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HVLED805
Off-line LED driver with primary-sensing
Features
■
■
■
■
■
■
■
■
800 V, avalanche rugged internal power
MOSFET
5% accuracy on constant LED output current with primary control
Optocoupler not needed
Quasi-resonant (QR) zero voltage switching
(ZVS) operation
Internal HV start-up circuit
Open or short LED string management
Automatic self supply
Input voltage feed-forward for mains independent cc regulation
Applications
■
■
AC-DC led driver applications
LED retrofit lamps (i.e. E27, GU10)
Figure 1.
Application diagram
SO16N
Table 1.
Device summary
Order codes Package
HVLED805
HVLED805TR
SO16N
Packaging
Tube
Tape and reel
Vin
VCC
Rdmg
DMG
Rfb
3.3V
PROTECTION &
FEEDFORWARD
LOGIC
DE MAG
LOGIC
CONSTANT
CURRENT
REGULATION
Vref
CONSTANT
VOLTAGE
REGULATION
Vc
COMP
Rcomp
ILED
CLED
GND
Cc omp
HV start-up &
SUPPLY LOGIC
Vref
DRIVING
LOGIC
OCP
1V
SOURCE
DRAIN
Rsens e
LED
...
October 2010 Doc ID 18077 Rev 1 1/29 www.st.com
29
Contents
Contents
HVLED805
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Power section and gate driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
High voltage startup generator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Secondary side demagnetization detection and triggering block . . . . . . . 15
Constant voltage operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Voltage feedforward block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Burst-mode operation at no load or very light load . . . . . . . . . . . . . . . . . . 22
Layout recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
2/29 Doc ID 18077 Rev 1
HVLED805
1 Description
Description
The HVLED805 is a high-voltage primary switcher intended for operating directly from the rectified mains with minimum external parts to provide an efficient, compact and cost effective solution for LED driving. It combines a high-performance low-voltage PWM controller chip and an 800V, avalanche-rugged power MOSFET, in the same package.
The PWM is a current-mode controller IC specifically designed for ZVS (zero voltage switching) fly-back LED drivers, with constant output current (CC) regulation using primarysensing feedback. This eliminates the need for the opto-coupler, the secondary voltage reference, as well as the current sense on the secondary side, still maintaining a good LED current accuracy. Moreover it guarantees a safe operation when short circuit of one or more
LEDs occurs.
In addition, the device can also provide a constant output voltage regulation (CV): it makes the application able to work safely when the LED string opens due to a failure.
Quasi-resonant operation is achieved by means of a transformer demagnetization sensing input that triggers MOSFET’s turn-on. This input serves also as both output voltage monitor, to perform CV regulation, and input voltage monitor, to achieve mains-independent CC regulation (line voltage feed forward).
The maximum switching frequency is top-limited below 166 kHz, so that at medium-light load a special function automatically lowers the operating frequency still maintaining the operation as close to ZVS as possible. At very light load, the device enters a controlled burst-mode operation that, along with the built-in high-voltage start-up circuit and the low operating current of the device, helps minimize the residual input consumption.
Although an auxiliary winding is required in the transformer to correctly perform CV/CC regulation, the chip is able to power itself directly from the rectified mains. This is useful especially during CC regulation, where the fly-back voltage generated by the winding drops.
In addition to these functions that optimize power handling under different operating conditions, the device offers protection features that considerably increase end-product’s safety and reliability: auxiliary winding disconnection or brownout detection and shorted secondary rectifier or transformer’s saturation detection. All of them are auto restart mode.
Doc ID 18077 Rev 1 3/29
Maximum ratings HVLED805
Table 2.
Symbol
Absolute maximum ratings
Pin Parameter
V
DS
I
D
E av
V cc
I
DMG
V comp
P tot
T
J
T stg
1,2, 13-16 Drain-to-source (ground) voltage
1,2, 13-16 Drain current
(1)
1,2, 13-16 Single pulse avalanche energy (T j
= 25°C, I
D
= 0.7A)
3 Supply voltage (Icc < 25mA)
6
7
Zero current detector current
Analog input
Power dissipation @T
A
= 50°C
Junction temperature range
Storage temperature
1.
Limited by maximum temperature allowed.
