STMicroelectronics STGB25N40LZAG Datasheet
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Publicitate
STGB25N40LZAG,
STGD25N40LZAG
Datasheet
Automotive-grade 400 V internally clamped IGBT E
SCIS
320 mJ
TAB
2
D 2 PAK
1
3
TAB
DPAK
1
2
3
C (2 or TAB)
Features
• AEC-Q101 qualified
• SCIS energy of 320 mJ @ T
J
= 25 °C
• Parts are 100% tested in SCIS
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Very low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor
G (1)
RG
RGE
Applications
• Automotive ignition coil driver circuit
E (3)
IGBTG1C2TABE3ESD
Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems.
These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.
Product status
STGB25N40LZAG
STGD25N40LZAG
Product summary
Order code STGB25N40LZAG
Marking
Package
Packing
GB25N40LZ
D²PAK
Tape and reel
Order code
Marking
Package
Packing
STGD25N40LZAG
GD25N40LZ
DPAK
Tape and reel
DS12284 - Rev 3 - February 2018
For further information contact your local STMicroelectronics sales office.
www.st.com/
1
STGB25N40LZAG, STGD25N40LZAG
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
CES
V
ECS
I
C
I
CP
V
GE
P
TOT
E
SCIS_25
E
SCIS_150
ESD
Parameter
Collector-emitter voltage (V
GE
= 0 V)
Emitter-collector voltage (V
GE
= 0 V)
Continuous collector current at T
C
= 25 °C, V
GE
= 4 V
Continuous collector current at T
C
= 100 °C, V
GE
= 4 V
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
C
= 25 °C
Self clamping inductive switching energy
Self clamping inductive switching energy @ T
J
= 150 °C
Human body model, R = 1.5 kΩ, C = 100 pF
Charged device model
Storage temperature range
V
GE
Value
V
CES(clamped)
20
25
25
50
(clamped)
150
320
180
4
2
Unit
V
V
A
A
A
V
W mJ mJ kV kV
T
STG
T
J
Operating junction temperature range
- 55 to 175 °C
1. Pulse width limited by maximum junction temperature.
2. Starting T j
= 25 °C, L = 3 mH, R g
= 1 kΩ, V are 100% electrically tested in production.
cc
= 50 V during inductor charging and V cc
= 0 V during the time in clamp. Parts
3. Starting T j
= 150 °C, L = 3 mH, R g
= 1 kΩ, V cc
= 50 V during inductor charging and V cc
= 0 V during the time in clamp.
Table 2. Thermal data
Symbol Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
D²PAK
Value
DPAK
1
62.5
100
Unit
°C/W
°C/W
DS12284 - Rev 3 page 2/20
2
STGB25N40LZAG, STGD25N40LZAG
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol Parameter
V
CES(clamped)
Collector-emitter clamped voltage
Test conditions
I
C
= 2 mA, V
GE
= 0 V
I
C
= 2 mA, V
GE
= 0 V, T j
= - 40 °C to 175 °C
V
V
(BR)ECS
GE(clamped)
Emitter-collector break-down voltage
Gate-emitter clamped voltage
I
C
= 75 mA, V
GE
= 0 V
V
V
I
I
CE(sat)
GE(th)
CES
GES
R
R
GE
G
Collector-emitter saturation voltage
Gate-threshold voltage
Collector cut-off current
Gate-emitter leakage current
Gate emitter resistance
Gate resistance
Min. Typ. Max. Unit
375
20
400
435
V
V
V
I
G
= ±2 mA, T j
= - 40 °C to 175 °C
V
GE
= 4 V, I
C
= 6 A
V
GE
= 4.5 V, I
C
= 10 A, T
J
= 175 °C
V
GE
= V
CE
, I
C
= 1 mA
V
GE
= V
CE
, I
C
= 1 mA, T
J
= 175 °C
V
CE
= 15 V, V
GE
= 0 V, T
J
= 175 °C
12
1.3
V
CE
= 200 V, V
GE
= 0 V, T
J
= 175 °C
V
GE
= ±10 V, V
CE
= 0 V
V
GE
= ±10 V, V
CE
= 0 V, T
J
= -40 °C to 175 °C 450
1.1
1.25
1.7
1.05
625
16
1.25
1.55
2.1
20
100
900
V
V
V
V
V
µA
µA
µA
µA
11 16 22 kΩ
120 Ω
Symbol Parameter
C ies
C oes
C res
Q g
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Table 4. Dynamic characteristics
Test conditions
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
V
CE
= 13 V, I
C
= 10 A, V
GE
= 0 to 5 V
Min.
