SCTWA70N120G2V
Datasheet
Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 long leads package
HiP247 long leads
G(1)
D(2, TAB)
S(3)
Features
Order code
SCTWA70N120G2V
V
DS
1200 V
R
DS(on)
typ.
21 mΩ
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (T
J
= 200 °C)
Applications
• Switching mode power supply
• DC-DC converters
• Industrial motor control
I
D
91 A
AM01475v1_noZen
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2 nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Product status link
SCTWA70N120G2V
Product summary
Order code
Marking
Package
Packing
SCTWA70N120G2V
SCT70N120G2
HiP247 long leads
Tube
DS14087 - Rev 1 - October 2022
For further information contact your local STMicroelectronics sales office.
www.st.com
SCTWA70N120G2V
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
V
I
DS
GS
D
Parameter
Drain-source voltage
Gate-source voltage
Gate-source voltage (recommended operating values)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
I
DM
(1)
P
TOT
T stg
T
J
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
1. Pulse width is limited by safe operating area.
Symbol
R thJC
R thJA
Table 2. Thermal data
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Value
1200
-10 to 22
-5 to 18
91
69
274
547
-55 to 200
A
A
W
°C
Unit
V
V
Value
0.32
40
Unit
°C/W
°C/W
DS14087 - Rev 1 page 2/12
2
SCTWA70N120G2V
Electrical characteristics
Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 3. On/off states
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
Zero-gate voltage drain current V
DS
= 1200 V, V
GS
= 0 V
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
V
DS
= 0 V, V
GS
= -10 to 22 V
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 18 V, I
D
= 50 A
V
GS
= 18 V, I
D
= 50 A, T
J
= 200 °C
Symbol
E on
E off
Parameter
Turn-on switching energy
Turn-off switching energy
Table 5. Switching energy
Test conditions
V
DD
= 800 V, I
D
= 50 A
R
G
= 3.3 Ω, V
GS
= -5 to 18 V
Min.
Typ.
Max.
Unit
1200 V
1.9
2.45
21
10 µA
±100 nA
4.9
30
V mΩ
46
Symbol
C iss
C oss
C rss
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
Table 4. Dynamic
DS
Test conditions
= 800 V, f = 1 MHz, V f = 1 MHz, I
D
= 0 A
GS
= 0 V
V
DD
= 800 V, I
D
= 50 A, V
GS
= -5 to 18 V
-
-
-
Min.
Typ.
Max.
Unit
3540 pF
176 pF
-
-
28
1
150
28
63
-
-
-
-
nC nC pF
Ω nC
Min.
Typ.
Max.
Unit
1019 µJ
378 µJ
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 800 V, I
D
= 50 A
R
G
= 3.3 Ω, V
GS
= -5 to 18 V
Min.
Typ.
Max.
Unit
-
16
9.5
-
ns ns
-
37
22 -
ns ns
DS14087 - Rev 1 page 3/12
SCTWA70N120G2V
Electrical characteristics
Symbol
V
SD t rr
Q rr
I
RRM
Parameter
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 7. Reverse SiC diode characteristics
Test conditions
I
SD
= 50 A, V
GS
= 0 V
I
SD
= 50 A, V
DD
= 800 V,
V
GS
= -5 to 18 V
Min Typ.
Max Unit
2.7
V
11.16
ns
-
276
40 -
nC
A
DS14087 - Rev 1 page 4/12
SCTWA70N120G2V
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GADG210420201030SOA
I
DM
10
10
2
1
in this area
by
R
DS(on)
R
DS(on)
max.
