STI23NM60ND
N-channel 600 V, 0.150
Ω
typ., 19.5 A, FDmesh™ II Power MOSFET
(with fast diode) in a I²PAK package
Datasheet — production data
Features
Order code
STI23NM60ND
V
DSS
@
T
Jmax
R
DS(on) max
I
D
650 V < 0.180 Ω 19.5 A
■
■
■
■
■
The worldwide best R
DS(on)
* area amongst the fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
High dv/dt and avalanche capabilities
TAB
I²PAK
1
2
3
Figure 1.
Internal schematic diagram
$4!"
Applications
■ Switching applications
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
'
3
!-V
Obsolete Product(s) - Obsolete Product(s)
Table 1.
Device summary
Oreder codes Marking Package Packaging
STI23NM60ND 23NM60ND TO-220FP Tube
January 2013
This is information on a product in full production.
Doc ID 024117 Rev 1 1/12 www.st.com
12
3
4
5
1
2
Contents
Contents
STI23NM60ND
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Obsolete Product(s) - Obsolete Product(s)
2/12 Doc ID 024117 Rev 1
STI23NM60ND Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter Value
V
V
I
DM
(1)
P
I
I
DS
GS
D
I
D
TOT
AS
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
600
± 25
19.5
11.7
78
150
9
E
AS dv/dt
(2)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AS
, V
DD
= 50 V)
Peak diode recovery voltage slope
700
40
T stg
T j
Storage temperature
Max. operating junction temperature
1.
Pulse width limited by safe operating area
2.
I
SD
≤ ≤
600 A/µs, V
DD
=80% V
(BR)DSS,
V
DS(peak)
< V
(BR)DSS
-55 to 150
150
Table 3.
Symbol
Thermal data
Parameter
R thj-case
R thj-amb
R thj-pcb
Thermal resistance junction-case max
Thermal resistance junction-amb max
Thermal resistance junction-pcb max
1.
When mounted on 1 inch² FR-4, 2 Oz copper board.
(1)
Value
0.83
62.5
Unit
°C/W
°C/W
°C/W mJ
V/ns
°C
°C
Unit
A
A
A
V
V
W
A
Obsolete Product(s) - Obsolete Product(s)
Doc ID 024117 Rev 1 3/12
Electrical characteristics STI23NM60ND
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol Parameter Test conditions
V
(BR)DSS
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0 dv/dt
V
R
I
I
(1)
DSS
GSS
GS(th)
DS(on)
Drain-source voltage slope
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
V
DD
= 480 V, I
D
= 19.5 A,
V
GS
= 10 V
V
V
V
V
V
DS
DS
GS
DS
GS
1.
Characteristic value at turn off on inductive load
= 600 V,
= 600 V, T
= ±20 V
= V
GS
, I
= 10 V, I
D
D c
=125 °C
= 250 µA
= 10 A
Min.
Typ.
Max.
Unit
600 V
3
30
4 5
0.150
0.180
V/ns
1
100
µA
µA
±100 nA
V
Ω
Table 5.
Symbol
Dynamic
Parameter Test conditions Min.
Typ.
Max.
Unit
C
C
C iss oss rss
Input capacitance
Output capacitance
Reverse transfer capacitance
C oss eq.
(1)
Equivalent output capacitance
V
DS
= 50 V, f =1 MHz,
V
GS
= 0
V
GS
= 0, V
DS
= 0 to 480 V -
-
2100
80
10
310 -
-
Rg Gate input resistance f=1 MHz Gate DC Bias=0
Test signal level=20 mV open drain
4 -
Total gate charge 69 Q g
V
DD
= 480 V, I
D
= 19.5 A
Q gs
Q gd
V
GS
= 10 V Gate-source charge 13
Obsolete Product(s) - Obsolete Product(s)
1.
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss increases from 0 to 80% V
DSS
when V
DS nC nC nC
Ω pF pF pF pF
4/12 Doc ID 024117 Rev 1
STI23NM60ND
Table 6.
Symbol t d(on) t r t d(off) t f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics
Test conditions
V
DD
= 300 V, I
D
= 10 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13)
Min.
Typ.
