STMicroelectronics STTH12010TV Datasheet
STMicroelectronics STTH12010TV is an ultrafast recovery diode designed for heavy-duty applications that demand long-term reliability. It features low leakage current, reproducible characteristics, and intrinsic ruggedness, making it ideal for industrial power supplies, motor control, and similar systems requiring rectification and freewheeling. Its high reverse voltage capability and junction temperature allow for high-frequency and high-pulsed current operation. Additionally, the insulated package provides electrical insulation of 2500Vrms and capacitance of 45pF.
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STTH12010TV
Ultrafast recovery - high voltage diode
Datasheet
production data
Features
■
■
■
■
■
■
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and high pulsed current operation
High reverse voltage capability
High junction temperature
Insulated package
– Electrical insulation = 2500 V rms
– Capacitance = 45 pF
Description
The compromise-free, high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.
These demanding applications include industrial power supplies, motor control, and similar industrial systems that require rectification and freewheeling. This diode also fits into auxiliary functions such as snubber, bootstrap, and demagnetization applications.
The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate advantage for reducing maintenance of equipment.
A1 K1
A2 K2
A1
K1
A2
K2
ISOTOP
STTH12010TV1
Table 1.
Device summary
Symbol
I
F(AV)
V
RRM t rr
(typ)
T j
V
F
(typ)
Value
2 x 60 A
1000 V
49 ns
150 °C
1.30 V
October 2012
This is information on a product in full production.
Doc ID12168 Rev 2 1/8 www.st.com
8
Characteristics
1 Characteristics
STTH12010TV
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FRM
I
FSM
T stg
T j
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current,
= 0.5
per diode
Repetitive peak forward current
Surge non repetitive forward current t p
= 10 ms sinusoidal
Storage temperature range t p
= 5 µs, F = 5 kHz square
Maximum operating junction temperature
Value
T c
= 50° C
1000
150
60
750
400
-65 to + 150
150
Unit
A
A
°C
°C
V
A
A
Table 3.
Thermal resistance
Symbol Parameter Unit
R th(j-c)
R th(c)
Junction to case
Coupling thermal resistance
Per diode
Total
Value
0.80
0.45
0.1
°C/W
When the diodes are used simultaneously:
T j(diode1)
= P
(diode1)
x R th(j-c)
(per diode) + P
(diode2)
x R th(c)
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter Test conditions
I
R
(1)
V
F
(2)
Reverse leakage current
Forward voltage drop
T j
= 25° C
T j
= 125° C
T j
= 25° C
T j
= 100° C
T j
= 150° C
V
R
= V
RRM
I
F
= 60 A
1.
Pulse test: t p
= 5 ms,
< 2%
2.
Pulse test: t p
= 380 µs,
< 2%
To evaluate the conduction losses use the following equation:
P = 1.3 x I
F(AV)
+ 0.0067 I
F
2
(RMS)
Min.
Typ
20
1.40
1.30
Max.
Unit
20
200
2.0
1.80
1.70
µA
V
2/8 Doc ID12168 Rev 2
STTH12010TV Characteristics
Table 5.
Symbol t rr
I
RM
S t fr
V
FP
Dynamic characteristics
Parameter
Reverse recovery time
Reverse recovery current
Softness factor
Forward recovery time
Forward recovery voltage
Figure 1.
Conduction losses versus average current
140
P(W)
=0.05
=0.2
=0.5
=0.1
=1
120
100
80
60
40
20
0
0 10 20 30
I
F(AV)
(A)
40 50 60
T
70 80
Test conditions
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T j
= 25° C
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T j
= 25° C
I
F
= 1 A, dI
F
/dt = -200 A/µs,
V
R
= 30 V, T j
= 25° C
I
F
= 60 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T j
= 125° C
I
F
= 60 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T j
= 125° C
I
F
= 60 A dI
F
/dt = 100 A/µs
V
FR
= 1.5 x V
Fmax
, T j
= 25° C
I
F
= 60 A, dI
F
/dt = 100 A/µs,
T j
= 25° C
Figure 2.
Forward voltage drop versus
200
I
FM
(A)
180
160
140
120
100
80
60
40
20
0
0.0
0.5
forward current
T j
=150°C
(Maximum values)
T j
=150°C
(Typical values)
1.0
1.5
Min.
Typ.
Max.
