STMicroelectronics STGD6NC60HD Datasheet
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STGD6NC60HD
N-channel 600V - 7A - DPAK
Very fast PowerMESH™ IGBT
General features
Type V
CES
STGD6NC60HD 600V
V
CE(sat)
Max
@25°C
<2.5V
I
C
@100°C
7A
■
■
■
■
Low on voltage drop (V cesat
)
Low C
RES
/ C
IES
ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
High frequency operation
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances
(reduced tfall) maintaining a low voltage drop.
DPAK
1
3
Internal schematic diagram
Applications
■
■
■
High frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
Obsolete Product(s) - Obsolete Product(s)
Order codes
Part number
STGD6NC60HDT4
Marking
GD6NC60HD
Package
DPAK
Packaging
Tape & reel
February 2007 Rev 3 1/15 www.st.com
15
Contents
Contents
STGD6NC60HD
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STGD6NC60HD Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V
CES
I
C
(1)
I
C
(1)
I
CM
(2)
V
GE
I
F
P
TOT
T stg
T j
Collector-emitter voltage (V
Collector current (pulsed)
Gate-emitter voltage
Total dissipation at T
Storage temperature
C
GS
= 25°C
= 0)
Collector current (continuous) at T
Collector current (continuous) at T
C
C
= 25°C
= 100°C
Diode RMS forward current at Tc=25°C
Operating junction temperature
T l
Maximum lead temperature for soldering purpose
(for 10sec. 1.6 mm from case)
1.
Calculated according to the iterative formula:
I
C
( T
C
) =
R
THJ – C
×
T – T
C
V ( ) ( T
C
, I
C
)
2.
Pulse width limited by max junction temperature
Table 2.
Symbol
Thermal resistance
Parameter
Rthj-case Thermal resistance junction-case max
Value
600
15
7
21
±20
10
56
– 55 to 150
300
Value
2
62.5
Unit
°C/W
°C/W
A
A
V
A
W
Unit
V
A
°C
°C
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Electrical characteristics STGD6NC60HD
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
Static
Parameter Test conditions Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-emitter breakdown voltage
V
V
I
CE(sat)
I
GE(th)
CES
GES g fs
I
C
= 1mA, V
GE
= 0
Collector-emitter saturation voltage
V
GE
= 15V, I
C
= 3A
V
GE
= 15V, I
C
= 3A, Tc= 125°C
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= Max rating,T
C
= 25°C
V
CE
=Max rating,T
C
= 125°C
Gate-emitter leakage current (V
CE
= 0)
V
GE
= ±20V, V
CE
= 0
Forward transconductance V
CE
= 15V
,
I
C
= 3A
600
3.75
1.9
1.7
3
2.5
5.75
10
1
±100
V
V
V
V
µA mA nA
S
Table 4.
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
I
CL
Turn-off SOA minimum current
Test conditions
V
CE
= 25V, f = 1MHz,
V
GE
= 0
V
CE
= 390V, I
C
= 3A,
V
GE
= 15V,
V clamp
=390V, Tj=150°C,
R
G
=10 Ω , V
GE
=15V
Min.
Typ.
Max.
Unit
205
32
5.5
pF pF pF
13.6
3.4
5.1
nC nC nC
19 A
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STGD6NC60HD Electrical characteristics
Table 5.
Symbol t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope t r
(V off
) t d
( off
) t f t r
(V off
) t d
( off
) t f
Switching on/off (inductive load)
Parameter Test conditions t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390V, I
C
= 3A
R
G
= 10 Ω , V
GE
= 15V,
Tj= 25°C
V
CC
= 390V, I
C
= 3A
R
G
= 10 Ω , V
GE
= 15V,
Tj=125°C
V
CC
= 390V, I
C
= 3A,
R
GE
= 10 Ω , V
GE
=
15V,T
J
=25°C
V
CC
= 390V, I
C
= 3A,
R
GE
=10 Ω , V
GE
=15V,
Tj=125°C
Min.
Typ.
Max.