Max. Unit
-
21
19
92
42
ns ns ns ns
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 19.5 A, V
GS
=0
I
SD
= 19.5 A, di/dt =100
A/µs, V
DD
= 60 V
(see Figure 15)
I t
Q rr rr
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
V
DD
= 60 V di/dt =100 A/µs, I
SD
= 19.5
A T j
= 150 °C
(see Figure 15)
Min.
Typ.
Max.
Unit
-
-
19.5
78
1.3
-
190
1.2
13
A
A
V ns
µC
A
-
270
2.0
15 ns
µC
A
Obsolete Product(s) - Obsolete Product(s)
Doc ID 024117 Rev 1 5/12
Electrical characteristics
Figure 2.
Safe operating area Figure 3.
Thermal impedance
STI23NM60ND
Figure 4.
Output characteristics
I
D
(A)
V
G S
=10V
50
7V
40
6V
3 0
AM14794v1
Figure 5.
Transfer characteristics
I
D
(A)
50
40
V
D S
= 20 V
AM14795v1
3 0
20
20
10
5V
10
0
0 5 10 15 20 25 3 0 V
D S
(V)
0
0 2 4 6 8 V
G S
(V)
Figure 6.
Static drain-source on resistance Figure 7.
Gate charge vs gate-source voltage
AM015 3 7v1
V
G S
(V)
12
V
DD
=4 8 0V
I
D
=19.5A
10
6
4
2
0
0 20 40 60 8 0 Q g
(nC)
6/12 Doc ID 024117 Rev 1
STI23NM60ND Electrical characteristics
Figure 8.
Capacitance variations
C
(pF)
10000
1000
AM015 38 v1
Ci ss
Figure 9.
Normalized gate threshold voltage vs temperature
100
10
1
0.1
1 10 100 V
D S
(V)
Figure 10.
Normalized on-resistance vs temperature
Co ss
Cr ss
Figure 11.
Source-drain diode forward characteristics
Figure 12.
Normalized B
VDSS
vs temperature
AM0902 8 v1
V
D S
(norm)
I
D
=1mA
1.10
1.0
8
1.06
Obsolete Product(s) - Obsolete Product(s)
1.02
1.00
0.9
8
0.96
0.94
0.92
-50 -25 0 25 50 75 100 T
J
(°C)
Doc ID 024117 Rev 1 7/12
STI23NM60ND Test circuits
3 Test circuits
Figure 13.
Switching times test circuit for resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
μ
F
3 .
3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CON S T
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 15.
Test circuit for inductive load switching and diode recovery times
Figure 16.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 μ H
3 .
3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3 .
3
μ F
V
DD
P w
AM01470v1
Figure 17.
Unclamped inductive waveform Figure 18.
Switching time waveform
AM01471v1 t on t off V
(BR)D SS t r
V
D
Obsolete Product(s) - Obsolete Product(s)
90 %
90 %
I
DM td on td off t f
10 %
10 % V
D S
I
D 0
V
DD
V
DD
90 %
V
G S
0
10 %
AM01472v1 AM0147 3 v1
8/12 Doc ID 024117 Rev 1
STI23NM60ND
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Obsolete Product(s) - Obsolete Product(s)
Doc ID 024117 Rev 1 9/12
Package mechanical data
Table 8.
I²PAK (TO-262) mechanical data
DIM.
E
L
L1
L2
D e e1
A
A1 b b1 c c2
Figure 19.
I²PAK (TO-262) drawing min.
8.95
2.40
4.95
10
13
3.50
1.27
4.40
2.40
0.61
1.14
0.49
1.23
mm.
typ
STI23NM60ND max.
9.35
2.70
5.15
10.40
14
3.93
1.40
4.60
2.72
0.88
1.70
0.70
1.32
Obsolete Product(s) - Obsolete Product(s)
00049 8 2_Rev_H
10/12 Doc ID 024117 Rev 1
STI23NM60ND Revision history
Table 9.
Date
Document revision history
Revision
07-Jan-2013 1
Changes
Initial release. The part number STI23NM60ND previously included in datasheet CD00183341.
Obsolete Product(s) - Obsolete Product(s)
Doc ID 024117 Rev 1 11/12
STI23NM60ND
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2013 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
12/12 Doc ID 024117 Rev 1
