STMicroelectronics VNN3NV04P-E Datasheet
Advertisement
Advertisement
Features
Type
VNN3NV04P-E
VNS3NV04P-E
R
DS(on)
120 m
Ω
I lim
3.5 A
V clamp
40 V
■
■
■
■
■
■
■
■
■
Linear current limitation
Thermal shutdown
Short circuit protection
Integrated clamp
Low current drawn from input pin
Diagnostic feedback through input pin
ESD protection
Direct access to the gate of the Power
MOSFET (analog driving)
Compatible with standard Power MOSFET in compliance with the 2002/95/EC European directive
VNN3NV04P-E
VNS3NV04P-E
OMNIFET II fully autoprotected Power MOSFET
Datasheet
−
production data
2
1
SOT-223
2
3
SO-8
Description
The VNN3NV04P-E, VNS3NV04P-E, are monolithic devices designed in
STMicroelectronics
®
VIPower
®
M0-3 Technology, intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
Table 1.
Package
SOT-223
SO-8
Device summary
Order codes
Tube
—
VNS3NV04P-E
Tape and reel
VNN3NV04PTR-E
VNS3NV04PTR-E
September 2013
This is information on a product in full production.
Doc ID 15626 Rev. 5 1/22
www.st.com
1
Contents
Contents
VNN3NV04P-E, VNS3NV04P-E
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/22 Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E
List of tables
List of tables
Doc ID 15626 Rev. 5 3/22
List of figures
List of figures
VNN3NV04P-E, VNS3NV04P-E
4/22 Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
DRAIN
2
Overvoltage
Clamp
INPUT
1
Gate
Control
Over
Temperature
Linear
Current
Limiter
3
SOURCE
FC01000
Figure 2.
Configuration diagram (top view)
SO-8 Package
(1)
1
SOURCE
SOURCE
SOURCE
INPUT
4
8
5
DRAIN
DRAIN
DRAIN
DRAIN
1.
For the pins configuration related to SOT-223 see outlines at page 1.
Doc ID 15626 Rev. 5 5/22
Electrical specifications VNN3NV04P-E, VNS3NV04P-E
Figure 3.
Current and voltage conventions
I
IN
R
IN
INPUT
DRAIN
SOURCE
I
D
V
IN
V
DS
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
IN
I
IN
R
IN MIN
I
D
I
R
V
ESD1
V
ESD2
P tot
T j
T c
T stg
Drain-source voltage (V
IN
= 0 V)
Input voltage
Input current
Minimum input series impedance
Drain current
Reverse DC output current
Electrostatic discharge (R = 1.5 K
Ω
, C = 100 pF)
Electrostatic discharge on output pin only
(R = 330
Ω
, C = 150 pF)
Total dissipation at T c
= 25 °C
Operating junction temperature
Case operating temperature
Storage temperature
Value
SOT-223 SO-8
Internally clamped
Internally clamped
+/-20
220
Internally limited
-5.5
4000
16500
7 8.3
Internally limited
Internally limited
-55 to 150
Unit
V
W
°C
°C
°C
V
V mA
Ω
A
A
V
6/22 Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E Electrical specifications
Table 3.
Thermal data
Value
Symbol Parameter Unit
SOT-223 SO-8
R thj-case
Thermal resistance junction-case max 18 °C/W
R thj-lead
Thermal resistance junction-lead max 15 °C/W
R thj-amb
Thermal resistance junction-ambient max 70
(1)
65
(1)
°C/W
1.
When mounted on a standard single-sided FR4 board with 50 mm
2
of Cu (at least 35 mm thick) connected to all DRAIN pins.
Table 4.
Symbol
-40°C < T j
< 150°C, unless otherwise specified.