Value Unit
-1 to 800
1
50
V
A mJ
Self limiting V
±2 mA
-0.3 to 3.6
0.9
V
W
-40 to 150 °C
-55 to 150 °C
Table 3.
Symbol
R thJP
R thJA
Thermal data
Parameter
Thermal resistance, junction-to-pin
Thermal resistance, junction-to-ambient
Max. value Unit
10
110
°C/W
4/29 Doc ID 18077 Rev 1
HVLED805 Electrical characteristics
T
J
= -25 to 125 °C, Vcc=14 V; unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter Test condition Min.
Typ. Max. Unit
Start-up timer
T
RESTART
Start timer period
T
START
Restart timer period during burst mode
Demagnetization detector
I
DMGb
Input bias current V
DMG
= 0.1 to 3V
Doc ID 18077 Rev 1
105 140 175 µs
420 500 700 µs
0.1
1 µA
5/29
Electrical characteristics HVLED805
Table 4.
Symbol
Electrical characteristics (continued)
Parameter
R
FF
Equivalent feedforward resistor
Transconductance error amplifier
Test condition
I
V
DMGH
V
DMGL
V
DMGA
V
DMGT
DMGON
T
BLANK
Upper clamp voltage
Lower clamp voltage
Arming voltage
Triggering voltage
I
I
DMG
DMG
= 1 mA
= - 1 mA positive-going edge negative-going edge
Min. source current during MOSFET ON-time
Trigger blanking time after MOSFET’s turn-off
V
COMP
≥
1.3V
V
COMP
= 0.9V
Line feedforward
I
DMG
= 1mA
V
REF gm
Voltage reference
Transconductance
I
Gv
GB
COMP
Voltage gain
Gain-bandwidth product
Source current
Sink current
V
COMPH
V
COMPL
Upper COMP voltage
Lower COMP voltage
V
COMPBM
Burst-mode threshold
Hys Burst-mode hysteresis
Min.
Typ. Max. Unit
3.0
3.3
3.6
V
-90 -60 -30 mV
100 110 120 mV
50 60 70 mV
-25 -50 -75 µA
6
30
µs
45
Ω
Tj = 25 °C
(1)
Tj = -25 to 125°C and
Vcc=12V to 23V
(1)
Δ
I
COMP
= ±10 µA
V
COMP
= 1.65 V
Open loop
2.45
2.4
1.3
2.51
2.2
73
500
V
DMG
= 2.3V, V
COMP
= 1.65V
70 100
V
DMG
= 2.7V, V
COMP
= 1.65V
400 750
V
DMG
= 2.3V
2.7
V
DMG
= 2.7V
0.7
1
65
2.57
2.6
3.2
V mS dB kHz
µA
µA
V
V
V mV
Current reference
V
ILEDx
V
CLED
Maximum value
Current reference voltage
Current sense
V
COMP
= V
COMPL
(1)
1.5
1.6
1.7
V
0.192
0.2
0.208
V t
LEB
Leading-edge blanking t d(H-L) Delay-to-output
V
CSx
V
CSdis
Max. clamp value
Hiccup-mode OCP level
1.
Parameters tracking each other
(1) dVcs/dt = 200 mV/µs
(1)
200 250 300 ns
300 ns
0.7
0.75
0.8
V
0.92
1 1.08
V
6/29 Doc ID 18077 Rev 1
HVLED805 Pin connection
Figure 2.
Pin connection (top view)
SOURCE 1
2 SOURCE
VCC
GND
ILED
DMG
COMP
N.A.
3
4
5
6
7
8
14
13
12
11
16
15
10
9
N.A.
N.A.
N.A.
DRAIN
DRAIN
DRAIN
DRAIN
N.C.
Note: The copper area for heat dissipation has to be designed under the drain pins
Doc ID 18077 Rev 1 7/29
Pin connection HVLED805
Table 5.
N.
Pin functions
Name Function
1, 2 SOURCE
Power section source and input to the PWM comparator. The current flowing in the MOSFET is sensed through a resistor connected between the pin and GND. The resulting voltage is compared with an internal reference (0.75V typ.) to determine MOSFET’s turn-off. The pin is equipped with 250 ns blanking time after the gate-drive output goes high for improved noise immunity. If a second comparison level located at 1V is exceeded the IC is stopped and restarted after Vcc has dropped below 5V.
