STP3LN80K5, STU3LN80K5
Nchannel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5
Power MOSFET in TO-220 and IPAK packages
Datasheet - production data
TAB
IPAK
G(1)
1
2
3
TAB
TO-220 1
2
3
Figure 1: Internal schematic diagram
D(2, TAB)
Features
Order code V
DS
R
DS(on)
max
STP3LN80K5
800 V
3.25 Ω
STU3LN80K5
Industry’s lowest R
DS(on)
x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
I
D
2 A
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
S(3)
Order code
STP3LN80K5
STU3LN80K5
AM01476v1
Table 1: Device summary
Marking Package
3LN80K5
TO-220
IPAK
Packing
Tube
June 2016 DocID027716 Rev 2
This is information on a product in full production.
1/15 www.st.com
Contents
Contents
STP3LN80K5, STU3LN80K5
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1
4.2
IPAK package information ............................................................... 10
TO-220 type A package information ................................................ 12
5 Revision history ............................................................................ 14
2/15 DocID027716 Rev 2
STP3LN80K5, STU3LN80K5
1 Electrical ratings
Symbol
V
GS
I
D
I
D
I
D
(1)
P
TOT
dv/dt (2) dv/dt (3)
T stg
T j
Table 2: Absolute maximum ratings
Parameter
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
Electrical ratings
Value
± 30
2
1.25
8
45
4.5
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
°C
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
SD
≤ 2 A, di/dt ≤ 100 A/µs; V
DSpeak
< V
(BR)DSS
, V
DD
= 640 V.
(3)
V
DS
≤ 640 V.
Table 3: Thermal data
Symbol
R thj-case
R thj-amb
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
TO-220 IPAK
62.5
2.78
100
Symbol
I
AR
E
AS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax
)
Single pulse avalanche energy (starting T j
= 25°C, I
D
= I
AR
; V
DD
= 50 V)
Unit
°C/W
°C/W
Value Unit
0.7 A
155 mJ
DocID027716 Rev 2 3/15
Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5: On /off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0 V
I
DSS
Zero gate voltage drain current
V
DS
= 800 V, V
GS
= 0 V
V
DS
= 800 V, V
GS
= 0 V,
T
C
= 125 °C (1)
I
GSS
Gate body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source on-resistance
V
GS
= ± 20 V, V
GS
= 0 V
V
DS
= V
GS
, I
D
= 100 µA
V
GS
= 10 V, I
D
= 1 A
STP3LN80K5, STU3LN80K5
Min. Typ. Max. Unit
800
1
V
µA
50 µA
±10 µA
4 5 V
2.75 3.25 Ω
3
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
C
otr
(1)
C
oer
(2)
R
G
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time related
Equivalent capacitance energy related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
V
DS
= 0 to 640 V, V
GS
= 0 V f = 1 MHz, I
D
= 0 A
V
DD
= 640 V, I
D
= 2 A,
V
GS
= 10 V ( see Figure 17:
"Test circuit for gate charge behavior" )
Min. Typ. Max. Unit
-
-
-
102
11
0.1
-
-
- pF pF pF
-
-
-
-
-
-
20
7
12
2.63
0.91
1.53
-
-
-
-
-
- pF pF
Ω nC nC nC
Notes:
(1)
Time related is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to 80% V
DSS
(2)
Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss
when V
DS increases from 0 to 80% V
DSS
4/15 DocID027716 Rev 2
STP3LN80K5, STU3LN80K5
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 7: Switching times
Test conditions
V
DD
= 400 V, I
D
= 1 A, R
G
= 4.7
Ω,
V
GS
= 10 V ( see Figure 16: "Test circuit for resistive load switching times" and Figure 21: "Switching time waveform" )
Symbol Parameter
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
I
Q rr
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current t rr
I
Q rr
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 8: Source drain diode
Test conditions
I
I
I
SD
SD
V
SD
V
= 2 A, V
DD
GS
