STD44N4LF6
N-channel 40 V, 8.9 m
Ω
, 44 A DPAK
STripFET™ VI DeepGATE™ Power MOSFET
Features
Order code
STD44N4LF6
V
DSS
40 V
■
■
100% avalanche tested
Logic level drive
R
DS(on) max
12.5 m Ω
I
D
44 A
Applications
■
■
Switching applications
Automotive
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R
DS(on)
in all packages.
1
3
DPAK
Figure 1.
Internal schematic diagram
$4!"OR
'
3
!-V
Table 1.
Device summary
Order code
STD44N4LF6
Marking
44N4LF6
Package
DPAK
Packaging
Tape and reel
October 2011 Doc ID 17171 Rev 4 1/15 www.st.com
15
5
6
3
4
1
2
Contents
Contents
STD44N4LF6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15 Doc ID 17171 Rev 4
STD44N4LF6 Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage (V
Gate-source voltage
GS
= 0)
Drain current (continuous) at T
C
Drain current (continuous) at T
C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Derating factor
T stg
T j
Storage temperature
Operating junction temperature
1.
Pulse is rated according SOA
= 25 °C
= 100 °C
Table 3.
Symbol
Thermal resistance
Parameter
R thj-case
Thermal resistance junction-case max
R thj-pcb
Thermal resistance junction-pcb max
1.
When mounted on 1 inch
2
, 2 oz Cu.
(1)
Table 4.
Symbol
Avalanche data
Parameter
I
AV
E
AS
(1)
Not-repetitive avalanche current
Single pulse avalanche energy
1.
Starting Tj = 25 °C, I
D
= I
AV
, V
DD
= 24 V
Value
40
± 20
44
31
176
50
0.33
- 55 to 175
Unit
V
V
A
A
A
W
W/°C
°C
Value
3
50
Unit
°C/W
°C/W
Value
20
150
Unit
A mJ
Doc ID 17171 Rev 4 3/15
Electrical characteristics STD44N4LF6
(T
CASE
= 25 °C unless otherwise specified)
Table 5.
Symbol
Static
Parameter
V
(BR)DSS
V
I
I
DSS
GSS
GS(th)
Drain-source breakdown voltage V
GS
= 0
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
R
DS(on)
Static drain-source on resistance
Test conditions
I
D
= 250 µA
V
DS
= 20 V
V
DS
= 20 V,Tc = 125 °C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 5 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A
Min.
Typ.
Max.
Unit
40
1 -
-
-
-
11.3
8.9
1
10
± 100 nA
V
µA
µA
2.5
18
12.5
V m Ω
Table 6.
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
R
G
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
Test conditions
V
DS
= 25 V, f=1 MHz,
V
GS
= 0 V
V
DD
= 20 V, I
D
= 40 A
V
GS
= 10 V
(see Figure 14
) f = 1 MHz open drain
Min
-
-
-
1190
200
110
22
5
4.3
3.1
Typ.
Max.
Unit
-
-
pF pF pF nC nC nC
Ω
Table 7.
Symbol t d(on) t r t d(off) t f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 20 V, I
D
= 20 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 15 )
Min.
Typ.
Max.
Unit
-
-
8.5
45
30
8
-
ns ns ns ns
4/15 Doc ID 17171 Rev 4
STD44N4LF6 Electrical characteristics
Table 8.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
I t
Q rr rr
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
I
SD
= 20 A, V
GS
= 0
I
SD
= 40 A, di/dt = 100 A/µs,
V
DD
= 32 V, T
J
= 150 °C
(see
Figure 17
)
Min.
Typ.
Max.
Unit
-
-
44
176
1.1
A
A
V
-
25
25
2 ns nC
A
Doc ID 17171 Rev 4 5/15
Electrical characteristics STD44N4LF6
Figure 2.
Safe operating area
I
D
(A)
Tj=175°C
Tc=25°C
S ingle p u l s e
100 a tion in thi s a re a
i s
D
S
(on) a x R
Oper
Limited
10
1
0.1
I
D
(A)
1 8 0
160
140
120
100
8 0
60
40
20
0
0 1
1
2
10
Figure 4.
Output characteristics
V
G S
=10V
3
AM0 8 90 3 v1
Figure 3.
Thermal impedance
100 µs
K
δ =0.5
0.2
10
-1
0.1
0.05
2 8 0DPB
0.02
1m s
10m s
0.01
10
-2
10
-5
S ingle p u l s e
10
-4
V
D S
(V) 10
3
10
-2
10
-1 t p
( s )
4V
AM0 8 904v1
Figure 5.
Transfer characteristics
I
D
(A)
1 8 0
V
D S
=4V
6V
5V
160
140
120
100
8 0
60
3 V
V
D S
(V)
40
20
0
0 2 4 6 8
AM0 8 905v1
V
G S
(V)
Figure 6.
Normalized B
VDSS
vs temperature Figure 7.
