STGB10HF60KD
STGF10HF60KD, STGP10HF60KD
10 A - 600 V - short-circuit rugged IGBT
Features
■
■
■
■
■
■
Low on-voltage drop (V
CE(sat)
)
Operating junction temperature up to 175 °C
Low C res
/ C ies susceptibility)
ratio (no cross conduction
Tight parameter distribution
Ultrafast soft-recovery antiparallel diode
Short-circuit rugged
Applications
■
■
■
Motor drives
High frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Description
This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies.
1
TO-220FP
2
3
TAB
TO-220
1
2
3
1
3
D²PAK
Figure 1.
Internal schematic diagram
Obsolete Product(s) - Obsolete Product(s)
Table 1.
Device summary
Order codes
STGB10HF60KDT4
STGF10HF60KD
STGP10HF60KD
Marking
GB10HF60KD
GF10HF60KD
GP10HF60KD
Package
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
February 2012 Doc ID 16136 Rev 2 1/13 www.st.com
13
3
4
1
2
5
Contents
Contents
STGx10HF60KD
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Obsolete Product(s) - Obsolete Product(s)
2/13 Doc ID 16136 Rev 2
STGx10HF60KD Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol Parameter
V
CES
I
C
(1)
I
C
(1)
I
CL
(2)
I
CP
(3)
V
GE
I
F
Collector-emitter voltage (V
GE
= 0)
Collector current (continuous) at T
C
= 25 °C
Collector current (continuous) at T
C
= 100 °C
Turn-off latching current
Pulsed collector current
I
FSM
Gate-emitter voltage
Diode RMS forward current at T
C
= 25 °C
Surge non repetitive forward current t p
= 10 ms sinusoidal
V
ISO
Isolations withstand voltage (RMS) from all three leads to external heat sink (t=1 s; T
C
= 25 °C)
P t
TOT scw
Total dissipation at T
C
= 25 °C
Short-circuit withstand time, V
CE
= 0.5V
(BR)CES
,
T
C
= 125 °C, R
G
= 10 Ω, V
GE
= 12 V
T j
Operating junction temperature
1.
Calculated according to the iterative formula:
D²PAK, TO-220
600
20
10
-
80
TBD
TBD
±20
10
20
5
– 40 to 175
I
C
( T
C
) = -------------------------------------------------------------------------------------------------------
R thj – c
V
T
)
) ( max
–
)
(
T
T
)
I
C
( T
C
) )
2.
Vclamp = 80% of V
CES
, T j
=175 °C, R
G
=10
Ω
, V
GE
=15 V
3.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
TO-220FP
Unit
9
6
V
A
A
A
A
V
A
A
2500
30
µs
°C
V
W
Table 3.
Thermal data
Parameter
R thj-case
R thj-case
R thj-amb
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
D²PAK
TO-220
1.8
4
62.5
Value
TO-220FP
Unit
5
7
62.5
°C/W
°C/W
°C/W
Doc ID 16136 Rev 2 3/13
Electrical characteristics STGx10HF60KD
T j
= 25 °C unless otherwise specified.
Table 4.
Symbol
Static
Parameter Test conditions Min.
Typ.
Max. Unit
V
V
(BR)CES
V
I
CE(sat)
I
GE(th)
GES
CES
Collector-emitter breakdown voltage (V
GE
= 0)
I
C
= 1 mA
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 5 A
V
GE
= 15 V, I
C
= 5 A, T j
= 150 °C
Gate threshold voltage
Gate-emitter leakage current (V
CE
= 0)
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= ±20 V, T g fs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5% j
= 150 °C
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V
V
CE
= 600 V, T j
= 150 °C
Forward transconductance V
CE
= 15 V
,
I
C
= 5 A
600
4.5
2
1.6
3
6.5
±100
150
1
V
V
V
V nA
µA mA
S
Table 5.
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 25 V, f = 1 MHz, V
GE
= 0
V
CE
V
GE
Test conditions
= 390 V, I
= 15 V
(see Figure 3)
C
= 5 A,
Min.
Typ.
Max. Unit
-
-
TBD
TBD
TBD
TBD
TBD
TBD
-
pF pF pF nC nC nC
Obsolete Product(s) - Obsolete Product(s)
4/13 Doc ID 16136 Rev 2
STGx10HF60KD Electrical characteristics
Table 6.
Symbol
Switching on/off (inductive load)
Parameter Test conditions t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope t r
(V off
) t d
( off
) t f t r
(V off
) t d
( off
) t f
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390 V, I
C
= 5 A
R
G
= 10 Ω , V
GE
= 15 V,
(see Figure 2)
V
CC
= 390 V, I
C
= 5 A
R
G
= 10
Ω
, V
GE
= 15 V,
T j
= 150 °C
(see Figure 2)
V
CC
= 390 V, I
C
= 5 A,
R
GE
= 10 Ω , V
GE
= 15 V
(see Figure 2)
V
CC
= 390 V, I
C
= 5 A,
R
GE
= 10 Ω , V
GE
= 15 V
T j
= 150 °C
(see Figure 2)
Min.
