STMicroelectronics RVNB35NV04 Datasheet

RVNB35NV04

OMNIFET II fully autoprotected Power MOSFET

Features

*$3*36

D

2

PAK

Datasheet

-

production data

 Aerospace and Defense features

– Dedicated traceability and part marking

– Production parts approval documents available

– Adapted Extended life time and obsolescence management

– Extended Product Change Notification process

– Designed and manufactured to meet sub ppm quality goals

– Advanced mold and frame designs for

Superior resilience to harsh environment

(acceleration, EMI, thermal, humidity)

– Single Fabrication, Assembly and Test site

– Dual internal production source capability

Type

RVNB35NV04

R

DS(on)

10 m 

I lim

30 A

V clamp

40 V

Application

All types of resistive, inductive and capacitive loads in Aerospace and Defense applications

 Linear current limitation

 Thermal shutdown

 Short circuit protection

 Integrated clamp

 Low current drawn from input pin

 Diagnostic feedback through input pin

 ESD protection

 Direct access to the gate of the Power

MOSFET (analog driving)

 Compatible with standard Power MOSFET

Package

D

2

PAK

Description

The RVNB35NV04 is a monolithic device designed in STMicroelectronics ® VIPower ® M0-3

Technology, intended for replacement of standard

Power MOSFETs from DC up to 25 kHz applications.

Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

Table 1. Device summary

Order codes

Tube

RVNB35NV04

Tape and reel

RVNB35NV04TR

September 2014

This is information on a product in full production.

DocID026741 Rev 2

1/21

www.st.com

1

2

Contents

Contents

3

4

RVNB35NV04

Block diagram and pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.1

Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.2

Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.4

Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

2.5

Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Package informantion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.1

ECOPACK

® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.2

D2PAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.3

D

2

PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

2/21

DocID026741 Rev 2

RVNB35NV04

List of tables

List of tables

Table 1.

Table 2.

Table 3.

Table 4.

Table 5.

Table 6.

Table 7.

Table 8.

Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Table 9.

Protections (-40°C

Table 10.

D2PAK mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Table 11.

Document revision history. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

DocID026741 Rev 2

3/21

3

List of figures

List of figures

RVNB35NV04

Figure 1.

Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 2.

Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Figure 3.

Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 4.

Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 5.

Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 6.

Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 7.

Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 8.

Thermal impedance for TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 9.

Source-drain diode forward characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 10.

Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 11.

Static drain-source on resistance vs. input voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 12.

Static drain-source on resistance vs. id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 13.

Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 14.

Transfer characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 15.

Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 16.

Normalized on resistance vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 17.

Turn-on current slope, V

IN

Figure 18.

Turn-on current slope, V

IN

3.5

V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 19.

Input voltage vs. input charge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 20.

Turn off drain source voltage slope, V

IN

Figure 21.

Turn off drain-source voltage slope, V

IN

3.5

V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 22.

Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 23.

Switching time resistive load (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 24.

Normalized input threshold voltage vs. temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 25.

Current limit vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 26.

Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 27.

Derating curve. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Figure 28.

D2PAK package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 29.

D

2

PAK footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 30.

Tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 31.

Tape and reel shipment (suffix “13TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4/21

DocID026741 Rev 2

RVNB35NV04

1

Block diagram and pin connection

Block diagram and pin connection

Figure 1. Block diagram

'5$,1

2YHUYROWDJH

&ODPS

,1387

*DWH

&RQWURO

2YHU

7HPSHUDWXUH

/LQHDU

&XUUHQW

/LPLWHU

6285&(

*$3*36

DocID026741 Rev 2

5/21

20

Electrical specification RVNB35NV04

2.1

,

,1

Figure 2. Current and voltage conventions

,

'

'5$,1

5

,1

,1387

6285&(

9

'6

9

,1

*$3*36

Symbol

V

DS

V

IN

I

IN

R

IN MIN

I

D

I

R

V

ESD1

V

ESD2

P tot

T j

T c

T stg

Absolute maximum ratings

Stressing the device above the rating listed in Table 2

may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to the conditions in table below for extended periods may affect device reliability

