STMicroelectronics BUF420AW Datasheet

Below you will find brief information for high voltage fast-switching NPN power transistor BUF 420AW. The BUF420AW is a high voltage fast-switching NPN power transistor manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications.

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BUF 420AW Datasheet | Manualzz

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Key features

  • High voltage capability

  • Very high switching speed

  • Minimum lot-to-lot spread for reliable operation

  • Low base-drive requirements

  • Cellular Emitter structure

  • Planar edge termination

  • Wide RBSOA

  • High-frequency power supplies

  • Motor control applications

Frequently asked questions

The maximum collector-emitter voltage (VCEV) is 1000V.

The maximum operating junction temperature (Tj) is 150°C.

The thermal resistance junction-case (Rthj-case) is 0.63°C/W.

The typical collector cut-off current (ICER) is 1mA.

The typical collector emitter saturation voltage (VCE(sat)) is 0.9V.

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