3
4
VCC
GND
Supply Voltage of the device. An electrolytic capacitor, connected between this pin and ground, is initially charged by the internal high-voltage start-up generator; when the device is running the same generator will keep it charged in case the voltage supplied by the auxiliary winding is not sufficient. This feature is disabled in case a protection is tripped. Sometimes a small bypass capacitor (100nF typ.) to GND might be useful to get a clean bias voltage for the signal part of the IC.
Ground. Current return for both the signal part of the IC and the gate drive. All of the ground connections of the bias components should be tied to a trace going to this pin and kept separate from any pulsed current return.
5
6
7
8-11
12
ILED
DMG
COMP
N.A
N.C
CC regulation loop reference voltage. An external capacitor will be connected between this pin and GND. An internal circuit develops a voltage on this capacitor that is used as the reference for the MOSFET’s peak drain current during CC regulation. The voltage is automatically adjusted to keep the average output current constant.
Transformer’s demagnetization sensing for quasi-resonant operation. Input/output voltage monitor. A negative-going edge triggers MOSFET’s turn-on. The current sourced by the pin during MOSFET’s ON-time is monitored to get an image of the input voltage to the converter, in order to compensate the internal delay of the current sensing circuit and achieve a CC regulation independent of the mains voltage. If this current does not exceed 50µA, either a floating pin or an abnormally low input voltage is assumed, the device is stopped and restarted after Vcc has dropped below 5V. Still, the pin voltage is sampled-and-held right at the end of transformer’s demagnetization to get an accurate image of the output voltage to be fed to the inverting input of the internal, transconductance-type, error amplifier, whose noninverting input is referenced to 2.5V. Please note that the maximum I
DMG
sunk/sourced current has to not exceed ±2 mA (AMR) in all the Vin range conditions. No capacitor is allowed between the pin and the auxiliary transformer.
Output of the internal transconductance error amplifier. The compensation network will be placed between this pin and GND to achieve stability and good dynamic performance of the voltage control loop.
Not available. These pins must be left not connected
13 to 16 DRAIN
Not internally connected. Provision for clearance on the PCB to meet safety requirements.
Drain connection of the internal power section. The internal high-voltage start-up generator sinks current from this pin as well. Pins connected to the internal metal frame to facilitate heat dissipation.
8/29 Doc ID 18077 Rev 1
HVLED805
Figure 3.
C
OSS
output capacitance variation
500
C
OSS
(pF)
400
300
200
100
0
0 25 50
V
75
(V)
DS
100 125 150
Pin connection
Figure 4.
Off state drain and source current test circuit
+
-
1 4V
A
Idss
2.5V
D MG
COM P IL ED
V CC
CUR RE NT
CON TR OL
D RA IN
G ND S OUR CE
+
-
V in
75 0V
Note: The measured I
DSS
is the sum between the current across the 12 M Ω start-up resistor (62.5
µA typ. @ 750 V) and the effective MOSFET’s off state drain current
Doc ID 18077 Rev 1 9/29
Pin connection
Figure 5.
Start-up current test circuit
Icc sta rt-u p
A
2.5V
D MG
+
-
1 1.8 V
COM P IL ED
V CC
CUR RE NT
CON TR OL
D RA IN
G ND
S OUR CE
HVLED805
10/29
Figure 6.
Quiescent current test circuit
Iq _m ea s
A
+
-
14 V
33 k
-
3V
+
2 .5V
DM G
C OMP ILE D
VC C
C UR REN T
C ONTRO L
DR AIN
GN D SO URC E
1 0k
+
0 .2V
+
0.8 V
Iq = Iq_meas -
3.3k
Ω
Doc ID 18077 Rev 1
HVLED805
Figure 7.
Operating supply current test circuit
Pin connection
10 k
27 k
2 20 k
2.5 V
D MG
10 k
1 0
5 0kHz
+
-
-5 V
Icc
A
+
-
15 V
V CC
CU RRE NT
CO NTR OL
DRA IN
1 .5k
2 W
+
-
15 0V
CO MP IL ED
GND
S OU RCE
5 .6
+ 2 .8V
-
Note: The circuit across the DMG pin is used for switch-on synchronization
Figure 8.