Table 2. Absolute maximum ratings

Parameter

Drain-source voltage (V

IN

Input voltage

Input current

Minimum input series impedance

Drain current

Reverse DC output current

Electrostatic discharge (R 1.5

k Ω , C

Electrostatic discharge on output pin only (R 330 Ω ,

Value

Internally clamped

Internally clamped

±20

4.7

Internally limited

-30

4000

16500

Total dissipation at T c

Operating junction temperature

Case operating temperature

Storage temperature

125

Internally limited

Internally limited

-55 to 150

Unit

A

A

V

V

V mA

Ω

V

W

°C

°C

°C

6/21

DocID026741 Rev 2

RVNB35NV04

Symbol

Table 3. Thermal data

Parameter

R thj-case

R thj-amb

Thermal resistance junction-case (max)

Thermal resistance junction-ambient (max)

1. When mounted on a standard single-sided FR4 board with 50mm 2 to all DRAIN pins.

Electrical specification

Value

1

50

(1)

Unit

°C/W

°C/W

-40°C T j

Symbol Parameter

Table 4. Off

Test conditions

V

CLAMP

V

V

I

CLTH

INTH

ISS

Drain-source clamp voltage

Drain-source clamp threshold voltage

Input threshold voltage

Supply current from input pin

V

IN

V

IN

V

DS

D

D

2 mA

V

DS

V

IN

; I

D

1 mA

V

=

IN

V

I

INCL

DSS

Input-source clamp voltage

Zero input voltage drain current (V

IN

I

IN

I

IN

V

DS

T j

V

DS

IN

IN

0 V;

0 V

Min Typ Max Unit

40 45 55 V

36

0.5

6

-1.0

2.5

100 150

6.8

8

-0.3

30

75

μ A

V

V

μ A

μ A

V

V

Symbol

R

DS(on)

Parameter

Static drain-source on resistance

V

IN

V

IN

Table 5. On

Test conditions

D

= A; =

D

= A; =

Max

13

24

Unit m Ω m Ω

T j

=

Symbol Parameter

Table 6. Dynamic

Test conditions Min Typ Max Unit g fs

(1)

Forward transconductance

V

DD

V;

C

OSS

Output capacitance V

DS

1. Pulsed: Pulse duration 300 ms, duty cycle 1.5%

15 A —

1 MHz; V

IN

= —

35

1300

—

—

S pF

DocID026741 Rev 2

7/21

20

Electrical specification RVNB35NV04

Symbol t d(on) t r t d(off) t f t d(on) t r t d(off) t f

Parameter

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on delay time

Rise time

Turn-off delay time

Fall time

(di/dt) on

Turn-on current slope

Q i

Total input charge

V

DD

V gen

V

DD

V gen

Table 7. Switching

R gen

Figure

Figure

Test conditions

V;

2

)

=

4.7

V; =

R gen

2

)

Ω

2.2

 k

(see

Ω  (see

V

DD

R gen

V

DD

I gen

V; 15 gen

4.7

Ω

V; =

IN

5 V;

7 )

—

—

Min Typ Max Unit

—

—

—

—

—

—

—

—

150

840

980

600

4

27

34

31

500

2500

3000

1500

12

100

120

110

μ s

μ s

μ s

μ s ns ns ns ns

18

118

A/ μ nC s

Symbol

V

I

SD

(1) t

Q rr rr

RRM

Parameter

Table 8. Source drain diode

Test Conditions

Forward on voltage

Reverse recovery time

I

SD

Reverse recovery charge

Reverse recovery current

IN

0 V

I

SD

V

DD

Figure

100 μ s;

V; 200 μ H (see

3 )

1. Pulsed: Pulse duration 300 ms, duty cycle 1.5%

Symbol

Table 9. Protections (-40°C T j

Parameter Test Conditions t

I dlim

E lim as

Drain current limit V

IN

Step response current limit

V

IN

T jsh

Overtemperature shutdown

T jrs reset

I gf

Fault Sink Current

Single pulse avalanche energy

V

V

DS

DS

V

V

IN

V

DS

Starting T j

=

V

IN

R gen

V;

V

DD

T jsh

4.7

Ω 

5 and

Figure 6 )

Min Typ Max Unit

—

—

0.8

400

—

—

V ns

— 1.4

— μ C

— 7 — A

Min Typ Max Unit

30 45 60 A

50 μ s

150 175 200

135

10 15 20

°C

°C mA

1.7

J

8/21

DocID026741 Rev 2

RVNB35NV04 Electrical specification

During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.

