STW3N170, STWA3N170
Nchannel 1700 V, 7 Ω typ., 2.6 A PowerMESH™
Power MOSFETs in TO-247 and TO-247 long leads packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max. I
D
P
TOT
STW3N170
1700 V 13 Ω 2.6 A 160 W
STWA3N170
Intrinsic capacitances and Q g
minimized
High speed switching
100% avalanche tested
Applications
Switching applications
Description
This Power MOSFET is designed using the
STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Order code
STW3N170
STWA3N170
Table 1: Device summary
Marking Package
3N170
TO-247
TO-247 long leads
Packing
Tube
September 2015 DocID028045 Rev 1
This is information on a product in full production.
1/14 www.st.com
Contents
Contents
STW3N170, STWA3N170
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
4.2
TO-247 package information ............................................................. 9
TO-247 long leads package information ......................................... 11
5 Revision history ............................................................................ 13
2/14 DocID028045 Rev 1
STW3N170, STWA3N170
1 Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
V
GS
I
D
I
DM
(1)
P
TOT
I
AR
E
AS
(2)
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed)
Total dissipation at T case
= 25 °C
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Storage temperature
Operating junction temperature
1700
±30
2.6
1.6
10.4
160
0.8
2
-55 to 150
V
V
A
A
W
A mJ
°C
Notes:
(1)
Pulse width limited by T jmax
.
(2)
starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Table 3: Thermal data
Symbol Parameter Value Unit
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
0.78
50
°C/W
DocID028045 Rev 1 3/14
Electrical characteristics
2 Electrical characteristics
STW3N170, STWA3N170
(T case
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: Static
Test conditions
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1 mA
Zero gate voltage drain current
V
GS
= 0 V,
V
DS
= 1700 V
V
GS
= 0 V,
V
DS
= 1700 V,
T case
= 125 °C
Gate-body leakage current
V
V
DS
GS
= 0 V,
= ±30 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source onresistance
V
GS
= 10 V, I
D
= 1.3 A
Symbol Parameter
Table 5: Dynamic
Test conditions
Min. Typ. Max. Unit
1700
3 4
7
10
500
±100
5
13
V
µA nA
V
Ω
C iss
C oss
C rss
R
G
Q g
Q gs
Q gd
Input capacitance
Output capacitance V
DS
= 100 V, f = 1 MHz, V
GS
= 0 V
Reverse transfer capacitance
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 1360 V,
I
D
= 2.6 A, V
GS
= 10 V
(see Figure 15: "Test circuit for gate charge behavior" )
-
-
-
-
-
-
-
1100
50
7
3.6
44
7
25
-
-
-
-
-
-
- pF
Ω nC
Symbol Parameter
Table 6: Switching times
Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 850 V,
I
D
= 1.3 A R
G
= 4.7 Ω,
V
GS
= 10 V (see
Figure 14: "Test circuit for resistive load switching times" and
Figure 19: "Switching time waveform" )
Min. Typ. Max. Unit
-
-
-
-
25
9
51
53
-
-
-
- ns
4/14 DocID028045 Rev 1
STW3N170, STWA3N170 Electrical characteristics
Table 7: Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
T j
= 25 °C - 2.6 A
I
SDM
Source-drain current
Source-drain current
(pulsed)
T j
= 25 °C - 10.4 A
V
SD
(1)
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V
GS
= 0 V,
I
SD
= 2.6 A
I
SD
= 2.6 A, di/dt = 100 A/µs,
V
DD
= 60 V (see
Figure 16: "Test circuit for inductive load switching and diode recovery times" )
I
SD
= 2.6 A, di/dt = 100 A/µs,
V
DD
= 60 V,
T j
= 150 °C (see
Figure 16: "Test circuit for inductive load switching and diode recovery times" )
-
-
-
-
-
-
-
1.58
6
7.9
2.12
8.8
8.3
1.5 V
µs
µC
A
µs
µC
A
Notes:
(1)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028045 Rev 1 5/14
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STW3N170, STWA3N170
K
Figure 3: Thermal impedance
GC18460
10 -1
10
-2
Figure 4: Output characteristics
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1 t p
(s)
Figure 5: Transfer characteristics
6/14
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
DocID028045 Rev 1
STW3N170, STWA3N170
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward characteristics
DocID028045 Rev 1 7/14
Test circuits
3 Test circuits
Figure 14: Test circuit for resistive load switching times
STW3N170, STWA3N170
Figure 15: Test circuit for gate charge behavior
Figure 16: Test circuit for inductive load switching and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform
8/14 DocID028045 Rev 1
STW3N170, STWA3N170
4
4.1
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
TO-247 package information
Figure 20: TO-247 package outline
DocID028045 Rev 1 9/14
Package information
Dim. e
L
L1
L2
ØP
ØR
S b2 c
D
E
A
A1 b b1
STW3N170, STWA3N170
Table 8: TO-247 package mechanical data mm.
Min. Typ. Max.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
5.45
18.50
5.50
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
10/14 DocID028045 Rev 1
STW3N170, STWA3N170
4.2 TO-247 long leads package information
Figure 21: TO-247 long leads package outline
Package information
DocID028045 Rev 1 11/14
Package information
Dim.
E
E2
E3 e
L
L1
P
Q
S b2 b3 c
D
A
A1
A2 b
STW3N170, STWA3N170
Table 9: TO-247 long leads package mechanical data mm.
Min. Typ. Max.
4.90
2.31
1.90
1.16
0.59
20.90
15.70
4.90
2.40
5.34
19.80
3.50
5.60
6.05
5.00
2.41
2.00
21.00
15.80
5.00
2.50
5.44
19.92
3.60
6.15
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
12/14 DocID028045 Rev 1
STW3N170, STWA3N170
5
Revision history
Revision history
Date
14-Sep-2015
Table 10: Document revision history
Revision
1
Changes
First release.
DocID028045 Rev 1 13/14
STW3N170, STWA3N170
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14/14 DocID028045 Rev 1
