STN3P6F6
P-channel -
60 V, 0.13 Ω typ., -3 A STripFET™ F6
Power MOSFET in a SOT-223 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max.
STN3P6F6 -60 V 0.16 Ω
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
I
D
-3 A
G(1)
Order code
STN3P6F6
S(3)
D(2, 4)
Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all packages.
Int_schem_P_ch_nTnZ_SOT_223
Table 1: Device summary
Marking Package
3P6F6 SOT-223
Packing
Tape and reel
October 2016 DocID023758 Rev 5
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
STN3P6F6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
5 Revision history ............................................................................ 12
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STN3P6F6
1
Electrical ratings
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
P
TOT
(1)
T j
T stg
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T pcb
= 25 °C
Drain current (continuous) at T pcb
= 100 °C
Drain current (pulsed)
Total dissipation at T pcb
= 25 °C
Operating junction temperature range
Storage temperature range
Notes:
(1)
Pulse width is limited by safe operating area
Symbol
R
thj-pcb
(1)
Table 3: Thermal data
Parameter
Thermal resistance junction-pcb
Notes:
(1)
When mounted on FR-4 board of 1 inch², 2 Oz Cu, t<10 s
Value
-60
± 20
-3
-2
-12
2.6
- 55 to 175
Value
57
Unit
°C/W
Unit
A
A
W
°C
°C
V
V
A
DocID023758 Rev 5 3/13
Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: On/off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage(V
GS
= 0)
I
D
= -250 µA
I
DSS
Zero gate voltage Drain current
(V
GS
= 0)
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source onresistance
V
DS
= -60 V
V
DS
= -60 V, T
C
= 125 °C (1)
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= -250 µA
V
GS
= -10 V, I
D
= -1.5 A
STN3P6F6
Min. Typ. Max. Unit
-2
-60 V
-1 µA
-10 µA
±100 nA
-4 V
0.13 0.16
Ω
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= -48 V, f = 1 MHz,
V
GS
= 0
V
DD
= -48 V, I
D
= -3 A,
V
GS
= -10 V
(see Figure 14: "Gate charge test circuit" )
Table 6: Switching times
Test conditions Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
V
DD
= -48 V, I
D
= -1.5 A ,
R
G
= 4.7 Ω, V
GS
= -10 V
(see Figure 13: "Switching times test circuit for resistive load" )
Min. Typ. Max. Unit
- 340
-
-
40
20
- 6.4
- 1.7
-
-
-
-
- pF pF pF nC nC
- 1.7 - nC
Min. Typ. Max. Unit
-
-
-
-
6.4
5.3
14
3.7
-
-
-
- ns ns ns ns
4/13 DocID023758 Rev 5
STN3P6F6
Symbol
I
SD
Source-drain current
I
SDM
(1)
Source-drain current (pulsed)
V
SD
(2)
Forward on voltage
I t rr
Q rr
RRM
Parameter
Reverse recovery time
Reverse recovery charge
Table 7: Source drain diode
Test conditions
Reverse recovery current
I
I
SD
SD
= -3 A, V
= -5 A,
GS
= 0 di/dt = 100 A/µs, V
DD
= -
16 V,T j
= 150 °C
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
- 20
- 17.8
-3
-12
-1.1
A
A
V ns nC
- -1.8 A
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulse duration = 300 µs, duty cycle 1.5%
DocID023758 Rev 5 5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
STN3P6F6
For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed .
Figure 2: Safe operating area Figure 3: Thermal impedance
* pcb
Figure 4: Output characteristics Figure 5: Transfer characteristics
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STN3P6F6
Figure 6: Gate charge vs gate-source voltage
Electrical characteristics
Figure 7: Static drain-source on-resistance
(mΩ)
C
(pF)
400
Figure 8: Capacitance variations
300
200
Ciss
100
0
0 10 20 30 40 50
Coss
Crss
V
DS
(V)
Figure 10: Normalized gate threshold voltage vs temperature
Figure 9: Normalized V(BR)DSS vs. temperature
Figure 11: Normalized on-resistance vs. temperature
DocID023758 Rev 5 7/13
Electrical characteristics
Figure 12: Source-drain diode forward characteristics
STN3P6F6
8/13 DocID023758 Rev 5
STN3P6F6
3 Test circuits
Figure 13: Switching times test circuit for resistive load
Test circuits
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching and diode recovery times
DocID023758 Rev 5 9/13
Package information
4 Package information
STN3P6F6
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
Figure 16: SOT-223 package outline
10/13 DocID023758 Rev 5
STN3P6F6 c
D e e1
A
A1
B
B1
E
H
V
Dim.
Table 8: SOT-223 package mechanical data mm
Min. Typ.
Package information
0.02
0.6
2.9
0.24
6.3
3.3
6.7
0.7
3
0.26
6.5
2.3
4.6
3.5
7.0
Max.
1.8
0.1
0.85
3.15
0.35
6.7
3.7
7.3
10º
Figure 17: SOT-223 recommended footprint (dimensions are in mm)
DocID023758 Rev 5 11/13
Revision history
5
STN3P6F6
Revision history
Date Revision
Table 9: Document revision history
Changes
31-Oct-2012
09-Nov-2012
16-Jan-2013
14-Mar-2013
07-Oct-2016
1
2
3
4
5
First release.
Modified: note 1 in Table 3
Document status promoted from preliminary data to production data
Modified: Figure 1, 3, Ciss, Coss, Crss typical values in Table 5
Updated title, features and description in cover page.
Updated silhouette and Figure 1: "Internal schematic diagram" .
Updated Figure 16: "SOT-223 package outline" .
Minor text changes.
12/13 DocID023758 Rev 5
STN3P6F6
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