10 0
10 -1
10 -1 10 0
T
J
= 200 °C
T
C
= 25 °C
Single pulse
10 1 10 2 10 3 t p
=1µs t p
=10µs t p
=100µs t p
=1ms t p
=10ms
V
(BR)DSS
V
DS
(V)
Figure 3. Typical output characteristics (T
J
= 25 °C)
I
C
(A)
150
GADG210420201032OC25
V
GS
=16, 18, 20V
V
GS
=14V
V
GS
=12V
120
90
60
30
0
0 1 2 3 4 5
V
GS
=10V
6
V
GS
=8V
V
GS
=6V
V
CE
(V)
Figure 2. Maximum transient thermal impedance
Z thJC
(°C/W)
GADG210420201030ZTH duty=0.5
0.4
0.3
10 -1
0.05
0.2
0.1
10 -2
R thJC
= 0.32 °C/W duty = t on
/ T
Single pulse
10 -3
10 -6 10 -5 10 -4 10 -3 t on
T
10 -2 t p
(s)
Figure 4. Typical output characteristics (T
J
= 200 °C)
I
C
(A)
100
GADG210420201032OC200
V
GS
=14,16,18, 20V
V
GS
=12V
V
GS
=10V
80
V
GS
=8V
60
40
V
GS
=6V
20
0
0 1 2 3 4 5 6 V
CE
(V)
Figure 5. Typical transfer characteristics
I
D
(A)
150
GADG210420201033TCH
T
J
= 25 °C
120
V
DS
= 5 V T
J
= 200 °C
90
60
30
0
0 4 8 12 16 V
GS
(V)
P
TOT
(W)
500
Figure 6. Total power dissipation
GADG210420201035PDT
400
300
200
100
0
0 50 100
T
J
≤ 200 °C
150 T
C
(°C)
DS14087 - Rev 1 page 5/12
SCTWA70N120G2V
Electrical characteristics (curves)
Figure 7. Typical gate charge characteristics
V
GS
(V)
15
10
5
0
-5
-10
0
V
I
DD
D
= 800 V,
= 50 A
GADG210420201036QVG
30 60 90 120 150 Q g
(nC)
Figure 9. Typical switching energy vs drain current
E
(µJ)
4000
V
DD
V
GS
= 800V, R
G
= -5 to 18V
= 3.3Ω
GADG221220211612RID
Etot
Eon
3000
2000
Eoff
1000
0
0 20 40 60 80 100 I
D
(A)
Figure 8. Typical capacitance characteristics
C
(pF)
GADG210420201036CVR
C
ISS
10 3
C
OSS
10 2 f = 1 MHz
10 1
10 -1 10 0 10 1 10 2
C
RSS
V
DS
(V)
Figure 10. Typical switching energy vs temperature
E
(µJ)
GADG221220211618EOS
V
DD
=800V, I
D
=50 A
R
G
=3.3Ω, V
GS
=-5 to 18V
Etot
1600
1200
Eon
800
400
0
-25 25
Eoff
75 125 175 T
J
(C)
Figure 11. Normalized breakdown voltage vs temperature
V
(BR)DSS
(norm.)
GADG210420201038BDV
1.06
1.04
1.02
1.00
I
D
= 1 mA
0.98
0.96
-75 -25 25 75 125 175 T
J
(°C)
Figure 12. Normalized gate threshold vs temperature
V
GS(th)
(norm.)
GADG210420201039VTH
1.4
1.2
1.0
0.8
I
D
= 1mA
0.6
0.4
-75 -25 25 75 125 175 T
J
(°C)
DS14087 - Rev 1 page 6/12
SCTWA70N120G2V
Electrical characteristics (curves)
Figure 13. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GADG210420201039RON
2.5
2.0
V
GS
= 18 V
1.5
1.0
0.5
0.0
-75 -25 25 75 125 175 T
J
(°C)
Figure 14. Typical reverse conduction characteristics
(T
J
= 25 °C)
I
D
(A)
-30
V
GS
= -10 V
GADG210420201043RCC25
-60
V
GS
= 10 V
-90
-120
V
GS
= 0 V
-150
-180
-7 -6 -5 -4 -3 -2 -1 V
DS
(V)
Figure 15. Typical reverse conduction characteristics
(T
J
= 200 °C)
GADG210420201043RCC200 I
D
(A)
-30
V
GS
= -10 V
V
GS
= 0 V
-60
-90
-120
-150
V
GS
= 10 V
-180
-7 -6 -5 -4 -3 -2 -1 V
DS
(V)
Figure 16. Typical switching energy vs gate resistance
E(µJ)
2500
V
DD
V
GS
=800V, I
D
=50A
=-5 to 18V
GADG221220211619VTH
Etot
2000
1500
1000
500
0
0 2 4 6 8
Eoff
Eon
10 Rg(Ω)
DS14087 - Rev 1 page 7/12
3
3.1
SCTWA70N120G2V
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
HiP247 long leads package information
Figure 17. HiP247 long leads package outline
DS14087 - Rev 1
8463846_3 page 8/12
DS14087 - Rev 1
Dim.
E3 e
L
L1
P
Q
S aaa b3 c
D
E
E2
A
A1
A2 b b2
0.59
20.90
15.70
4.90
2.40
5.34
19.80
3.50
5.60
6.05
21.00
15.80
5.00
2.50
5.44
19.92
3.60
6.15
0.04
SCTWA70N120G2V
HiP247 long leads package information
Table 8. HiP247 long leads package mechanical data
Min.
4.90
2.31
1.90
1.16
mm
Typ.
5.00
2.41
2.00
Max.
2.60
5.54
20.10
4.30
3.70
6.00
6.25
0.10
2.25
0.66
21.10
15.90
5.10
5.10
2.51
2.10
1.26
3.25
page 9/12
Revision history
Date
10-Oct-2022
Revision
1
Table 9. Document revision history
Changes
First release.
SCTWA70N120G2V
DS14087 - Rev 1 page 10/12
SCTWA70N120G2V
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1
HiP247 long leads package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS14087 - Rev 1 page 11/12
SCTWA70N120G2V
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DS14087 - Rev 1 page 12/12