Typ.
Max.
Unit
1011 -
-
87
14
-
pF
26 nC
Symbol Parameter t d(on)
Turn-on delay time t r
Current rise time t d(on)
Turn-on delay time t r
Current rise time
Table 5. Resistive load switching characteristics
Test conditions
V
CC
= 14 V, V
GE
= 5 V, R
L
= 1 Ω, R
G
= 1 kΩ
(see Figure 17. Test circuit for resistive load switching )
V
CC
= 14 V, V
GE
= 5 V, R
L
= 1 Ω, R
G
= 1 kΩ,
T
J
= 150 °C
(see Figure 17. Test circuit for resistive load switching )
Min.
Typ.
Max.
Unit
1.1
μs
-
3.6
1.06
-
-
μs
μs
3.5
μs
DS12284 - Rev 3 page 3/20
STGB25N40LZAG, STGD25N40LZAG
Electrical characteristics
Symbol Parameter t d(off) t f dV/dt
Turn-off delay time
Current fall time
Turn-off voltage slope t d(off) t f dV/dt
Turn-off delay time
Current fall time
Turn-off voltage slope
Table 6. Inductive load switching characteristics
Test conditions
V
CC
R
G
= 300 V, L = 1 mH, I
= 1 kΩ
C
= 10 A, V
GE
= 5 V,
(see
Figure 16. Test circuit for inductive load switching
)
V
CC
= 300 V, L = 1 mH, I
C
= 10 A, V
GE
= 5 V,
R
G
= 1 kΩ, T
J
= 150 °C
(see
Figure 16. Test circuit for inductive load switching
)
-
-
-
Min.
Typ.
Max.
Unit
4.6
μs
8.4
μs
165 V/μs
4.7
9.8
122
-
-
-
μs
μs
V/μs
DS12284 - Rev 3 page 4/20
STGB25N40LZAG, STGD25N40LZAG
Electrical characteristics (curves)
2.1 Electrical characteristics (curves)
Figure 1. V
CE(sat)
vs. junction temperature (I
C
= 6 A)
V
CE(SAT)
(V)
1.20
IGBT300820171153VCET_6
1.15
V
GE
= 4.0 V
V
GE
= 5.0 V
1.10
1.05
1.00
V
GE
= 8.0 V
V
GE
= 3.7 V
V
GE
= 4.5 V
0.95
0.90
-50 0 50 100 150 T
J
(°C)
Figure 3. Self clamped inductive switching current
I
SCIS
(A)
IGBT040920171326CLI
V
CC
= 24 V, R
G
= 1 kΩ, V
GE
= 5 V
40
30
20
10
0
0
T
J
= 150 ℃
2 4
T
J
= 25 ℃
6 8 L(mH)
Figure 5. Output characteristics (T
J
= -40 °C)
I
C
(A) V
GE
= 8.0 V
IGBT300820171146OC_40
V
GE
= 4.5 V
40
V
GE
= 5.0 V
30
V
GE
= 4.0 V
V
GE
= 3.5 V
20
V
GE
= 3.0 V
10
0
0 1 2 3 4 V
CE
(V)
Figure 2. V
CE(sat)
vs. junction temperature (I
C
= 10 A)
V
CE(SAT)
(V)
IGBT300820171149VCET_10
1.4
V
GE
= 4.0 V V
GE
= 4.5 V
V
GE
= 3.7 V
1.3
1.2
V
GE
= 8.0 V
V
GE
= 5.0 V
1.1
-50 0 50 100 150 T
J
(°C)
Figure 4. Output characteristics (T
J
= 25 °C)
I
C
(A) V
GE
= 8.0 V
IGBT300820171145OC25
V
GE
= 4.5 V
40
V
GE
= 5.0 V V
GE
= 4.0 V
30
V
GE
= 3.5 V
20
V
GE
= 3.0 V
10
0
0 1 2 3 4 V
CE
(V)
Figure 6. Output characteristics (T
J
= 175 °C)
I
C
(A)