= 0 V
= 2 A, di/dt = 100 A/µs,
= 60 V ( see
= 2 A, di/dt = 100 A/µs,
DD
= 60 V, T j
= 150 °C, (see
Figure 18: "Test circuit for inductive load switching and diode recovery times" )
Figure 18: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
Min. Typ. Max. Unit
- 2 A
- 8 A
-
- 210
1.5 V ns
- 0.8 µC
-
-
-
-
6.2
7
30
26
7.6
345
1.2
7.2
-
-
-
- ns ns ns ns
A ns
µC
A
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
Table 9: Gate-source Zener diode
Parameter Test conditions
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ± 1 mA, I
D
= 0 A
Min. Typ. Max. Unit
30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
5/15 DocID027716 Rev 2
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for TO-220
STP3LN80K5, STU3LN80K5
Figure 3: Thermal impedance for TO-220
Figure 4: Safe operating area for IPAK
Figure 5: Thermal impedance for IPAK
CG34360
K
10
0 c
10
-1
Figure 6: Output characteristics
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1 t p
(s)
Figure 7: Transfer characteristics
6/15 DocID027716 Rev 2
STP3LN80K5, STU3LN80K5
Figure 8: Gate charge vs gate-source voltage
Electrical characteristics
Figure 9: Static drain-source on-resistance
Figure 10: Capacitance variations
Figure 11: Source-drain diode forward characteristics
Figure 12: Normalized gate threshold voltage vs temperature
Figure 13: Normalized on-resistance vs temperature
DocID027716 Rev 2 7/15
Electrical characteristics
Figure 14: Normalized V(BR)DSS vs temperature
STP3LN80K5, STU3LN80K5
Figure 15: Maximum avalanche energy vs starting TJ
8/15 DocID027716 Rev 2
STP3LN80K5, STU3LN80K5
3 Test circuits
Figure 16: Test circuit for resistive load switching times
Test circuits
Figure 17: Test circuit for gate charge behavior
V
DD
RL
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
100 Ω D.U.T.
V
G
AM01469v10
Figure 18: Test circuit for inductive load switching and diode recovery times
Figure 19: Unclamped inductive load test circuit
Figure 20: Unclamped inductive waveform
Figure 21: Switching time waveform
DocID027716 Rev 2 9/15
Package information
4
4.1
Package information
STP3LN80K5, STU3LN80K5
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
IPAK package information
Figure 22: IPAK (TO-251) type A package outline
10/15 DocID027716 Rev 2
STP3LN80K5, STU3LN80K5 Package information
Table 10: IPAK (TO-251) type A package mechanical data mm
Dim.
A
A1 b b2
Min.
2.20
0.90
0.64
Typ. Max.
2.40
1.10
0.90
0.95
b4
B5 c
5.20
0.45
0.30
5.40
0.60
c2
D
E e
0.48
6.00
6.40
2.28
0.60
6.20
6.60
e1
H
4.40
16.10
4.60
L 9.00
9.40
L1
L2
V1
0.80
0.80
10°
1.20
1.00
DocID027716 Rev 2 11/15
Package information
4.2 TO-220 type A package information
STP3LN80K5, STU3LN80K5
Figure 23: TO-220 type A package outline
12/15 DocID027716 Rev 2
STP3LN80K5, STU3LN80K5
Dim. e1
F
H1
J1
L
L1
L20
D
D1
E e
A b b1 c
L30
øP
Q
Table 11: TO-220 type A mechanical data mm
Min. Typ.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
Package information
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
Max.
4.60
0.88
1.55
0.70
15.75
DocID027716 Rev 2 13/15
Revision history
5
STP3LN80K5, STU3LN80K5
Revision history
Date Revision
Table 12: Document revision history
Changes
09-Jul-2015
28-Jun-2016
1
2
Initial release
Updated title and features in cover page.
Updated Section 1: "Electrical ratings" .
Updated Section 2: "Electrical characteristics" .
Added Section 2.1: "Electrical characteristics (curves)" .
Document status promoted from preliminary to production data.
Minor text changes.
14/15 DocID027716 Rev 2
STP3LN80K5, STU3LN80K5
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DocID027716 Rev 2 15/15