Static drain-source on resistance
AM0 8 906v1 AM0 8 907v1
BV
D SS
(norm)
I
D
=1mA
R
D S (on)
(m
Ω
)
V
G S
=10V
9.5
1.10
9.0
1.05
8 .5
1.00
8 .0
0.95
7.5
0.90
-75 -25 25 75 125 T
J
(°C)
7.0
0 10 20 3 0 40 I
D
(A)
6/15 Doc ID 17171 Rev 4
STD44N4LF6 Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
AM0 8 90 8 v1
V
G S
(V)
C
(pF)
12 V
DD
=20V
I
D
=40A
10
1000
8
AM0 8 909v1
Ci ss
6
100
Co ss
Cr ss
4
2
0
0 5 10 15 20 25 Q g
(nC)
10
0 10 20 3 0 V
D S
(V)
Figure 10.
Normalized gate threshold voltage vs temperature
AM0 8 910v1
V
G S (th)
(norm)
I
D
=250 µ A
1.2
Figure 11.
Normalized on resistance vs temperature
AM0 8 911v1
R
D S (on)
(norm)
V
G S
=10V
I
D
=20A
2.0
1.0
0.
8
1.5
0.6
0.4
0.2
0
-75 -25 25 75 125 T
J
(°C)
Figure 12.
Source-drain diode forward characteristics
V
S D
(V)
T
J
=-55°C
AM0 8 912v1
1.0
1.0
0.5
0
-75 -25 25 75 125 T
J
(°C)
0.
8
T
J
=25°C
0.6
0.4
T
J
=175°C
0.2
0
0 5 10 15 20 25 3 0 3 5 40 I
S D
(A)
Doc ID 17171 Rev 4 7/15
Test circuits
3 Test circuits
STD44N4LF6
Figure 13.
Switching times test circuit for resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
µ
F
3 .
3
µ
F
V
DD
V i
=20V=V
GMAX
2200
µ F
I
G
=CON S T
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 15.
Test circuit for inductive load switching and diode recovery times
Figure 16.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 µ H
3 .
3
µ F
1000
µ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
µ F
3 .
3
µ F
V
DD
P w
AM01470v1
Figure 17.
Unclamped inductive waveform
V
(BR)D SS
V
D
Figure 18.
Switching time waveform t on t off t r td on td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
8/15 Doc ID 17171 Rev 4
STD44N4LF6
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and products status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 17171 Rev 4 9/15
Package mechanical data
H
L
L1
L2
L4
D1
E
E1 e e1
R
V2 b4 c c2
D
A
A1
A2 b
Table 9.
Dim.
DPAK (TO-252) mechanical data
Min.
5.20
0.45
0.48
6.00
2.20
0.90
0.03
0.64
6.40
4.40
9.35
1
0.60
0° mm
Typ.
5.10
4.70
2.28
2.80
0.80
0.20
STD44N4LF6
4.60
10.10
1.50
1
8°
Max.
5.40
0.60
0.60
6.20
2.40
1.10
0.23
0.90
6.60
10/15 Doc ID 17171 Rev 4
STD44N4LF6
Figure 19.
DPAK (TO-252) drawing
Package mechanical data
006 8 772_H
Figure 20.
DPAK footprint
(a)
6.7
1.
8 3
1.6
6.7
1.6
2.
3
2.
3
AM0 88 50v1 a.
All dimension are in millimeters
Doc ID 17171 Rev 4 11/15
Packaging mechanical data
5 Packaging mechanical data
STD44N4LF6
Table 10.
DPAK (TO-252) tape and reel mechanical data
Tape mm
Dim.
Dim.
D
D1
E
F
K0
P0
P1
P2
A0
B0
B1
R
T
W
Min.
6.8
10.4
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
0.25
15.7
1.85
7.6
2.75
4.1
8.1
2.1
Max.
7
10.6
12.1
1.6
0.35
16.3
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
16.4
50
Base qty.
Bulk qty.
Reel mm
Max.
330
13.2
18.4
22.4
2500
2500
12/15 Doc ID 17171 Rev 4
STD44N4LF6
Figure 21.
Tape for DPAK (TO-252)
T
Top cover t a pe
10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm
P0 D P2
Packaging mechanical data
K0
F
E
W
B1
B0
For m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd B0
A0 P1
U s er direction of feed
D1
R
U s er direction of feed
Figure 22.
Reel for DPAK (TO-252)
REEL DIMEN S ION S
40mm min.
Acce ss hole
At s l ot loc a tion
B
D
C
A
Bending r a di us
AM0 88 52v1
T
N
F u ll r a di us
Doc ID 17171 Rev 4
T a pe s lot in core for t a pe s t a rt 25 mm min.
width
G me asu red a t h ub
AM0 88 51v2
13/15
Revision history STD44N4LF6
Table 11.
Document revision history
Date Revision
23-Feb-2010
03-Feb-2011
16-Sep-2011
25-Oct-2011
1
2
3
4
Changes
First release.
Document status promoted from preliminary data to datasheet.
Updated
Table 4: Package mechanical data
.
Minor text changes in cover page.
Updated
Table 7: Switching on/off (inductive load)
and Table 8:
Source drain diode
.
Updated
Table 4: Package mechanical data
.
14/15 Doc ID 17171 Rev 4
STD44N4LF6
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Doc ID 17171 Rev 4 15/15