Quiescent current during fault test circuit
Iq (fa ult)
A
+
-
1 4V
2.5V
D MG
COM P IL ED
V CC
CUR RE NT
CON TR OL
D RA IN
G ND
S OUR CE
Doc ID 18077 Rev 1 11/29
Application information HVLED805
The HVLED805 is an off-line all-primary sensing switching regulator, specific for offline LED drivers based on quasi-resonant ZVS (zero voltage switching at switch turn-on) flyback topology.
Depending on converter’s load condition, the device is able to work in different modes
(
Figure 9 for constant voltage operation):
1.
QR mode at heavy load. Quasi-resonant operation lies in synchronizing MOSFET's turn-on to the transformer’s demagnetization by detecting the resulting negative-going edge of the voltage across any winding of the transformer. Then the system works close to the boundary between discontinuous (DCM) and continuous conduction
(CCM) of the transformer. As a result, the switching frequency will be different for
different line/load conditions (see the hyperbolic-like portion of the curves in Figure 9
).
Minimum turn-on losses, low EMI emission and safe behavior in short circuit are the main benefits of this kind of operation. The resulting constant current mode fixes the average current also in case of a short-circuit failure of one or more LEDs.
2. Valley-skipping mode at medium/ light load. Depending on voltage on COMP pin, the device defines the maximum operating frequency of the converter. As the load is reduced MOSFET’s turn-on will not any more occur on the first valley but on the second one, the third one and so on. In this way the switching frequency will no longer increase
(piecewise linear portion in
3. Burst-mode with no or very light load. When the load is extremely light or disconnected, the converter will enter a controlled on/off operation with constant peak current.
Decreasing the load will then result in frequency reduction, which can go down even to few hundred hertz, thus minimizing all frequency-related losses and making it easier to comply with energy saving regulations or recommendations. Being the peak current very low, no issue of audible noise arises. Thanks to this feature, the application is able to safely manage the open circuit caused by an LED failure.
Figure 9.
Multi-mode operation of HVLED805 (Constant voltage operation) f f f f f f
12/29
P
Doc ID 18077 Rev 1
HVLED805
5.1
Application information
Power section and gate driver
The power section guarantees safe avalanche operation within the specified energy rating as well as high dv/dt capability. The Power MOSFET has a V(BR)DSS of 800V min. and a typical R
DSon of 11
Ω .
The gate driver of the power MOSFET is designed to supply a controlled gate current during both turn-on and turn-off in order to minimize common mode EMI. Under UVLO conditions an internal pull-down circuit holds the gate low in order to ensure that the power MOSFET cannot be turned on accidentally.
5.2 High voltage startup generator
shows the internal schematic of the high-voltage start-up generator (HV generator). It includes an 800 V-rated N-channel MOSFET, whose gate is biased through the series of a 12 M
Ω
resistor and a 14 V zener diode, with a controlled, temperaturecompensated current generator connected to its source. The HV generator input is in common with the DRAIN pin, while its output is the supply pin of the device (Vcc). A mains
“UVLO” circuit (separated from the UVLO of the device that sense Vcc) keeps the HV generator off if the drain voltage is below V
START
(50 V typical value).
Figure 10.
High-voltage start-up generator: internal schematic
DRAIN
Vc c _O K
14 V 12M
Mai ns UV LO
H V_ EN
CO NTRO L
Ic ha rge
S OURCE
IHV
Vcc
With reference to the timing diagram of
, when power is applied to the circuit and the voltage on the input bulk capacitor is high enough, the HV generator is sufficiently biased to start operating, thus it will draw about 5.5 mA (typical) from the bulk capacitor.
Doc ID 18077 Rev 1 13/29
Application information HVLED805
Most of this current will charge the bypass capacitor connected between the Vcc pin and ground and make its voltage rise linearly.
As the Vcc voltage reaches the start-up threshold (13 V typ.) the chip starts operating, the internal power MOSFET is enabled to switch and the HV generator is cut off by the Vcc_OK signal asserted high. The IC is powered by the energy stored in the Vcc capacitor.
