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Features
Very low conduction losses
Negligible switching losses
Extremely fast switching
Low thermal resistance
Avalanche capacity specified
High junction temperature
ECOPACK ® 2 compliant component
STPS8H100DEE
.
High voltage power Schottky rectifier
Datasheet
-
production data
Description
This Schottky rectifier is designed for switch mode power supply and high frequency DC to DC converters.
Packaged in PowerFLAT™, this device is intended for use in low voltage, high frequency, inverters, free-wheeling, bypass diode and polarity protection applications. Its low profile was especially designed to be used in applications with space-saving constraints.
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
T j
(max)
V
F
(typ)
8 A
100 V
175 °C
0.68 V
December 2016
This is information on a product in full production.
TM: PowerFLAT is a trademark of STMicroelectronics
DocID023272 Rev 3 1/8 www.st.com
Characteristics
1 Characteristics
STPS8H100DEE
Table 2. Absolute ratings (limiting values T amb
= 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
P
I
FSM
ARM
(1)
Repetitive peak reverse voltage
Forward rms current
Average forward current, = 0.5
Tc = 150 °C
Surge non repetitive forward current t p
= 10 ms sinusoidal
Repetitive peak avalanche power t p
= 10 µs T j
=
125 °C
100
15
8
100
480
V
A
A
A
W
T stg
T j
Storage temperature range
Maximum operating junction temperature
-65 to +175
175
1. For pulse time duration deratings, please refer to
Figure 3
. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics application notes AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”.
°C
°C
Table 3. Thermal resistance
Parameter Symbol
R th(j-c)
Junction to case
Value
4
Unit
°C/W
Symbol
I
R
(1)
V
F
(2)
Parameter
Table 4. Static electrical characteristics
Test conditions Min.
Typ.
Reverse leakage current
Forward voltage drop
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
V
R
= V
RRM
I
F
= 8 A
I
F
= 10 A
I
F
= 16 A
-
-
-
-
-
2
0.60
0.62
0.68
1. Pulse test: t p
= 5 ms, δ < 2%
2. Pulse test: t p
= 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.61 x I
F(AV)
+ 0.0088 x I
F
2
(RMS)
Max.
4.5
6
0.82
0.68
0.85
0.70
0.90
0.75
Unit
µA mA
V
2/8 DocID023272 Rev 3
STPS8H100DEE Characteristics
3
2
1
Figure 1. Average forward power dissipation versus average forward current
7
PF(AV)(W)
δ
= 0.2
δ = 0.5
6
δ = 0.1
5 δ
= 0.05
δ
= 1
4
10
8
6
Figure 2. Average forward current versus ambient temperature ( δ = 0.5)
I
F(AV)
(A)
Rth(j-a)=Rth(j-c)
0
0 1 2 3
IF(AV)(A)
4 5 6 7
δ =tp/T
8
4
T
2
9 tp
10
0
0
δ =tp/T
25
T tp
50 75
T amb
(°C)
100 125 150 175
Figure 3. Normalized avalanche power derating versus pulse duration
1
P
ARM
(tp)
P
ARM
(10 µs)
0.1
0.01
0.001
1 10 100 1000
Figure 4. Relative variation of thermal impedance junction to case versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-05
Single pulse
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Figure 5. Reverse leakage current versus
1.E+02
I
R
(mA)
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03 reverse voltage applied (typical values)
1.E-04
0
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 75 °C
Tj = 50 °C
Tj = 25 °C
100
10 20 30 40 50 60 70 80
V
R
(V)
90 100
10
1
Figure 6. Junction capacitance versus reverse voltage applied (typical values)
1000
C(pF)
F=1 MHz
V
OSC
=30 mV
Tj = 25°C
RMS
10
VR(V)
100
DocID023272 Rev 3 3/8
8
Characteristics STPS8H100DEE
Figure 7. Forward voltage drop versus forward current
100.0
IFM(A)
T j
=125 °C
(Maximum values)
Figure 8. Thermal resistance junction to ambient versus copper surface under tab
250
Rth(j-a)(°C/W) epoxy printed board FR4, copper thickness=35µm
200
PowerFLAT (3.3x3.3)
10.0
T j
=125 °C
(Typical values)
150
T j
=25 °C
(Maximum values)
100
1.0
50
SCu(cm²)
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
0 1 2 3 4 5 6 7 8 9 10
4/8 DocID023272 Rev 3
STPS8H100DEE Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Figure 9. PowerFLAT™ (3.3 x 3.3) package outline
Exposed pad
L1
E2
L
A3
E
E/2 b nc
D3 e/2 e a k
D2 k nc
D/2
D a
L2 A
Index area
(D/2 x E/2)
Projection
DocID023272 Rev 3 5/8
8
Package information
Ref.
E
E2
L
L1
L2
D
D2
D3 e
A
A3
A4 b
STPS8H100DEE
Min.
0.95
3.20
1.68
0.31
0.55
0.86
0.30
3.20
2.24
1.60
Table 5. PowerFLAT™ (3.3 x 3.3) mechanical data
Dimensions
Millimeters Inches
Typ.
3.30
1.75
0.38
0.62
0.93
3.30
2.31
1.67
0.65
1.00
0.20
0.20
0.37
Max.
1.05
3.40
1.82
0.45
0.69
1.00
0.44
3.40
2.38
1.74
Min.
0.037
0.012
0.126
0.088
0.063
0.126
0.066
0.012
0.22
0.034
Typ.
0.039
0.0079
0.0079
0.015
0.130
0.091
0.066
0.026
0.130
0.069
0.015
0.024
0.037
Figure 10. Footprint (dimensions in mm)
3.50
1.75
Max.
0.041
0.017
0.134
0.094
0.069
0.134
0.072
0.018
0.027
0.039
1.25
1.79
0.21
0.52
6/8 DocID023272 Rev 3
STPS8H100DEE Ordering information
Order code
STPS8H100DEE-TR
Table 6. Ordering information
Marking Package Weight Base qty Delivery mode
S8H100
PowerFLAT™
(3.3 x 3.3)
34 mg 3000
Tape and reel
13” reel
Date
9-Sep-2012
16-Jan-2015
13-Dec-2016
Table 7. Document revision history
Revision Changes
1
2
3
First issue.
Updated order code name and reformatted to current standard.
Updated restriction and order code.
DocID023272 Rev 3 7/8
8
STPS8H100DEE
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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
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ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2016 STMicroelectronics – All rights reserved
8/8 DocID023272 Rev 3
