STMicroelectronics STU6N95K5 Datasheet
Reklamë
Reklamë
STD6N95K5, STP6N95K5
STU6N95K5, STW6N95K5
Datasheet
N-channel 950 V, 1 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in DPAK,
TO-220, IPAK and TO-247 packages
TAB
DPAK 1
3
TAB
IPAK
TAB
TO-220
1
2
3
1
2
3
TO-247
D(2, TAB)
1
2
3
Features
Order codes V
DS
R
DS(on)
max.
STD6N95K5
STP6N95K5
950 V 1.25 Ω
STU6N95K5
STW6N95K5
• DPAK 950 V worldwide best R
DS(on)
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
G(1)
S(3)
AM01475V1
I
D
9 A
P
TOT
90 W
Applications
• Switching applications
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™
K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Product status link
STD6N95K5
STP6N95K5
STU6N95K5
STW6N95K5
DS6666 - Rev 5 - March 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
GS
I
D
I
D
I
DM
P
TOT
I
AR
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Parameter
Max current during repetitive or single pulse avalanche
E
AS dv/dt
dv/dt
T j
T stg
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature range
Storage temperature range
1. Pulse width limited by safe operating area.
2. Pulse width limited by T
Jmax.
3. I
SD
≤ 9 A, di/dt ≤ 100 A/µs, V
DS(peak)
≤ V
(BR)DSS
4. V
DS
≤ 760 V
Table 2. Thermal data
Symbol Parameter
R thj-case
R thj-amb
R thj-pcb
Thermal resistance junction-case
Thermal resistance junction-amb
Thermal resistance junction-pcb
1. When mounted on 1 inch² FR-4 board, 2 oz Cu
TO-220,
IPAK
Value
DPAK
1.39
62.5
50
Value
± 30
9
6
24
90
3
90
4.5
50
- 55 to 150
Unit
V
A
A
A
W
A mJ
V/ns
V/ns
°C
TO-247
50
Unit
°C/W
°C/W
°C/W
DS6666 - Rev 5 page 2/26
2
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
Electrical characteristics
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 3. On/off states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
V
GS
= 0 V, I
Test conditions
D
= 1 mA
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current
Gate body leakage current
Gate threshold voltage
Static drain-source onresistance
V
GS
= 0 V, V
DS
= 950 V
V
GS
= 0 V, V
DS
= 950 V, Tc=125 °C
V
V
DS
V
DS
GS
1. Defined by design, not subject to production test.
= 0, V
= V
GS
GS
, I
D
= 10 V, I
D
= ± 20 V
= 100 µA
= 3 A
Min.
950
3
Typ.
Max.
4
1
1
50
±10
5
1.25
Unit
V
µA
µA
µA
V
Ω
Table 4. Dynamic
Symbol
C iss
C oss
C rss
Parameter
Input capacitance
Output capacitance V
GS
=0 V, V
Test conditions
DS
=100 V, f=1 MHz
Min.
-
-
Typ.
450
30
Max.
-
-
Unit pF pF
C
C o(tr) o(er)
Reverse transfer capacitance
Equivalent capacitance time related
Equivalent capacitance energy related
V
GS
= 0 V, V
DS
= 0 to 760 V
-
-
1.6
45
19 -
-
pF pF pF
R
G
Q g
Q gs
Q gd
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge f = 1 MHz, I
V
V
DD
GS
D
=0 A
= 760 V, I
D
= 6 A,
= 0 to 10 V, (see Figure 17. Test circuit for gate charge behavior )
-
-
-
7
13
3
7 -
-
-
Ω nC nC nC
1. C o(tr)
is a constant capacitance value that gives the same charging time as C oss
while V
DS
is rising from 0 to 80% V
DSS
.
2. C o(er)
is a constant capacitance value that gives the same stored energy as C oss
while V
DS
is rising from 0 to 80% V
DSS
.
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 5. Switching times
Test conditions
V
DD
V
GS
= 475 V, I
=10 V
D
= 3 A, R
G
=4.7 Ω,
(see
Figure 16. Test circuit for resistive load switching times and
Figure 21. Switching time waveform
)
Min.