The chip is able to power itself directly from the rectified mains: when the voltage on the V
CC pin falls below Vcc restart
(10.5V typ.) , during each MOSFET’s off-time the HV current generator is turned on and charges the supply capacitor until it reaches the V
CCOn threshold.
In this way, the self-supply circuit develops a voltage high enough to sustain the operation of the device. This feature is useful especially during CC regulation, when the flyback voltage generated by the auxiliary winding alone may not be able to keep Vcc above V
CCrestart
.
At converter power-down the system will lose regulation as soon as the input voltage falls below V
Start
. This prevents converter’s restart attempts and ensures monotonic output voltage decay at system power-down.
Figure 11.
Timing diagram: normal power-up and power-down sequences
V Start
Vcc
ON
Vcc restart t t t t
I I charge
Normal operation
CV mode
Normal operation
CC mode t tt t tt t t
14/29 Doc ID 18077 Rev 1
HVLED805 Application information
5.3 Secondary demagnetization detection and triggering block
The demagnetization detection (DMG) and Triggering blocks switch on the power MOSFET if a negative-going edge falling below 50 mV is applied to the DMG pin. To do so, the triggering block must be previously armed by a positive-going edge exceeding 100 mV.
This feature is used to detect transformer demagnetization for QR operation, where the signal for the DMG input is obtained from the transformer’s auxiliary winding used also to supply the IC.
Figure 12.
DMG block, triggering block
Aux
R dmg
DMG
Rfb
D MG
CLAMP
110mV
60mV
BLAN KIN G
TIME
-
+
STAR TER
From CC/C V Block
TUR N-ON
LOGIC
S
LEB R
From OCP
Q
To Driver
The triggering block is blanked after MOSFET’s turn-off to prevent any negative-going edge that follows leakage inductance demagnetization from triggering the DMG circuit erroneously.
This blanking time is dependent on the voltage on COMP pin: it is T
BLANK
= 30 µs for V
COMP
= 0.9 V, and decreases almost linearly down to T
BLANK
= 6 µs for V
COMP
= 1.3 V
The voltage on the pin is both top and bottom limited by a double clamp, as illustrated in the internal diagram of the DMG block of
. The upper clamp is typically located at 3.3
V, while the lower clamp is located at -60mV. The interface between the pin and the auxiliary winding will be a resistor divider. Its resistance ratio as well as the individual resistance
values will be properly chosen (see “ Section 5.5: Constant current operation on page 18
”
and “ Section 5.6: Voltage feedforward block on page 20
”.
Please note that the maximum I
DMG
sunk/sourced current has to not exceed ±2 mA (AMR) in all the Vin range conditions. No capacitor is allowed between DMG pin and the auxiliary transformer.
The switching frequency is top-limited below 166 kHz, as the converter’s operating frequency tends to increase excessively at light load and high input voltage.
A Starter block is also used to start-up the system, that is, to turn on the MOSFET during converter power-up, when no or a too small signal is available on the DMG pin.
The starter frequency is 2 kHz if COMP pin is below burst mode threshold, i.e. 1 V, while it becomes 8 kHz if this voltage exceed this value.
Doc ID 18077 Rev 1 15/29
Application information HVLED805
After the first few cycles initiated by the starter, as the voltage developed across the auxiliary winding becomes large enough to arm the DMG circuit, MOSFET’s turn-on will start to be locked to transformer demagnetization, hence setting up QR operation.
The starter is activated also when the IC is in CC regulation and the output voltage is not high enough to allow the DMG triggering.
If the demagnetization completes – hence a negative-going edge appears on the DMG pin – after a time exceeding time T
BLANK
from the previous turn-on, the MOSFET will be turned on again, with some delay to ensure minimum voltage at turn-on. If, instead, the negativegoing edge appears before T
BLANK
has elapsed, it will be ignored and only the first negativegoing edge after T
BLANK
will turn-on the MOSFET. In this way one or more drain ringing cycles will be skipped (“valley-skipping mode”,
) and the switching frequency will be prevented from exceeding 1/T
BLANK
.
Figure 13.
