STGY50NC60WD
50 A, 600 V, ultra fast IGBT
Features
■
■
■
Very high frequency operation
Low C
RES
/ C
IES susceptibility)
ratio (no cross-conduction
Very soft ultra fast recovery antiparallel diode
Applications
■
■
■
■
Very high frequency inverters, UPS
HF, SMPS and PFC in both hard switch and resonant topologies
Motor drivers
Welding
Description
This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Max247
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
STGY50NC60WD
Marking
GY50NC60WD
Package
Max247
Packaging
Tube
January 2009 Rev 5 1/14 www.st.com
14
3
4
5
1
2
Contents
Contents
STGY50NC60WD
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STGY50NC60WD Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V
CES
I
C
(1)
I
C
(1)
I
CL
(2)
I
CP
(3)
I
F
Collector-emitter voltage (V
GE
= 0)
Collector current (continuous) at T
C
= 25 °C
Collector current (continuous) at T
C
= 100 °C
Turn-off latching current
Pulsed collector current
I
FSM
Diode RMS forward current at T
C
= 25 °C
Surge not repetitive forward current (t p
=10 ms sinusoidal)
V
GE
P
TOT
T j
Gate-emitter voltage
Total dissipation at T
C
= 25 °C
Operating junction temperature
1.
Calculated according to the iterative formula:
I
C
(
T
C
) =
R thj – c
×
V
T
) ( max
–
)
(
T
C
T j max
)
,
I
C
(
T
C
) )
2.
V clamp
= 80% of V
CES
, T j
=150 °C, R
G
=10
Ω
, V
GE
=15 V
3.
Pulse width limited by max. temperature allowed
Value
600
110
50
180
180
30
120
±20
278
-55 to 150
Table 2.
Symbol
R thj-case
R thj-case
R thj-amb
Thermal resistance
Parameter
Thermal resistance junction-case IGBT max.
Thermal resistance junction-case diode max.
Thermal resistance junction-ambient max.
Value
0.45
1.5
50
Unit
°C/W
°C/W
°C/W
A
V
W
°C
Unit
A
A
A
V
A
A
3/14
Electrical characteristics STGY50NC60WD
(T
CASE
= 25 °C unless otherwise specified)
Table 3.
Symbol
Static
Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
V
V
CE(sat)
I
GE(th)
CES
Collector-emitter breakdown voltage
(V
GE
= 0)
I
C
= 1 mA
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 40 A
V
GE
= 15 V, I
C
= 40 A,T
C
=125 °C
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= 600 V
V
CE
= 600 V,T
C
= 125 °C
I
GES g fs
Gate-emitter leakage current (V
CE
= 0)
V
GE
= ±20 V
Forward transconductance V
CE
= 15 V
,
I
C
= 40 A
600
3.75
2.1
1.9
25
2.6
V
V
5.75
V
500
5
µA mA
±100
V nA
S
Table 4.
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
V
CE
= 390 V, I
C
= 40 A,
V
GE
= 15 V,
Figure 16
Min.
Typ.
Max.
Unit
4700
410
90
195
32
82 pF pF pF nC nC nC
4/14
STGY50NC60WD Electrical characteristics
Table 5.
Symbol t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope t r(Voff) t d(Voff) t f t r(Voff) t d(Voff) t f
Switching on/off (inductive load)
Parameter Test conditions t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390 V, I
C
= 40 A
R
G
= 10
Ω
, V
GE
= 15 V,
Figure 17
,
Figure 15
V
CC
= 390 V, I
C
= 40 A
R
G
= 10
Ω
, V
GE
= 15 V,
T
C
= 125 °C
Figure 17
,
Figure 15
V
CC
= 390 V, I
C
= 40 A
R
G
= 10
Ω
, V
GE
= 15 V,
Figure 17
,
Figure 15
V
CC
= 390 V, I
C
= 40 A
R
G
= 10
Ω
, V
GE
= 15 V,
T
C
= 125 °C
Figure 17
,
Figure 15
Min.
Typ.
