STMicroelectronics N-channel 55V - 3.2mΩ - 120A - D²PAK/TO-220 STripFET™ Power MOSFET Datasheet
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STB180N55F3
STP180N55F3
N-channel 55V - 3.2m
Ω
- 120A - D
2
PAK/TO-220
STripFET™ Power MOSFET
Features
Type V
DSS
STB180N55F3 55V
STP180N55F3 55V
R
DS(on)
I
D
3.5m
Ω 120A
(1)
3.8m
Ω 120A
(1)
1.
Value limited by wire bonding
■
■
Ultra low on-resistance
100% avalanche tested
Pw
330W
330W
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “single feature size™” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
Application
■ Switching applications
TO-220
1
2
3
1
3
D
2
PAK
Internal schematic diagram
Order codes
Obsolete Product(s) - Obsolete Product(s)
Part number Marking Package Packaging
D
2
PAK STB180N55F3 180N55F3 Tape & reel
STP180N55F3 180N55F3 TO-220 Tube
June 2007 Rev 2 1/14 www.st.com
14
Contents
Contents
STB180N55F3 - STP180N55F3
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Obsolete Product(s) - Obsolete Product(s)
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STB180N55F3 - STP180N55F3 Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
DM
(2)
P
TOT
Drain-source voltage (V
Gate-source voltage
GS
=0)
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
C
C
= 25°C
=100°C
Total dissipation at T
C
= 25°C
Derating factor dv/dt
(3) Peak diode recovery voltage slope
E
AS
(4)
T j
T stg
Single pulse avalanche energy
Operating junction temperature storage temperature
1.
Current limited by package.
2.
Pulse width limited by safe operating area.
3.
I
SD
< 120A, di/dt < 900A/µs, V
DD
< V
(BR)DSS
, T
J
< T
JMAX
4.
Starting Tj=25°C, Id=60A, Vdd=40V
Value
55
± 20
120
120
480
330
2.2
11
1000
-55 To 175
Table 2.
Symbol
Thermal data
Parameter TO-220 D²PAK Unit
Rthj-case Thermal resistance junction-case
Rthj-a
Thermal resistance junction-ambient max
Rthj-pcb
(1)
Thermal resistance junction-ambient max
62.5
--
0.45
--
50
°C/W
°C/W
°C/W
T l
Maximum lead temperature for soldering purpose
300
Obsolete Product(s) - Obsolete Product(s)
°C
Unit
V
V
A
A
A
W
W/°C
V/ns mJ
°C
3/14
Electrical characteristics STB180N55F3 - STP180N55F3
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
On/off states
Parameter Test conditions
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Drain-source breakdown voltage
I
D
= 250µA, V
GS
= 0
Zero gate voltage drain current (V
GS
= 0)
V
DS
= max rating,
V
DS
= max rating,@125°C
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA
Static drain-source on resistance
V
GS
= 10V, I
D²PAK
D
= 60A
TO-220
Min.
Typ.
Max.
Unit
55
2
2.9
3.2
10
100
± 200
4
3.5
3.8
V
µA
µA nA
V m
Ω m Ω
Table 4.
Symbol
Dynamic
Parameter Test conditions Min.
Typ.
Max.
Unit g fs
(1)
C iss
C oss
C rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
= 15V
,
I
D
= 60A
V
DS
= 25V, f = 1MHz,
V
GS
= 0
150
6800
1450
15 t d(on) t r t d(off) t f
Q g
Q gs
Q gd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 27.5V, I
D
= 60A
R
G
= 4.7
Ω
V
GS
= 10V
,
)
V
DD
= 44V, I
D
= 120A,
V
GS
= 10V,
)
25
150
110
50
100
30
26
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Obsolete Product(s) - Obsolete Product(s) nC nC nC ns ns ns ns
S pF pF pF
4/14
STB180N55F3 - STP180N55F3
Table 5.
Symbol
Source drain diode
Parameter Test conditions
I
I
SD
SDM
(1)
Source-drain current
Source-drain current
(pulsed)
V
I
SD
(2) t
Q rr rr
RRM
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=120A, V
GS
=0
I
SD
=120A, di/dt = 100A/µs,
V
DD
=35V, Tj=150°C
(see
)
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Electrical characteristics
Min.
Typ.
Max.