Drain ringing cycle skipping as the load is progressively reduced
V
DS
V
DS
V
DS t
T osc
P in
= P in''
< P in' t
T osc
P in
= P in'''
< P in'' t
T
ON
T
FW
T osc
T
V
P in
= P in'
(limit condition)
Note: That when the system operates in valley skipping-mode, uneven switching cycles may be observed under some line/load conditions, due to the fact that the OFF-time of the MOSFET is allowed to change with discrete steps of one ringing cycle, while the OFF-time needed for cycle-by-cycle energy balance may fall in between. Thus one or more longer switching cycles will be compensated by one or more shorter cycles and vice versa. However, this mechanism is absolutely normal and there is no appreciable effect on the performance of the converter or on its output voltage.
The IC is specifically designed to work in primary regulation and the output voltage is sensed through a voltage partition of the auxiliary winding, just before the auxiliary rectifier diode.
shows the internal schematic of the constant voltage mode and the external connections.
16/29 Doc ID 18077 Rev 1
HVLED805 Application information
Figure 14.
Voltage control principle: internal schematic
Rdmg
DMG
Aux
Rfb
S/H
DEMAG
LOGIC
2.5V
-
+
EA
-
+
CV
To PWM Logic
From Rsense
COMP
R
C
Due to the parasitic wires resistance, the auxiliary voltage is representative of the output just when the secondary current becomes zero. For this purpose, the signal on DMG pin is sampled-and-held at the end of transformer’s demagnetization to get an accurate image of the output voltage and it is compared with the error amplifier internal reference.
During the MOSFET’s OFF-time the leakage inductance resonates with the drain capacitance and a damped oscillation is superimposed on the reflected voltage. The S/H logic is able to discriminate such oscillations from the real transformer’s demagnetization.
When the DMG logic detects the transformer’s demagnetization, the sampling process stops, the information is frozen and compared with the error amplifier internal reference.
The internal error amplifier is a transconductance type and delivers an output current proportional to the voltage unbalance of the two outputs: the output generates the control voltage that is compared with the voltage across the sense resistor, thus modulating the cycle-by-cycle peak drain current.
The COMP pin is used for the frequency compensation: usually, an RC network, which stabilizes the overall voltage control loop, is connected between this pin and ground.
The output voltage can be defined according the formula:
Equation 1
R
FB
=
V
REF n
AUX n
SEC
⋅
V
OUT
−
V
REF
⋅
R
DMG
Where n
SEC
and n
AUX
are the secondary and auxiliary turn’s number respectively.
The R
DMG
value can be defined depending on the application parameters (see “ Section 5.6:
Voltage feedforward block on page 20 ” section).
Doc ID 18077 Rev 1 17/29
Application information HVLED805
presents the principle used for controlling the average output current of the flyback converter.
The output voltage of the auxiliary winding is used by the demagnetization block to generate the control signal for the mosfet switch Q1. A resistor R in series with it absorbs a current
V
C
/R, where V
C
is the voltage developed across the capacitor C.
The flip-flop’s output is high as long as the transformer delivers current on secondary side.
This is shown in
The capacitor C has to be chosen so that its voltage V
C
can be considered as a constant.
Since it is charged and discharged by currents in the range of some ten µA (I
CLED
is typically 20 µA) at the switching frequency rate, a capacitance value in the range 4.7-10 nF is suited for switching frequencies in the ten kHz.
The average output current can be expressed as:
Equation 2
I
OUT
=
I
S
2
⋅
⎛
⎝
T
ONSEC
T
⎞
⎠
Where I
S
is the secondary peak current, T
ONSEC
is the conduction time of the secondary side and T is the switching period.
Taking into account the transformer ratio n between primary and secondary side, I
S
can also be expressed is a function of the primary peak current I
P
:
Equation 3
I
S
= n
⋅
I
P
As in steady state the average current I
C
:
Equation 4
I
CLED
⋅
(
T
−
T
ONSEC
)
+
⎛
⎝
I
CLED
−
V
C
R
⎞
⎠
⋅
T
ONSEC
=
0
Which can be solved for V
C
:
Equation 5
V
C
=
V
CLED
⋅
T
T
ONSEC
Where V
CLED
=R
•
I
LED
and is internally defined.
