STB13N80K5, STF13N80K5,
STP13N80K5, STW13N80K5
Nchannel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5
Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247
Datasheet - production data
TAB
TAB
Order code
STB13N80K5
STF13N80K5
STP13N80K5
STW13N80K5
3
2
1
TO-220FP
TO-220
1
2
3
TO-247
1
2
3
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max. I
D
P
TOT
STB13N80K5 190 W
STF13N80K5
800 V 0.45 Ω 12 A
STP13N80K5
STW13N80K5
Industry’s lowest R
DS(on)
x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
35 W
190 W
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Table 1: Device summary
Marking Package Packing
Tape and reel
13N80K5
D²PAK
TO-220FP
TO-220
TO-247
Tube
September 2017 DocID024348 Rev 4
This is information on a product in full production.
1/23 www.st.com
Contents STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ................................................................................... 10
4 Package information ..................................................................... 11
4.1
4.2
4.3
4.4
4.5
D²PAK (TO-263) type A package information ................................. 11
TO-220FP package information ...................................................... 14
TO-220 type A packing information ................................................. 16
TO-247 package information ........................................................... 18
D²PAK type A packing information .................................................. 20
5 Revision history ............................................................................ 22
2/23 DocID024348 Rev 4
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter
V
GS
I
D
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
I
D
Drain current (continuous) at T
C
= 100 °C
I
DM
(2)
Drain current (pulsed)
P
TOT
Total dissipation at T
C
= 25 °C
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat-sink
(t = 1 s, T
C
= 25 °C)
dv/dt (3)
Peak diode recovery voltage slope
dv/dt (4)
MOSFET dv/dt ruggedness
T j
T stg
Operating junction temperature range
Storage temperature range
Value
D²PAK, TO-220,
TO-247
±30
TO-220FP
12
7.6
48
190
12 (1)
7.6 (1)
48 (1)
35
4.5
50
-55 to 150
2500
Unit
V
V/ns
°C
V
A
A
A
W
Notes:
(1)
Limited by package.
(2)
Pulse width limited by safe operating area.
(3)
I
SD
≤ 12 A, di/dt =100 A/μs; V
DS
peak < V
(BR)DSS
.
(4)
V
DS
≤ 640 V.
Table 3: Thermal data
Symbol Parameter
Value
D²PAK TO-220 TO-220FP TO-247
0.66 3.57 R thj-case
Thermal resistance junction-case
R thj-amb
Thermal resistance junction-ambient
R
thj-pcb
(1)
Thermal resistance junction-pcb 30
62.5
Unit
0.66 °C/W
50 °C/W
°C/W
Notes:
(1)
When mounted on FR-4 board of 1 inch², 2 oz Cu.
Symbol
Table 4: Avalanche characteristics
Parameter
I
AR
E
AS
Avalanche current, repetitive or not repetitive
(pulse width limited by T jmax
)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
4
148
Unit
A mJ
DocID024348 Rev 4 3/23
Electrical characteristics
2
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 5: On/off-state
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1 mA
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 800 V
V
GS
= 0 V, V
DS
= 800 V,
T
C
= 125 ° C (1)
I
GSS
Gate body leakage current V
DS
= 0 V, V
GS
= ±20 V
V
GS(th)
Gate threshold voltage V
DD
= V
GS
, I
D
= 100 µA
R
DS(on)
Static drain-source onresistance
V
GS
= 10 V, I
D
= 6 A
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
C
o(tr)
(1)
C
o(er)
(2)
R g
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time related
Equivalent capacitance energy related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
V
GS
= 0 V, V
DS
= 0 to 640 V f = 1 MHz, I
D
= 0 A
V
DD
= 640 V, I
D
= 2.5 A
V
GS
= 0 to 10 V
(see Figure 22: "Test circuit for gate charge behavior" )
Min. Typ. Max. Unit
800 V
1 µA
50 µA
4
±10 µA
5 V
0.37 0.45 Ω
3
Min. Typ. Max. Unit
-
-
870
50
-
- pF pF
- 2 - pF
-
-
-
-
-
-
110
43
5
29
7
18
-
-
-
-
-
- pF pF
Ω nC nC nC
Notes:
(1)
C o(tr)
is a constant capacitance value that gives the same charging time as C oss
while V
DS
is rising from 0 to
80% V
DSS
.
(2)
C o(er)
is a constant capacitance value that gives the same stored energy as Coss while V
DS
is rising from 0 to
80% V
DSS.