IGBT300820171147OC175
V
GE
= 5.0 V
V
GE
= 4.5 V
40
V
GE
= 8.0 V V
GE
= 4.0 V
30
V
GE
= 3.5 V
20
V
GE
= 3.0 V
10
0
0 1 2 3 4 V
CE
(V)
DS12284 - Rev 3 page 5/20
10 0
10 -1
10 -2
10 -3
-50
I
C
(A)
Figure 7. Transfer characteristics
IGBT300820171156TCH
V
C E
= 8 V
40
T j
= 175 °C
30
20
T j
= 25 °C
10
0
1 2
T j
= -40 °C
3 4 V
GE
(V)
Figure 9. Leakage current vs. temperature
I
CES
(μA)
IGBT040920171330LCJT
V
CE
= 350 V
10 1
0
V
CE
= 200 V
50 100 150 T
J
(°C)
Figure 11. Normalized V
GE(th)
vs. temperature
V
GE(th)
(Norm.)
IGBT300820171157NVGE
1.1
V
I
CE
= V
GE
C
= 1 mA
0.9
0.7
0.5
-50 0 50 100 150 T
J
(°C)
STGB25N40LZAG, STGD25N40LZAG
Electrical characteristics (curves)
Figure 8. Collector current vs. case temperature
I
C
(A)
IGBT010920171228CCT
20
V
GE
= 4.0 V
10
0
-50 0 50 100 150 T
C
(°C)
Figure 10. Normalized V
CES(clamped)
vs. temperature
IGBT040920171338NVBR
V
CES(clamped)
(norm.)
I
C
= 2 mA
1.1
1.0
0.9
0.8
-50 0 50 100 150 T
J
(°C)
Figure 12. Gate charge vs. gate-emitter voltage
V
GE
(V) I
C
= 10 A
I
G
= 1 mA
IGBT040920171341GCGE
8
V
CE
= 13 V
6
V
CE
= 280 V
4
2
0
0 20 40 Q g
(nC)
DS12284 - Rev 3 page 6/20
C
(pF)
Figure 13. Capacitance variations
IGBT040920171343CVR
10 3 C ies
10 2
10 1 f = 1 MHz
10 0
10 -1 10 0 10 1 10 2
C oes
C res
V
CE
(V)
STGB25N40LZAG, STGD25N40LZAG
Electrical characteristics (curves)
Figure 14. Thermal impedance for DPAK
Figure 15. Thermal impedance for D²PAK
DS12284 - Rev 3 page 7/20
STGB25N40LZAG, STGD25N40LZAG
Test circuits
3
Test circuits
Figure 16. Test circuit for inductive load switching
G
C
E
B
A A
L=100 µH
B
G
C
E
D.U.T
3.3
µF
1000
µF
+
-
R
G
V
CC
AM015 04v 1
Figure 18. Gate charge test circuit k k k k k k
AM01505v1
Figure 17. Test circuit for resistive load switching
L
AM01504v2
V
CE
Figure 19. Switching waveform
V
G
I
C
Td(on)
Ton
Tr(Ion)
90%
10%
Tr(Voff)
Tcross
90%
10%
Td(off)
Toff
Tf
90%
10%
AM01506v1
DS12284 - Rev 3 page 8/20
4
4.1
STGB25N40LZAG, STGD25N40LZAG
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
D²PAK (TO-263) type A package information
Figure 20. D²PAK (TO-263) type A package outline
DS12284 - Rev 3
Dim.
A
A1 b b2 c
Table 7. D²PAK (TO-263) type A package mechanical data mm
Typ.
Min.
4.40
0.03
0.70
1.14
0.45
0079457_24
Max.
4.60
0.23
0.93
1.70
0.60
page 9/20
Dim.
E
E1
E2 e e1 c2
D
D1
D2
L1
L2
R
V2
H
J1
L
4.88
15.00
2.49
2.29
1.27
1.30
0°
Min.