As V
C
is fed to the CC comparator, the primary peak current can be expressed as:
18/29 Doc ID 18077 Rev 1
HVLED805 Application information
Equation 6
I
P
=
V
C
R
SENSE
Combining (2), (3) (5) and (6):
Equation 7
I
OUT
= n
2
⋅
V
CLED
R
SENSE
This formula shows that the average output current does not depend anymore on the input or the output voltage, neither on transformer inductance values. The external parameters defining the output current are the transformer ratio n and the sense resistor R
SENSE
.
Figure 15.
Current control principle
.
Iref
-
+
CC
To PWM Logic
R
Q1
From R sense
R dmg
DMG
D EMAG
LOGIC
S
R
Q
Rfb
Aux
ILED
CLED
Doc ID 18077 Rev 1 19/29
Application information
Figure 16.
Constant current operation: Switching cycle waveforms
T
I
P t
I s t
Q t
I
C
I CLED t
I
CLED
= −
V
C
R
HVLED805
5.6 Voltage feedforward block
The current control structure uses the voltage V
C
to define the output current, according to
(7). Actually, the CC comparator will be affected by an internal propagation delay Td, which will switch off the MOSFET with a peak current than higher the foreseen value.
This current overshoot will be equal to:
Equation 8
Δ I
P
=
⋅
L
P d
Will introduce an error on the calculated CC setpoint, depending on the input voltage.
The HVLED805 implements a Line Feedforward function, which solves the issue by introducing an input voltage dependent offset on the current sense signal, in order to adjust the cycle-by-cycle current limitation.
The internal schematic is shown in Figure 17 .
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HVLED805 Application information
Figure 17.
Feedforward compensation: internal schematic
Aux
Rdmg DMG
Rfb
Feedforward
Logic
.
IFF
CC
Block
-
+
CC
PWM
LOGIC
DRAIN
RFF
SO URCE
Rsense
During MOSFET’s ON-time the current sourced from DMG pin is mirrored inside the
“ Feedforward Logic ” block in order to provide a feedforward current, I
FF
.
Such “feedforward current” is proportional to the input voltage according to the formula:
Equation 9
I
FF
= m
⋅
V
IN
R dmg
Where m is the primary-to-auxiliary turns ratio.
According to the schematic, the voltage on the non-inverting comparator will be:
Equation 10
⋅ I +I
FF
⋅ (
R +R
SENSE
)
The offset introduced by feedforward compensation will be:
Equation 11
V
OFFSET
= m
⋅
V
IN
R dmg
⋅
(
R
FF
+
R
SENSE
)
As R
FF
>>R
SENSE
, the previous one can be simplified as:
Equation 12
V
OFFSET
=
V
IN m
⋅
⋅
R
FF
R dmg
Doc ID 18077 Rev 1 21/29
Application information HVLED805
This offset is proportional to V
IN
and is used to compensate the current overshoot, according to the formula:
Equation 13
V
IN
⋅
T d
L p
⋅
R
SENSE
=
V
IN m
⋅
⋅
R
FF
R dmg
Finally, the R dmg
resistor can be calculated as follows:
Equation 14
R dmg
=
N
AUX
N
PRI
⋅
T d
L p
⋅
R
FF
⋅
R
SENSE
In this case the peak drain current does not depend on input voltage anymore.
One more consideration concerns the R dmg
value: during MOSFET’s ON-time, the current sourced by the DMG pin, I
DMG
, is compared with an internal reference current I
DMGON
(-50
µA typical).
If I
DMG
< I
DMGON
, the brownout function is activated and the IC is shut-down.
This feature is especially important when the auxiliary winding is accidentally disconnected and considerably increases the end-product’s safety and reliability.
5.7 Burst-mode operation at no load or very light load
When the voltage at the COMP pin falls 65 mV below a threshold fixed internally at a value,
V
COMPBM
, the IC is disabled with the MOSFET kept in OFF state and its consumption reduced at a lower value to minimize Vcc capacitor discharge.
In this condition the converter operates in burst-mode (one pulse train every T
START
=500
µs), with minimum energy transfer.
As a result of the energy delivery stop, the output voltage decreases: after 500 µs the controller switches-on the MOSFET again and the sampled voltage on the DMG pin is compared with the internal reference. If the voltage on the EA output, as a result of the comparison, exceeds the V
COMPL
threshold, the device restarts switching, otherwise it stays
OFF for another 500 µs period.
