STGF10NB60SD
STGP10NB60SD
16 A, 600 V, low drop IGBT with soft and fast recovery diode
Features
■
■
■
Low on-voltage drop (V
CE(sat)
)
High current capability
Very soft ultra fast recovery antiparallel diode
Applications
■
■
■
Light dimmer
Static relays
Motor drive
Description
This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).
1
2
3
TO-220FP
TAB
TO-220
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order codes
STGF10NB60SD
STGP10NB60SD
Marking
GF10NB60SD
GP10NB60SD
September 2011
Package
TO-220FP
TO-220
Doc ID 11860 Rev 3
Packaging
Tube
Tube
1/15
www.st.com
15
3
4
5
1
2
Contents
Contents
STGF10NB60SD, STGP10NB60SD
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15 Doc ID 11860 Rev 3
STGF10NB60SD, STGP10NB60SD Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol Parameter
V
I
I
CES
C
(1)
C
(1)
I
CL
(2)
I
CP
(3)
V
GE
I
F
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at
T
C
= 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
I
FSM
V
ISO
Diode RMS forward current at T
C
= 25 °C
Surge non repetitive forward current t p
= 10 ms sinusoidal
Isolation withstand voltage (RMS) from all three leads to external heatsink
(t=1 s; T
C
= 25 °C)
Total dissipation at T
C
= 25 °C P
TOT
T j
Operating junction temperature
1.
Calculated according to the iterative formula
STGF10NB60SD STGP10NB60SD
600
23
12
2500
25
20
80
±20
20
55
– 55 to 150
29
16
80
Unit
V
A
A
A
V
V
A
A
A
W
°C
I
C
(
T
C
)
=
R thj – c
×
V
T –
) max )
(
T
C
T j max
)
,
I
C
(
T
C
) )
2.
Vclamp = 80% of V
CES
, T j
=150 °C, R
G
=1k
Ω, V
GE
=15 V
3.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Thermal data
Symbol Parameter
R thj-case
R thj-case
R thj-amb
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
Unit
STGF10NB60SD STGP10NB60SD
5
5.6
1.56
2.2
62.5
°C/W
°C/W
°C/W
Doc ID 11860 Rev 3 3/15
Electrical characteristics STGF10NB60SD, STGP10NB60SD
(T j
=25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter Test conditions
V
(BR)CES
Collector-emitter breakdown voltage (V
GE
= 0)
I
C
= 250 µA
V
(BR)ECS
I
I
GES
CES
Emitter-collector breakdown voltage (V
GE
= 0)
I
C
= 1 mA
Gate-emitter leakage current (V
CE
= 0)
V
GE
= ±20 V
Collector cut-off current
(V
GE
= 0)
V
V
CE
CE
= 600 V
= 600 V, T j
= 125 °C
V
GE(th)
Gate threshold voltage
V
CE(sat)
Collector-emitter saturation voltage
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 15 V, I
C
= 5 A
V
GE
= 15 V, I
C
= 10 A
V
GE
= 15 V, I
C
= 10 A,
T j
= 125 °C g fs
(1)
Forward transconductance V
CE
= 15 V
,
I
C
= 10 A
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Symbol
C ies
C oes
C res
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Q g
Total gate charge
Min.
Typ.
Max. Unit
600 V
20 V
±100 nA
2.5
5
10
100
5
1.15
1.35
1.75
µA
µA
V
V
1.25
S
V
CE
Test conditions
= 25 V, f = 1 MHz, V
GE
= 0
Min.
Typ.
Max.
Unit
-
610
65
12
pF pF pF
V
CE
= 400 V, I
C
= 10 A,
V
GE
= 15 V
(see Figure 19)
33 nC
4/15 Doc ID 11860 Rev 3
STGF10NB60SD, STGP10NB60SD Electrical characteristics
Table 6.
Symbol
t d(on) t r
(di/dt) on t r
(V off
) t d
( off
) t f
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time t r
(V off
) t d
( off
) t f
Switching on/off (inductive load)
Parameter Test conditions
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 k
Ω, V
GE
= 15 V
(see Figure 18)
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 k
Ω, V
GE
= 15 V
(see Figure 18)
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 k
Ω, V
GE
= 15 V,
T j
= 125 °C
(see Figure 18)
Min.
Typ.
Max. Unit
-
-
0.7
0.46
8
2.2
1.2
1.2
-
-
µs
µs
A/µs
µs
-
3.8
1.2
1.9
µs
Table 7.
Symbol
Eon
(1)
E off
(2)
E ts
E off
(2)
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-off switching losses
Test conditions
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 k
Ω, V
GE
= 15 V
(see Figure 18)
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 k
Ω, V
GE
= 15 V,
T j
= 125 °C
(see Figure 18)
Min.