Electrical characteristics
Parameter Test conditions Min Typ Max Unit
Off
V
CLAMP
V
V
V
I
I
CLTH
INTH
ISS
INCL
DSS
Drain-source clamp voltage V
IN
= 0 V; I
D
= 1.5 A 40
Drain-source clamp threshold voltage
V
IN
= 0 V; I
D
= 2 mA 36
45 55
Input threshold voltage V
DS
= V
IN
; I
D
= 1 mA 0.5
Supply current from input pin V
DS
= 0 V; V
IN
= 5 V 100
6 6.8
Input-source clamp voltage
I
IN
= 1 mA
I
IN
= -1 mA -1.0
Zero input voltage drain current (V
IN
= 0 V)
2.5
150
8
-0.3
V
DS
= 13 V; V
IN
= 0 V; T j
= 25°C 30
V
DS
= 25 V; V
IN
= 0 V 75
On
R
DS(on)
Dynamic (T j
=25 °C, unless otherwise specified)
g fs
(1)
C
OSS
Forward transconductance
Output capacitance
V
V
DD
DS
= 13 V; I
D
= 1.5 A
= 13 V; f = 1 MHz; V
IN
5.0
= 0 V 150
Switching (T j
= 25°C, unless otherwise specified)
t d(on) t r t d(off) t f
Static drain-source on resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
IN
= 5 V; I
D
= 1.5 A; T j
= 25°C
V
IN
= 5 V; I
D
= 1.5 A
V
DD
R gen
= 15 V; I
= R
D
IN MIN
= 1.5 A; V gen
= 5 V;
= 220
Ω
90
250
450
250
120
240
300
750
1350
750
V
V ns ns ns ns
V
µA
µA
V
µA
V m m
S
Ω
Ω pF
Doc ID 15626 Rev. 5 7/22
Electrical specifications VNN3NV04P-E, VNS3NV04P-E
Table 4.
Symbol
Electrical characteristics (continued)
Parameter Test conditions Min
t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
R
DD gen
= 15 V; I
D
= 1.5 A; V gen
= 2.2 K
Ω
(see
)
= 5 V;
(dI/dt)
Q
Turn-on current slope
Total input charge
Source drain diode (T j
=25°C, unless otherwise specified)
V
SD
(1)
Forward on voltage I
SD
= 1.5 A; V
IN
= 0 V t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
RRM
Reverse recovery current
I
SD
V
DD
= 1.5 A; dI/dt = 12 A/µs;
= 30 V; L = 200 µH
(see
)
Protections (-40°C < T j
< 150°C, unless otherwise specified)
I lim t dlim
T jsh
T jrs
I gf
E i as on
Drain current limit
Step response current limit
Fault sink current
Single pulse avalanche energy
V
DD
R gen
= 15 V; I
D
= R
IN MIN
= 1.5 A; V gen
= 220
Ω
= 5 V;
I
V
DD gen
= 12 V; I
D
= 1.5 A; V
IN
= 5 V;
= 2.13 mA (see
)
V
IN
= 5 V; V
DS
= 13 V 3.5
V
IN
= 5 V; V
DS
= 13 V
150
V
IN
= 5 V; V
DS
= 13 V; T j
= T jsh starting T
V
IN j
= 25°C; V
= 5 V; R gen
= R
DD
= 24 V;
IN MIN
= 220
Ω;
and
)
135
10
100
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
8.5
0.8
107
37
0.7
Typ Max Unit
0.45
1.35
2.5
7.5
3.3
10.0
2.0
6.0
µs
µs
µs
µs
4.7
A/µs nC
5
10
175
15
7
200
20
A
µs
°C
°C mA
V ns
µC
A mJ
8/22 Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E Protection features
During normal operation, the input pin is electrically connected to the gate of the internal
Power MOSFET through a low impedance path.
The device then behaves like a standard Power MOSFET and can be used as a switch from
DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current
I
ISS
(typ. 100 µA) flows into the input pin in order to supply the internal circuitry.
The device integrates:
●
●
●
●
Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
Linear current limiter circuit: limits the drain current I
D
to I lim
whatever the input pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the over temperature threshold T jsh
.
Overtemperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150°C to 190°C, a typical value being 170°C. The device is automatically restarted when the chip temperature falls of about 15°C below shutdown temperature.
Status feedback: in the case of an overtemperature fault condition (T j
> T jsh
), the device tries to sink a diagnostic current I gf
through the input pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the input pin driver is not able to supply the current I gf
, the input pin will fall to 0 V.
This will not however affect the device operation: no requirement is put on the current capability of the input pin driver except to be able to supply the normal operation drive current I
ISS
.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL logic circuit.
Doc ID 15626 Rev. 5 9/22
Protection features
Figure 4.
Switching time test circuit for resistive load
VNN3NV04P-E, VNS3NV04P-E
I
D
V gen t d(on) t r
V
D
V gen
90%
R gen
10% t d(off) t f
t t
Figure 5.
Test circuit for diode recovery times
A
A
220
Ω
D
I
OMNIFET
S
B
FAST
DIODE
B
R gen
I
OMNIFET
D
L=100uH
V
DD
V gen
S
8.5
Ω
10/22 Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E
Figure 6.
Unclamped inductive load test circuits
Protection features
Figure 7.
Input charge test circuit
Figure 8.
Unclamped inductive waveforms
V
IN
GEN
ND8003
Doc ID 15626 Rev. 5 11/22
Protection features VNN3NV04P-E, VNS3NV04P-E
Figure 9.