4/23 DocID024348 Rev 4
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Table 7: Switching times
Symbol Parameter Test conditions t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
V
DD
= 400 V, I
D
= 6 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 21: "Test circuit for resistive load switching times" and Figure 26:
"Switching time waveform" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
16
16
42
-
-
- ns ns ns
- 16 - ns
Symbol Parameter
I
SD
Source-drain current
Table 8: Source-drain diode
Test conditions
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12 A, V
GS
= 0 V
I
SD
= 12 A, di/dt = 100 A/μs,
V
DD
= 60 V
(see Figure 23: "Test circuit for inductive load switching and diode recovery times" )
I
SD
= 12 A, di/dt = 100 A/ μs,
V
DD
= 60 V, T j
= 150 °C
(see Figure 23: "Test circuit for inductive load switching and diode recovery times" )
Min. Typ. Max. Unit
- 14 A
- 56 A
- 1.5 V
-
-
406
5.7 ns
μC
-
-
-
-
28
600
7.9
26
A ns
μC
A
Notes:
(1)
Pulse width limited by safe operating area
(2) Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Symbol
Table 9: Gate-source Zener diode
Parameter Test conditions Min. Typ. Max. Unit
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ±1 mA, I
D
= 0 A ±30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
DocID024348 Rev 4 5/23
Electrical characteristics
2.1
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Electrical characteristics (curves)
Figure 2: Safe operating area for D²PAK Figure 3: Thermal impedance for D²PAK
Figure 4: Safe operating area for TO-220FP Figure 5: Thermal impedance for TO-220FP
Figure 6: Safe operating area for TO-220
Figure 7: Thermal impedance for TO-220
6/23 DocID024348 Rev 4
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Figure 8: Safe operating area for TO-247
Electrical characteristics
Figure 9: Thermal impedance for TO-247
Figure 10: Output characteristics Figure 11: Transfer characteristics
Figure 12: Gate charge vs gate-source voltage Figure 13: Static drain-source on-resistance
DocID024348 Rev 4 7/23
Electrical characteristics
Figure 14: Capacitance variations
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Figure 15: Output capacitance stored energy
Figure 16: Normalized gate threshold voltage vs temperature
Figure 17: Normalized on-resistance vs temperature
Figure 18: Normalized V
(BR)DSS
vs temperature Figure 19: Source-drain diode forward characteristics
8/23 DocID024348 Rev 4
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Figure 20: Maximum avalanche energy vs. starting T j
Electrical characteristics
E
AS
(mJ)
DocID024348 Rev 4 9/23
Test circuits
3 Test circuits
Figure 21: Test circuit for resistive load switching times
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Figure 22: Test circuit for gate charge behavior
Figure 23: Test circuit for inductive load switching and diode recovery times
Figure 24: Unclamped inductive load test circuit
Figure 25: Unclamped inductive waveform Figure 26: Switching time waveform
10/23 DocID024348 Rev 4
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
4
4.1
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
D²PAK (TO-263) type A package information
Figure 27: D²PAK (TO-263) type A package outline
DocID024348 Rev 4 11/23
Package information
Dim.
D1
D2
E
E1
E2 e e1
H
A
A1 b b2 c c2
D
J1
L
L1
L2
R
V2
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Table 10: D²PAK (TO-263) type A package mechanical data mm
Typ. Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10.00
8.50
6.85
7.75
1.30
8.70
7.05
2.54
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.90
7.25
4.88
15.00
2.49
2.29
1.27
1.30
0.40
5.28
15.85
2.69
2.79
1.40
1.75
0° 8°
12/23 DocID024348 Rev 4
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Package information
Figure 28: D²PAK (TO-263) type A recommended footprint (dimensions are in mm)
DocID024348 Rev 4 13/23
Package information
4.2 TO-220FP package information
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Figure 29: TO-220FP package outline
14/23 DocID024348 Rev 4
7012510_Rev_12_B
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Table 11: TO-220FP package mechanical data
Package information mm
Dim.
Min. Typ. Max.
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
E
F
F1
F2
A
B
D
28.6
9.8
2.9
15.9
9
3
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
30.6
10.6
3.6
16.4
9.3
3.2
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
DocID024348 Rev 4 15/23
Package information
4.3
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
TO-220 type A packing information
Figure 30: TO-220 type A package outline
16/23 DocID024348 Rev 4
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Package information
Table 12: TO-220 type A package mechanical data mm
Dim.
Min. Typ. Max. e e1
F
H1
J1
L
L1
L20
A b b1 c
D
D1
E
L30
øP
Q
4.40
0.61
1.14
0.48
15.25
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
3.75
2.65
16.40
28.90
1.27
4.60
0.88
1.55
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
DocID024348 Rev 4 17/23
Package information
4.4
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
TO-247 package information
Figure 31: TO-247 package outline
18/23 DocID024348 Rev 4
0075325_8
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Table 13: TO-247 package mechanical data mm
Dim.
Min. Typ.
E e
L
L1
L2
ØP
ØR
S
A
A1 b b1 b2 c
D
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
5.45
18.50
5.50
Package information
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DocID024348 Rev 4 19/23
Package information
4.5
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
D²PAK type A packing information
Figure 32: D²PAK type A tape outline
20/23 DocID024348 Rev 4
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Figure 33: D²PAK type A reel outline
Package information
Dim.
P1
P2
R
T
W
E
F
K0
P0
A0
B0
D
D1
Table 14: D²PAK type A tape and reel mechanical data
Tape Reel mm
Dim.
Min. Max. Min.
10.5
15.7
1.5
1.59
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
0.35
24.3
A
B
C
D
1.5
12.8
20.2
G
N
T
24.4
100
Base quantity
Bulk quantity mm
Max.
330
1000
1000
13.2
26.4
30.4
DocID024348 Rev 4 21/23
Revision history
5
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Revision history
Date Revision
Table 15: Document revision history
Changes
07-Mar-2013
27-Mar-2013
15-Apr-2013
25-Sep-2017
1
2
3
4
First release.
Updated Figure 1: Internal schematic diagram.
Minor text changes.
Document status promoted from preliminary data to production data.
– Modified: E
AS
value, the entire typical values on Table 5, 6 and 7
– Inserted: Section 2.1: Electrical characteristics (curves)
– Minor text changes
Added: TO-247 package.
Updated title, features and description.
Updated Figure 13: "Static drain-source on-resistance" .
Updated Table 2: "Absolute maximum ratings" ,
Table 5: "On/offstate" , Table 6: "Dynamic"
and Table 8: "Source-drain diode" .
Added Figure 8: "Safe operating area for TO-247" and Figure 9:
"Thermal impedance for TO-247" .
Updated Section 4.4: "TO-247 package information".
Minor text changes.
22/23 DocID024348 Rev 4
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
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DocID024348 Rev 4 23/23