In this way the converter will work in burst-mode with a nearly constant peak current defined by the internal disable level. A load decrease will then cause a frequency reduction, which can go down even to few hundred hertz, thus minimizing all frequency-related losses and making it easier to comply with energy saving regulations. This kind of operation, shown in
the timing diagrams of Figure 19 along with the others previously described, is noise-free
since the peak current is low
22/29 Doc ID 18077 Rev 1
HVLED805 Application information
Figure 18.
Load-dependent operating modes: timing diagrams
COMP
V
COMPL
65 mV hyster.
I
DS
Normal-mode
T
START
T
START
T
START
Burst-mode
T
START
Normal-mode
5.8
5.9
Soft-start and starter block
The soft start feature is automatically implemented by the constant current block, as the primary peak current will be limited from the voltage on the C
LED
capacitor.
During start-up, as the output voltage is zero, the IC will start in CC mode with no high peak current operations. In this way the voltage on the output capacitor will increase slowly and the soft-start feature will be ensured.
Actually the C
LED
value is not important to define the soft-start time, as its duration depends on others circuit parameters, like transformer ratio, sense resistor, output capacitors and load. The user will define the best appropriate value by experiments.
Hiccup mode OCP
The device is also protected against short circuit of the secondary rectifier, short circuit on the secondary winding or a hard-saturated flyback transformer. A comparator monitors continuously the voltage on the R
SENSE
and activates a protection circuitry if this voltage exceeds 1 V.
To distinguish an actual malfunction from a disturbance (e.g. induced during ESD tests), the first time the comparator is tripped the protection circuit enters a “warning state”. If in the subsequent switching cycle the comparator is not tripped, a temporary disturbance is assumed and the protection logic will be reset in its idle state; if the comparator will be tripped again a real malfunction is assumed and the device will be stopped.
This condition is latched as long as the device is supplied. While it is disabled, however, no energy is coming from the self-supply circuit; hence the voltage on the V
CC
capacitor will decay and cross the UVLO threshold after some time, which clears the latch. The internal start-up generator is still off, then the V
CC
voltage still needs to go below its restart voltage
Doc ID 18077 Rev 1 23/29
Application information HVLED805 before the V
CC
capacitor is charged again and the device restarted. Ultimately, this will result in a low-frequency intermittent operation (Hiccup-mode operation), with very low stress on the power circuit. This special condition is illustrated in the timing diagram of
.
Figure 19.
Hiccup-mode OCP: timing diagram
Secondary diode is shorted here
V
CC
Vcc
ON
Vcc
OFF
Vcc rest
V
SOURCE
Vcs dis
1 V t t
V DS
Two switching cycles t
A proper printed circuit board layout is essential for correct operation of any switch-mode converter and this is true for the HVLED805 as well. Careful component placing, correct traces routing, appropriate traces widths and compliance with isolation distances are the major issues. In particular:
● The compensation network should be connected as close as possible to the COMP pin, maintaining the trace for the GND as short as possible
● Signal ground should be routed separately from power ground, as well from the sense resistor trace.
24/29 Doc ID 18077 Rev 1
HVLED805
Figure 20.
Suggested routing for converter
ACIN
ACIN
VDD DRAIN
DMG
HVLED805
COMP GND ILED SOURCE
Application information
LED
...
Doc ID 18077 Rev 1 25/29
Package mechanical data
6 Package mechanical data
HVLED805
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Table 6.
Dim.
SO16N mechanical data mm inch
Min Typ Max Min Typ Max a1 0.1 0.009 b b1 0.19
C 0.5
0.010
0.020
D (1) 9.8
E 5.8
10 0.386 0.394
0.244 e 1.27 0.050 e3 8.89 0.350
F (1)
G 4.60
L
0.208
26/29 Doc ID 18077 Rev 1
HVLED805
Figure 21.
Package dimensions
Package mechanical data
Doc ID 18077 Rev 1 27/29
Revision history
Table 7.
Date
Document revision history
Revision
14-Oct-2010 1 Initial release
Changes
HVLED805
28/29 Doc ID 18077 Rev 1
HVLED805
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