STF90N15F7
Nchannel 150 V, 12.3 mΩ typ., 38 A STripFET™ F7
Power MOSFET in a TO-220FP package
Datasheet - preliminary data
TO-220FP
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max. I
D
STF90N15F7 150 V 14.5 mΩ
Among the lowest R
DS(on)
on the market
Excellent figure of merit (FoM)
Low C rss
/C iss
ratio for EMI immunity
High avalanche ruggedness
38 A
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code
STF90N15F7
Table 1: Device summary
Marking Package
90N15F7 TO-220FP
Packaging
Tube
January 2016 DocID028854 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/11 www.st.com
Contents
Contents
STF90N15F7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
3 Test circuits ..................................................................................... 6
4 Package information ....................................................................... 7
4.1
TO-220FP package information ........................................................ 8
5 Revision history ............................................................................ 10
2/11 DocID028854 Rev 1
STF90N15F7
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
Drain-source voltage
Gate source voltage
Drain current (continuous) at T
C
= 25 °C
I
D
(1)
Drain current (continuous) at T
C
= 25 °C
I
DM
(2)
Drain current (pulsed)
P
TOT
Total dissipation at T
C
= 25 °C
V
T
ISO
T
J stg
Insulation withstand voltage (RMS) from all three leads to external heat sink ( t = 1s; Tc= 25 °C)
Operating junction temperature
Storage temperature
Notes:
(1)
Current limited by package.
(2)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Electrical ratings
Value
150
± 20
38
27
152
38
2500
-55 to 175
Unit
V
V
A
A
A
W
V
°C
Value
4.0
62.5
Unit
°C/W
°C/W
DocID028854 Rev 1 3/11
Electrical characteristics
2 Electrical characteristics
STF90N15F7
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: On /off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1mA
I
DSS
Zero gate voltage drain current
V
GS
= 0 , V
DS
=150 V
V
GS
= 0, V
DS
=150 V,T
C
= 125 °C
V
I
GSS
GS(th)
Gate-body leakage current V
DS
= 0 V, V
GS
= 20 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 μA
R
DS(on)
Static drain-source onresistance
V
GS
= 10 V, I
D
= 19 A
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25 V, f = 1 MHz,V
GS
= 0 V
V
DD
= 75 V, I
D
= 38 A,
V
GS
= 10 V
(see Figure 3: "Test circuit for gate charge behavior" )
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 6: Switching times
Test conditions
V
DD
= 75 V, I
D
= 19 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 2: "Test circuit for resistive load switching times" and Figure 7: "Switching time waveform" )
Min. Typ. Max. Unit
150
2.5
Min. Typ. Max. Unit
-
-
3500
1630
-
- pF pF
-
-
-
-
V
1 µA
100 µA
100 nA
4.5 V
12.3 14.5 mΩ
90
53
TBD
TBD
Min. Typ. Max. Unit
- TBD
- TBD
- TBD
-
-
- ns ns ns
- TBD
-
-
-
-
- pF nC nC nC ns
4/11 DocID028854 Rev 1
STF90N15F7
Symbol Parameter
V
SD
(1)
Forward on voltage t rr
Reverse recovery time
Table 7: Source-drain diode
Test conditions
I
SD
= 38 A, V
GS
= 0 V
I
Q rr
RRM
Reverse recovery charge
Reverse recovery current
I
SD
= 38 A, di/dt = 100 A/µs
V
DD
= 120 V
(see Figure 4: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
- TBD
1.2 V ns
- TBD nC
- TBD A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID028854 Rev 1 5/11
Test circuits
3 Test circuits
Figure 2: Test circuit for resistive load switching times
STF90N15F7
Figure 3: Test circuit for gate charge behavior
Figure 4: Test circuit for inductive load switching and diode recovery times
Figure 5: Unclamped inductive load test circuit
6/11
Figure 6: Unclamped inductive waveform
Figure 7: Switching time waveform
DocID028854 Rev 1
STF90N15F7
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID028854 Rev 1 7/11
Package information
4.1 TO-220FP package information
Figure 8: TO-220FP package outline
STF90N15F7
8/11 DocID028854 Rev 1
STF90N15F7
Dim.
G1
H
L2
L3
L4
L5
L6
L7
Dia
F
F1
F2
G
A
B
D
E
Table 8: TO-220FP package mechanical data mm
Min. Typ.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
Package information
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
DocID028854 Rev 1 9/11
Revision history
5
STF90N15F7
Revision history
Date
11-Jan-2016
Table 9: Document revision history
Revision
1
Changes
First release.
10/11 DocID028854 Rev 1
STF90N15F7
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DocID028854 Rev 1 11/11