Unit
120
480
1.5
A
A
V
60
0.11
3.5
ns
µC
A
Obsolete Product(s) - Obsolete Product(s)
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Electrical characteristics STB180N55F3 - STP180N55F3
2.1 Electrical characteristics (curves)
Figure 1.
Safe operating area Figure 2.
Thermal impedance
Figure 3.
Output characteristics Figure 4.
Transfer characteristics
Figure 5.
Normalized B
VDSS
vs temperature Figure 6.
Static drain-source on resistance
Obsolete Product(s) - Obsolete Product(s)
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STB180N55F3 - STP180N55F3 Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
Obsolete Product(s) - Obsolete Product(s)
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Test circuit
3 Test circuit
Figure 12. Switching times test circuit for resistive load
STB180N55F3 - STP180N55F3
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load switching and diode recovery times
Figure 15. Unclamped Inductive load test circuit
Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
Obsolete Product(s) - Obsolete Product(s)
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STB180N55F3 - STP180N55F3
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
Obsolete Product(s) - Obsolete Product(s)
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Package mechanical data
DIM.
L
L2
L3
D1
E
E1
G
M
R
V2
A
A1
A2
B
B2
C
C2
D
STB180N55F3 - STP180N55F3
10
4.88
15
1.27
1.4
2.4
0º
MIN.
4.4
2.49
0.03
0.7
1.14
0.45
1.23
8.95
D
2
PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
TYP MAX.
4.6
2.69
0.23
0.93
1.7
0.6
1.36
9.35
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
8
10.4
0.393
8.5
5.28
15.85
1.4
1.75
3.2
0.192
0.590
0.050
0.055
0.094
0.4
4º inch
TYP.
0.315
0.334
0.015
0.208
0.625
0.055
0.068
0.126
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
Obsolete Product(s) - Obsolete Product(s)
1
10/14
STB180N55F3 - STP180N55F3
Dim
L1
L20
L 3 0
∅ P
Q e1
F
H1
J1
L
A b b 1 c
D
D1
E e
Package mechanical data
TO-220 mechanical data
Min
4.40
0.61
1.14
0.4
9
15.25
10
2.40
4.
9 5
1.2
3
6.20
2.40
1 3
3 .50
3 .75
2.65
mm
Typ
1.27
16.40
2 8 .
9 0
Max
4.60
0.
88
1.70
0.70
15.75
10.40
2.70
5.15
1.
3 2
6.60
2.72
14
3 .
93
3 .
8 5
2.
9 5
Min
0.17
3
0.024
0.044
0.01
9
0.6
0.
393
0.0
9 4
0.1
9 4
0.04
8
0.244
0.0
9 4
0.511
0.1
3 7
0.147
0.104
inch
Typ
0.050
0.645
1.1
3 7
Max
0.1
8 1
0.0
3 4
0.066
0.027
0.62
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
Obsolete Product(s) - Obsolete Product(s)
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Packaging mechanical data
5 Packaging mechanical data
D
2
PAK FOOTPRINT
STB180N55F3 - STP180N55F3
TAPE AND REEL SHIPMENT
G
N
T
A
B
C
D
REEL MECHANICAL DATA
DIM.
mm inch
MIN.
MAX.
MIN.
MAX.
330 12.992
1.5
0.059
12.8
13.2
0.504
0.520
20.2
0795
24.4
26.4
0.960
1.039
100 3.937
30.4
1.197
TAPE MECHANICAL DATA
BASE QTY
1000
BULK QTY
1000
DIM.
A0
B0
D
D1
E
F mm inch
MIN.
MAX.
MIN.
MAX.
10.5
10.7
0.413 0.421
15.7
15.9
0.618 0.626
1.5
1.6
0.059 0.063
1.59
1.61
0.062 0.063
1.65
1.85
0.065 0.073
11.4
11.6
0.449 0.456
K0
P0
4.8
3.9
5.0
0.189 0.197
4.1
0.153 0.161
P1 11.9
12.1
0.468 0.476
P2 1.9
2.1
0.075 0.082
R
T
W
50 1.574
0.25
0.35 0.0098 0.0137
23.7
24.3
0.933 0.956
* on sales type
12/14
STB180N55F3 - STP180N55F3
Table 6.
Date
Revision history
Revision
31-Jan-2007
01-Jun-2007
1
2
First version
Complete version
Changes
Revision history
Obsolete Product(s) - Obsolete Product(s)
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STB180N55F3 - STP180N55F3
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