SCTW100N65G2
Silicon carbide Power MOSFET 650 V, 100 A, 22 mΩ
(typ., T
J
=150 °C), in an HiP247™ package
Datasheet - preliminary data
1
2
3
HiP247
Figure 1: Internal schematic diagram
Features
Very tight variation of on-resistance vs. temperature
Very high operating temperature capability
(T
J
= 200 °C)
Very fast and robust intrinsic body diode
Low capacitance
Applications
Traction for inverters
DC-DC converters
Description
This silicon carbide Power MOSFET has been developed using ST’s advanced and innovative
2 nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
The variation of both on-resistance and switching losses is almost independent of junction temperature.
Order code
SCTW100N65G2
Table 1: Device summary
Marking
SCT100N65G2
Package
HiP247™
Packaging
Tube
The device meets ECOPACK standards, an environmentally-friendly grade of products
commonly referred to as “halogen-free”. See Section 5: "Package information" .
June 2016 DocID029494 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/9 www.st.com
Contents
Contents
SCTW100N65G2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
3 Package information ....................................................................... 6
3.1
HiP247™ package information .......................................................... 6
4 Revision history .............................................................................. 8
2/9 DocID029494 Rev 1
SCTW100N65G2
1 Electrical ratings
Symbol
V
DS
V
GS
I
D
I
DM
(1)
P
TOT
T stg
T j
Table 2: Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Gate-source voltage (recommended operating values)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Electrical ratings
Value
650
-10 to 22
-5 to 20
100
85
200
390
-55 to 200
Unit
V
V
A
A
W
°C
°C
Value
0.45
50
Unit
°C/W
°C/W
DocID029494 Rev 1 3/9
Electrical characteristics
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
Symbol Parameter
Table 4: On/off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1 mA
I
DSS
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Zero gate voltage drain current
Static drain-source on-resistance
V
DS
= 650 V, V
GS
= 0 V
V
DS
= 650 V, V
GS
= 0 V,
T
J
= 150 °C (1)
V
DS
= 0 V,
V
GS
= -10 to 22 V
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 20 V, I
D
= 50 A
V
GS
= 20 V, I
D
= 50 A,
T
J
= 150 °C
V
GS
= 20 V, I
D
= 50 A,
T
J
= 200 °C
SCTW100N65G2
Min. Typ. Max. Unit
650 V
50
100
µA
500 nA
1.9 3.2
20
22
23
V mΩ
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
R g
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
V
DS
= 400 V, f = 1 MHz,
V
GS
= 0 V
V
DD
= 400 V, I
D
= 50 A,
V
GS
= 0 to 20 V f=1 MHz, I
D
= 0 A
Symbol
E on
E off
Min. Typ. Max. Unit
-
-
-
-
-
-
-
3600
305
78
215
32
60
1.5
-
-
-
-
-
-
- pF pF pF nC nC nC
Ω
Table 6: Switching energy (inductive load)
Parameter Test conditions Min. Typ. Max. Unit
Turn-on switching energy
Turn-off switching energy
V
DD
= 400 V, I
D
= 50 A
R
G
= 2.2 Ω,
V
GS
= -5 to 20 V
-
-
300
250
-
-
µJ
µJ
4/9 DocID029494 Rev 1
SCTW100N65G2
Symbol
V
SD t rr
Q rr
I
RRM
Table 7: Reverse diode characteristics
Electrical characteristics
Parameter Test conditions Min Typ. Max Unit
I
F
= 30 A, V
GS
= 0 V Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 50 A, di/dt = 4000 A/µs
V
DD
= 400 V, V
GS
= -5 V
-
-
-
-
3.5
28
795
44
-
-
-
-
V ns nC
A
DocID029494 Rev 1 5/9
Package information
3
3.1
Package information
SCTW100N65G2
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
HiP247™ package information
Figure 2
: HiP247™ package outline
6/9 DocID029494 Rev 1
SCTW100N65G2
Dim. e
L
L1
L2
ØP
ØR
S b2 c
D
E
A
A1 b b1
Table 8: HiP247™ package mechanical data mm.
Min. Typ.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
5.45
18.50
5.50
Package information
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DocID029494 Rev 1 7/9
Revision history
4
SCTW100N65G2
Revision history
Date
28-Jun-2016
Table 9: Document revision history
Revision
1
Changes
First release
8/9 DocID029494 Rev 1
SCTW100N65G2
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