-
-
-
-
Typ.
12
12
33
21
Max.
-
-
-
-
Unit ns ns ns ns
DS6666 - Rev 5 page 3/26
DS6666 - Rev 5
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
Electrical characteristics
Table 6. Source drain diode
Symbol
I
SD
I
SDM
V
SD
I
I t
Q
RRM t
Q rr rr rr rr
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
SD
= 6 A, V
GS
=0 V
I
SD
= 6 A, V
DD
= 60 V di/dt = 100 A/µs,
(see
Figure 18. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 6 A,V
DD
= 60 V di/dt=100 A/µs, Tj=150 °C
(see
Figure 18. Test circuit for inductive load switching and diode recovery times
)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
V
(BR)GSO
Parameter
Gate-source breakdown voltage
Table 7. Gate-source Zener diode
Test conditions
I
GS
= ± 1mA, I
D
= 0 A
-
-
-
Min.
-
-
-
-
-
-
522
5
20
372
4
22
Typ.
Max.
9
24
1.6
ns
µC
A
Unit
A
A
V ns
µC
A
Min
±30
Typ.
-
Max.
-
Unit
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
page 4/26
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for DPAK and IPAK
I D
(A)
10
AM07105v1
Tj=150°C
Tc=25°C
Single pulse
10µs
1
Oper
Limited b
DS(on)
100µs
1ms
10ms
0.1
0.01
0.1 1 10 100 V DS (V)
Figure 3. Safe operating area for TO-220 and TO-247
I
D
(A)
AM07107v1
Tj=150°C
Tc=25°C
Single pulse
10
1
DS(on)
10µs
100µs
1ms
Oper
Limited b
10ms
0.1
0.01
0.1 1 10 100 V
DS
(V)
I
D
(A)
12
10
8
6
4
2
0
0
Figure 5. Output characteristics
AM07108v1
V
GS
=10V
5 10 15 20
5V
25
7V
6V
V
DS
(V)
Figure 2. Thermal impedance for DPAK and IPAK
K
GC20460
10 0
10 -1
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Thermal impedance for TO-220 and TO-247
6
4
I
D
(A)
Figure 6. Transfer characteristics
AM07109v1
V
DS
=15V
8
2
0
0 2 4 6 8 V
GS
(V)
DS6666 - Rev 5 page 5/26
Figure 7. Gate charge vs gate-source voltage
V
GS
(V)
12
V
DS V
DD
=760V
I
D
=6A
AM07110v1
V
DS
(V)
700
600
10
500
8
400
6
300
4
200
2
0
0 2 4 6 8
100
10 12 14
0
Q g
(nC)
C
(pF)
Figure 9. Capacitance variations
AM07112v1
1000
Ciss
100
10
1
0.1 f = 1 MHz
1 10
Coss
Crss
100 V DS (V)
Figure 11. Normalized gate threshold voltage vs temperature
AM07114v1
V
GS(th)
(norm)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-75 -25
I D =100 µA
25 75 125 T
J
(°C)
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
Electrical characteristics (curves)
Figure 8. Static drain-source on-resistance
AM07111v1
R
DS(on)
(Ohm)
1.03
1.01
0.99
0.97
0.95
0.93
0.91
0.89
0.87
0.5 1.0
V
GS
=10V
1.5 2.0 2.5 3.0 I
D
(A)
Figure 10. Output capacitance storage energy
AM07113v1
Eoss (µJ)
22
20
16
14
12
10
4
2
0
0
8
6
100 200 300 400 500 600 700 800 900 VDS(V)
Figure 12. Normalized on-resistance vs temperature
AM07115v1
R DS(on)
(norm)
2.5
V
GS
=10V
I
D
=3A
2.0
1.5
1.0
0.5
0
-75 -25 25 75 125 T J (°C)
DS6666 - Rev 5 page 6/26
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
Electrical characteristics (curves)
Figure 13. Source-drain diode forward characteristics
AM07118v1
V
SD
(V)
0.95
T
J
=-50°C
0.85
T
J
=25°C
0.75
0.65
T J =150°C
0.55
2.0 3.0 4.0 5.0 6.0 I
SD
(A)
Figure 14. Normalized V
(BR)DSS
vs temperature
AM07116v1
V (BR)DSS
(norm)
1.2
1.1
1.0
0.9
0.8
0.7
-75 -25
I
D
=1 mA
Figure 15. Maximum avalanche energy vs starting T j
AM07117v1
E
AS
(mJ)
100
90
80
70
60
50
40
30
20
10
0
0 20 40
I D =3 A
V
DD
=50 V
60 80 100 120 140 T
J
(°C)
25 75 125 T
J
(°C)
DS6666 - Rev 5 page 7/26
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
Test circuits
3
Test circuits
Figure 16. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 18. Test circuit for inductive load switching and diode recovery times
Figure 17. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 19. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 20. Unclamped inductive waveform
V (BR)DSS
V
D
I DM
I D
V DD V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF V
DD
D.U.T.
