STMicroelectronics STGW30NC60VD Datasheet
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STGW30NC60VD
40 A, 600 V, very fast IGBT with Ultrafast diode
Features
■
■
■
High current capability
High frequency operation up to 50 KHz
Very soft ultra fast recovery antiparallel diode
Applications
■
■
■
High frequency inverters, UPS
Motor drive
SMPS and PFC in both hard switch and resonant topologies
Description
This device utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
1
2
3
TO-247 long leads
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
STGW30NC60VD
Marking
GW30NC60VD
February 2011
Package
TO-247 long leads
Doc ID 13241 Rev 5
Packaging
Tube
1/13 www.st.com
13
Contents
Contents
STGW30NC60VD
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/13 Doc ID 13241 Rev 5
STGW30NC60VD Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
I
I
V
I
I
I
P
T
C
(1)
C
(1)
CP
(2)
CL
(3)
V
CES
I
GE
F
FSM
TOT
T
J
STG
T
L
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Turn-off latching current
Gate-emitter voltage
Diode RMS forward current at T
C
= 25 °C
Surge not repetitive forward current t
P
= 10 ms sinusoidal
Total dissipation at T
C
= 25 °C
Operating junction temperature
Storage temperature
Maximum lead temperature for soldering purpose for
10 sec
1.
Calculated according to the iterative formula:
I
C
(
T
C
)
=
R thj – c
×
V
T
) ( max
–
)
(
T
T j max
)
,
I
C
(
T
C
) )
2.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
3.
V clamp
= 80 % V
CES
, T
J
= 150 °C, R
G
= 10
Ω
, V
GE
= 15 V
120
250
– 55 to 150
300
Value
600
80
40
150
100
± 20
30
Table 3.
Symbol
R thJC
R thJA
Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.5
1.5
50
Unit
°C/W
°C/W
°C/W
Unit
V
A
A
A
V
A
A
A
W
°C
°C
Doc ID 13241 Rev 5 3/13
Electrical characteristics STGW30NC60VD
T
J
= 25 °C unless otherwise specified.
Table 4.
Symbol
Static
Parameter Test conditions
V
V
(BR)CES
V
CE(sat)
I
GE(th)
CES
Collector-emitter breakdown voltage (V
GE
= 0)
I
C
= 1 mA
Collector-emitter saturation voltage
Gate threshold voltage
V
GE
= 15 V, I
C
=20 A
V
GE
= 15 V, I
C
=40 A
V
GE
= 15 V, I
C
=80 A,T j
=100 °C
V
GE
= 15 V, I
C
=20 A,T j
=125 °C
V
CE
= V
GE
, I
C
= 250 µA
Collector-cut-off current
(V
GE
= 0)
V
CE
= 600 V
V
CE
= 600 V, T j
= 125 °C
I
GES
Gate-emitter leakage current (V
CE
= 0)
V
GE
= ± 20V g fs
Forward V
CE
= 15 V
,
I
C
= 20 A
Min.
Typ.
Max. Unit
600
3.75
1.8
2.1
2.9
1.7
15
2.5
V
V
5.75
V
10
1
µA mA
±100 nA
S
Table 5.
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
V
CE
= 25V, f = 1 MHz, V
GE
= 0
V
CE
= 390V, I
V
GE
= 15V,
C
= 20A,
Min.
Typ.
Max. Unit
-
-
2200
225
50
100
16
45
pF pF pF
140 nC nC nC
Table 6.
Symbol
Switching on/off (inductive load)
Parameter t d(on) t r
(di/dt) onf t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Test conditions
V
CC
=390 V, I
C
= 20 A,
R
G
=3.3
Ω,
V
GE
=15V
V
CC
=390 V, I
C
= 20 A,
R
G
=3.3
Ω,
V
GE
=15 V
T j
Min.
Typ.
Max.
Unit
-
-
31
11
1600
31
11.5
1500
-
ns ns
A/µs ns ns
A/µs
4/13 Doc ID 13241 Rev 5
STGW30NC60VD Electrical characteristics
Table 6.
t r(Voff) t d(off) t f t r(Voff) t d(off) t f
Switching on/off (inductive load)
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
=390 V, I
C
= 20 A,
R
G
=3.3
Ω,
V
GE
=15 V
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
=390 V, I
C
= 20 A,
R
G
=3.3
Ω,
V
GE
=15 V
T j
-
-
28
100
75
66
150
130
-
ns ns ns ns ns ns
Table 7.