Typ.
Max. Unit
-
TBD
TBD
TBD
ns ns
A/µs
-
-
-
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
-
-
ns ns ns ns ns
A/µs ns ns ns
Table 7.
Symbol
Eon
(1)
E off
(2)
E ts
Eon
E
E
(1) off
(2) ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
V
CC
= 390 V, I
C
= 5 A
R
G
= 10 Ω , V
GE
= 15 V,
(see Figure 2)
V
CC
= 390 V, I
C
= 5 A
R
G
= 10 Ω , V
GE
= 15 V,
T j
= 150 °C
(see Figure 2)
Min Typ.
Max Unit
-
-
TBD
TBD
TBD
TBD
TBD
TBD
-
-
1.
Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current.
µJ
µJ
µJ
µJ
µJ
µJ
Table 8.
Collector-emitter diode
Obsolete Product(s) - Obsolete Product(s)
I
F
= 5 A
Min Typ.
Max Unit
V
F
Forward on-voltage -
2.1
2.4
V
I
F
= 5 A, T j
= 150 °C 1.8
V t rr
Q rr
I rrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
F
= 5 A, V
R
= 40 V, di/dt = 100 A/µs
(see Figure 5)
-
24
17
1.5
ns nC
A t rr
Q rr
I rrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
F
= 5 A, V
R
= 40 V,
T j
= 150 °C, di/dt = 100 A/µs
(see Figure 5)
-
TBD
TBD
TBD ns nC
A
Doc ID 16136 Rev 2 5/13
Test circuits
3 Test circuits
Figure 2.
Test circuit for inductive load switching
STGx10HF60KD
Figure 3.
Gate charge test circuit
Figure 4.
V
CE
V
G
Switching waveforms
I C
Td(on)
Ton
Tr(Ion)
90 %
10 %
Tr(Voff)
Tcro ss
Td(off)
Toff
Tf
90 %
10 %
AM01504v1 AM01505v1
Figure 5.
Diode recovery times waveform di/dt Q rr
I
F
90 %
10 % t a t rr t b
I
RRM
I
RRM t
V
F di/dt
AM01506v1 AM01507v1
Obsolete Product(s) - Obsolete Product(s)
6/13 Doc ID 16136 Rev 2
STGx10HF60KD
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 9.
D²PAK (TO-263) mechanical data mm
Dim.
Min.
Typ.
Max.
c c2
D
D1
E
E1
A
A1 b b2
J1
L
L1
L2 e e1
H
0.45
1.23
8.95
7.50
10
8.50
4.40
0.03
0.70
1.14
4.88
15
2.49
2.29
1.27
1.30
2.54
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
R 0.4
V2 0° 8°
Obsolete Product(s) - Obsolete Product(s)
Doc ID 16136 Rev 2 7/13
Package mechanical data
Figure 6.
D²PAK (TO-263) drawing
STGx10HF60KD
0079457_T
Obsolete Product(s) - Obsolete Product(s)
8/13 Doc ID 16136 Rev 2
STGx10HF60KD
Table 10.
TO-220FP mechanical data
Dim.
F
F1
F2
G
G1
H
A
B
D
E
L5
L6
L7
Dia
L2
L3
L4
28.6
9.8
2.9
15.9
9
3
Figure 7.
TO-220FP drawing
Min.
0.75
1.15
1.15
4.95
2.4
10
4.4
2.5
2.5
0.45
L7
A
B
Di a
L6 mm
Typ.
16
L5
D
Package mechanical data
E
Max.
1
1.70
1.70
5.2
2.7
10.4
4.6
2.7
2.75
0.7
30.6
10.6
3.6
16.4
9.3
3.2
F2
H
F
G1
G
L4
L2
L 3
Doc ID 16136 Rev 2
7012510_Rev_K
9/13
Package mechanical data
D
D1
E e e1
F
H1
J1
L
A b b1 c
Table 11.
TO-220 type A mechanical data
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
L1
L20
L30
∅
P
Q
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
mm
Typ.
1.27
16.40
28.90
STGx10HF60KD
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Obsolete Product(s) - Obsolete Product(s)
10/13 Doc ID 16136 Rev 2
STGx10HF60KD
Figure 8.
TO-220 type A drawing
Package mechanical data
00159 88 _typeA_Rev_ S
Obsolete Product(s) - Obsolete Product(s)
Doc ID 16136 Rev 2 11/13
Revision history STGx10HF60KD
Table 12.
Document revision history
Date Revision
18-Aug-2009
23-Feb-2012
1
2
Changes
Initial release.
The part number STGD10HF60KD has been moved to a separate datasheet.
Document promoted from preliminary data to full datasheet -
Modified Description text on the coverpage.
Obsolete Product(s) - Obsolete Product(s)
12/13 Doc ID 16136 Rev 2
STGx10HF60KD
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