Unit
2.0
61
49
31
1
4
T j
=25°C
(Maximum values)
V
FM
(V)
2.5
115
80
65
40
750
3.0
ns
A ns
V
3.5
Figure 3.
Relative variation of thermal impedance junction to case versus pulse duration
1.0
Z th(j-c)
/R th(j-c)
0.9
Single pulse
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Figure 4.
Peak reverse recovery current versus dI
F
/dt (typical values)
50
40
30
20
70
I
RM
(A)
60
V
R
=600V
T j
=125°C
10
0
0
I
F
=0.5 x I
F(AV)
I
F
= I
F(AV)
I
F
= 2 x I
F(AV)
50 100 150 200 250 300 350 400 450 500
Doc ID12168 Rev 2 3/8
Characteristics STTH12010TV
Figure 5.
Reverse recovery time versus dI
F
/dt (typical values)
1000
900
800
700
600
500
400
300
200
100
0
0
I
F
= 2 x I
F(AV)
I
F
= I
F(AV)
V
R
=600V
T j
=125°C
I
F
=0.5 x I
F(AV)
50 100 150 200 250 300 350 400 450 500
Figure 7.
Softness factor versus
1.00
0.75
dI
F
/dt (typical values)
1.50
S factor
I
F
= 2 x I
F(AV)
V
R
=600V
T j
=125°C
1.25
0.50
0 50 100 150 200 250 300 350 400 450 500
Figure 6.
Reverse recovery charges versus dI
F
/dt (typical values)
10
V
R
T j
=600V
=125°C
I
F
= 2 x I
F(AV)
8
I
F
= I
F(AV)
6
4
2
I
F
=0.5 x I
F(AV)
0
0 50 100 150 200 250 300 350 400 450 500
Figure 8.
Relative variations of dynamic parameters versus junction temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
S factor
I
RM
Q
RR
50 t
RR
75
I
F
V
R
= I
F(AV)
=600V
Reference: T j
=125°C
100 125
4/8 Doc ID12168 Rev 2
STTH12010TV Characteristics
Figure 9.
Transient peak forward voltage versus dI
F
/dt (typical values)
20
V
FP
(V)
18
I
F
T
= I
F(AV) j
=125°C
16
14
12
10
8
6
4
2
0
0 100 200 300 400 500
Figure 10.
Forward recovery time versus dI
F
(typical values)
/dt
1100
1000
900
800
700
600
500
400
300
200
0 100 200 300
V
FR
I
F
= 1.5 x V
F
T j
= I
F(AV)
=125°C max.
400 500
Figure 11.
Junction capacitance versus reverse voltage applied (typical values)
1000
C(pF)
F=1MHz
V osc
=30mV
RMS
T j
=25°C
100
10
1 10 100 1000
Doc ID12168 Rev 2 5/8
Package information STTH12010TV
●
●
Epoxy meets UL94, V0
Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Table 6.
ISOTOP dimensions
A
A1
D S
P1
B
F1
E
G2
E2
F
ØP
G1
E1
C
C2
G D1
Ref.
G2
F
F1
P
E1
E2
G
G1
P1
S
C2
D
D1
E
A
A1
B
C
Dimensions
Millimeters
Min.
Max.
11.80
8.90
7.8
0.75
1.95
37.80
31.50
25.15
23.85
24.15
24.80 typ.
14.90
12.60
15.10
12.80
3.50
4.10
4.60
4.00
4.00
30.10
4.30
4.30
5.00
4.30
4.40
30.30
12.20
9.10
8.20
0.85
2.05
38.20
31.70
25.50
Inches
Min.
Max.
0.465
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
0.951
0.976 typ.
0.587
0.496
0.594
0.504
0.138
0.161
0.181
0.157
0.157
1.185
0.169
0.169
0.197
0.69
0.173
1.193
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
6/8 Doc ID12168 Rev 2
STTH12010TV Ordering information
Table 7.
Ordering information
Part Number Marking Package Weight Base qty
(1)
Delivery mode
STTH12010TV1 STTH12010TV1 ISOTOP 27 g
10 with screws
Tube
1.
This product is supplied with 40 terminal screws and washers for each tube. The screws and washers are supplied in a separate pack with the order.
Table 8.
Date
Document revision history
Revision
02-Mar-2006
23-Oct-2012
1
2
Description of Changes
First issue.
Remove information related to TV2 product. Added footnote to
Doc ID12168 Rev 2 7/8
STTH12010TV
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