Symbol
Switching energy (inductive load)
Parameter Test conditions Min.
Typ.
Max.
Unit
E
E on
(1)
E off
E ts on
(1)
E off
E ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
=390 V, I
C
= 20 A,
R
G
=3.3
Ω,
V
GE
=15 V,
V
CC
=390 V, I
C
= 20 A,
R
G
=3.3
Ω,
V
GE
=15 V,
Tj= 125°C
-
-
220
330
550
450
770
1220
300
450
750
-
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in
. Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
µJ
µJ
µJ
µJ
µJ
µJ
V
F t rr
Q rr
I rrm t rr
Q rr
I rrm
Table 8.
Symbol
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
F
= 20 A
I
F
= 20 A, T j
= 125°C
I
F
= 20 A, V
R
= 40 V,
T j
= 25°C, di/dt =100 A/µs
I
F
= 2 0A, V
R
= 40 V,
T j
= 125°C, di/dt =100 A/µs
Min.
Typ.
Max.
Unit
2.3
-
-
1.8
1.4
44
66
3
-
V
V ns nC
A
-
88
237
5.4
ns nC
A
Doc ID 13241 Rev 5 5/13
Electrical characteristics
Figure 2.
Output characteristics
STGW30NC60VD
Figure 3.
Transfer characteristics
Figure 4.
Trans conductance Figure 5.
Collector-emitter on voltage vs temperature
Figure 6.
Collector-emitter on voltage vs collector current
Figure 7.
Normalized gate threshold vs temperature
6/13 Doc ID 13241 Rev 5
STGW30NC60VD Electrical characteristics
Figure 8.
Normalized breakdown voltage vs temperature
Figure 9.
Gate charge vs. gate-emitter voltage
Figure 10. Capacitance variations Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs collector current
Doc ID 13241 Rev 5 7/13
Electrical characteristics
Figure 14. Thermal impedance Figure 15. Turn-off SOA
STGW30NC60VD
Figure 16.
Emitter-collector diode characteristics
)
&
!
!-V
4
*
#
MAXIMUMVALUES
4
*
#
TYPICALVALUES
4
*
#
MAXIMUMVALUES
6
&
6
8/13 Doc ID 13241 Rev 5
STGW30NC60VD
3 Test circuits
Figure 17.
Test circuit for inductive load switching
Figure 18.
Gate charge test circuit
Test circuits
Figure 19.
Switching waveforms Figure 20.
Diode recovery times waveform
Doc ID 13241 Rev 5 9/13
Package mechanical data
4 Package mechanical data
STGW30NC60VD
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
L
L1
L2
L3
L4
L5
E
F
A
D
F1
F2
G
H
M
V
V1
V3
Dia.
Table 9.
Dim.
TO-247 long leads mechanical data mm.
Min.
4.90
1.85
0.55
1.07
1.90
2.87
Typ.
10.90 BSC
15.77
20.82
4.16
5.49
20.05
3.68
6.04
2.27
10°
3°
20°
3.55
Max.
5.15
2.10
0.67
1.32
2.38
3.38
16.02
21.07
4.47
5.74
20.30
3.93
6.29
2.52
3.66
10/13 Doc ID 13241 Rev 5
STGW30NC60VD
Figure 21.
TO-247 long leads drawing
Package mechanical data
Doc ID 13241 Rev 5 11/13
Revision history STGW30NC60VD
Table 10.
Document revision history
Date Revision
12-Feb-2007
19-Feb-2007
12-Mar-2010
03-Jan-2011
23-Feb-2011
1
2
3
4
5
Changes
First release.
has been updated
Inserted I
FSM
parameter on Table 2: Absolute maximum ratings .
Updated Figure 16: Emitter-collector diode characteristics and
package mechanical data.
Table 8: Collector-emitter diode
and
.
Added T
L
row
.
12/13 Doc ID 13241 Rev 5
STGW30NC60VD
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Doc ID 13241 Rev 5 13/13
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