STB60NF06LT4
Automotive-grade N-channel 60 V, 0.012
Ω typ., 60 A
STripFET™ II Power MOSFET in a D²PAK package
Datasheet - production data
TAB
1
3
D2PAK
Figure 1: Internal schematic diagram
G(1)
D(2, TAB)
Order code
STB60NF06LT4
S(3)
Features
Order code V
DS
R
DS(on) max.
I
D
P
TOT
STB60NF06LT4 60 V
0.014 Ω
60 A 110 W
•
Designed for automotive applications and
AEC-Q101 qualified
•
Exceptional dv/dt capability
•
100% avalanche tested
•
•
Application-oriented characterization
175°C operating range
•
Low threshold drive
Applications
•
Switching applications
AM01475v1_Tab
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and
Computer applications. It is also suitable for any application with low gate charge drive requirements.
Table 1: Device summary
Marking Package Packing
B60NF06L D²PAK Tape and reel
June 2015 DocID028008 Rev 1
This is information on a product in full production.
1/15 www.st.com
Contents
Contents
STB60NF06LT4
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
4.2
D²PAK (TO-263) type A package information ................................... 9
D²PAK packing information ............................................................. 12
5 Revision history ............................................................................ 14
2/15 DocID028008 Rev 1
STB60NF06LT4
1 Electrical ratings
Symbol
V
DSS
V
DGR
V
GS
I
D
I
DM
(1)
P
TOT
dv/dt
(2)
T stg
T j
Table 2: Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0 V)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed)
Total dissipation at T case
= 25 °C
Peak diode recovery voltage slope
Storage temperature
Operating junction temperature
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
SD
≤ 60 A, di/dt ≤ 600 A/μs; T j
≤ T jmax
, V
DD
= 80% V
(BR)DSS
.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R
thj-PCB
(1)
Thermal resistance junction-case
Thermal resistance junction-PCB
Notes:
(1)
When mounted on a 1-inch² FR-4, 2 Oz copper board.
Symbol
E
AS
(1)
Table 4: Avalanche characteristics
Parameter
Single pulse avalanche energy
Notes:
(1)
starting T j
= 25 °C, I
D
= 30 A, V
DD
= 30 V.
Electrical ratings
Value
60
60
±15
60
42
240
110
20
-65 to 175
Value
1.36
35
Value
320
Unit mJ
Unit
V
V
V
A
A
W
V/ns
°C
Unit
°C/W
DocID028008 Rev 1 3/15
Electrical characteristics
2 Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5: Static
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 250 µA
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 60 V
V
GS
= 0 V, V
DS
= 60 V,
T case
= 125 °C
I
GSS
Gate-body leakage current
V
DS
= 0 V, V
GS
= ±15 V
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
R
DS(on)
Static drain-source onresistance
V
GS
= 5 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A
Table 6: Dynamic
Symbo l
Parameter Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
V
DD
= 48 V, I
D
= 60 A,
V
GS
= 4.5 V, R
G
= 4.7
Ω (see
Figure 14: "Gate charge test circuit" )
Table 7: Switching times
Symbo l
Parameter Test conditions t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 30 V, I
D
= 30 A,
R
G
= 4.7
Ω, V
GS
= 4.5 V (see
Figure 13: "Switching times test circuit for resistive load" and Figure 18: "Switching time waveform" )
STB60NF06LT4
Min. Typ. Max. Unit
60
1
Min. Typ. Max. Unit
-
-
-
-
-
-
-
-
-
-
2000
360
125
35
10
20
V
1
µA
10
±100 nA
2.5
0.014 0.016
V
Ω
0.012 0.014
35
220
55
30
-
-
-
66
-
-
-
-
-
- pF nC
Min. Typ. Max. Unit ns
4/15 DocID028008 Rev 1
STB60NF06LT4
Symbol Parameter
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
I
Q rr
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 8: Source-drain diode
Test conditions
I
V
GS
SD
= 0 V, I
SD
= 60 A
= 60 A, di/dt = 100 A/µs,
V
DD
= 30 V, T j
= 150 °C (see
Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Electrical characteristics
Min. Typ. Max. Unit
- 60 A
- 240 A
-
- 110
1.3 V ns
- 250 nC
- 4.5 A
DocID028008 Rev 1 5/15
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STB60NF06LT4
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
6/15 DocID028008 Rev 1
STB60NF06LT4
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Source-drain diode forward characteristics
DocID028008 Rev 1 7/15
Test circuits
3 Test circuits
Figure 13: Switching times test circuit for resistive load
STB60NF06LT4
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
8/15 DocID028008 Rev 1
STB60NF06LT4
4
4.1
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
D²PAK (TO-263) type A package information
Figure 19: D²PAK (TO-263) type A package outline
DocID028008 Rev 1
0079457_A_rev22
9/15
Package information
Dim. e e1
H
J1
D2
E
E1
E2 c c2
D
D1
A
A1 b b2
L
L1
L2
R
V2
Table 9: D²PAK (TO-263) type A package mechanical data mm
Min. Typ.
STB60NF06LT4
Max.
4.88
15
2.49
2.29
1.27
1.30
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10
8.50
6.85
0.4
7.75
1.30
8.70
7.05
2.54
5.28
15.85
2.69
2.79
1.40
1.75
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.90
7.25
0° 8°
10/15 DocID028008 Rev 1
STB60NF06LT4 Package information
Figure 20: D²PAK (TO-263) recommended footprint (dimensions are in mm)
DocID028008 Rev 1 11/15
Package information
4.2 D²PAK packing information
Figure 21: Tape
STB60NF06LT4
12/15 DocID028008 Rev 1
STB60NF06LT4
Figure 22: Reel
Package information
T
40mm min.
access hole at slot location
D
B
C
A
N
G measured at hub
Full radius
Tape slot in core for tape start
2.5mm min.width
Dim.
K0
P0
P1
P2
R
T
W
A0
B0
D
D1
E
F
Table 10: D²PAK tape and reel mechanical data
Tape Reel mm
Dim.
Min.
4.8
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
1.65
11.4
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
0.35
24.3
A
B
C
D
G
N
T
Base qty
Bulk qty
Min.
1.5
12.8
20.2
24.4
100 mm
AM06038v1
Max.
330
13.2
26.4
30.4
1000
1000
DocID028008 Rev 1 13/15
Revision history
5
STB60NF06LT4
Revision history
Date
24-Jun-2015
Table 11: Document revision history
Revision
1
Changes
First release.
14/15 DocID028008 Rev 1
STB60NF06LT4
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DocID028008 Rev 1 15/15