Typ.
Max.
Unit
-
-
0.6
5
5.6
8 -
mJ mJ mJ mJ
1.
Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current.
Table 8.
Symbol
V
F t rr
Q rr
I rrm t rr
Q rr
I rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
F
= 10 A
I
F
= 10 A, T
C
= 125 °C
I
F
= 7 A, V
R
= 40 V, di/dt = 100 A/µs
(see Figure 21)
I
F
= 7 A, V
R
= 40 V,
T j
= 125 °C, di/dt = 100 A/µs
(see Figure 21)
Min Typ.
Max Unit
2.2
1.4
37
40
2.1
V
V ns nC
A
61
98
3.2
ns nC
A
Doc ID 11860 Rev 3 5/15
Electrical characteristics
Figure 2.
Output characteristics
STGF10NB60SD, STGP10NB60SD
Figure 3.
Transfer characteristics
Figure 4.
Transconductance Figure 5.
Collector-emitter on voltage vs. temperature
Figure 6.
Collector-emitter on voltage vs. collector current
Figure 7.
Normalized gate threshold vs. temperature
6/15 Doc ID 11860 Rev 3
STGF10NB60SD, STGP10NB60SD Electrical characteristics
Figure 8.
Normalized breakdown voltage vs. temperature
Figure 9.
Gate charge vs. gate-emitter voltage
Figure 10.
Capacitance variations Figure 11.
Switching losses vs. temperature
Figure 12.
Switching losses vs. gate resistance
Figure 13.
Switching losses vs. collector current
Doc ID 11860 Rev 3 7/15
Electrical characteristics
Figure 14.
Thermal impedance for TO-220
STGF10NB60SD, STGP10NB60SD
Figure 15.
Thermal impedance for TO-220FP
Figure 16.
Turn-off SOA Figure 17.
Forward voltage drop versus forward current
IFM(A)
45
40
35
30
25
20
15
10
5
0
0.0
0.5
1.0
Tj=150°C
(Maximum values)
(Typical values)
1.5
2.0
2.5
Tj=25°C
(Maximum values)
3.0
3.5
4.0
VFM(V)
8/15 Doc ID 11860 Rev 3
STGF10NB60SD, STGP10NB60SD
3 Test circuits
Figure 18.
Test circuit for inductive load switching
Figure 19.
Gate charge test circuit
Test circuits
Figure 20.
Switching waveforms Figure 21.
Diode recovery times waveform
Doc ID 11860 Rev 3 9/15
Package mechanical data
4 Package mechanical data
STGF10NB60SD, STGP10NB60SD
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/15 Doc ID 11860 Rev 3
STGF10NB60SD, STGP10NB60SD
Table 9.
TO-220FP mechanical data
Dim.
L5
L6
L7
Dia
G1
H
L2
L3
L4
F
F1
F2
G
D
E
A
B
28.6
9.8
2.9
15.9
9
3
Figure 22.
TO-220FP drawing
Min.
0.75
1.15
1.15
4.95
4.4
2.5
2.5
0.45
2.4
10
L7
A
B
Dia
L6
mm.
Typ.
16
L5
D
F1
F2
Package mechanical data
E
Max.
1
1.70
1.70
5.2
4.6
2.7
2.75
0.7
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
H
F
G1
G
L4
L2
L3
Doc ID 11860 Rev 3
7012510_Rev_K
11/15
Package mechanical data
D
D1
E e
A b b1 c e1
F
H1
J1
L
Table 10.
TO-220 type A mechanical data
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
L1
L20
L30
∅
P
Q
6.20
2.40
13
3.50
10
2.40
4.95
1.23
3.75
2.65
mm.
Typ.
1.27
16.40
28.90
STGF10NB60SD, STGP10NB60SD
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
12/15 Doc ID 11860 Rev 3
STGF10NB60SD, STGP10NB60SD
Figure 23.
TO-220 type A drawing
Package mechanical data
0015988_typeA_Rev_S
Doc ID 11860 Rev 3 13/15
Revision history STGF10NB60SD, STGP10NB60SD
Table 11.
Document revision history
Date
18-Nov-2005
16-Dec-2010
22-Sep-2011
Revision
1
2
3
Changes
New release.
Inserted device in TO-220FP.
Updated
Table 2: Absolute maximum ratings
,
Table 8: Collectoremitter diode
and packages mechanical data
Section 4:
Package mechanical data
.
Modified: unit value
Table 7 on page 5
,
Figure 2
and
Figure 3 on page 6
.
14/15 Doc ID 11860 Rev 3
STGF10NB60SD, STGP10NB60SD
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Doc ID 11860 Rev 3 15/15