Unit
12
5
612 ns ns
A/µs
13
4.3
560
40
76
100 ns ns
A/µs ns ns ns
60
98
124 ns ns ns
Table 6.
Symbol
Switching energy (inductive load)
Parameter Test conditions Min.
Typ.
Max.
Unit
E on
(1)
E off
(2)
E ts
E on
(1)
E off
(2)
E ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390V, I
C
= 3A
R
G
= 10 Ω , V
GE
=15V,
Tj=25°C
V
CC
= 390V, I
C
= 3A
R
G
= 10 Ω , V
GE
= 15V,
Tj= 125°C
20
68
88
37
93
130
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current Obsolete Product(s) - Obsolete Product(s)
µJ
µJ
µJ
µJ
µJ
µJ
5/15
Electrical characteristics STGD6NC60HD
Table 7.
Symbol
V f t rr
Q rr
I rrm t rr
Q rr
I rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I f
= 1.5A
I f
= 1.5A, Tj = 125°C
I f
= 3A,V
R
= 40V,
Tj = 25°C, di/dt = 100 A/ µ s
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I f
= 3A,V
R
= 40V,
Tj =125°C, di/dt = 100A/ µ s
Min.
Typ.
Max.
Unit
1.6
1.3
2.1
V
V
21
14
1.36
ns nC
A
34
32
1.88
ns nC
A
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STGD6NC60HD
Figure 1.
Output characteristics
Electrical characteristics
Figure 2.
Transfer characteristics
Figure 3.
Transconductance Figure 4.
Collector-emitter on voltage vs temperature
Figure 5.
Gate charge vs gate-source voltage Figure 6.
Capacitance variations
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Electrical characteristics STGD6NC60HD
Figure 7.
Normalized gate threshold voltage vs temperature
Figure 8.
Collector-emitter on voltage vs collector current
Figure 9.
Normalized breakdown voltage vs temperature
Figure 10. Switching losses vs temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current
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STGD6NC60HD
Figure 13. Thermal Impedance
Electrical characteristics
Figure 14. Turn-off SOA
Figure 15. Emitter-collector diode characteristics
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Test circuit
3 Test circuit
Figure 16. Test circuit for inductive load switching
STGD6NC60HD
Figure 17. Gate charge test circuit
Figure 18. Switching waveform Figure 19. Diode recovery time waveform
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STGD6NC60HD
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data STGD6NC60HD
DIM.
L2
L4
V2
C2
D
E
G
H
B
B2
C
A
A1
A2
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
MIN.
2.20
0.90
0.03
0.60
0 o
TO-252 (DPAK) MECHANICAL DATA mm
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
0.8
1.00
8 o
0.024
0 o inch
TYP.
0.031
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
0.039
0 o
Obsolete Product(s) - Obsolete Product(s)
P032P_B
12/15
STGD6NC60HD
5 Packaging mechanical data
DPAK FOOTPRINT
Packaging mechanical data
All dimensions are in millimeters
A0
B0
B1
D
D1
E
TAPE MECHANICAL DATA mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
6.8
7 0.267
0.275
10.4
10.6
0.409
0.417
1.5
1.5
12.1
1.6
0.059
0.059
0.476
0.063
1.65
1.85
0.065
0.073
TAPE AND REEL SHIPMENT
G
N
T
A
B
C
D
REEL MECHANICAL DATA
DIM.
mm inch
MIN.
MAX.
MIN.
MAX.
330 12.992
1.5
0.059
12.8
13.2
0.504
0.520
20.2
0.795
16.4
18.4
0.645
0.724
50 1.968
22.4
0.881
BASE QTY
2500
BULK QTY
2500
P0
P1
P2
R
W
3.9
7.9
1.9
40
4.1
8.1
2.1
0.153
0.311
0.075
1.574
0.161
0.319
0.082
15.7
16.3
0.618
0.641
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Revision history
Table 8.
Date
04-Aug-2005
07-Mar-2006
07-Feb-2007
Revision history
Revision
1
2
3
Changes
First release
Complete version
The document has been reformatted
STGD6NC60HD
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STGD6NC60HD
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