovery current
Reverse recovery time
Table 8: Source-drain diode
Test conditions
Reverse recovery charge
Reverse recovery current
V
GS
= 0 V, I
SD
= 26 A
I
SD
= 25 A, di/dt = 100 A/µs,
V
DD
= 100 V (see Figure 16:
"Test circuit for inductive load switching and diode recovery times" )
I
SD
= 25 A, di/dt = 100 A/µs,
V
DD
= 100 V, T j
= 150 °C (see
Figure 16: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
- 26 A
- 104 A
-
-
-
110
0.48
1.6 V ns
µC
-
-
-
-
8.8
190
1.52
16
A ns
µC
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
Table 9: Gate-source Zener diode
Parameter Test conditions Min. Typ. Max. Unit
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ±250 µA, I
D
= 0 A ±30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
DocID028248 Rev 1 5/15
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STB34N50DM2AG
Figure 3: Thermal impedance
K
δ=0.5
0.2
0.1
10 -1
0.05
0.02
Zth= K*Rthj-c
δ= tp/ Ƭ
0.01
Single pulse
10 -2
10 -5 10 -4 10 -3 10 -2 tp
Ƭ
10 -1 t
P
(s)
Figure 4: Output characteristics Figure 5: Transfer characteristics
6/15
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
DocID028248 Rev 1
STB34N50DM2AG
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward characteristics
DocID028248 Rev 1 7/15
Test circuits
3 Test circuits
Figure 14: Test circuit for resistive load switching times
STB34N50DM2AG
Figure 15: Test circuit for gate charge behavior
Figure 16: Test circuit for inductive load switching and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform
8/15 DocID028248 Rev 1
STB34N50DM2AG
4
4.1
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
D²PAK (TO-263) type A package information
Figure 20: D²PAK (TO-263) type A package outline
DocID028248 Rev 1
0079457_A_rev22
9/15
Package information
Dim.
D2
E
E1
E2 e e1
H c c2
D
D1
A
A1 b b2
J1
L
L1
L2
R
V2
STB34N50DM2AG
Table 10: D²PAK (TO-263) type A package mechanical data mm
Min. Typ. Max.
4.88
15
2.49
2.29
1.27
1.30
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10
8.50
6.85
0.4
7.75
1.30
8.70
7.05
2.54
5.28
15.85
2.69
2.79
1.40
1.75
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.90
7.25
0° 8°
10/15 DocID028248 Rev 1
STB34N50DM2AG Package information
Figure 21: D²PAK (TO-263) recommended footprint (dimensions are in mm)
DocID028248 Rev 1 11/15
Package information
4.2 D²PAK packing information
Figure 22: Tape
STB34N50DM2AG
12/15 DocID028248 Rev 1
STB34N50DM2AG
Figure 23: Reel
Package information
Dim.
K0
P0
P1
P2
R
T
W
A0
B0
D
D1
E
F
Table 11: D²PAK tape and reel mechanical data
Tape Reel mm
Dim.
Min.
4.8
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
1.65
11.4
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
0.35
24.3
A
B
C
D
G
N
T
Base qty
Bulk qty
Min.
1.5
12.8
20.2
24.4
100 mm
Max.
330
13.2
26.4
30.4
1000
1000
DocID028248 Rev 1 13/15
Revision history
5
STB34N50DM2AG
Revision history
Date
19-Aug-2015
Table 12: Document revision history
Revision
1
Changes
Initial version
14/15 DocID028248 Rev 1
STB34N50DM2AG
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DocID028248 Rev 1 15/15
