®
BUF420AW
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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■
■
■
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STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
■
SWITCH MODE POWER SUPPLIES
■
MOTOR CONTROL
DESCRIPTION
The BUF420AW is manufactured using High
Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
The BUF series is designed for use in high-frequency power supplies and motor control applications.
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P tot
T stg
T j
Parameter
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t p
< 5 ms)
Base Current
Base Peak Current (t p
< 5 ms)
Total Dissipation at T c
= 25 o
C
Storage Temperature
Max. Operating Junction Temperature
March 2002
Value
1000
450
7
30
60
6
9
200
-65 to 150
150
Unit
V
V
A
A
V
A
A
W o
C o
C
1/8
BUF420AW
THERMAL DATA
R thj-case
Thermal Resistance Junction-Case Max 0.63
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter
I
I
CER
CEV
Collector Cut-off
Current (R
BE
= 5
Ω)
Collector Cut-off
Current (V
BE
= -1.5V)
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
Emitter Base Voltage
(I
C
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
V
V
V
BE(sat) di
CE
CE
V c t t t t t
(3
(5 t t t f s f c s t c s f c
/dt
µ
µ
CEW
∗
Base-Emitter s) s)
Saturation Voltage
Rate of rise on-state
Collector Current
Collector-Emitter
Dynamic Voltage
Collector-Emitter
Dynamic Voltage
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
Maximum Collector
Emitter Voltage without Snubber
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
Test Conditions
V
CE
= 1000 V
V
CE
= 1000 V T
C
= 100 o
C
V
CE
= 1000 V
V
CE
= 1000 V T
C
= 100 o
C
V
EB
= 5 V
I
C
= 200 mA L = 25 mH
I
E
= 50 mA
I
C
= 10A I
I
C
= 10 A I
B
= 1 A
B
= 1 A T
C
=100 o
C
I
C
= 20 A I
I
C
= 20 A I
B
= 4 A
B
= 4 A T
C
=100 o
C
I
I
C
C
= 10A I
= 10 A I
I
C
= 20 A I
I
C
= 20 A I
B
= 1 A
B
= 1 A T
C
=100 o
C
B
= 4 A
B
= 4 A T
C
=100 o
C
I
I
I
V
CC
B1
B1
B1
= 300 V R
= 1.5 A T
= 1.5 A T
= 6 A T
C
= 0 t p
C
C
=25 o
=100
C o
C
C
=100 o
C
= 3
µ s
I
I
V
CC
B1
B1
= 300 V R
= 1.5 A T
= 1.5 A T
C
C
C
= 60
Ω
=25 o
=100
C o
C
I
I
V
CC
B1
B1
= 300 V R
= 1.5 A T
C
= 1.5 A T
C
= 60
Ω
=25 o
C
C
=100 o
C
I
C
V
= 10 A V
BB
= - 5 V R
CC
BB
= 50 V
= 0.6
Ω
V clamp
= 400 V I
B1
= 1 A
L = 0.25 mH
I
C
V
= 10 A V
BB
= - 5 V R
CC
= 50 V
BB
= 0.6
Ω
V clamp
= 400 V I
L = 0.25 mH T
B1
= 1 A
C
=100 o
C
I
C
V
= 10 A V
BB
= - 5 V R
CC
= 50 V
BB
= 0.6
Ω
I
B1
T
C
= 1 A L = 0.25 mH
=125 o
C
I
C
= 10 A V
V
BB
= 0 R
CC
BB
= 50 V
= 0.15
Ω
V clamp
= 400 V I
B1
= 1 A
L = 0.25 mH
450
7
70
150
500
Typ.
0.8
0.5
0.9
1.1
100
2.1
1.1
1
0.05
0.08
1.5
0.04
0.07
Max.
0.2
1
0.2
1
1
2.8
2
1.5
1.5
8
4
2
0.1
0.18
o
C/W
V
V
V
V
V
V
V
V
V
V
A
/µ s
A
/µ s
A
/µ s
V
V
µ s
µ s
µ s
Unit mA mA mA mA mA
V
V
µ s
µ s
µ s
V
µ s
µ s
µ s
2/8
BUF420AW
ELECTRICAL CHARACTERISTICS (continued)
Symbol
V t t s t f c
CEW
Parameter
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
Maximum Collector
Emitter Voltage without Snubber t s t f t c t s t f t c
V
CEW
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
Maximum Collector
Emitter Voltage without Snubber
Test Conditions
I
C
V
= 10 A V
BB
= 0 R
CC
BB
= 50 V
= 0.15
Ω
V clamp
= 400 V I
L = 0.25 mH T
B1
C
= 1 A
=100 o
C
I
C
V
= 10 A V
BB
= 0 R
CC
BB
= 50 V
= 0.15
Ω
I
B1
T
C
= 1 A L = 0.25 mH
=125 o
C
I
C
V
= 20 A V
BB
= -5 V R
CC
BB
= 50 V
=0.6
Ω
V clamp
= 400 V I
B1
= 4 A
L = 0.12 mH
I
C
V
= 20 A V
BB
= - 5 V R
CC
BB
= 50 V
= 0.6
Ω
V clamp
= 400 V I
L = 0.12 mH T
B1
= 4 A
C
=125 o
C
I
CWoff
= 30 A V
V
BB
= - 5 V R
CC
= 50 V
BB
= 0.6
Ω
L = 0.12 mH I
T
C
=125 o
C
B1
= 6 A
Min.
500
400
Typ.
Max.
3
0.15
0.25
Unit
µ s
µ s
µ s
V
2.2
0.06
0.12
3.5
0.12
0.3
µ s
µ s
µ s
V
µ s
µ s
µ s
3/8
BUF420AW
DC Current Gain DC Current Gain
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
Forward Biased Safe Operating Area Reverse Biased Safe Operating Area
4/8
Storage Time Versus Pulse Time.
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
BUF420AW
5/8
BUF420AW
Turn-on Switching Test Waveforms.
Turn-off Switching Test Waveforms
(inductive load).
6/8
DIM.
F4
G
H
L
L3
L4
L5
M
A
D
E
F
F3
BUF420AW
MIN.
4.7
2.2
0.4
1
2
3
15.3
19.7
14.2
2
TO-247 MECHANICAL DATA
mm
TYP.
MAX.
5.3
2.6
0.8
1.4
2.4
3.4
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
10.9
15.9
20.3
14.8
0.602
0.776
0.559
34.6
5.5
3 0.079
inch
TYP.
0.429
1.362
0.217
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
0.626
0.779
0.582
0.118
P025P
7/8
BUF420AW
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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