Thermal impedance for SOT-223 Figure 10.
Derating curve
Figure 11.
Transconductance
Gfs (S)
11
6
5
4
3
2
1
0
0
10
9
8
7
Vds=13V
0.5
1 1.5
2 2.5
Id (A)
3
Tj=-40ºC
Tj=25ºC
Tj=150ºC
3.5
4 4.5
5 5.5
Figure 13.
Static drain-source on resistance vs input voltage (part 2/2)
Rds(on) (mohms)
250
225
200
175
150
125
100
75
50
25
0
3 3.5
4 4.5
Vin(V)
5
Id=1.5A
Tj=150ºC
Tj=25ºC
Tj=-40ºC
5.5
6 6.5
Figure 12.
Static drain-source on resistance vs input voltage (part 1/2)
Rds(on) (mohms)
300
275
250
225
200
175
150
125
100
75
50
25
0
Tj=150ºC
Tj=25ºC
Tj=-40ºC
3 3.5
4 4.5
Vin(V)
5 5.5
6
Id=3.5A
Id=1A
Id=3.5A
Id=1A
Id=3.5A
Id=1A
6.5
Figure 14.
Source-drain diode forward characteristics
Vsd (mV)
1100
1050
1000
950
900
850
800
750
700
650
600
0 1
Vin=0V
2 3 4 5 6
Id (A)
7 8 9 10 11 12
12/22 Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E Protection features
Figure 15.
Static drain source on resistance Figure 16.
Turn-on current slope (part 1/2)
1.5
1
0.5
0
0
3.5
3
2.5
2
Rds(on) (ohms)
4.5
4
Vin=2.5V
Tj=-40ºC
0.05
0.1
0.15
Id(A)
0.2
0.25
Tj=25ºC
Tj=150ºC
0.3
di/dt(A/us)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Vin=5V
Vdd=15V
Id=1.5A
250 500 750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm)
Figure 17.
Turn-on current slope (part 2/2)
di/dt(A/usec)
1.75
1.5
1.25
1
0.75
0.5
Vin=3.5V
Vdd=15V
Id=1.5A
0.25
0
0 250 500 750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm)
Figure 18.
Transfer characteristics
Idon(A)
2.25
2
1.75
1.5
1.25
1
0.75
0.5
0.25
Vds=13.5V
Tj=150ºC
Tj=-40ºC
Tj=25ºC
0
1.5
1.75
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
4.25
4.5
4.75
5
Vin(V)
Figure 19.
Static drain-source on resistance
vs Id
Rds(on) (mohms)
250
225
200
175
150
125
100
75
50
25
0
0 0.5
Vin=5V
1 1.5
2
Id (A)
2.5
Tj=150ºC
Tj=25ºC
Tj= - 40ºC
3 3.5
4
Figure 20.
Input voltage vs input charge
Vin (V)
6
5
4
3
2
1
0
0 1
Vds=12V
Id=0.5A
2 3
Qg (nC)
4 5 6
Doc ID 15626 Rev. 5 13/22
Protection features VNN3NV04P-E, VNS3NV04P-E
Figure 21.
Turn-off drain source voltage slope
(part 1/2)
Figure 22.
Turn-off drain source voltage slope
(part 2/2)
225
200
175
150
125
100
75 dv/dt(V/usec)
300
275
250
50
25
0
0
250
500
Vin=5V
Vdd=15V
Id=1.5A
750
1000
1250
1500
1750
2000
2250
2500
Rg(ohm)
150
125
100
75
50
25
0 dv/dt(V/usec)
300
275
250
225
200
175
0
250
Vin=3.5V
Vdd=15V
Id=1.5A
500
750
1000
1250
1500
1750
2000
2250
2500
Rg(ohm)
Figure 23.
Capacitance variations
C(pF)
350
300
250
200
150
100
50
0 5 10 15
Vds(V)
20
f=1MHz
Vin=0V
25 30 35
Figure 24.
Output characteristics
Id (A)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 1 2 3 4 5
Vds (V)
6
Vin=5V
Vin=4V
7
Vin=3V
8 9 10
Figure 25.
Normalized on resistance vs
temperature
Rds(on) (mOhm)
4
3.5
Vin=5V
Id=1.5A
3
2.5
2
1.5
1
0.5
-50 -25 0 25 50 75
Tc )ºC)
100 125 150 175
Figure 26.
Switching time resistive load
(part 1/2)
v t(usec)
4
3.5
3
2.5
2
1.5
1
0.5
Vdd=15V
Id=1.5A
Vin=5V td(off) tr tf td(on)
0
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
Rg(ohm)
14/22 Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E Protection features
Figure 27.
