STH36N60M6-7
N-channel 600 V, 0.085
Ω typ., 30 A MDmesh™ M6
Power MOSFET in a H²PAK-7 package
Datasheet - preliminary data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max. I
D
STH36N60M6-7 600 V 0.099 Ω 30 A
Reduced switching losses
Lower R
DS(on)
x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
High creepage package
Excellent switching performance thanks to the extra driving source pin
Applications
Switching applications
Description
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ
MOSFETs by STMicroelectronics. Compared with the previous MDmesh generation, M6 combines an excellent improvement to R
DS(on)
* area with one of the most effective switching behaviors available, and a user-friendly driving experience for maximum end-application efficiency.
Table 1: Device summary Obsolete Product(s) - Obsolete Product(s)
Order code Marking Package Packing
STH36N60M6-7 36N60M6 H²PAK-7 Tape & reel
December 2015 DocID028697 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/13 www.st.com
Contents
Contents
STH36N60M6-7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
3 Test circuits ..................................................................................... 6
4 Package information ....................................................................... 7
4.1
4.2
H2PAK-7 package information .......................................................... 7
H2PAK-7 packaging information ..................................................... 10
5 Revision history ............................................................................ 12
Obsolete Product(s) - Obsolete Product(s)
DocID028697 Rev 1 2/13
Electrical ratings STH36N60M6-7
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
GS
I
D
I
D
I
D
(1)
P
TOT
dv/dt
(2) dv/dt
(3)
T
J
T stg
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature
Storage temperature
Value
± 25
30
19
120
208
15
50
-55 to 150
V/ns
°C
Notes:
(1)
Pulse width limited by safe operating area
(2)
I
SD
≤ 30 A, di/dt ̤ 400 A/μs; V
DS peak
< V
(BR)DSS
, V
DD
= 400 V
(3)
V
DS
≤ 480 V
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-pcb
Thermal resistance junction-case max.
Thermal resistance junction-pcb max.
(1)
Value
0.6
30
Unit
°C/W
Notes:
(1)
When mounted on 1 inch² FR-4, 2 Oz copper board.
Symbol
Table 4: Avalanche characteristics
Parameter Value Unit
I
AR
Avalanche current, repetitive or not repetitive
(pulse width limited by T jmax
)
5
E
AS
Single pulse avalanche energy (starting T j
= 25°C, I
D
= I
AR
,
V
DD
= 50 V)
750
Obsolete Product(s) - Obsolete Product(s) mJ
A
Unit
V
A
A
A
W
3/13 DocID028697 Rev 1
Electrical characteristics
2 Electrical characteristics
C iss
C oss
C rss
C oss
eq.
(1)
R
G
Q g
Q gs
STH36N60M6-7
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 5: On/off-state
Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V;
T
C
= 125 °C
I
GSS
Gate body leakage current
V
GS(th)
Gate threshold voltage
V
DS
V
DS
= 0 V, V
= V
GS
, I
GS
D
= ±25 V
= 250 µA
600
2
R
DS(on)
Static drain-source on-resistance V
GS
= 10 V, I
D
= 15 A
Symbol Parameter
Table 6: Dynamic
Test conditions
V
1 µA
100 µA
±10 µA
3 4 V
0.085 0.099 Ω
Min. Typ. Max. Unit
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
V
DS
= 0 to 480 V, V
GS
= 0
V f = 1 MHz open drain
V
DD
= 480 V, I
D
= 30 A,
V
GS
= 10 V,
(See Figure 3: "Test circuit for gate charge behavior" )
-
-
-
-
-
-
-
-
1800
140
2.8
317
1.4
48
8
23