AM01471v1
Figure 21. Switching time waveform
0 t d(on) t on t r
90%
10%
V
GS
V
DS
90% t d(off) t off t f
90%
10%
0
10%
AM01473v1
DS6666 - Rev 5 page 8/26
4
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS6666 - Rev 5 page 9/26
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
DPAK (TO-252) type A2 package information
4.1
DPAK (TO-252) type A2 package information
Figure 22. DPAK (TO-252) type A2 package outline
DS6666 - Rev 5
0068772_type-A2_rev24 page 10/26
DS6666 - Rev 5
Dim.
c2
D
D1
E
E1 e e1
A
A1
A2 b b4 c
L2
L4
R
V2
H
L
L1
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
DPAK (TO-252) type A2 package information
Table 8. DPAK (TO-252) type A2 mechanical data mm
Typ.
9.35
1.00
2.60
0.65
0.60
4.95
6.40
5.10
2.16
4.40
0.64
5.20
0.45
0.48
6.00
Min.
2.20
0.90
0.03
5.10
5.20
2.28
2.80
0.80
0.20
0°
10.10
1.50
3.00
0.95
1.00
5.25
6.60
5.30
2.40
4.60
0.90
5.40
0.60
0.60
6.20
Max.
2.40
1.10
0.23
8° page 11/26
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
DPAK (TO-252) type C2 package information
4.2
DPAK (TO-252) type C2 package information
Figure 23. DPAK (TO-252) type C2 package outline
DS6666 - Rev 5
0068772_C2_24 page 12/26
DS6666 - Rev 5
Dim.
L
L1
L2
L3
L4
L6
θ1
θ2
V2 c2
D
D1
E
E1 e
H
A
A1
A2 b b4 c
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
DPAK (TO-252) type C2 package information
Table 9. DPAK (TO-252) type C2 mechanical data
0.72
5.13
0.47
0.47
6.00
Min.
2.20
0.90
0.00
5.10
6.50
5.20
2.186
9.80
1.40
mm
Typ.
2.30
1.01
5.33
6.10
6.60
2.286
10.10
1.50
2.90 REF
0.90
0.60
5°
5°
0°
0.51 BSC
0.80
1.80 BSC
7°
7°
1.00
9°
9°
8°
0.85
5.46
0.60
0.60
6.20
Max.
2.38
1.10
0.10
5.60
6.70
5.50
2.386
10.40
1.70
1.25
page 13/26
DS6666 - Rev 5
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
DPAK (TO-252) type C2 package information
Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_24 page 14/26
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
DPAK (TO-252) packing information
4.3
DPAK (TO-252) packing information
Figure 25. DPAK (TO-252) tape outline
T
Top cover tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
B1
K0
For machine ref. only including draft and radii concentric around B0
B0
A0 P1
User direction of feed
D1
F
E
W
User direction of feed
R
Bending radius
AM08852v1
DS6666 - Rev 5 page 15/26
DS6666 - Rev 5
Dim.