Switching time resistive load
(part 2/2)
t(nsec)
900
800
700
600
tr
500
400
td(off)
300
200
100
0
3.25
tf td(on)
3.5
3.75
Vdd=15V
Id=1.5A
Rg=220ohm
4 4.25
Vin(V)
4.5
4.75
5 5.25
Figure 28.
Normalized input threshold voltage
vs temperature
0.8
0.6
0.4
0.2
0
-50
1.6
1.4
1.2
1
Vinth (V)
2
1.8
-25
Vds=Vin
Id=1mA
0 25 50 75
Tc (ºC)
100 125 150 175
Figure 29.
Normalized current limit vs junction temperature
Figure 30.
Step response current limit
7
6
5
4
3
Ilim (A)
10
9
8
2
1
0
-50 -25
Vin=5V
Vds=13V
0 25 50 75
Tc (ºC)
100 125 150 175
Tdlim(usec)
13
12.5
12
11.5
11
10.5
10
9.5
9
8.5
8
7.5
Vin=5V
Rg=220ohm
5 7.5
10 12.5
15 17.5
20 22.5
25 27.5
30 32.5
Vdd(V)
Doc ID 15626 Rev. 5 15/22
Package and packing information
4 Package and packing information
VNN3NV04P-E, VNS3NV04P-E
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at:
www.st.com
.
ECOPACK
®
is an ST trademark.
Table 5.
SOT-223 mechanical data
Symbol
Min.
c
D e e1
E
A
B
B1
H
V
A1
0.6
2.9
0.24
6.3
3.3
6.7
0.02
Figure 31.
SOT-223 package dimensions
Millimeters
Typ.
0.7
3
0.26
6.5
2.3
4.6
3.5
7
10 (max)
3.7
7.3
0.1
Max.
1.8
0.85
3.15
0.35
6.7
16/22 Doc ID 15626 Rev. 5
0046067
VNN3NV04P-E, VNS3NV04P-E Package and packing information
Table 6.
SO-8 mechanical data
Millimeters
Symbol
Min Typ
A a1 a2 a3
0.1
b
0.65
0.35
A
A1 0.10
A2 1.25
b 0.28
c 0.17
D
(1)
4.80
E
E1
(2)
5.80
3.80
4.90
6.00
3.90
Max
1.75
0.25
1.65
0.85
0.48
1.75
0.25
0.48
0.23
5.00
6.20
4.00 h 0.25
L 0.40
L1 k 0° ccc
1.04
0.50
1.27
8°
0.10
1.
Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both side).
2.
Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25 mm per side.
Doc ID 15626 Rev. 5 17/22
Package and packing information
Figure 32.
SO-8 package dimensions
VNN3NV04P-E, VNS3NV04P-E
0016023 D
18/22 Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E
4.3 SOT-223 packing information
Package and packing information
Figure 33.
SOT-223 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
12.4
60
18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
12
4
8
D (± 0.1/-0)
1.5
D1 (min)
F (± 0.05)
1.5
5.5
K (max)
P1 (± 0.1)
4.5
2
All dimensions are in mm.
End
Top cover tape
No components
500mm min
Components No components
Empty components pockets saled with cover tape.
500mm min
User direction of feed
Start
Doc ID 15626 Rev. 5 19/22
Package and packing information
4.4
VNN3NV04P-E, VNS3NV04P-E
SO-8 packing information
Figure 34.
SO-8 tube shipment (no suffix)
B
C
A
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
100
2000
532
3.2
6
0.6
All dimensions are in mm.
Figure 35.
SO-8 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
2500
2500
330
1.5
13
20.2
12.4
60
18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
12
4
P
8
D (± 0.1/-0)
1.5
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
1.5
5.5
4.5
2
All dimensions are in mm.
End
Top cover tape
No components
500mm min
Components No components
Empty components pockets saled with cover tape.
500mm min
User direction of feed
Start
20/22 Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E
Table 7.
Date
Document revision history
Revision
24-May-2009
21-Jul-2009
29-Sep_2009
10-May-2012
18-Sep-2013
1
2
3
4
5
Changes
Initial release.
Updated
Table 1: Device summary
.
Removed target specification on cover page.
Updated
Table 2: Absolute maximum ratings
– R
IN MIN
: changed unit to
Ω
(it was W)
Updated Disclaimer.
Revision history
Doc ID 15626 Rev. 5 21/22
VNN3NV04P-E, VNS3NV04P-E
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2013 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
22/22 Doc ID 15626 Rev. 5
Download
Public link updated
The public link to your chat has been updated. You may view and manage your chat links after registration here.
Document public link
Advertisement