STN3P10F6
P-channel -
100 V, 0.136 Ω typ., -3 A STripFET™ F6
Power MOSFET in an SOT-223 package
Datasheet - preliminary data
Figure 1: Internal schematic diagram
D(2, 4)
G(1)
Features
Order code V
DS
R
DS(on)
max.
STN3P10F6 -100 V
0.180 Ω
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
I
D
-3 A
Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all packages.
Order code
STN3P10F6
S(3)
Int_schem_P_ch_nTnZ_SOT_223
Table 1: Device summary
Marking Package
3P10F6 SOT-223
Packing
Tape and reel
February 2018 DocID030857 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/13 www.st.com
Contents
Contents
STN3P10F6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1
SOT-223 package information ........................................................ 10
5 Revision history ............................................................................ 12
2/13 DocID030857 Rev 2
STN3P10F6
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
DM
P
TOT
(1)
T j
T stg
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T pcb
= 25 °C
Drain current (continuous) at T pcb
= 100 °C
Drain current (pulsed)
Total dissipation at T pcb
= 25 °C
Operating junction temperature range
Storage temperature range
Notes:
(1)
Pulse width is limited by safe operating area
Symbol
R
thj-pcb
(1)
Table 3: Thermal data
Parameter
Thermal resistance junction-pcb
Notes:
(1)
When mounted on FR-4 board of 1 inch², 2 Oz Cu, t<10 s
Electrical ratings
Value
-100
±20
-3
-2
-12
3.3
-55 to 175
Unit
V
V
A
A
A
W
°C
°C
Value
46
Unit
°C/W
DocID030857 Rev 2 3/13
Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: On/off states
Test conditions
V
(BR)DSS
I
DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= -1 mA
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= -100 V
V
GS
= 0 V, V
DS
= -100 V,
T
C
= 125 °C (1)
Gate-body leakage current V
DS
= 0 V, V
GS
= ±20 V I
GSS
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source on-resistance
V
V
DS
GS
= V
GS
, I
D
= -250 µA
= -10 V, I
D
= -1.5 A
STN3P10F6
Min. Typ. Max. Unit
-100 V
-1 µA
-10 µA
±100 nA
-4 V
0.136 0.180 Ω
-2
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= -25 V, f = 1 MHz,
V
GS
= 0 V
V
DD
= -50 V, I
D
= -3 A,
V
GS
= -10 V
(see Figure 14: "Gate charge test circuit" )
Table 6: Switching times
Test conditions Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
V
DD
= -50 V, I
D
= -1.5 A,
R
G
= 4.7 Ω, V
GS
= -10 V
(see Figure 13: "Switching times test circuit for resistive load" )
Min. Typ. Max. Unit
-
-
900
60
-
- pF pF
-
-
-
-
33
16.5
3.5
3.8
-
-
-
- pF nC nC nC
Min. Typ. Max. Unit
-
-
-
-
10.5
4.8
24
4.5
-
-
-
- ns ns ns ns
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STN3P10F6
Symbol Parameter
V
SD
(1)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
RRM
Table 7: Source drain diode
Test conditions
Reverse recovery current
I
I
SD
SD
V
= -3 A, V
GS
= 0 V
= -3 A, di/dt = 100 A/µs,
DD
= -80 V,T j
= 150 °C
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
- 26.5
- 36.5
- -2.7
-1.1 V ns nC
A
Notes:
(1)
Pulse duration = 300 µs, duty cycle 1.5%
DocID030857 Rev 2 5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
STN3P10F6
For the P-channel Power MOSFET, current and voltage polarities are reversed.
Figure 2: Safe operating area Figure 3: Normalized thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
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STN3P10F6
Figure 6: Gate charge vs gate-source voltage
Electrical characteristics
Figure 7: Capacitance variations
Figure 8: Static drain-source on-resistance Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V
(BR)DSS
vs temperature
DocID030857 Rev 2 7/13
Electrical characteristics
Figure 12: Source-drain diode forward characteristics
STN3P10F6
8/13 DocID030857 Rev 2
STN3P10F6
3 Test circuits
Figure 13: Switching times test circuit for resistive load
Test circuits
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching and diode recovery times
DocID030857 Rev 2 9/13
Package information
4
4.1
Package information
STN3P10F6
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
SOT-223 package information
Figure 16: SOT-223 package outline
10/13 DocID030857 Rev 2
STN3P10F6 c
D e e1
A
A1
B
B1
E
H
V
Dim.
Table 8: SOT-223 package mechanical data mm
Min. Typ.
Package information
0.02
0.6
2.9
0.24
6.3
3.3
6.7
0.7
3
0.26
6.5
2.3
4.6
3.5
7.0
Max.
1.8
0.1
0.85
3.15
0.35
6.7
3.7
7.3
10º
Figure 17: SOT-223 recommended footprint (dimensions are in mm)
DocID030857 Rev 2 11/13
Revision history
5
STN3P10F6
Revision history
Date Revision
Table 9: Document revision history
Changes
02-Aug-2017
07-Feb-2018
1
2
First release.
Updated Section 1: "Electrical ratings" .
Added Section 2.1: "Electrical characteristics (curves)" .
Minor text changes
12/13 DocID030857 Rev 2
STN3P10F6
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