Max. Unit
52
17
2400 ns ns
A/µs
50
19
2020
31
240
35
59
280
63 ns ns
A/µs ns ns ns ns ns ns
Table 6.
Symbol
Switching energy (inductive load)
Parameter Test conditions Min.
Typ.
Max. Unit
E on
(1)
E off
(2)
E ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
R
G
= 390 V, I
C
Figure 15
= 40 A
= 10
Ω
, V
GE
= 15 V,
365
560
925
470
790
1260
E
E on
(1) off
(2)
E ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390 V, I
C
= 40 A
R
G
= 10
Ω
, V
GE
= 15 V,
T
C
= 125 °C
Figure 15
635
910
1545
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in
Figure 18
If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
µJ
µJ
µJ
µJ
µJ
µJ
5/14
Electrical characteristics STGY50NC60WD
Table 7.
Symbol
V
F t rr
Q rr
I rrm t rr
Q rr
I rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
F
= 40 A
I
F
= 40 A, T
C
= 125 °C
I
F
= 40 A,V
R
= 50 V, di/dt = 100 A/
µ s
Figure 18
I
F
= 40 A,V
R
= 50 V,
T
C
=125 °C, di/dt = 100 A/
µ
s (
Figure 18
)
Min.
Typ. Max. Unit
3.2
2.2
55
100
3.6
164
525
6.4
V
V ns nC
A ns nC
A
6/14
STGY50NC60WD
Figure 1.
Output characteristics
Electrical characteristics
Figure 2.
Transfer characteristics
Figure 3.
Transconductance Figure 4.
Collector-emitter on voltage vs temperature
Figure 5.
Gate charge vs gate-source voltage Figure 6.
Capacitance variations
7/14
Electrical characteristics STGY50NC60WD
Figure 7.
Normalized gate threshold voltage vs temperature
Figure 8.
Collector-emitter on voltage vs collector current
Figure 9.
Normalized breakdown voltage vs temperature
Figure 10. Switching losses vs temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current
8/14
STGY50NC60WD
Figure 13. Turn-off SOA
Electrical characteristics
Figure 14. Forward voltage drop vs. forward current
120
110
100
90
8 0
70
60
50
40
3 0
20
10
0
IFM(A)
0 1
(M a xim u m v a l u e s )
(Typic a l v a l u e s )
2 3
VFM(V)
4
Tj=25°C
(M a xim u m v a l u e s )
5 6
9/14
Test circuit
3 Test circuit
Figure 15. Test circuit for inductive load switching
STGY50NC60WD
Figure 16. Gate charge test circuit
Figure 17. Switching waveform
V
CE
V
G
I C
Td(on)
Ton
Tr(Ion)
90 %
10 %
Tr(Voff)
Tcro ss
Td(off)
Toff
Tf
90 %
10 %
AM01504v1 AM01505v1
Figure 18. Diode recovery time waveform di/dt Q rr
I
F
90 %
10 % t a t rr t b
I
RRM
I
RRM t
V
F di/dt
AM01506v1 AM01507v1
10/14
STGY50NC60WD
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
11/14
Package mechanical data
Table 8.
Max247 mechanical data
Dim.
b2 c
D e
A
A1 b b1
E
L
L1
Figure 19. Max247 drawing
Min.
4.70
2.20
1.00
2.00
3.00
0.40
19.70
5.35
15.30
14.20
3.70
mm
Typ.
STGY50NC60WD
Max.
5.30
2.60
1.40
2.40
3.40
0.80
20.30
5.55
15.90
15.20
4.30
12/14
0094 33 0_Rev_D
STGY50NC60WD Revision history
Table 9.
Date
Document revision history
09-Oct-2006
07-May-2007
02-Jul-2007
04-Nov-2008
09-Jan-2009
Revision
1
2
3
4
5
Changes
Initial release.
Complete version
Modified value on
Table 2: Thermal resistance
Table 8: Max247 mechanical data
and
Figure 19: Max247 drawing
have been updated.
Figure 13: Turn-off SOA
has been updated.
13/14
STGY50NC60WD
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