The device then behaves like a standard power MOSFET and can be used as a switch from

DC up to 25 KHz. The only difference from the user’s standpoint is that a small DC current

I

ISS

(typ. 100  μ A) flows into the INPUT pin in order to supply the internal circuitry.

The device integrates:

 Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche characteristics of the Power

MOSFET stage give this device unrivalled ruggedness and energy handling capability.

This feature is mainly important when driving inductive loads.

 Linear current limiter circuit: limits the drain current I

D

to I lim

whatever the INPUT pin voltages is. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh

.

 Overtemperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150°C to 190°C, a typical value being 170°C. The device is automatically restarted when the chip temperature falls of about 15°C below shutdown temperature.

 Status feedback: in the case of an overtemperature fault condition (T j diagnostic current I gf

> T jsh

), the device tries to sink a

through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current I gf

, the INPUT pin falls to 0 V. This does not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current I

ISS

.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.

DocID026741 Rev 2

9/21

20

Electrical specification

Figure 3. Switching time test circuit for resistive load

9

JHQ

9

'

5

JHQ

RVNB35NV04

,

'

9

JHQ

W

GRQ

W

U

W

GRII

W

I

W

Figure 4. Test circuit for diode recovery times

$

$

7

'

,

201,)(7

6

%

)$67

',2'(

%

/ X+

'

5

JHQ

9

''

,

201,)(7

9

JHQ

6

7

W

("1($'5

("1($'5

10/21

DocID026741 Rev 2

RVNB35NV04 Electrical specification

Figure 5. Unclamped inductive load test circuits

5

*(1

9

,1

3

:

("1($'5

Figure 6. Unclamped inductive waveforms

9

&/$03

9

'

,

$5

,

'

9

''

9

''

*$3*36

DocID026741 Rev 2

11/21

20

Electrical specification

Figure 7. Input charge test circuit

RVNB35NV04

9

,1

*(1

Figure 8. Thermal impedance for TO-220

*$3*36

12/21

DocID026741 Rev 2

*$3*36

RVNB35NV04

2.5

Electrical specification

Electrical characteristics curves

Figure 9. Source-drain diode forward characteristics

9VGP9

Figure 10. Static drain source on resistance

5GVRQP2KP

9LQ 9

7M ž&

9LQ 9

7M ž&

7M ž&

,G$

Figure 11. Static drain-source on resistance vs. input voltage

*$3*36

5GVRQP2KP

,G$

Figure 12. Static drain-source on resistance vs. id

*$3*36

5GVRQP2KP

7M ž&

7M ž&

7M ž&

7M ž&

,G $

,G $

,G $

,G $

,G $

,G $

9LQ 9

7M ž&

7M ž&

9LQ9

Figure 13. Transconductance

*$3*36

*IV6

9GV 9

7M ž&

7M ž&

7M ž&

,G$

Figure 14. Transfer characteristics

*$3*36

,GRQ$

9GV 9

7M ž&

7M ž&

7M ž&

,G$ 9LQ9

*$3*36 *$3*36

DocID026741 Rev 2

13/21

20

Electrical specification

Figure 15. Output characteristics

,G$

9LQ 9

9LQ 9

9LQ 9

9LQ 9

RVNB35NV04

Figure 16. Normalized on resistance vs. temperature

5GVRQP2KP

9LQ 9

,G $

9LQ 9

9GV9

Figure 17. Turn-on current slope,

V

IN

GLGW$—V

*$3*36

9LQ 9

9GG 9

,G $

7Fƒ&

Figure 18. Turn-on current slope,

V

IN

3.5

V

GLGW$—V

*$3*36

9LQ 9

9GG 9

,G $

5J2KP

*$3*36

5J2KP

*$3*36

Figure 19. Input voltage vs. input charge Figure 20. Turn off drain source voltage slope, V