D1
E
F
K0
P0
A0
B0
B1
D
P1
P2
R
T
W
A
D
B
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
DPAK (TO-252) packing information
Figure 26. DPAK (TO-252) reel outline
T
40mm min. access hole at slot location
C
N
G measured at hub
Full radius
Tape slot in core for tape start
2.5mm min.width
AM06038v1
2.55
3.9
7.9
1.9
40
0.25
15.7
1.5
1.5
1.65
7.4
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
C
D
A
B
G
N
T
Min.
1.5
12.8
20.2
16.4
50 1.85
7.6
2.75
4.1
8.1
2.1
0.35
16.3
Base qty.
Bulk qty.
mm
Max.
330
13.2
18.4
22.4
2500
2500 page 16/26
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
TO-220 type A package information
4.4
TO-220 type A package information
Figure 27. TO-220 type A package outline
DS6666 - Rev 5
0015988_typeA_Rev_21 page 17/26
DS6666 - Rev 5
Dim.
E e e1
F
H1
J1
L b1 c
A b
D
D1
L1
L20
L30
øP
Q
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
TO-220 type A package information
Table 11. TO-220 type A package mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
3.85
2.95
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
Max.
4.60
0.88
1.55
0.70
15.75
page 18/26
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
IPAK (TO-251) type A package information
4.5
IPAK (TO-251) type A package information
Figure 28. IPAK (TO-251) type A package outline
DS6666 - Rev 5
0068771_IK_typeA_rev14 page 19/26
DS6666 - Rev 5
Dim.
D
E e c c2 e1
H
L
L1
L2
V1
A
A1 b b2 b4
B5
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
IPAK (TO-251) type A package information
Table 12. IPAK (TO-251) type A package mechanical data mm
Typ.
Min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
0.30
2.28
16.10
0.80
10°
0.60
0.60
6.20
6.60
4.60
Max.
2.40
1.10
0.90
0.95
5.40
9.40
1.20
1.00
page 20/26
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
TO-247 package information
4.6
TO-247 package information
Figure 29. TO-247 package outline
DS6666 - Rev 5
0075325_9 page 21/26
Dim.
e
L
L1
D
E
A
A1 b b1 b2 c
L2
ØP
ØR
S
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
TO-247 package information
Table 13. TO-247 package mechanical data mm
Typ.
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
5.45
18.50
3.55
4.50
5.30
5.50
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DS6666 - Rev 5 page 22/26
5
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
Ordering information
Ordering information
Order code
STD6N95K5
STP6N95K5
STU6N95K5
STW6N95K5
Table 14. Ordering information
Marking
6N95K5
6N95K5
6N95K5
6N95K5
Package
DPAK
TO-220
IPAK
TO-247
Packing
Tape and reel
Tube
Tube
Tube
DS6666 - Rev 5 page 23/26
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
Revision history
Table 15. Document revision history
Date
12-Jan-2010
01-Jul-2010
31-Aug-2012
16-May-2014
22-Mar-2018
Revision Changes
1 First release.
2
3
Document status promoted from preliminary data to datasheet.
Inserted new device in IPAK.
Updated Table 1: Device summary , Table 2: Absolute maximum ratings , and Table 3: Thermal data.
Updated Section 4: Package mechanical data and Section 5: Packaging mechanical data .
Minor text changes in the cover page.
4
5
The part number STF6N95K5 has been moved to a separate datasheet.
Added: MOSFET dv/dt ruggedness parameter in Table 2
Updated: Section 4: Package mechanical data
Minor text changes
Removed maturity status indication and updated title and description from cover page.
The document status is production data.
Updated
Section 1 Electrical ratings ,
Section 2 Electrical characteristics .
Updated
Figure 9. Capacitance variations and Figure 12. Normalized on-resistance vs temperature
.
Updated
.
Minor text changes.
DS6666 - Rev 5 page 24/26
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
Contents
Contents
DS6666 - Rev 5 page 25/26
STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS6666 - Rev 5 page 26/26
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