STMicroelectronics N-channel 24V - 0.0062Ω - 60A - D²PAK STripFET™ III Power MOSFET Datasheet
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STB75NH02L
N-Channel 24V - 0.0062
Ω
- 60A - D
2
PAK
STripFET™ III Power MOSFET
General features
Type V
DSS
STB75NH02L
1.
Limited by package
24V
R
DS(on)
<0.008
Ω
■
■
■
■
R
DS(ON)
* Qg industry’s benchmark
Conduction losses reduced
Switching losses reduced
Low threshold device
I
D
60A
(1)
Description
The device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.
This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.
Applications
■ Switching application
1
3
D
2
PAK
Internal schematic diagram
Part number
STB75NH02LT4
Marking
B75NH02L
July 2006 Rev 3
Package
D²PAK
Packaging
Tape & Reel
1/13 www.st.com
13
Contents
Contents
STB75NH02L
2/13
STB75NH02L
Table 1.
Symbol
Absolute maximum ratings
Parameter
V spike
(1)
V
DS
V
GS
I
D
(2)
I
D
I
DM
(3)
P
TOT
(4)
Drain-source voltage rating
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
C
GS
= 0)
= 25°C
Derating factor
E
AS
(5)
Single pulse avalanche energy
T
J
T stg
Operating junction temperature storage temperature
1.
Garanted when external Rg = 4.7
Ω and t f
< t fmax
2.
Value limited by wire bonding
3.
Pulse width limited by safe operating area
4.
This value is rated according to R thJC
5.
Starting T
J
=25°C, Id = 30A, Vdd = 15V
C
C
= 25°C
= 100°C
Table 2.
Symbol
Thermal data
R thJC
R thJA
T l
Parameter
Thermal resistance junction-case max
Thermal resistance junction-amb max
Maximum lead temperature for soldering purpose
Electrical ratings
Value
30
24
± 20
60
53
240
80
0.53
360
-55 to 175
Unit
A
A
V
V
V
A
W
W/°C mJ
°C
Value
1.88
62.5
300
Unit
°C/W
°C/W
°C
3/13
Electrical characteristics STB75NH02L
(T
CASE
= 25 °C unless otherwise specified)
Table 3.
Symbol
On/off states
Parameter
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
Drain-source breakdown voltage
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
R
DS(on)
Static drain-source on resistance
Test conditions
I
D
= 25 mA, V
GS
= 0
V
DS
= 20 V,
V
DS
= 20 V,Tc = 125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 30 A
V
GS
= 5 V, I
D
= 30 A
Min.
24
1
Typ.
Max.
1
10
± 100
1.8
0.0062
0.008
0.008
0.014
Table 4.
Dynamic
Symbol Parameter g fs
(1)
C iss
C oss
C rss
Q g
Q gs
Q gd
R
G
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Input Resistance
Test conditions
V
DS
=10V, I
D
= 18A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, f=1 MHz, V
GS
=0
V
DD
=10V, I
D
= 60 A
V
GS
=5V
f=1MHz Gate DC Bias =0
Test Signal Level =20mV
Open Drain
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min.
Typ.
27
2050
545
70
17
7.7
3.5
1.1
Max.
22
Ω
Table 5.
Symbol
Switching times
Parameter Test conditions Min.
Typ.
Max.
Unit t d(on) t r
Turn-on delay time
V
DD
=10 V, I
D
=30 A,
R
G
=4.7
Ω, V
GS
=10V
12
200 ns ns t d(off) t f
Turn-off delay time fall time
V
DD
=10 V, I
D
=30A,
R
G
=4.7
Ω, V
GS
=10V
18
25 ns ns
Unit
S pF pF pF nC nC nC
Unit
V
µA
µA nA
V
Ω
Ω
4/13
STB75NH02L
Table 6.
Source drain diode
Symbol Parameter Test conditions
I
SD
I
SDM
V
SD
(1) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on Voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
I
SD
= 30 A, V
GS
= 0
I
SD
=60 A, di/dt = 100A/µs,
V
DD
=15 V, T
J
=150°C
Min.
Electrical characteristics
Typ.
36
35
3.6
Max.
60
240
1.3
Unit
A
A
V ns
µC
A
5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 1.
Safe operating area Figure 2.
Thermal impedance
STB75NH02L
Figure 3.
Output characteristics Figure 5.
Transfer characteristics
Figure 4.
Transconductance Figure 6.
Static drain-source on resistance
6/13
STB75NH02L Electrical characteristics
Figure 7.
Gate charge vs gate -source voltage Figure 10. Capacitance variations
Figure 8.
Normalized gate threshold voltage vs temperatute
Figure 11. Normalized on resistance vs
Temperature
Figure 9.
Source-drain diode forward characteristics
Figure 12. Normalized BVDSS vs temperature
7/13
Test circuits STB75NH02L
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for indictive load switching and diode recovery times
Figure 17. Unclamped inductive load test circuit
Figure 16. Unclamped inductive waveform
8/13
STB75NH02L
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
9/13
Package mechanical data STB75NH02L
DIM.
L
L2
L3
M
D1
E
E1
G
R
V2
B2
C
C2
D
A
A1
A2
B
10
4.88
15
1.27
1.4
2.4
0º
0.7
1.14
0.45
1.23
8.95
MIN.
4.4
2.49
0.03
D
2
PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
TYP
0.93
1.7
0.6
1.36
9.35
MAX.
4.6
2.69
0.23
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
8
10.4
0.393
8.5
5.28
15.85
1.4
1.75
3.2
0.192
0.590
0.050
0.055
0.094
0.4
4º inch
TYP.
0.315
0.334
0.015
0.208
0.625
0.055
0.068
0.126
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
10/13
1
STB75NH02L
5 Packing mechanical data
D
2
PAK FOOTPRINT
Packing mechanical data
TAPE AND REEL SHIPMENT
N
T
D
G
A
B
C
REEL MECHANICAL DATA
DIM.
mm inch
MIN.
MAX.
MIN.
MAX.
330 12.992
1.5
0.059
12.8
13.2
0.504
0.520
20.2
0795
24.4
26.4
0.960
1.039
100 3.937
30.4
1.197
TAPE MECHANICAL DATA
BASE QTY
1000
BULK QTY
1000
DIM.
mm inch
MIN.
MAX.
MIN.
MAX.
A0 10.5
10.7
0.413 0.421
B0 15.7
15.9
0.618 0.626
D 1.5
1.6
0.059 0.063
D1 1.59
1.61
0.062 0.063
E 1.65
1.85
0.065 0.073
F 11.4
11.6
0.449 0.456
K0 4.8
5.0
0.189 0.197
P0
P1
3.9
11.9
4.1
0.153 0.161
Obsolete Product(s) - Obsolete Product(s)
P2 1.9
2.1
0.075 0.082
R
T
W
50 1.574
0.25
0.35 0.0098 0.0137
23.7
24.3
0.933 0.956
* on sales type
11/13
Revision history
6 Revision history
Table 7.
Revision history
Date Revision
24-Oct-2005
15-Mar-2006
22-Jul-2006
1
2
3
Changes
Preliminary version
Complete version
New template, no content change
STB75NH02L
12/13
STB75NH02L
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