1.23
8.95
7.50
1.10
10.00
8.50
6.85
STGB25N40LZAG, STGD25N40LZAG
D²PAK (TO-263) type A package information mm
Typ.
7.75
1.30
8.70
7.05
2.54
0.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
Max.
1.36
9.35
8.00
1.50
10.40
8.90
7.25
DS12284 - Rev 3 page 10/20
DS12284 - Rev 3
STGB25N40LZAG, STGD25N40LZAG
D²PAK (TO-263) type A package information
Figure 21. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint page 11/20
4.2
STGB25N40LZAG, STGD25N40LZAG
DPAK (TO-252) type A2 package information
DPAK (TO-252) type A2 package information
Figure 22. DPAK (TO-252) type A2 package outline
DS12284 - Rev 3
0068772_type-A2_rev24 page 12/20
DS12284 - Rev 3
Dim.
c2
D
D1
E
E1 e e1
A
A1
A2 b b4 c
L2
L4
R
V2
H
L
L1
STGB25N40LZAG, STGD25N40LZAG
DPAK (TO-252) type A2 package information
Table 8. DPAK (TO-252) type A2 mechanical data mm
Typ.
9.35
1.00
2.60
0.65
0.60
4.95
6.40
5.10
2.16
4.40
0.64
5.20
0.45
0.48
6.00
Min.
2.20
0.90
0.03
5.10
5.20
2.28
2.80
0.80
0.20
0°
10.10
1.50
3.00
0.95
1.00
5.25
6.60
5.30
2.40
4.60
0.90
5.40
0.60
0.60
6.20
Max.
2.40
1.10
0.23
8° page 13/20
STGB25N40LZAG, STGD25N40LZAG
DPAK (TO-252) type A2 package information
Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_24
DS12284 - Rev 3 page 14/20
4.3
STGB25N40LZAG, STGD25N40LZAG
D²PAK and DPAK packing information
D²PAK and DPAK packing information
Figure 24. Tape outline
DS12284 - Rev 3 page 15/20
DS12284 - Rev 3
A
D
B
STGB25N40LZAG, STGD25N40LZAG
D²PAK and DPAK packing information
Figure 25. Reel outline
T
40mm min. access hole at slot location
C
N
G measured at hub
Full radius
Tape slot in core for tape start
2.5mm min.width
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
D
D1
Min.
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
Tape
Table 9. D²PAK tape and reel mechanical data
Reel mm
Dim.
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
C
D
A
B
G
N
T
Base quantity
Bulk quantity
Min.
1.5
12.8
20.2
24.4
100
0.35
24.3
mm
AM06038v1
Max.
330
13.2
26.4
30.4
1000
1000 page 16/20
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
STGB25N40LZAG, STGD25N40LZAG
D²PAK and DPAK packing information
Tape
Table 10. DPAK tape and reel mechanical data
Reel mm
Min.
6.8
10.4
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
0.25
15.7
1.85
7.6
2.75
4.1
8.1
2.1
Max.
7
10.6
12.1
1.6
0.35
16.3
Dim.
N
T
D
G
A
B
C
Base qty.
Bulk qty.
Min.
1.5
12.8
20.2
16.4
50 mm
Max.
330
13.2
18.4
22.4
2500
2500
DS12284 - Rev 3 page 17/20
STGB25N40LZAG, STGD25N40LZAG
Revision history
Table 11. Document revision history
Date
05-Sep-2017
Revision Changes
1 First release.
11-Sep-2017
13-Feb-2018
2
3
Modified Section 4.1: "D²PAK (TO-263) type A package information".
Minor text changes.
Removed maturity status indication from cover page.
Updated Table 1. Absolute maximum ratings
,
Table 5. Resistive load switching characteristics
and
Table 6. Inductive load switching characteristics .
Minor text changes.
DS12284 - Rev 3 page 18/20
STGB25N40LZAG, STGD25N40LZAG
Contents
Contents
DS12284 - Rev 3 page 19/20
STGB25N40LZAG, STGD25N40LZAG
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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DS12284 - Rev 3 page 20/20
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