-
-
-
-
-
-
-
- pF pF pF pF
Ω nC nC nC
Notes:
(1)
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to 80% V
DSS
Symbol Parameter
Table 7: Switching times
Test conditions Min. Typ. Max. Unit t t d(on) t r d(off)
Turn-on delay time
Rise time
Turn-off delay time
V
DD
= 300 V, I
D
= 15 A, R
G
= 4.7 Ω,
V
GS
= 10 V (See Figure 2: "Test circuit and Figure 7: "Switching time
-
-
-
16
10
7
-
-
- t f
Fall time
waveform" )
- 60 - ns ns ns ns
4/13 DocID028697 Rev 1
STH36N60M6-7
Symbol Parameter
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t
Q rr rr
I
RRM t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 8: Source-drain diode
Test conditions
I
I
SD
SD
V
I
SD
= 30 A, V
DD
GS
= 0 V
= 30 A, di/dt = 100 A/µs,
= 60 V, (See
= 30 A, di/dt = 100 A/µs,
V
DD
= 60 V, T j
= 150 °C
(See Figure 7: "Switching time waveform" )
Figure 7:
"Switching time waveform" )
Electrical characteristics
-
-
-
-
-
-
-
Min. Typ. Max. Unit
- 30 A
- 120 A
340
5.3
31
430
7.7
36
1.6 V ns
µC
A ns
µC
A
Notes:
(1)
Pulse width limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Obsolete Product(s) - Obsolete Product(s)
5/13 DocID028697 Rev 1
Test circuits
3 Test circuits
Figure 2: Test circuit for resistive load switching times
STH36N60M6-7
Figure 3: Test circuit for gate charge behavior
Figure 4: Test circuit for inductive load switching and diode recovery times
Figure 5: Unclamped inductive load test circuit
Figure 6: Unclamped inductive waveform Figure 7: Switching time waveform
Obsolete Product(s) - Obsolete Product(s)
6/13 DocID028697 Rev 1
STH36N60M6-7
4
4.1
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
H
2
PAK-7 package information
Figure 8: H²PAK-7 package outline
Obsolete Product(s) - Obsolete Product(s)
7/13 DocID028697 Rev 1
Package information
Dim.
H
H1
L
L1
L2
L3
M
R
V e1 e2
E
F
A
A1
C e
Table 9: H²PAK-7 package mechanical data mm
Min. Typ.
10.00
7.40
14.75
1.27
4.35
6.85
1.90
0.20
0°
4.30
0.03
1.17
2.34
4.88
7.42
0.45
0.50
-
STH36N60M6-7
Max.
10.40
7.60
15.25
1.40
4.95
7.25
2.50
0.60
8°
4.80
0.20
1.37
2.74
5.28
7.82
0.60
0.70
Obsolete Product(s) - Obsolete Product(s)
8/13 DocID028697 Rev 1
STH36N60M6-7
Figure 9: H²PAK-7 recommended footprint
Package information
Dimensions are in mm.
Obsolete Product(s) - Obsolete Product(s)
9/13 DocID028697 Rev 1
Package information
4.2 H
2
PAK-7 packaging information
Figure 10: Tape outline
STH36N60M6-7
Figure 11: Reel outline
T
REE L DIMENS IONS
40 mm min.
Acc ess ho le
At slot location
B
D Obsolete Product(s) - Obsolete Product(s)
C
N
A
G mea sured
At hu b
Full rad ius
Tape slot
In core for
Tape start
10/13 DocID028697 Rev 1
STH36N60M6-7
Dim.
P1
P2
R
T
W
A0
B0
D
D1
E
F
K0
P0
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
1.65
11.4
4.8
3.9
Tape
Package information
Table 10: Tape and reel mechanical data
Reel mm mm
Dim.
Min. Max. Min. Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
0.35
24.3
A
B
C
D
G
1.5
12.8
20.2
24.4
N
T
100
Base quantity
Bulk quantity
330
13.2
26.4
30.4
1000
1000
Obsolete Product(s) - Obsolete Product(s)
11/13 DocID028697 Rev 1
Revision history
5
STH36N60M6-7
Revision history
Date
14-Dec-2015
Table 11: Document revision history
Revision
1
Changes
Initial release.
Obsolete Product(s) - Obsolete Product(s)
12/13 DocID028697 Rev 1
STH36N60M6-7
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics
– All rights reserved
Obsolete Product(s) - Obsolete Product(s)
13/13 DocID028697 Rev 1