IN

=

9LQ9

G9GW9—V

9GV 9

,G $

9LQ 9

9GG 9

,G $

4JQ&

*$3*36

5J2KP

*$3*36

14/21

DocID026741 Rev 2

RVNB35NV04 Electrical specification

Figure 21. Turn off drain-source voltage slope, V

IN

3.5

V

G9GW9—V

Figure 22. Switching time resistive load

(part 1)

7—V

9LQ 9

9GG 9

,G $

9GG 9

,G $

5J RKP

WGRII

WI

WU

WGRQ

5J2KP

*$3*36

Figure 23. Switching time resistive load

(part 2)

5J2KP

*$3*36

Figure 24. Normalized input threshold voltage vs. temperature

7QV

9LQWK 9

WU

9GG 9

,G $

5J RKP

WGRII

9GV 9LQ

,G P$

WI

WGRQ

9LQ9

*$3*36

Figure 25. Current limit vs. junction temperature

,OLP$

7Fž&

*$3*36

Figure 26. Step response current limit

7GOLP—V

9LQ 9

9GV 9

9LQ 9

7Fž&

*$3*36

DocID026741 Rev 2

9GG9

*$3*36

15/21

20

Electrical specification

Figure 27. Derating curve

RVNB35NV04

*$3*36

16/21

DocID026741 Rev 2

RVNB35NV04 Package informantion

3.1 ECOPACK

®

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

® specifications, grade definitions and product status are available at: www.st.com

.

ECOPACK

®

is an ST trademark.

3.2 D

2

PAK mechanical data

Dim.

H

J1

L

L1

E

E1 e e1

L2

R

V2 c c2

D

D1

A

A1 b b2

Table 10. D

2

PAK mechanical data mm.

Typ Min.

0.45

1.23

8.95

7.50

4.40

0.03

0.70

1.14

10

8.50

2.54

4.88

15

2.49

2.29

1.27

1.30

0.4

0°

Max.

4.60

0.23

0.93

1.70

0.60

1.36

9.35

10.40

5.28

15.85

2.69

2.79

1.40

1.75

8°

DocID026741 Rev 2

17/21

20

Package informantion

Figure 28. D 2 PAK package dimensions

RVNB35NV04

18/21

DocID026741 Rev 2

("1($'5

RVNB35NV04 Package informantion

3.3 D

2

PAK packing information

Figure 29.

D

2

PAK footprint Figure 30. Tube shipment (no suffix)

%

$

&

Base Q.ty

Bulk Q.ty

Tube length (± 0.5)

A

B

C (± 0.1)

All dimensions are in mm.

50

500

532

6

21.3

0.6

*$3*36

Figure 31. Tape and reel shipment (suffix “13TR”)

2%%, $)-%.3)/.3

"ASE 1TY

"ULK 1TY

! MAX

" MIN

# ›

&

'

. MIN

4 MAX

!LL DIMENSIONS ARE IN MM

4!0% $)-%.3)/.3

!CCORDING TO %LECTRONIC )NDUSTRIES !SSOCIATION

%)! 3TANDARD REV ! &EB

4APE WIDTH

4APE (OLE 3PACING

#OMPONENT 3PACING

(OLE $IAMETER

(OLE $IAMETER

(OLE 0OSITION

#OMPARTMENT $EPTH

(OLE 3PACING

7

0 ›

0

$ ›

$ MIN

& ›

+ MAX

0 ›

!LL DIMENSIONS ARE IN MM

(QG

7RS

FRYHU

WDSH

6WDUW

1RFRPSRQHQWV

PPPLQ

&RPSRQHQWV 1RFRPSRQHQWV

(PSW\FRPSRQHQWVSRFNHWV

VDOHGZLWKFRYHUWDSH

PPPLQ

8VHUGLUHFWLRQRIIHHG

*$3*36

DocID026741 Rev 2

19/21

20

Revision history

Date

24-Jul-2014

16-Sep-2014

Revision

Table 11. Document revision history

Changes

1

2

Initial release.

Updated

Features on page 1 .

RVNB35NV04

20/21

DocID026741 Rev 2

RVNB35NV04

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on

ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2014 STMicroelectronics – All rights reserved

DocID026741 Rev 2 21/21

21